JPH02189357A - Epoxy resin molding material for semiconductor sealing - Google Patents
Epoxy resin molding material for semiconductor sealingInfo
- Publication number
- JPH02189357A JPH02189357A JP1042589A JP1042589A JPH02189357A JP H02189357 A JPH02189357 A JP H02189357A JP 1042589 A JP1042589 A JP 1042589A JP 1042589 A JP1042589 A JP 1042589A JP H02189357 A JPH02189357 A JP H02189357A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- molding material
- silicone rubber
- properties
- resin molding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 30
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 30
- 239000012778 molding material Substances 0.000 title claims abstract description 24
- 238000007789 sealing Methods 0.000 title abstract description 7
- 229920002379 silicone rubber Polymers 0.000 claims abstract description 22
- 239000004945 silicone rubber Substances 0.000 claims abstract description 22
- 239000002245 particle Substances 0.000 claims abstract description 17
- 239000003607 modifier Substances 0.000 claims abstract description 16
- 125000000524 functional group Chemical group 0.000 claims abstract description 8
- 125000003700 epoxy group Chemical group 0.000 claims abstract description 7
- 125000003396 thiol group Chemical group [H]S* 0.000 claims abstract description 3
- 238000005538 encapsulation Methods 0.000 claims description 22
- 125000003277 amino group Chemical group 0.000 claims description 3
- 229920005989 resin Polymers 0.000 abstract description 9
- 239000011347 resin Substances 0.000 abstract description 9
- 229920003986 novolac Polymers 0.000 abstract description 7
- 238000002156 mixing Methods 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 4
- 125000002723 alicyclic group Chemical group 0.000 abstract description 2
- 239000004841 bisphenol A epoxy resin Substances 0.000 abstract description 2
- 230000001351 cycling effect Effects 0.000 abstract description 2
- 239000004593 Epoxy Substances 0.000 abstract 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 abstract 1
- 230000035882 stress Effects 0.000 description 19
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 6
- 238000005452 bending Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000000945 filler Substances 0.000 description 4
- 239000008188 pellet Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 229910002026 crystalline silica Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000004842 bisphenol F epoxy resin Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Landscapes
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は、半導体封止用エポキシ樹脂成形材料に関す
るものである。さらに詳しくは、この発明は、低応力性
、およびヒートサイクル性を著しく向上させた半導体封
止用エポキシ樹脂成形材料に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an epoxy resin molding material for semiconductor encapsulation. More specifically, the present invention relates to an epoxy resin molding material for semiconductor encapsulation that has significantly improved low stress properties and heat cycle properties.
（従来の技術）
半導体素子の封止用成形材料としては、従来より耐湿性
、耐熱性等の性能や、価格などの点においてエポキシ樹
脂を主成分とするものが広く使用されているが、近年で
は半導体素子の高密度、高集積化に伴い、素子の発熱に
よる熱疲労を低減すべく熱放散性を向上させること、半
導体素子と封止用樹脂との間に発生する熱応力を低減さ
せること、および成形性や耐湿性を向上させることが要
求されている。(Prior art) As a molding material for encapsulating semiconductor elements, epoxy resin-based materials have traditionally been widely used due to their performance such as moisture resistance and heat resistance, as well as their price. With the increasing density and integration of semiconductor devices, it is important to improve heat dissipation to reduce thermal fatigue caused by heat generation of devices, and to reduce thermal stress generated between semiconductor devices and sealing resin. , as well as improved moldability and moisture resistance.
このような半導体素子の封止の熱放散性、低応力性を向
上させるために、一般には、結晶性シリカやアルミナ等
のフィラーをエポキシ樹脂等の封止用樹脂組成物に配合
することがなされており、フィラーの種類や配合方法に
ついて種々の試みが提案されている。さらに、シリコン
系改質剤等の低応力改質剤を添加するなどの試みも提案
されている。In order to improve the heat dissipation properties and low stress properties of encapsulation of such semiconductor elements, fillers such as crystalline silica and alumina are generally blended into encapsulation resin compositions such as epoxy resins. Various attempts have been made regarding the types of fillers and blending methods. Furthermore, attempts have been made to add low-stress modifiers such as silicon-based modifiers.
（発明が解決しようとする課題）
しかしながら、これまでに知られている低応力改質剤を
使用した場合には低応力性の向上に限界があり、特に、
曲げ弾性率と線膨脹係数（α１）の双方を向上させるこ
とが困難であった。(Problems to be Solved by the Invention) However, when using the low stress modifiers known so far, there is a limit to the improvement of low stress properties.
It was difficult to improve both the flexural modulus and linear expansion coefficient (α1).
また、曲げ弾性率を低下させて低応力性の向上を図ろう
とすると曲げ強さが大幅に低下してパッケージクラック
が多発するようになり、かえってヒートサイクル性が低
下するという逆効果が生じていた。これらの欠点は、樹
脂封止の超大型ベレット化への対応を困難としてもいた
。Additionally, when attempting to improve low stress properties by lowering the bending modulus, the bending strength was significantly reduced, leading to frequent package cracks, and had the opposite effect of reducing heat cycle performance. . These drawbacks have made it difficult to adapt to ultra-large pellets for resin sealing.
この発明は以上の通りの事情に鑑みてなされたものであ
り、従来の半導体素子封止用の成形材料の欠点を改善し
、超大型ベレット化への対応も容易な、良好な低応力性
を実現し、かつ、ヒートサイクル性も著しく向上させる
ことのできる半導体封止用成形材料を提供することを目
的としている。This invention was made in view of the above-mentioned circumstances, and aims to improve the drawbacks of conventional molding materials for semiconductor element encapsulation, and to provide good low stress properties that can be easily adapted to ultra-large pellets. The object of the present invention is to provide a molding material for semiconductor encapsulation that can realize the above-mentioned properties and also significantly improve heat cycle properties.
（課題を解決するための手段）
この発明は、上記の課題を解決するものとして、表面に
有機官能基を有する平均粒径が１〜５μｍのシリコンゴ
ムを低応力改質剤として配合してなることを特徴とする
半導体封止用エポキシ樹脂成形材料を提供する。(Means for Solving the Problems) This invention solves the above problems by blending silicone rubber with an organic functional group on the surface and an average particle size of 1 to 5 μm as a low stress modifier. An epoxy resin molding material for semiconductor encapsulation is provided.
この発明においては、このように低応力改質剤として平
均粒径が１〜５μｍのシリコンゴムを使用するが、平均
粒径が１μｍ未満のものを使用すると成形性が低下し、
一方、平均粒径が５μｍを超えるものを使用すると曲げ
強さが低下して低応力性を十分に向上させることが困難
となり、ヒートサイクル性を高めることができない。ま
た、シリコンゴムの粒径としては、最大粒径を１０μｍ
以下とするのが好ましい、これ以上の場合には、同様に
低応力化は実現できない。In this invention, silicone rubber with an average particle size of 1 to 5 μm is used as the low stress modifier, but if a silicone rubber with an average particle size of less than 1 μm is used, the moldability decreases.
On the other hand, if the average particle size exceeds 5 μm, the bending strength decreases, making it difficult to sufficiently improve low stress properties and making it impossible to improve heat cycle properties. In addition, the maximum particle size of silicone rubber is 10 μm.
The following is preferable; if it is more than this, lower stress cannot be achieved.
シリコンゴムの種類としては、表面に有機官能基として
アミノ基、エポキシ基、メルカプト基などを有するもの
を用いるのが好ましい。これにより成形材料のエポキシ
樹脂中へのシリコンゴムの分散性や均一性を向上させる
ことができる。この場合、有機官能基は、従来公知の方
法等によって、シリコンゴムに対して１種または２種以
上存在させることができる。また、その含有料はシリコ
ンゴムに対して０．１〜ｔｏｗｔ％程度とするのが好ま
しい。As for the type of silicone rubber, it is preferable to use one having an organic functional group such as an amino group, an epoxy group, or a mercapto group on the surface. This makes it possible to improve the dispersibility and uniformity of the silicone rubber in the epoxy resin of the molding material. In this case, one or more organic functional groups can be present in the silicone rubber by a conventionally known method. Further, the content thereof is preferably about 0.1 to towt% based on silicone rubber.
このようなシリコンゴムのエポキシ樹脂材料への添加量
は、成形材料１００重量部に対して、０．０５〜１５重
量部程度とするのが好ましい、０．０５重量部未満の場
合には低応力化の効果が低く、一方、１５重量部を超え
て添加しても大きな効果はなく不経済となる。The amount of silicone rubber added to the epoxy resin material is preferably about 0.05 to 15 parts by weight per 100 parts by weight of the molding material. On the other hand, adding more than 15 parts by weight will not have a great effect and will be uneconomical.
シリコンゴムを配合するベース樹脂としては、＃＃湿性
、耐熱性等の性能の良好なものとして知られている従来
公知のエポキシ樹脂等を適宜使用することができる。こ
のようなエポキシ樹脂としては、たとえば、ノボラック
型エポキシ樹脂、ビスフェノールＡ型エポキシ樹脂、ビ
スフェノールＦ型エポキシ樹脂、脂環式エポキシ樹脂、
ハロゲン化エポキシ樹脂などを例示することができる。As the base resin in which the silicone rubber is blended, conventionally known epoxy resins that are known to have good properties such as moisture resistance and heat resistance can be used as appropriate. Examples of such epoxy resins include novolak epoxy resins, bisphenol A epoxy resins, bisphenol F epoxy resins, alicyclic epoxy resins,
Examples include halogenated epoxy resins.
また、硬化剤としてもノボラック型フェノール樹脂など
従来より使用されているものを用いることができる。特
に、ノボラック型フェノール樹脂としては、１分子中に
２個以上のフェノール性水酸基を有するものを好適な硬
化剤として例示することができる。Further, as a curing agent, a conventionally used curing agent such as a novolak type phenol resin can be used. In particular, as the novolak type phenolic resin, those having two or more phenolic hydroxyl groups in one molecule can be exemplified as suitable curing agents.
以上のように、この発明の半導体封止用成形材料は、従
来のエポキシ樹脂等を樹脂成分とする半導体封止用組成
物において、低応力改質剤として特定粒径の官能性基含
有のシリコンゴムを配合してなるものであるが、さらに
封止用樹脂としての特性を損なわない限り他の種々の充
填剤や添加剤を含有することができる。たとえば、結晶
性シリカ充填剤、シリコンオイル系改質剤、難燃剤、硬
化促進剤、離型剤、着色剤などを半導体素子の種類、用
途に応じて適宜配合することができる。As described above, the molding material for semiconductor encapsulation of the present invention can be used as a low stress modifier in a conventional semiconductor encapsulation composition containing an epoxy resin or the like as a resin component. Although it is made by blending rubber, it can further contain various other fillers and additives as long as the properties as a sealing resin are not impaired. For example, a crystalline silica filler, a silicone oil modifier, a flame retardant, a curing accelerator, a mold release agent, a coloring agent, etc. can be blended as appropriate depending on the type and use of the semiconductor element.
また、この発明の半導体封止用成形材料を用いて半導体
を封止する方法としては、従来と同様の方法を、封止す
る半導体素子等に応じて適宜採用することができる。Further, as a method for encapsulating a semiconductor using the molding material for semiconductor encapsulation of the present invention, the same conventional methods can be appropriately employed depending on the semiconductor element to be encapsulated.
（作 用）
この発明においては、低応力改質剤として、平均粒径が
１〜５μｍの官能性含有シリコンゴムを配合することに
より、半導体の封止を飛躍的に低応力化し、ヒートサイ
クル性を著しく向上させることができる。超大型ペレッ
ト化への対応を容易ともする。(Function) In this invention, by blending functionalized silicone rubber with an average particle size of 1 to 5 μm as a low stress modifier, the stress of semiconductor encapsulation can be dramatically reduced, and heat cycle resistance can be improved. can be significantly improved. It also facilitates the production of ultra-large pellets.
（実施例）
以下、実施例を示して、この発明の半導体封止用成形材
料をさらに詳しく説明する。(Example) Hereinafter, the molding material for semiconductor encapsulation of the present invention will be explained in more detail with reference to Examples.
実施例１
クレゾールノボラック型エポキシ樹脂にフェノールノボ
ラック系硬化剤と結晶シリカを配合し、これに低応力改
質剤として、平均粒径が１ノｚｍ（最大粒径５μｍ）で
表面にエポキシ基を有するシリコンゴムを３重量部添加
して半導体封止用エポキシ樹脂成形材料を製造した。Example 1 A phenol novolac hardener and crystalline silica were blended into a cresol novolac type epoxy resin, and as a low stress modifier, a resin with an average particle size of 1 novolac (maximum particle size 5 μm) and an epoxy group on the surface was added. An epoxy resin molding material for semiconductor encapsulation was produced by adding 3 parts by weight of silicone rubber.
得られた半導体封止用エポキシ樹脂成形材料により半導
体素子を封止し、その封止の曲げ強さ、曲げ弾性率、ヒ
ートサイクル性〈パッケージクラック）、耐湿性（Ｐ
ＣＴ ： ５ ａｔｎ、１５１°Ｃ，１００Ｒ１１％）
、成形性について評価した。A semiconductor element is encapsulated with the obtained epoxy resin molding material for semiconductor encapsulation, and the bending strength, flexural modulus, heat cycle property (package crack), and moisture resistance (P
CT: 5 atn, 151°C, 100R11%)
The moldability was evaluated.
また、成形性は、１０μｍ、２０μｍ、３０μｍのスリ
ットを用いたパリ特性について評価した。 これらの評
価結果は表１に示す通りであった。 後述の比較例との
対比から明らかなように、この実施例の封止は、これま
でにない低い曲げ弾性率を達成し、しかも十分な曲げ強
さを有し、高いし−トサイクル性を示した。また、耐湿
性、パリ特性についても優れた性質を示した。In addition, moldability was evaluated in terms of Paris properties using slits of 10 μm, 20 μm, and 30 μm. The results of these evaluations are shown in Table 1. As is clear from the comparison with the comparative example described below, the seal of this example achieved an unprecedentedly low flexural modulus, had sufficient flexural strength, and had high cycleability. Indicated. It also showed excellent moisture resistance and Paris properties.
実施例２
低応力改質剤として、平均粒径が３μｍ＜ａ大粒径６μ
ｍ）で表面にエポキシ基を有するシリコンゴムを５重量
部添加して実施例１と同様に半導体封止用エポキシ樹脂
成形材料を製造し、半導体素子を封止してその性質を評
価しな。Example 2 As a low stress modifier, the average particle size is 3 μm<a large particle size 6 μm
In step m), 5 parts by weight of silicone rubber having an epoxy group on the surface was added to produce an epoxy resin molding material for semiconductor encapsulation in the same manner as in Example 1, and a semiconductor element was encapsulated and its properties were evaluated.
結果を表１に示す。The results are shown in Table 1.
この実施例の封正においても、実施例１と同様に、極め
て低い曲げ弾性率を達成し、かつ十分な曲げ強さ、優れ
なし−トサイクル性、耐湿性、パリ特性を示した。Similarly to Example 1, in the sealing of this example, an extremely low flexural modulus was achieved, and sufficient flexural strength, excellent cycleability, moisture resistance, and Paris properties were exhibited.
実施例３
低応力改質剤として、平均粒径が３μｍ（最大粒径７μ
ｍ）で表面にエポキシ基とアミノ基を有するシリコンゴ
ムを３重量部添加して、実施例１と同様に半導体封止用
エポキシ樹脂成形材料を製造し、半導体素子を封止して
その性質を評価した。Example 3 As a low stress modifier, an average particle size of 3 μm (maximum particle size of 7 μm) was used.
In step m), 3 parts by weight of silicone rubber having an epoxy group and an amino group on the surface was added to produce an epoxy resin molding material for semiconductor encapsulation in the same manner as in Example 1, and a semiconductor element was encapsulated to determine its properties. evaluated.
結果を表１に示す。The results are shown in Table 1.
この実施例の封正においても、上記実施例と同様に、極
めて低い曲げ弾性率を達成し、かつ十分な曲げ強さ、優
れたし−トサイクル性、耐湿性、パリ特性を示した。In the sealing of this example as well, as in the above example, an extremely low flexural modulus was achieved, and sufficient flexural strength, excellent fatigue cycling properties, moisture resistance, and Paris properties were exhibited.
比較例１
低応力改質剤として、平均粒径が２０μｍで表面に有機
官能基をもたないシリコンゴムを３重量部添加して、実
施例１と同様に半導体封止用エポキシ樹脂成形材料を製
遺し、半導体素子を封止してその性質を評価した。Comparative Example 1 An epoxy resin molding material for semiconductor encapsulation was prepared in the same manner as in Example 1 by adding 3 parts by weight of silicone rubber with an average particle size of 20 μm and no organic functional group on the surface as a low stress modifier. A semiconductor device was sealed and its properties were evaluated.
結果を表１に示す。The results are shown in Table 1.
この比較例の封正においては、実施例の場合よりも高い
曲げ弾性率を示したが、曲げ強さが低下しており、ヒー
トサイクル性が著しく劣っていた。Although the seal of this comparative example showed a higher flexural modulus than that of the example, the flexural strength was decreased and the heat cycle property was significantly inferior.
また、耐湿性やパリ特性も十分なものではなかった。Furthermore, the moisture resistance and Paris properties were not sufficient.
比較例２
低応力改質剤として、平均粒径が２０μｍで表面にエポ
キシ基を有するシリコンゴムを３重量部添加して、実施
例１と同様に半導体封止用エポキシ樹脂成形材料を製造
し、半導体素子を封止してその性質を評価した。Comparative Example 2 An epoxy resin molding material for semiconductor encapsulation was produced in the same manner as in Example 1 by adding 3 parts by weight of silicone rubber having an average particle size of 20 μm and an epoxy group on the surface as a low stress modifier, The semiconductor device was sealed and its properties were evaluated.
結果を表１に示す。The results are shown in Table 1.
この比較例の封止においても高い弾性率と低い曲げ強さ
を示し、ヒートサイクル性、耐湿性、パリ特性が劣って
いた。The seal of this comparative example also exhibited high elastic modulus and low bending strength, and was inferior in heat cycle resistance, moisture resistance, and Paris properties.
（発明の効果）
この発明により、半導体封止樹脂の低応力性を向上させ
、ヒートサイクル性も向上させることができる。このな
め、この発明の半導体封止用エポキシ樹脂成形材料を用
いることにより、超大型ベレット化に対応することも容
易となる。(Effects of the Invention) According to the present invention, the low stress properties of the semiconductor encapsulating resin can be improved, and the heat cycle properties can also be improved. Therefore, by using the epoxy resin molding material for semiconductor encapsulation of the present invention, it becomes easy to adapt to the production of ultra-large pellets.
Claims (3)
均粒径が１〜５μｍのシリコンゴムを配合してなること
を特徴とする半導体封止用エポキシ樹脂成形材料。(1) An epoxy resin molding material for semiconductor encapsulation, which contains silicone rubber having an organic functional group on the surface and having an average particle size of 1 to 5 μm as a low stress modifier.
求項（１）記載の半導体封止用エポキシ樹脂成形材料。(2) The epoxy resin molding material for semiconductor encapsulation according to claim (1), which contains silicone rubber having a maximum particle size of 10 μm.
またはメルカプト基を有するシリコンゴムを配合した請
求項（１）記載の半導体封止用エポキシ樹脂成形材料。(3) Epoxy group, amino group and/or organic functional group
The epoxy resin molding material for semiconductor encapsulation according to claim 1, further comprising a silicone rubber having a mercapto group.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1010425A JPH0668061B2 (en) | 1989-01-19 | 1989-01-19 | Epoxy resin molding material for semiconductor encapsulation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1010425A JPH0668061B2 (en) | 1989-01-19 | 1989-01-19 | Epoxy resin molding material for semiconductor encapsulation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02189357A true JPH02189357A (en) | 1990-07-25 |
| JPH0668061B2 JPH0668061B2 (en) | 1994-08-31 |
Family
ID=11749799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1010425A Expired - Lifetime JPH0668061B2 (en) | 1989-01-19 | 1989-01-19 | Epoxy resin molding material for semiconductor encapsulation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0668061B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05132609A (en) * | 1991-11-11 | 1993-05-28 | Sumitomo Bakelite Co Ltd | Epoxy resin composition |
| WO2005054331A1 (en) * | 2003-12-01 | 2005-06-16 | Matsushita Electric Works, Ltd. | Epoxy resin composition and semiconductor device using the same |
| WO2007066763A1 (en) * | 2005-12-08 | 2007-06-14 | Hitachi Chemical Co., Ltd. | Liquid resin composition for electronic element and electronic element device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5834824A (en) * | 1981-08-26 | 1983-03-01 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and its production |
| JPS5996122A (en) * | 1982-11-22 | 1984-06-02 | Toray Silicone Co Ltd | Thermosetting epoxy resin composition |
| JPS61133223A (en) * | 1984-12-03 | 1986-06-20 | Matsushita Electric Works Ltd | Epoxy resin molding material for semiconductor sealing |
| JPS6262811A (en) * | 1985-09-11 | 1987-03-19 | Nippon Zeon Co Ltd | Epoxy resin composition for sealing semiconductor |
| JPS644614A (en) * | 1987-06-26 | 1989-01-09 | Shinetsu Chemical Co | Thermosetting epoxy resin composition |
| JPS6470558A (en) * | 1987-04-22 | 1989-03-16 | Toray Silicone Co | Granular silicone rubber and production thereof |
-
1989
- 1989-01-19 JP JP1010425A patent/JPH0668061B2/en not_active Expired - Lifetime
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5834824A (en) * | 1981-08-26 | 1983-03-01 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and its production |
| JPS5996122A (en) * | 1982-11-22 | 1984-06-02 | Toray Silicone Co Ltd | Thermosetting epoxy resin composition |
| JPS61133223A (en) * | 1984-12-03 | 1986-06-20 | Matsushita Electric Works Ltd | Epoxy resin molding material for semiconductor sealing |
| JPS6262811A (en) * | 1985-09-11 | 1987-03-19 | Nippon Zeon Co Ltd | Epoxy resin composition for sealing semiconductor |
| JPS6470558A (en) * | 1987-04-22 | 1989-03-16 | Toray Silicone Co | Granular silicone rubber and production thereof |
| JPS644614A (en) * | 1987-06-26 | 1989-01-09 | Shinetsu Chemical Co | Thermosetting epoxy resin composition |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05132609A (en) * | 1991-11-11 | 1993-05-28 | Sumitomo Bakelite Co Ltd | Epoxy resin composition |
| WO2005054331A1 (en) * | 2003-12-01 | 2005-06-16 | Matsushita Electric Works, Ltd. | Epoxy resin composition and semiconductor device using the same |
| WO2007066763A1 (en) * | 2005-12-08 | 2007-06-14 | Hitachi Chemical Co., Ltd. | Liquid resin composition for electronic element and electronic element device |
| US7981977B2 (en) | 2005-12-08 | 2011-07-19 | Hitachi Chemical Co., Ltd. | Sealant for electronics of epoxy resin, aromatic amine, accelerator and inorganic filler |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0668061B2 (en) | 1994-08-31 |
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