JPS6259475B2 - - Google Patents
Info
- Publication number
- JPS6259475B2 JPS6259475B2 JP56075565A JP7556581A JPS6259475B2 JP S6259475 B2 JPS6259475 B2 JP S6259475B2 JP 56075565 A JP56075565 A JP 56075565A JP 7556581 A JP7556581 A JP 7556581A JP S6259475 B2 JPS6259475 B2 JP S6259475B2
- Authority
- JP
- Japan
- Prior art keywords
- compound semiconductor
- inp
- ingaasp
- layer
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
Landscapes
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56075565A JPS57190370A (en) | 1981-05-18 | 1981-05-18 | Semiconductor light receiving element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56075565A JPS57190370A (en) | 1981-05-18 | 1981-05-18 | Semiconductor light receiving element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57190370A JPS57190370A (en) | 1982-11-22 |
| JPS6259475B2 true JPS6259475B2 (de) | 1987-12-11 |
Family
ID=13579825
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56075565A Granted JPS57190370A (en) | 1981-05-18 | 1981-05-18 | Semiconductor light receiving element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57190370A (de) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5572084A (en) * | 1978-11-27 | 1980-05-30 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor photo-detector |
| JPS5646570A (en) * | 1979-09-26 | 1981-04-27 | Kokusai Denshin Denwa Co Ltd <Kdd> | Avalanche photodiode |
-
1981
- 1981-05-18 JP JP56075565A patent/JPS57190370A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57190370A (en) | 1982-11-22 |
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