JPS6252954U - - Google Patents
Info
- Publication number
- JPS6252954U JPS6252954U JP14491985U JP14491985U JPS6252954U JP S6252954 U JPS6252954 U JP S6252954U JP 14491985 U JP14491985 U JP 14491985U JP 14491985 U JP14491985 U JP 14491985U JP S6252954 U JPS6252954 U JP S6252954U
- Authority
- JP
- Japan
- Prior art keywords
- color sensor
- photodiode
- semiconductor color
- silicon layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 claims description 2
- 230000003595 spectral effect Effects 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 7
- 239000010410 layer Substances 0.000 description 5
- 101150079996 Isc1 gene Proteins 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Spectrometry And Color Measurement (AREA)
Description
第１図は本考案の実施例に係る半導体カラーセ
ンサの断面構造図、第２図は第１図に示した半導
体カラーセンサのパターン図、第３図は本実施例
に係る半導体カラーセンサの等価回路図、第４図
は本実施例に係る半導体カラーセンサのフオトダ
イオードＰＤ１及びＰＤ２の各分光感度特性図、
第５図は本実施例に係る半導体カラーセンサのフ
オトダイオードＰＤ１の光電流Ｉｓｃ１とフオト
ダイオードＰＤ２の光電流Ｉｓｃ２の出力比Ｉｓ
ｃ１／Ｉｓｃ２と、入力光波長λとの開係図、第
６図は従来の半導体カラーセンサの断面構成図で
ある。
１０……基板、１１……Ｐ層、１２……Ｎ＋層
、１３……層間絶縁層、１４，１６……電極、１
７……Ｎ型アモルフアスシリコン層、１８……Ｐ
型アモルフアスシリコン層、ＰＤ１，ＰＤ２……
フオトダイオード。
FIG. 1 is a cross-sectional structural diagram of a semiconductor color sensor according to an embodiment of the present invention, FIG. 2 is a pattern diagram of the semiconductor color sensor shown in FIG. 1, and FIG. 3 is an equivalent diagram of the semiconductor color sensor according to this embodiment. The circuit diagram and FIG. 4 are respective spectral sensitivity characteristic diagrams of photodiodes PD1 and PD2 of the semiconductor color sensor according to this embodiment,
FIG. 5 shows the output ratio Is of the photocurrent Isc1 of the photodiode PD1 and the photocurrent Isc2 of the photodiode PD2 of the semiconductor color sensor according to this embodiment.
FIG. 6 is a diagram showing the relationship between c1/Isc2 and input light wavelength λ, and is a cross-sectional configuration diagram of a conventional semiconductor color sensor. 10... Substrate, 11... P layer, 12... N + layer, 13... Interlayer insulating layer, 14, 16... Electrode, 1
7...N-type amorphous silicon layer, 18...P
Type amorphous silicon layer, PD1, PD2...
Photodiode.
Claims (1)
を積層することにより形成される半導体カラーセ
ンサにおいて、 一方のフオトダイオードをアモルフアスシリコ
ン層に形成し、他方のフオトダイオードを単結晶
シリコン層に形成したことを特徴とする半導体カ
ラーセンサ。[Claims for Utility Model Registration] In a semiconductor color sensor formed by stacking two photodiodes with different spectral sensitivity characteristics, one photodiode is formed in an amorphous silicon layer, and the other photodiode is formed in a single crystal layer. A semiconductor color sensor characterized by being formed on a silicon layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14491985U JPS6252954U (en) | 1985-09-20 | 1985-09-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14491985U JPS6252954U (en) | 1985-09-20 | 1985-09-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6252954U true JPS6252954U (en) | 1987-04-02 |
Family
ID=31055973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14491985U Pending JPS6252954U (en) | 1985-09-20 | 1985-09-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6252954U (en) |
-
1985
- 1985-09-20 JP JP14491985U patent/JPS6252954U/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4972252A (en) | Photosensor with a capacitor connected in parallel so as to increase the dynamic range and to improve the holding characteristics of the photosensor | |
| JPS6252954U (en) | ||
| JPS561318A (en) | Photoelectric conversion device | |
| JPS63134557U (en) | ||
| JPS6348234B2 (en) | ||
| JPS5863180A (en) | Thin film solar battery | |
| JPS6269568A (en) | Semiconductor color sensor | |
| JPS6177375A (en) | Color sensor | |
| JPH0394478A (en) | Semiconductor device | |
| JPS6222273B2 (en) | ||
| JPS63127159U (en) | ||
| JPS63136360U (en) | ||
| JPH09186355A (en) | Photodetector | |
| JPH0231153U (en) | ||
| JPS6157545U (en) | ||
| JPH0448646U (en) | ||
| JPS63137959U (en) | ||
| JPS628648U (en) | ||
| JPS6389265U (en) | ||
| JPS63153557U (en) | ||
| JPS62130570A (en) | Photodetector | |
| JPH0381647U (en) | ||
| JPS6424865U (en) | ||
| JPS6244866B2 (en) | ||
| JPH0396054U (en) |