JPS6251499B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device in which the connection between external electrodes drawn out as external terminals and internal electrodes is improved.

In semiconductor devices such as diodes, thyristors, and triacs, internal electrodes of each pole are extended from a semiconductor pellet mounted on an insulating substrate, and external electrodes are connected to these internal electrodes and extended out.

The case of a TRIACK as a semiconductor device will be explained.

A conventional semiconductor device was constructed as shown in a perspective view in FIG. The figure shows the case of triax,
Reference numeral 1 denotes an insulating substrate made of alumina or the like, which is bonded to a heat sink 2 made of iron or copper with solder or the like. A mounting hole 2a is formed in the heat sink 2. A metallized layer 3 is provided on the upper surface of the insulating substrate 1 at a location corresponding to each electrode. 4 is the _T2 external electrode, both soldered on the metallized layer 3
It is soldered to the _T2 internal electrode 5. 6 is T ₁
The external electrodes 7 are G external electrodes, which are each soldered onto each metallized layer 3 and drawn out.
Each of these external electrodes 4, 6, and 7 is made of a conductive metal such as brass or copper, and forms an external terminal. 8 is
T ₂ Semiconductor pellet soldered onto internal electrode 5; 9 made of copper material, etc.; semiconductor pellet 8;
A _T1 internal electrode is connected to the _T1 external electrode 6 by soldering, and 10 is a G internal electrode made of copper or the like and connected to the semiconductor pellet 8 and the G external electrode 7 by soldering.

In assembling the parts of the above-mentioned conventional apparatus by soldering, a piece of brazing material is sandwiched between each part, and the parts are brazed and joined all at once in a hydrogen atmosphere.

In the above conventional device, between the T ₁ external electrode 6 and the T ₁ internal electrode 9 and between the G external electrode 7 and the G internal electrode 10
Pieces of brazing filler metal are sandwiched between the two and soldered together, which complicates the work process, hinders automation, and greatly reduces work efficiency, making mass production difficult. In addition, there are many pieces of brazing filler metal to be inserted, which is time consuming and expensive.

This invention connects internal electrodes and external electrodes,
A piece of brazing material is placed on the metallized layer of the external electrode on the insulating substrate, and the external and internal electrodes are placed side by side on this piece of brazing material, and the two are connected in between by welding them with the brazing material. The object of the present invention is to provide a semiconductor device that is connected by a brazing filler metal, which simplifies the working process, facilitates automation, improves working efficiency, allows mass production, and reduces the number of pieces of brazing filler metal.

FIG. 2 is a perspective view of a triax showing a semiconductor device according to an embodiment of the present invention.
8 and 2a are the same as those of the conventional device. A _T1 external electrode 6 and a G external electrode 7 are placed on the top surface of the insulating substrate 1.
A piece of brazing material 21 is placed on each metallized layer 3 applied to the location. The T ₁ external electrode 6 and the T ₁ internal electrode 22 are placed side by side on one piece of brazing material 21 with a small gap. The other side of this _T1 internal electrode is placed on the semiconductor pellet 8. On the other brazing material piece 21, the G external electrode 7 and the G internal electrode 23 are placed side by side with a relatively small gap. Pieces of brazing filler metal are sandwiched between each of the parts other than the brazing filler metal pieces 21, as in the conventional apparatus described above, and the parts are brazed and joined together in a hydrogen atmosphere.

In this way, the T ₁ external electrode 6 and the T ₁ internal electrode 22 are connected via the brazing material between them, and the G external electrode 7 and the G internal electrode 23 are connected via the brazing material between them. In this case, special attention must be paid to the distance t between the T ₁ external electrode 6 and the T ₁ internal electrode 22 through which the main current flows, and t must be kept at 0.5 mm or less. If the interval t is increased, the voltage drop will increase in the large current region, making it impossible to flow a large current.

In this way, the external electrode and internal electrode placed thereon are brazed and connected by the brazing material piece 21 placed on the metallized layer 3 on the insulating substrate 1,
The work process is simplified and automation becomes easier.

In the above embodiments, the semiconductor device is a TRIAT, but a diode,
It can also be applied to thyristors and the like.

As described above, according to the present invention, the external electrodes and internal electrodes are arranged on the brazing material piece on the metallized layer on the insulating substrate and connected by brazing, which simplifies the work process and facilitates automation. , work efficiency is improved, mass production is possible, the number of pieces of filler metal is reduced,
Prices will be reduced.

[Brief explanation of the drawing]

FIG. 1 is a perspective view of a triac showing a conventional semiconductor device, and FIG. 2 is a perspective view of a triac showing a semiconductor device according to an embodiment of the present invention. 1... Insulating substrate, 3... Metallized layer, 4...
_T2 external electrode, 5... _T2 internal electrode, 6... _T1 external electrode, 7...G external electrode, 8... semiconductor pellet, 21... brazing metal piece, 22... _T1 internal electrode,
23...G internal electrode. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

[Claims] 1 Pieces of brazing filler metal are placed on the metallizing layer at multiple locations on an insulating substrate, external electrodes and internal electrodes of the same polarity are placed side by side on these pieces of brazing filler metal, and each of the pieces of brazing filler metal A semiconductor device characterized in that the external electrodes and internal electrodes of the same polarity are joined by heating and melting, and the two are connected by a brazing material.