JPS6233416A - Device for manufacturing optical fiber single crystal - Google Patents

Abstract

PURPOSE:To easily enable controlling the starting position and the direction of solidification of a melted region without loss of energy by a method wherein the cross section of the irradiation part of an optical fiber flux is formed into the desired shape and, at the same time, the arrangement of each optical fiber on the incidence part of the optical fiber flux is differentiated from the arrangement of each optical fiber of said irradiation part. CONSTITUTION:A laser beam is divided into very small regions by each optical fiber 50, the beam is transmitted to an irradiation part 52, and the shape of cross section and the intensity distribution of the beam are adjusted into the optimum state for single crystallization by an optical fiber flux. The laser beam sent from the irradiation part 52 is condensed and made to irradiate on the surface of a sample 7 by a condensing lens 6, the optimum temperature distribution for single crystallization is formed on the sample 7, and a melted region 12 of the shape corresponding to the shape of cross-section of the irradiation shape is formed on a polysilicon layer 71. A stand 9 is moved in the direction shown by the arrow in the diagram using a shifting means, the laser beam sent from the condensing lens 6 is made to irradiate scanningly on the surface of the polysilicon layer 71. As a result, the melted region 12 is moved on the insulating film substrate 12 while an epitaxial growth is being generated on the rear edge of the region 12, and the polysilicon layer 71 is single-crystallized successively.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Application in M Business] The present invention relates to an optical fiber single crystallization device, and more particularly to a device for single crystallizing a non-single crystal semiconductor layer on an insulating film substrate or the like.

[Traditional technique! Ii] Conventional insulation +11! By irradiating the polysilicon layer on the i-plate with a laser beam and controlling the position and direction of solidification of the melted FF region of this polysilicon layer, there is a method to single-crystallize the polysilicon layer with high quality and over a large area. Some suggestions have been made. One method is to provide the sample to be single crystallized with a structure such as a heat sink or an anti-reflection film to create the moisture distribution necessary for single crystallization on the sample, thereby controlling single crystallization. be. Also, another method is
By changing the fundamental mode of the laser beam to another mode, using two laser beams, or inserting a mask with an aperture in the middle of the laser beam, the intensity distribution of the laser beam can be changed and the intensity distribution applied to the sample can be changed. In this method, the humidity distribution required for single crystallization is created, and thereby single crystallization is controlled.

FIG. 2 is a diagram showing a conventional single crystallization apparatus.

First, the configuration of this device will be explained. In the figure,
A convex lens 30.3 is placed in front of the laser device 1 which is a light source.
A beam expander 3° reflecting mirror 4 consisting of 1 is arranged in this order, and this reflecting mirror is equipped with a laser! ! li1
The laser beam 2 is provided at an angle with respect to the optical axis of the laser beam 2 emitted from the laser beam 2 . Further, a mask 8. having, for example, a 1-shaped N-shaped opening 80 at the lower part of the reflecting mirror 4. Condensing lens 6, sample 7. The tables 9 on which the samples are placed are arranged in this order.

Sample 7 consists of the $8 edge board 72 and this insulation I! ! It is composed of polysilicon 1171 formed on a J substrate.

11 is a region of polysilicon 1171 melted by the laser beam from the condenser lens 6; Further, the table 9 is moved in the direction of the arrow 1o by a moving means (not shown), thereby scanning the surface of the sample 7 with the laser beam from the condenser lens 6.

Next, the operation of this single crystallization apparatus will be explained.

Laser light 2 emitted from laser device 1 is incident on beam expander 3 to expand its beam diameter, and laser light from convex lens 31 is bent downward by reflecting mirror 4. The parallel laser beam with a Gaussian intensity distribution from the reflecting mirror 4 is incident on the mask 8, and the cross-sectional shape and intensity distribution of the laser beam are adjusted by the opening 80 to the cross-sectional shape and intensity distribution necessary for single crystallization. be done. The laser beam from the opening 80 is condensed and irradiated onto the surface of the sample 7 by the condensing lens 6, whereby the temperature distribution of the sample 7 necessary for single crystallization is achieved, and the polysilicon s71 is melted into a shape corresponding to the opening 80. Region 11 is formed. At this time, the table 9 is moved by the moving means in the direction of the arrow 10, and the laser beam from the condenser lens 6 is reversely distorted while irradiating the surface of the polysilicon 171. For this reason, melt j%! The region w111 moves on the insulating film substrate 72 while epitaxial growth occurs at its rear edge, and the polysilicon layer 71 is sequentially turned into a single crystal. In this way, the polysilicon 1 is
Single crystallization of li71 can be controlled.

[Problems to be Solved by the Invention] By the way, the conventional method of controlling the intensity distribution of laser light to create the temperature distribution necessary for single crystallization on a sample and forming a single crystal involves attaching a structure such as a heat sink to the sample. However, the method of changing the fundamental mode of the laser beam to another mode requires complicated equipment, and the method of using two laser beams requires the position of the laser spot. There was a problem that precision was required for control. In addition, in the method using the apparatus shown in Figure 2, there is energy loss in the laser beam due to the opening of the mask, and the obtained laser beam has an inappropriate intensity distribution in the cross-sectional shape, so that the desired intensity distribution is not perfect. There was a problem that it could not be obtained in a certain form.

This invention was made in order to solve the above-mentioned problems, and provides an optical fiber single crystallization device with a simple configuration in which the position and direction of solidification of the molten region can be easily controlled without energy loss. The purpose is to

[Means for Solving the Problems] The optical fiber single crystallization apparatus according to the present invention provides an optical fiber bundle consisting of a plurality of optical fibers between a light source and a sample including a non-single crystal layer. The cross-sectional shape of the irradiation part of the optical fiber bundle is set to a desired shape, and the arrangement of each optical fiber in the input part of the optical fiber bundle is made to be different from the arrangement of each optical fiber in the irradiation part, so that the light from the optical fiber bundle is The non-single crystal layer is melted by irradiation, the light from the optical fiber is scanned over the sample surface by a moving means, and the molten fIA region of the non-single crystal layer is moved within the sample by this scanning. It is.

[Operation] In the present invention, the cross-sectional shape of the laser beam irradiated onto the sample is changed by changing the cross-sectional shape of the irradiation part of the optical fiber bundle. Furthermore, by making the arrangement of the optical fibers in the input section of the optical fiber bundle variously different from the arrangement of the optical fibers in the irradiation section, the intensity distribution of the laser light irradiated onto the sample changes.

[Example] Embodiments of the present invention will be described below with reference to the drawings.

In the description of this embodiment, the description of parts that overlap with the description of the conventional technology will be omitted as appropriate.

FIG. 1 is a diagram showing an optical fiber biocrystallization apparatus according to an embodiment of the present invention. The construction of this embodiment is the same as that of FIG. 2 except for the following points.

t, an optical fiber bundle 5 consisting of a plurality of optical fibers 50 is provided between the reflection 1jt4 and the condenser lens 6. Light? The cross-sectional shape of the irradiation part 52 of the optical fiber bundle 5 is, for example, a half ring shape, and the entrance part 51 of the optical fiber bundle 5
The arrangement of the optical fibers 50 is different from the arrangement of the optical fibers 50 of the illumination fFJ section 52. The optical fiber bundle 5 can transmit the laser light that has entered the input section 51 to the irradiation section 52 without leaking it to the outside. In addition, by changing the cross-sectional shape of the irradiation part 52 of the optical fiber bundle 5, the cross-sectional shape of the laser beam focused and irradiated onto the surface of the sample 7 can be arbitrarily changed. Arrangement of fibers 50 and each optical fiber 5o of irradiation section 52
By varying the arrangement of the laser beams, the intensity distribution of the laser beam focused and irradiated onto the surface of the sample 7 can be arbitrarily changed.

Next, the operation of this optical fiber single crystallization apparatus will be explained. Parallel laser light with a Gaussian intensity distribution from the reflecting mirror 4 is incident on the input section 51 of the optical fiber bundle 5, and the laser light is divided into minute regions by each optical fiber 5° and transmitted to the irradiation section 52. be done. At this time, the cross-sectional shape and intensity distribution of the laser beam are adjusted by the optical fiber bundle 5 to the optimal cross-sectional shape and intensity distribution for single crystallization. Irradiation section 52
The laser beam is focused and irradiated onto the surface of the sample 7 by the condensing lens 6, creating an optimal temperature distribution for single crystallization on the sample 7, and forming a polysilicon layer 71 with a shape corresponding to the cross-sectional shape of the irradiated part 52. A molten region 12 is formed. At this time, the moving means moves the table 9 in the direction of the arrow 10, and the condenser lens 6
The laser beam from the polysilicon layer 71 is scanned while being irradiated with the surface. Therefore, the molten region 12 is insulated II! while epitaxial growth occurs at its trailing edge. Moving over the substrate 72, polysilicon 11171 is sequentially turned into a single crystal.

In this way, the position and direction of solidification of the molten Q region 1112 are determined using the optical fiber bundle 5, and the polysilicon
71 can be made into a single crystal using an insulating imm plate 72.

Further, in the present invention, a cross-sectional shape and intensity distribution optimal for single crystallization of laser light can be easily created without loss of energy with a simple device configuration.

In addition, in the above example, seedless 5ol (Silic
Although the case where a polysilicon layer with an on-Qn-1n5ulator structure is made into a single crystal is shown, this invention can also be applied to a polysilicon layer with a seeded Sol structure or a polysilicon layer formed on a substrate other than absolute BJI. In these cases, the same effect as in the above embodiment can be obtained.

Further, in the above embodiment, a case where the polysilicon layer is made into a single crystal is shown, but the present invention can also be applied to other polycrystalline semiconductor layers, and the same effects as in the above embodiment can be obtained in this case as well.

[Effects of the Invention] As described above, according to the present invention, an optical fiber bundle consisting of a plurality of optical fibers is provided between a light source and a sample including a non-single crystal layer, and the cross-sectional shape of the irradiated part of this optical fiber bundle is At the same time, the arrangement of each optical fiber in the input part of the optical fiber bundle is made different from the arrangement of each optical fiber in the irradiation part, and the light from the optical fiber bundle is irradiated onto the sample to form a non-single crystal. The layer is melted and the surface of the sample is scanned with light from the optical fiber bundle using a moving means, and the melted region of the non-single crystal layer is moved within the sample by this scanning, making it ideal for single crystallization. The cross-sectional shape and intensity distribution of laser light can be obtained easily and with a simple configuration without energy loss. Therefore, a temperature distribution optimal for single crystallization is created on the sample, and the non-single crystal layer can be turned into a single crystal by controlling the position and direction of solidification in the molten tR region.

[Brief explanation of the drawing]

FIG. 1 is a diagram showing an optical fiber single crystallization apparatus which is an embodiment of the present invention. FIG. 2 is a diagram showing a conventional single crystallization apparatus. In the figure, 1 is a laser device, 3 is a beam expander, 4 is a reflecting mirror, 5 is an optical fiber bundle, 50 is an optical fiber,
6 is a condensing lens, 7 is a sample, 71 is a polysilicon layer, 7
2 is insulation II! The plate, 9 is a stand, and 12 is a melting area. According to I4, the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa ('l
-rri8■sa;gΦProcedural amendment (self-motivated) Showa 62., January 1”2/A\,... Commissioner of the Japan Patent Office, Sho 7
゜1.Indication of the incident Patent Application No. 174602/1986 2
, Name of invention Optical fiber single crystallization device: 3, ? +li correct person 2',!・”. 1. MeR 5. Subject of amendment Column 6: Detailed explanation of the invention of am. Contents of amendment (1) [Beam expander 31 reflection Mi4 "in this order" is corrected to "beam expander 3 and reflection tlt4". (2) In Mei 101, page 3, line 13, ``to be tilted toward'' is corrected to ``to be able to change in any direction.'' (3) "Adjustment" on page 4, line 12 of the specification is corrected to "shaping." (4) From page 9, line 20 to page 5, line 1 of the specification [
"While epitaxial growth occurs" is corrected to "because recrystallization does not progress." (5) 1 entrance part J on page 6, line 9 of the specification is referred to as "irradiation part J"
Correct. (6) "Irradiation section" on page 6, line 10 of the specification is corrected to "incidence section." (7) Details! ``Correct the following point to J'' on page 7, line 10. (8) ``In other words, reflector 4'' on page 7, line 11 of the specification.
"and" is corrected to "In other words, the reflector 4 is used instead of the mask 8." (9) In the specification, page 9, lines 2 and 3, J is changed to ``while recrystallization progresses'' because ``epitaxial growth does not occur''.
Correct. (10) "Incidence section" on page 10, line 9 of the specification is corrected to "irradiation section." (11) "Irradiation section" in lines 9 and 10 of page 10 of the specification is corrected to "incidence section". that's all

Claims (2)

[Claims] (1) An apparatus that scans a sample while irradiating it with light to single-crystallize a non-single-crystal layer contained in the sample, comprising: a light source; a table on which the sample is placed; a device placed on the light source and the table; an optical fiber bundle consisting of a plurality of optical fibers provided between the samples, into which light from the light source enters and which irradiates the sample with the light to melt a non-single crystal layer of the sample; The cross-sectional shape of the irradiation part of the optical fiber bundle is set to a desired shape, and the arrangement of each optical fiber in the input part of the optical fiber bundle is different from the arrangement of each optical fiber in the irradiation part of the optical fiber bundle, an optical fiber single crystallization apparatus, comprising a moving means for moving light from the optical fiber bundle relative to the sample so that the surface of the sample is scanned with the light from the fiber bundle. (2) The optical fiber single crystallization apparatus according to claim 1, wherein the sample is a polysilicon layer having a seeded or unseeded SOI structure.