JPS627143A - Epoxy resin molding material for sealing semiconductor - Google Patents

Epoxy resin molding material for sealing semiconductor

Info

Publication number
JPS627143A
JPS627143A JP14585985A JP14585985A JPS627143A JP S627143 A JPS627143 A JP S627143A JP 14585985 A JP14585985 A JP 14585985A JP 14585985 A JP14585985 A JP 14585985A JP S627143 A JPS627143 A JP S627143A
Authority
JP
Japan
Prior art keywords
silica
epoxy resin
particle diameter
molding material
equivalent ratio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14585985A
Other languages
Japanese (ja)
Inventor
Koji Mori
森 恒治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to JP14585985A priority Critical patent/JPS627143A/en
Publication of JPS627143A publication Critical patent/JPS627143A/en
Pending legal-status Critical Current

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Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To obtain a semiconductor sealing epoxy resin molding material having excellent crack resistance and moisture resistance by hydrophobically treating the surface of a silica with alkoxysilane, and further reducing filler particle diameter to displace the equivalent ratio of epoxy resin and hardener as compared with the normal one. CONSTITUTION:Silica which is hydrophobically treated in advance on the surface with alkoxysilanes in mean particle diameter of 15 microns or less and in the maximum particle diameter of 100 micron or less is used as a filler, and the equivalent ratio of epoxy resin and a hardener is set to a range of 1.1-1.5. A surfactant uses alkoxysilanes, is mixed in advance with silica, heat treated as required to form a hydrophobic film on the surface of the silica. If the equivalent ratio is lower than the specified range, low stress effect cannot be obtained to deteriorate the moisture resistance. If the silica is excessively rough, the filling property is improper, and the particle diameter is further reduced for the use wherein severe packing property is required.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は熱衝撃を受けた場合の耐クラツク性及び耐湿性
に優れた特長を持つ半導体封止用エイキシ樹脂成形材料
に関するものであシ、その特徴は表面を疎水化処理した
シリカを充填材として使用しさらにエポキシ樹脂と硬化
剤のバランスをずらすと共に充填材の粒径を小さくし高
耐湿化、低応力化を図っているところでおる。
[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to an Eixy resin molding material for semiconductor encapsulation that has excellent crack resistance and moisture resistance when subjected to thermal shock. Its characteristics include using silica whose surface has been made hydrophobic as a filler, changing the balance between the epoxy resin and hardening agent, and reducing the particle size of the filler to achieve high moisture resistance and low stress.

〔従来技術〕[Prior art]

従来半導体封止用工2キシ樹脂成形材料には、充填、坊
主としてシリカとレジンを結合させるためにカップリン
グ剤が用いられている。これは充填材/レジン界面をつ
なぎ組成物としての強度を高めることが主目的でありシ
ランカップリング剤(エポキシシラン・アミノシラン・
ビニルシラン等)が主として用いられている。
Conventionally, a coupling agent is used in a 2-oxy resin molding material for semiconductor encapsulation to bond silica and resin as a filler and a binder. The main purpose of this is to connect the filler/resin interface and increase the strength of the composition, and the silane coupling agent (epoxysilane, aminosilane,
(vinyl silane, etc.) are mainly used.

ところが、最近どれら用途で低応力化が強く要求されて
きた。これは最終製品が国際化し、多種多用に使用され
るため乱暴な取扱いや保管に対して今まで以上に耐える
ことが要求されてきた。又エポキシ樹脂と硬化剤はエポ
キシ基と水酸基の当量比・を1:1にするの“が従来技
術であシ、これだと、成形材料はあまりにも充填材/レ
ジンが強固に結合しているため最終製品が硬くもろくな
ってしまい、これら要求を満足することはできない。
However, recently there has been a strong demand for lower stress in all applications. This is because final products are becoming more international and used for a wide variety of purposes, so they are required to withstand rough handling and storage more than ever before. Also, the conventional technology is to make the epoxy resin and curing agent have an equivalent ratio of epoxy groups to hydroxyl groups of 1:1, but in this case, the filler/resin in the molding material is too tightly bonded. As a result, the final product becomes hard and brittle, making it impossible to satisfy these requirements.

例えば冷熱衝撃を与えると樹脂クラックを生じたシ耐湿
性が極端に悪くなるというような欠点が指摘されている
For example, it has been pointed out that there are drawbacks such as resin cracks that occur when thermal shock is applied, and moisture resistance becomes extremely poor.

〔発明の目的〕[Purpose of the invention]

本発明は従来熱衝撃を受けた場合の耐クラツク性及び耐
湿性に問題があった半導体封止用エイキシ樹脂成形材料
を抜本的に改良し、実用的製品の開発を目的として研究
した結果、シリカの表面をアルコキシシラン類で疎水化
処理し、さらにフィラ粒径を小さくすると共にエイキシ
樹脂と硬化剤の当量比(エイキシ樹脂/硬化剤)t−通
常よシずらずことによシ目的とする耐クラツク性及び耐
湿性に優れた半導体封止用エピキシ樹脂成形材料が得ら
れることを見い出したものである。
The present invention was developed as a result of research aimed at developing a practical product by fundamentally improving the Eixy resin molding material for semiconductor encapsulation, which previously had problems with crack resistance and moisture resistance when subjected to thermal shock. The surface of the resin is hydrophobized with alkoxysilanes, the filler particle size is further reduced, and the equivalent ratio of Eixy resin and hardening agent (Eyxy resin/hardening agent) is increased to achieve the desired resistance. It has been discovered that an epixy resin molding material for semiconductor encapsulation having excellent crack resistance and moisture resistance can be obtained.

(発明の構成〕 本発明は、予め表面をアルコキシシラン類で疎水化処理
を施した平均粒径が15ミクロン以下で最大粒径が10
0ミクロン以下のシリカを充填材として用いかつエイキ
シ樹脂と硬化剤の当量比(エポキシ樹脂/硬化剤)がL
1〜1.5の範囲内であることを特徴とする半導体封止
用エイキシ樹脂成形材料である。
(Structure of the Invention) The present invention has an average particle diameter of 15 microns or less and a maximum particle diameter of
Silica of 0 micron or less is used as a filler and the equivalence ratio of epoxy resin and curing agent (epoxy resin/curing agent) is L.
This is an Eixy resin molding material for semiconductor encapsulation, characterized in that it has a molecular weight within the range of 1 to 1.5.

一般的に、半導体封止用エポキシ樹脂成形材料  −は
、エピキシ樹脂・シリカ・処理剤・硬化剤・硬化促進剤
・離型剤・難燃剤・顔料等より構成される。特に現在汎
用の材料はクレゾールノボラック型エピキシ樹脂・フェ
ノールノボラッーク゛(硬化剤)・第3級アミン(硬化
促進剤)・シリカ(充填材)・シランカップリング剤(
処理剤)等より構成され、シリカ量としては50〜80
wt%が普通である。
Generally, an epoxy resin molding material for semiconductor encapsulation is composed of an epixy resin, silica, a processing agent, a curing agent, a curing accelerator, a mold release agent, a flame retardant, a pigment, and the like. In particular, the materials currently in general use are cresol novolak epixy resin, phenol novolac (curing agent), tertiary amine (curing accelerator), silica (filler), and silane coupling agent (
processing agent), etc., and the amount of silica is 50 to 80.
wt% is normal.

本発明では表面処理剤としてアルコキシシラン類を使い
、又これをシリカと予め混合さらに必要によシ加熱等の
処理を行ない、シリカ表面に疎水性被膜を形成させるこ
とが必須である。又添加量としてはシリカに対して1〜
3wt%が好ましい。
In the present invention, it is essential to use alkoxysilanes as a surface treatment agent and to mix this with silica in advance and, if necessary, to perform a treatment such as heating to form a hydrophobic film on the silica surface. Also, the amount added is 1 to 1 for silica.
3 wt% is preferred.

少なすぎると撥水効果・低応力効果が得られなかったり
、多すぎると成形材料に相溶せずにじみ出したりする場
合がある。さらに(エイキシ樹脂/硬化剤)の当量比は
1.1〜1.5の範囲内であることが必須である。この
範囲以下だと低応力効果が得られない(0,9〜1.l
)が耐湿性が悪くなる。
If it is too small, the water repellent effect and low stress effect may not be obtained, and if it is too large, it may not be compatible with the molding material and may ooze out. Furthermore, it is essential that the equivalent ratio of (Eixy resin/curing agent) be within the range of 1.1 to 1.5. Below this range, the low stress effect cannot be obtained (0.9 to 1.l
) has poor moisture resistance.

又、この範囲以上だと成形性(硬化性・パリ)が問題と
なる場合がある。
Moreover, if it exceeds this range, moldability (hardenability/paris) may become a problem.

シリカとしては、重量平均粒径が15ミクロン以下で最
大粒径が100ミクロン以下であることが必要である。
The silica needs to have a weight average particle size of 15 microns or less and a maximum particle size of 100 microns or less.

粗すぎると充填性等で問題を起こす。又フラット72ツ
ケージといった充填性の厳しい用途にはさらに粒径を小
さくしたもの例えば平均粒径が10ミクロン以下、最大
粒径が50ミクロン以下のものが好ましい。さらに特性
変動が問題となるような敏感な半導体封止用途には平均
粒径が5ミクロン以下、最大粒径が20ミクロン以下の
ものが好ましい。
If it is too rough, it will cause problems with filling properties, etc. Further, for applications such as flat 72 cages that require strict filling properties, particles with even smaller particle sizes, such as those with an average particle size of 10 microns or less and a maximum particle size of 50 microns or less, are preferable. Furthermore, for sensitive semiconductor encapsulation applications where characteristic fluctuations are a problem, particles with an average particle size of 5 microns or less and a maximum particle size of 20 microns or less are preferable.

〔発明の効果〕〔Effect of the invention〕

このように、本発明に従うと耐クラツク性及び耐湿性に
優れた半導体封止用エイキシ樹脂成形材料を得ることが
できる。特に今後ますますプラスチックノッケージ化が
予想され、又そのためにプラスチックの低応力化・高耐
湿化が要求されている今日においては本発明の産業的意
味役割は非常に大きい。
As described above, according to the present invention, an Eixy resin molding material for semiconductor encapsulation having excellent crack resistance and moisture resistance can be obtained. Particularly in today's world, where it is expected that more and more plastic packaging will be used in the future, and where plastics are required to have lower stress and higher moisture resistance, the present invention will play an extremely important role in industry.

〔実施例〕〔Example〕

以下、エポキシ樹脂成形材料の検討例で説明する。 The following is an explanation using a study example of an epoxy resin molding material.

例、で用いた部はすべて重量部である。All parts used in the examples are parts by weight.

本発明で用いた原料は次の通シである。The raw materials used in the present invention are as follows.

エピキシ樹脂 日本化薬       EOCN−10
20硬 化 剤  住友ベークラ−f )    フェ
ノールノボラック硬化促進剤  グーアイ化成/四国化
成 PP−360/2MZ=%離 型 剤  へキスト
ジャノξン   ヘキストOP/A、キストS=臀 シ リ カ  囚FS−891破砕状平均粒径 20ミ
クロン(電気化学工業)         最大粒径1
50ミクロン(B)FS−90破砕状平均粒径 15ミ
クロン最大粒径100ミクロン シランカップリング剤 チッソ     GPS−M表
 面 処 理 剤  トーレ・シリコーン 5Z−60
70製法 ■シリカとシランカッシリング剤、表面処理剤を加熱ニ
ーダ−に入れ120℃で30分子備混合する。こうして
得たシリカと他原料をさらに混合後120℃の熱ロール
で5分間混練する。
Epixy resin Nippon Kayaku EOCN-10
20 Curing agent Sumitomo Bakler-F) Phenol novolac curing accelerator Guai Kasei/Shikoku Kasei PP-360/2MZ=% Mold release agent Hoechst Jano ξn Hoechst OP/A, Kist S=butt silica FS-891 crushed Average particle size 20 microns (Denki Kagaku Kogyo) Maximum particle size 1
50 microns (B) FS-90 Crushed average particle size 15 microns Maximum particle size 100 microns Silane coupling agent Chisso GPS-M surface treatment agent Toray Silicone 5Z-60
70 Manufacturing method ■ Put silica, silane cassilling agent, and surface treatment agent into a heating kneader and mix at 120°C with 30 molecules. The thus obtained silica and other raw materials are further mixed and then kneaded for 5 minutes using heated rolls at 120°C.

■全原料を同時に混合後120℃の熱ロールで5分間混
練する。
(2) All raw materials are mixed at the same time and then kneaded for 5 minutes using heated rolls at 120°C.

〔検討例〕[Example of consideration]

シリカ70部、シランカッシリング剤0.3部、表面処
理剤0.3部及び工ぜキシ樹脂と硬化剤を合計で30部
、硬化促進剤0.2部、離型剤0.5部をシリカ粒径、
製法及び(エピキシ樹脂/硬化剤)の当量比に水準を取
シ表1のように試作した。これら10種の材料の特性及
び模擬ICの特性を計画した結果(表1)、本発明の手
法を用いることによシ耐クラック性・耐湿性いずれも抜
群の結果を得ることができた。
70 parts of silica, 0.3 part of silane cassilling agent, 0.3 part of surface treatment agent, 30 parts in total of engineered resin and curing agent, 0.2 part of curing accelerator, and 0.5 part of mold release agent. silica particle size,
Trial production was carried out as shown in Table 1, with the manufacturing method and the equivalent ratio of (epoxy resin/curing agent) being adjusted. As a result of planning the characteristics of these 10 types of materials and the characteristics of the simulated IC (Table 1), it was possible to obtain excellent results in both crack resistance and moisture resistance by using the method of the present invention.

Claims (1)

【特許請求の範囲】[Claims] 表面をアルコキシシラン類で疎水化処理を施した重量平
均粒径が15ミクロン以下で最大粒径が100ミクロン
以下のシリカを充填材として用い、さらにノボラック型
エポキシ樹脂とフェノールノボラック硬化剤の当量比(
エポキシ樹脂/硬化剤)が1.1〜1.5の範囲内であ
ることを特徴とする半導体封止用エポキシ樹脂成形材料
Silica whose surface has been hydrophobized with alkoxysilanes and has a weight average particle size of 15 microns or less and a maximum particle size of 100 microns or less is used as a filler, and the equivalent ratio of novolac-type epoxy resin and phenol novolac curing agent (
An epoxy resin molding material for semiconductor encapsulation, characterized in that the ratio (epoxy resin/curing agent) is within the range of 1.1 to 1.5.
JP14585985A 1985-07-04 1985-07-04 Epoxy resin molding material for sealing semiconductor Pending JPS627143A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14585985A JPS627143A (en) 1985-07-04 1985-07-04 Epoxy resin molding material for sealing semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14585985A JPS627143A (en) 1985-07-04 1985-07-04 Epoxy resin molding material for sealing semiconductor

Publications (1)

Publication Number Publication Date
JPS627143A true JPS627143A (en) 1987-01-14

Family

ID=15394725

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14585985A Pending JPS627143A (en) 1985-07-04 1985-07-04 Epoxy resin molding material for sealing semiconductor

Country Status (1)

Country Link
JP (1) JPS627143A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0276248A (en) * 1988-09-12 1990-03-15 Nitto Denko Corp Semiconductor device
JPH11103003A (en) * 1997-07-31 1999-04-13 Matsushita Electron Corp Semiconductor device and lead frame of semiconductor device
US6208023B1 (en) 1997-07-31 2001-03-27 Matsushita Electronics Corporation Lead frame for use with an RF powered semiconductor

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51144180A (en) * 1975-06-06 1976-12-10 Hitachi Ltd Resin sealing method of semiconductor unit
JPS5922955A (en) * 1982-07-29 1984-02-06 Toshiba Chem Corp Resin composition for sealing semiconductor
JPS5933125A (en) * 1982-08-19 1984-02-22 Toyo Rubber Chem Ind Co Ltd Manufacture of cushioning body
JPS59108026A (en) * 1982-12-10 1984-06-22 Toshiba Chem Corp Epoxy resin composition for sealing
JPS6017936A (en) * 1983-07-12 1985-01-29 Sumitomo Bakelite Co Ltd Resin composition for sealing semiconductor
JPS6047019A (en) * 1983-08-25 1985-03-14 Toshiba Chem Corp Sealing epoxy resin composition

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51144180A (en) * 1975-06-06 1976-12-10 Hitachi Ltd Resin sealing method of semiconductor unit
JPS5922955A (en) * 1982-07-29 1984-02-06 Toshiba Chem Corp Resin composition for sealing semiconductor
JPS5933125A (en) * 1982-08-19 1984-02-22 Toyo Rubber Chem Ind Co Ltd Manufacture of cushioning body
JPS59108026A (en) * 1982-12-10 1984-06-22 Toshiba Chem Corp Epoxy resin composition for sealing
JPS6017936A (en) * 1983-07-12 1985-01-29 Sumitomo Bakelite Co Ltd Resin composition for sealing semiconductor
JPS6047019A (en) * 1983-08-25 1985-03-14 Toshiba Chem Corp Sealing epoxy resin composition

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0276248A (en) * 1988-09-12 1990-03-15 Nitto Denko Corp Semiconductor device
JPH11103003A (en) * 1997-07-31 1999-04-13 Matsushita Electron Corp Semiconductor device and lead frame of semiconductor device
US6208023B1 (en) 1997-07-31 2001-03-27 Matsushita Electronics Corporation Lead frame for use with an RF powered semiconductor

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