JPS6258655B2 - - Google Patents

Info

Publication number
JPS6258655B2
JPS6258655B2 JP57160973A JP16097382A JPS6258655B2 JP S6258655 B2 JPS6258655 B2 JP S6258655B2 JP 57160973 A JP57160973 A JP 57160973A JP 16097382 A JP16097382 A JP 16097382A JP S6258655 B2 JPS6258655 B2 JP S6258655B2
Authority
JP
Japan
Prior art keywords
resin
mold
thickness
pusher
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57160973A
Other languages
Japanese (ja)
Other versions
JPS5950534A (en
Inventor
Shozo Nakamura
Susumu Tsujiku
Masao Goto
Ataru Yokono
Hajime Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57160973A priority Critical patent/JPS5950534A/en
Publication of JPS5950534A publication Critical patent/JPS5950534A/en
Publication of JPS6258655B2 publication Critical patent/JPS6258655B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/016—Manufacture or treatment using moulds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/0055—Moulds or cores; Details thereof or accessories therefor with incorporated overflow cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/32—Component parts, details or accessories; Auxiliary operations
    • B29C43/36—Moulds for making articles of definite length, i.e. discrete articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
    • B29L2031/00—Other particular articles
    • B29L2031/34—Electrical apparatus, e.g. sparking plugs or parts thereof
    • B29L2031/3406—Components, e.g. resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

PURPOSE:To remove any excessive hard resin reducing the thickness of sealed resin by a method wherein the resin dripped in a mold with excellent mold release characteristics encircling the sealed part is pressurized for thermosetting using a jig with small surface of the dimension a little smaller than that of the inner wall of the mold down to specified thickness. CONSTITUTION:With a semiconductor element 2 fixed to a wiring substrate 1, the wiring parts of the substrate 1 and the terminal parts of the element 2 are connected with each other by means of bonding wires 3. A plate 7 with a square pierced hole coated with parting agent 10 is mounted on the specified position of the substrate 1 to be fixed thereto using a fixing jig 8 after setting up the element 2 on a base 6. At this time, the base 6 and the plate 7 are to be heated. Next a liquid thermo-setting resin 5 is dripped and a pusher 9 coated with the parting agent 10 is loaded to be set up providing the resin 5 with specified thickness. A bump with an angle theta as well as the clearances (a), (b) from the plate 7 are provided on the edge of the pusher 9. Finally the resin 5 may be hardened removing the pusher 9.

Description

【発明の詳細な説明】[Detailed description of the invention]

本発明は半導体素子の樹脂封止方法に係り、特
に超薄型でかつ樹脂厚さのバラツキを皆無に近い
半導体素子の樹脂封止方法に関するものである。 電卓、電子時計等の薄型化、小型化が進み、こ
れに伴つて樹脂封止半導体の樹脂厚さを薄くする
要求が高まつている。この封止樹脂の厚さは半導
体素子の樹脂封止方法に大きく依存する。 現在、半導体素子は第１図ａに示すように配線
基板１（配線部図示せず）に半導体素子２を接着
剤等で固定し、両者をボンデイングワイヤ３で接
続してから、例えばシリコーングリースでダム４
を形成し、第１図ｂに示すように液状熱硬化性樹
脂５を滴下して半導体素子２、ボンデイングワイ
ヤ３を被覆し、これを真空脱泡してから加熱硬化
し、更にダム４を除去して第１図ｃの樹脂封止半
導体素子としている。 この方法では熱硬化性樹脂滴下後の樹脂厚さt1
が硬化後にはt2に減少する。 しかし、上記方法は硬化後の封止樹脂厚さt2は
樹脂滴下量に大きく左右されるため厚さを精度よ
く制御できず、ボンデイングワイヤ３が露出した
り、規格以上の厚さになり製品の品質歩留りを大
きく低下させている。 本発明の目的は、上記した従来技術の欠点をな
くし封止樹脂厚さを薄くし、かつその厚さのばら
つきが少ない半導体の樹脂封止方法を提供するこ
とにある。 すなわち、上記発明は離型性良好な型で封止部
分を囲み、この中に樹脂を滴下してから型内壁寸
法より若干小さな寸法の表面が平滑な治具で所定
厚さに加圧して加熱硬化する点に特徴がある。 次に上記発明に至つた経過を説明する。まず、
厚さを均一にするため樹脂滴下量の制御に重点を
おき、樹脂の粘度、温度と滴下量との関係を検討
したが目的を達し得なかつた。 そこで、封止樹脂厚さを決めるため装置につい
て検討し上記の本発明の方法を見出した。 以下本発明を実施例により詳述する。第２図に
示すように、配線基板１（配線部図示せず）上に
半導体素子２（例えば4.5mm×4.5mm×0.2mmｔ）
を、例えば真空吸引などで固定し配線基板の配線
部と素子の端子部（図示せず）とをボンデイング
ワイヤ３（例えば直径25μｍ）で接続した。これ
をベース６にセツトし、テフロンなどの離型剤１
０を厚さ30〜40μｍコートした四角の貫通孔（円
形の貫通孔でも良い）を有する板７を配線基板１
の所定位置に設置した。その後、その板７を固定
治具８で固定した。この際、ベース６と上記の板
７は予め百数十度に加熱した。ついで液状熱硬化
性樹脂５（例えばフイラ含有のエポキシ樹脂）を
40〜50mg滴下した。その後、テフロンなどの離型
剤１０を厚さ30〜40μｍに塗布したプツシヤ９を
装填し所定の厚さになるようにセツトした。プツ
シヤ９の先端には角度θの突起部が設けられてお
り、上記の板７とのクリアランスａ，ｂが設けら
れている。ａ，ｂ，θを表のように変えた。これ
らの寸法は、位置決めピンにて±0.005mmの精度
で設定された。ついで、この状態で本装置を百数
十度に数分間加熱し、液状熱硬化性樹脂５を硬化
させた。硬化後、プツシヤ９を取りはずした。こ
の時、余分な封止樹脂１２は折れて除去された。
ついで固定治具８、前記の板７を解体する。これ
らの一連の工程を第３図に示した。第４図はこの
ようにして製作した樹脂封止半導体素子であり、
封止樹脂の厚さt2は0.485〜0.510mmであつた。 The present invention relates to a method for resin-sealing a semiconductor element, and more particularly to a method for resin-sealing a semiconductor element that is ultra-thin and has virtually no variation in resin thickness. 2. Description of the Related Art Calculators, electronic watches, and the like are becoming thinner and smaller, and as a result, there is an increasing demand for reducing the thickness of resin-sealed semiconductors. The thickness of this sealing resin largely depends on the resin sealing method of the semiconductor element. Currently, semiconductor devices are manufactured by fixing a semiconductor device 2 to a wiring board 1 (wiring part not shown) with an adhesive or the like, as shown in FIG. dam 4
As shown in FIG. 1b, a liquid thermosetting resin 5 is dropped to cover the semiconductor element 2 and the bonding wire 3, which is degassed under vacuum and cured by heating, and then the dam 4 is removed. As a result, the resin-sealed semiconductor element shown in FIG. 1c is obtained. In this method, the resin thickness t 1 after dropping thermosetting resin
decreases to t 2 after curing. However, with the above method, the thickness of the sealing resin after curing t 2 is greatly affected by the amount of resin dripped, so the thickness cannot be controlled accurately, and the bonding wire 3 may be exposed or the thickness may exceed the standard, resulting in the product. The quality yield is greatly reduced. SUMMARY OF THE INVENTION An object of the present invention is to eliminate the drawbacks of the above-mentioned conventional techniques, reduce the thickness of the sealing resin, and provide a method for resin-sealing a semiconductor with less variation in the thickness. That is, the above invention surrounds the sealing part with a mold that has good mold releasability, drops resin into the mold, and then pressurizes and heats it to a predetermined thickness using a jig with a smooth surface that is slightly smaller than the inner wall of the mold. It is characterized by hardening. Next, the progress that led to the above invention will be explained. first,
In order to make the thickness uniform, we focused on controlling the amount of resin dripped, and investigated the relationship between resin viscosity, temperature, and the amount of resin dripped, but we were unable to achieve our goal. Therefore, in order to determine the thickness of the sealing resin, an apparatus was studied and the above-mentioned method of the present invention was discovered. The present invention will be explained in detail below with reference to Examples. As shown in FIG. 2, a semiconductor element 2 (for example, 4.5 mm x 4.5 mm x 0.2 mm) is placed on a wiring board 1 (wiring part not shown).
were fixed by, for example, vacuum suction, and the wiring part of the wiring board and the terminal part (not shown) of the element were connected with a bonding wire 3 (eg, diameter 25 μm). Set this as base 6, and use a mold release agent such as Teflon 1.
A board 7 having a square through hole (a circular through hole may also be used) coated with 0 to a thickness of 30 to 40 μm is attached to the wiring board 1.
was installed at the specified location. Thereafter, the plate 7 was fixed with a fixing jig 8. At this time, the base 6 and the plate 7 were previously heated to over 100 degrees. Then, a liquid thermosetting resin 5 (for example, a filler-containing epoxy resin) is applied.
40 to 50 mg was added dropwise. Thereafter, a pusher 9 coated with a mold release agent 10 such as Teflon to a thickness of 30 to 40 μm was loaded and set to a predetermined thickness. A protrusion having an angle θ is provided at the tip of the pusher 9, and clearances a and b between the pusher 9 and the plate 7 are provided. Change a, b, and θ as shown in the table. These dimensions were set with an accuracy of ±0.005 mm using positioning pins. Next, in this state, the apparatus was heated to over 100 degrees Celsius for several minutes to harden the liquid thermosetting resin 5. After curing, the pusher 9 was removed. At this time, the excess sealing resin 12 was broken and removed.
Next, the fixing jig 8 and the plate 7 are disassembled. A series of these steps is shown in FIG. Figure 4 shows the resin-sealed semiconductor device manufactured in this way.
The thickness t2 of the sealing resin was 0.485 to 0.510 mm.

【表】 この結果、厚さのばらつき、未充填発生率は表
に示すように良好であり、作業時間も表に示すよ
うに短縮された。 なお、前記の板７の欠損部１１は配線基板１に
密着するように設けたものであるが、欠損部が無
くてもシリコーングリースなどを塗布すれば密着
する。[Table] As a result, the thickness variation and unfilling rate were good as shown in the table, and the working time was shortened as shown in the table. Note that the cutout 11 of the board 7 is provided so as to be in close contact with the wiring board 1, but even if there is no cutout, it can be stuck tightly by applying silicone grease or the like.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来の樹脂封止半導体素子の一例を示
す断面図、第２図は本発明の製造方法を示す断面
図、第３図は本発明の工程図、第４図は本発明の
方法で製造した樹脂封止半導体素子の断面図であ
る。 １……配線基板、２……半導体素子、３……ボ
ンデイングワイヤ、４……ダム、５……液状熱硬
化性樹脂、６……ベース、７……板、８……固定
治具、９……プツシヤ、１０……離型剤、１１…
…欠損部、１２……余分な封止樹脂。 Fig. 1 is a cross-sectional view showing an example of a conventional resin-sealed semiconductor element, Fig. 2 is a cross-sectional view showing the manufacturing method of the present invention, Fig. 3 is a process diagram of the present invention, and Fig. 4 is a method of the present invention. FIG. 2 is a cross-sectional view of a resin-sealed semiconductor element manufactured in . DESCRIPTION OF SYMBOLS 1... Wiring board, 2... Semiconductor element, 3... Bonding wire, 4... Dam, 5... Liquid thermosetting resin, 6... Base, 7... Board, 8... Fixing jig, 9 ... Pushya, 10 ... Mold release agent, 11 ...
...Defected part, 12...Excess sealing resin.

Claims (1)

【特許請求の範囲】[Claims] １ 配線基板上にボンデイングワイヤで接続した
半導体素子の樹脂封止による製造方法において、
離型性良好な型で封止部分を囲み、この中に樹脂
を滴下してから型内壁寸法より若干小さな寸法の
表面平滑な治具で所定厚さに加圧して加熱硬化
し、余分の硬化樹脂を除去することを特徴とする
半導体の樹脂封止方法。1. In a manufacturing method by resin sealing of a semiconductor element connected with a bonding wire on a wiring board,
The sealing part is surrounded by a mold with good mold releasability, and the resin is dripped into the mold, and then the resin is heated and cured by applying pressure to a specified thickness using a jig with a smooth surface that is slightly smaller than the inner wall of the mold, and the excess hardening is removed. A semiconductor resin encapsulation method characterized by removing resin.
JP57160973A 1982-09-17 1982-09-17 Resin sealing process of semiconductor Granted JPS5950534A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57160973A JPS5950534A (en) 1982-09-17 1982-09-17 Resin sealing process of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57160973A JPS5950534A (en) 1982-09-17 1982-09-17 Resin sealing process of semiconductor

Publications (2)

Publication Number Publication Date
JPS5950534A JPS5950534A (en) 1984-03-23
JPS6258655B2 true JPS6258655B2 (en) 1987-12-07

Family

ID=15726152

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57160973A Granted JPS5950534A (en) 1982-09-17 1982-09-17 Resin sealing process of semiconductor

Country Status (1)

Country Link
JP (1) JPS5950534A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW325744U (en) * 1993-07-21 1998-01-21 Ciba Geigy Ag Two-sided contact lens mold
JP5235312B2 (en) 2007-02-22 2013-07-10 サンデン株式会社 Manufacturing method of inverter-integrated electric compressor
JP5247045B2 (en) * 2007-02-22 2013-07-24 サンデン株式会社 Manufacturing method of inverter-integrated electric compressor
JP2008202566A (en) * 2007-02-22 2008-09-04 Sanden Corp Electric compressor with built-in inverter
JP6398399B2 (en) * 2013-09-06 2018-10-03 富士電機株式会社 Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
JPS5950534A (en) 1984-03-23

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