JPS628648U - - Google Patents
Info
- Publication number
- JPS628648U JPS628648U JP9927085U JP9927085U JPS628648U JP S628648 U JPS628648 U JP S628648U JP 9927085 U JP9927085 U JP 9927085U JP 9927085 U JP9927085 U JP 9927085U JP S628648 U JPS628648 U JP S628648U
- Authority
- JP
- Japan
- Prior art keywords
- photodiode
- optical sensor
- semiconductor optical
- another
- photodiode section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 4
- 108091008695 photoreceptors Proteins 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 claims description 3
- 230000003595 spectral effect Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Description
第１図は本考案にかかる半導体光センサーの実
施例を示す平面図、第２図は同ＡＡ線切断状態の
模式図、第３図は同配線図、第４図は他の実施例
を示す平面図、第５図は分光感度特性を示すグラ
フである。
１…基板、２…受光体、３…受光層。
Fig. 1 is a plan view showing an embodiment of the semiconductor optical sensor according to the present invention, Fig. 2 is a schematic diagram of the AA line cut state, Fig. 3 is the wiring diagram, and Fig. 4 shows another embodiment. The plan view and FIG. 5 are graphs showing spectral sensitivity characteristics. 1... Substrate, 2... Photoreceptor, 3... Light-receiving layer.
Claims (1)
リコンからなる受光体をｐｎ接合してなる一の分
光感度を有するフオトダイオード部が形成され、
上記基板上の非受光体部分に、ｐｉｎ接合のアモ
ルフアスシリコンからなる受光層を被着して他の
分光感度を有するフオトダイオード部が形成され
たことを特徴とする半導体光センサー。 一のフオトダイオード部と他のフオトダイオ
ード部とが光軸に対し同心形に配設された実用新
案登録請求の範囲第１項記載の半導体光センサー
。 一のフオトダイオード部と他のフオトダイオ
ード部とが光軸に対し対向形に配設された実用新
案登録請求の範囲第１項記載の半導体光センサー
。[Claims for Utility Model Registration] A photodiode portion having a spectral sensitivity is formed by pn-junctioning a photoreceptor made of single crystal silicon to the surface of a substrate made of single crystal silicon,
A semiconductor optical sensor characterized in that a photodiode portion having another spectral sensitivity is formed by depositing a pin-junction light-receiving layer made of amorphous silicon on the non-photoreceptor portion of the substrate. A semiconductor optical sensor according to claim 1, wherein one photodiode section and another photodiode section are arranged concentrically with respect to an optical axis. A semiconductor optical sensor according to claim 1, wherein one photodiode section and another photodiode section are arranged opposite to each other with respect to an optical axis.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9927085U JPS628648U (en) | 1985-06-29 | 1985-06-29 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9927085U JPS628648U (en) | 1985-06-29 | 1985-06-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS628648U true JPS628648U (en) | 1987-01-19 |
Family
ID=30967993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9927085U Pending JPS628648U (en) | 1985-06-29 | 1985-06-29 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS628648U (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55115375A (en) * | 1979-02-26 | 1980-09-05 | Matsushita Electric Ind Co Ltd | Light detector element |
| JPS58105569A (en) * | 1981-12-16 | 1983-06-23 | Matsushita Electric Ind Co Ltd | Semiconductor photo detector |
| JPS59117161A (en) * | 1982-12-23 | 1984-07-06 | Sanyo Electric Co Ltd | Optical semiconductor device |
-
1985
- 1985-06-29 JP JP9927085U patent/JPS628648U/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55115375A (en) * | 1979-02-26 | 1980-09-05 | Matsushita Electric Ind Co Ltd | Light detector element |
| JPS58105569A (en) * | 1981-12-16 | 1983-06-23 | Matsushita Electric Ind Co Ltd | Semiconductor photo detector |
| JPS59117161A (en) * | 1982-12-23 | 1984-07-06 | Sanyo Electric Co Ltd | Optical semiconductor device |