JPS6271904U - - Google Patents

Info

Publication number
JPS6271904U
JPS6271904U JP1985162726U JP16272685U JPS6271904U JP S6271904 U JPS6271904 U JP S6271904U JP 1985162726 U JP1985162726 U JP 1985162726U JP 16272685 U JP16272685 U JP 16272685U JP S6271904 U JPS6271904 U JP S6271904U
Authority
JP
Japan
Prior art keywords
line
transmission line
impedance
matching circuit
reactance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1985162726U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1985162726U priority Critical patent/JPS6271904U/ja
Publication of JPS6271904U publication Critical patent/JPS6271904U/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07554—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Waveguides (AREA)
  • Microwave Amplifiers (AREA)

Description

【図面の簡単な説明】
第１図はこの考案の一実施例によるインピーダ
ンス整合回路を示す斜視図、第２図はこの考案の
他の実施例を示す上面図、第３図は従来のインピ
ーダンス整合回路を示す斜視図である。 図において、１は半導体素子、２は誘電体基板
、４は伝送線路、５はリアクタンス線路、６１は
高インピーダンス伝送線路である。なお図中同一
符号は同一又は相当部分を示す。

Claims (1)

  1. 【実用新案登録請求の範囲】 (1) 誘電体基板上に形成された伝送線路と、該
    伝送線路に接続して形成された並列リアクタンス
    線路とを備えた半導体素子のインピーダンス整合
    回路において、 対向したリアクタンス線路間を接続するための
    、上記伝送線路の線路幅より細く形成され、かつ
    線路の特性インピーダンスが伝送線路より２倍以
    上高い高インピーダンス線路を備えたことを特徴
    とするインピーダンセ整合回路。 (2) 上記伝送線路、リアクタンス線路、及び高
    インピーダンス線路はマイクロストリツプ線路か
    らなることを特徴とする実用新案登録請求の範囲
    第１項記載のインピーダンス整合回路。
JP1985162726U 1985-10-23 1985-10-23 Pending JPS6271904U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1985162726U JPS6271904U (ja) 1985-10-23 1985-10-23

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1985162726U JPS6271904U (ja) 1985-10-23 1985-10-23

Publications (1)

Publication Number Publication Date
JPS6271904U true JPS6271904U (ja) 1987-05-08

Family

ID=31090263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1985162726U Pending JPS6271904U (ja) 1985-10-23 1985-10-23

Country Status (1)

Country Link
JP (1) JPS6271904U (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012512556A (ja) * 2008-12-16 2012-05-31 フリースケール セミコンダクター インコーポレイテッド 無線アプリケーション用高出力半導体素子および高出力半導体素子の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368074A (en) * 1976-11-29 1978-06-17 Nec Corp Microwave ic device and its manufacture
JPS5737903A (en) * 1980-08-14 1982-03-02 Nec Corp Distribution constant type matching circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368074A (en) * 1976-11-29 1978-06-17 Nec Corp Microwave ic device and its manufacture
JPS5737903A (en) * 1980-08-14 1982-03-02 Nec Corp Distribution constant type matching circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012512556A (ja) * 2008-12-16 2012-05-31 フリースケール セミコンダクター インコーポレイテッド 無線アプリケーション用高出力半導体素子および高出力半導体素子の製造方法

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