JPS57190370A - Semiconductor light receiving element - Google Patents

Semiconductor light receiving element

Info

Publication number
JPS57190370A
JPS57190370A JP56075565A JP7556581A JPS57190370A JP S57190370 A JPS57190370 A JP S57190370A JP 56075565 A JP56075565 A JP 56075565A JP 7556581 A JP7556581 A JP 7556581A JP S57190370 A JPS57190370 A JP S57190370A
Authority
JP
Japan
Prior art keywords
layer
type
concentration
energy gap
liquidus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56075565A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6259475B2 (de
Inventor
Tatsuaki Shirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56075565A priority Critical patent/JPS57190370A/ja
Publication of JPS57190370A publication Critical patent/JPS57190370A/ja
Publication of JPS6259475B2 publication Critical patent/JPS6259475B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction

Landscapes

  • Light Receiving Elements (AREA)
JP56075565A 1981-05-18 1981-05-18 Semiconductor light receiving element Granted JPS57190370A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56075565A JPS57190370A (en) 1981-05-18 1981-05-18 Semiconductor light receiving element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56075565A JPS57190370A (en) 1981-05-18 1981-05-18 Semiconductor light receiving element

Publications (2)

Publication Number Publication Date
JPS57190370A true JPS57190370A (en) 1982-11-22
JPS6259475B2 JPS6259475B2 (de) 1987-12-11

Family

ID=13579825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56075565A Granted JPS57190370A (en) 1981-05-18 1981-05-18 Semiconductor light receiving element

Country Status (1)

Country Link
JP (1) JPS57190370A (de)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5572084A (en) * 1978-11-27 1980-05-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor photo-detector
JPS5646570A (en) * 1979-09-26 1981-04-27 Kokusai Denshin Denwa Co Ltd <Kdd> Avalanche photodiode

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5572084A (en) * 1978-11-27 1980-05-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor photo-detector
JPS5646570A (en) * 1979-09-26 1981-04-27 Kokusai Denshin Denwa Co Ltd <Kdd> Avalanche photodiode

Also Published As

Publication number Publication date
JPS6259475B2 (de) 1987-12-11

Similar Documents

Publication Publication Date Title
DE3580891D1 (de) Halbleiteranordnung mit mehreren uebergaengen.
JPS5515035A (en) Photo detector
FR2549642B1 (fr) Cellule solaire
JPS5513907A (en) Avalnche photo diode with semiconductor hetero construction
JPS5312288A (en) Light emitting semiconductor device
JPS5534463A (en) Avalanche photodiode
JPS5572083A (en) Semiconductor photo-detector
JPS55140285A (en) Semiconductor laser
JPS5645087A (en) Semiconductor device
JPS5680178A (en) Gaas solar cell
JPS5763867A (en) Compound semiconductor avalanche diode
JPS6455878A (en) Photovoltaic type infrared-ray detector
JPS5412261A (en) Semiconductor wafer
JPS5726486A (en) Manufacture of semiconductor device
JPS57111070A (en) Ingaas/inp semiconductor photodetector
JPS57112084A (en) Avalanche photodiode
JPS56111275A (en) Luminous semiconductor device
JPS5671988A (en) Semiconductor laser system
JPS5728387A (en) Semiconductor optical element
JPS57198668A (en) Light receiving element
JPS57104274A (en) Light receiving element
JPS57111073A (en) Semiconductor light-receiving element
JPS5736876A (en) Semiconductor photodetector
JPS56111276A (en) Luminous semiconductor device
JPS56101786A (en) Light emitting semiconductor device and manufacture thereof