JPS627669A - Member for semiconductor - Google Patents
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- JPS627669A JPS627669A JP60142496A JP14249685A JPS627669A JP S627669 A JPS627669 A JP S627669A JP 60142496 A JP60142496 A JP 60142496A JP 14249685 A JP14249685 A JP 14249685A JP S627669 A JPS627669 A JP S627669A
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- Prior art keywords
- weight
- parts
- sic
- oxygen
- strength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- 238000010304 firing Methods 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 32
- 229910010271 silicon carbide Inorganic materials 0.000 description 32
- 238000005245 sintering Methods 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 12
- 239000002245 particle Substances 0.000 description 10
- 239000000843 powder Substances 0.000 description 8
- 238000005452 bending Methods 0.000 description 7
- 239000012300 argon atmosphere Substances 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000005011 phenolic resin Substances 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001272 pressureless sintering Methods 0.000 description 2
- 238000004901 spalling Methods 0.000 description 2
- 239000011882 ultra-fine particle Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- Ceramic Products (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業［の不１用
この発明は、半導体拡散炉の炉芯管、ボート、フォーク
のごとき半導体用部材、とくに高強度材料でつくられた
半導体用部材に関するものである。DETAILED DESCRIPTION OF THE INVENTION This invention relates to semiconductor components such as core tubes, boats, and forks of semiconductor diffusion furnaces, and particularly to semiconductor components made of high-strength materials.
ｍｉ記
従来のセラミック焼結体でつくられた半導体用部材たと
えば半導体用炉芯管は、強度が１５０ＭＰａ程度にすぎ
なかった。A conventional semiconductor member made of a ceramic sintered body, such as a semiconductor furnace core tube, has a strength of only about 150 MPa.
ところが、最近−半導体ウェハは大型化する傾向が強く
、ウェハの寸法おＪ：び干出が大きくなっている。たと
えば、５インチのウェハは１５グラム、６インチのウェ
ハは２０グラム、８インチのウェハは３６グラムである
。However, recently, there has been a strong tendency for semiconductor wafers to become larger, and the wafer dimensions and wafer size have increased. For example, a 5-inch wafer weighs 15 grams, a 6-inch wafer weighs 20 grams, and an 8-inch wafer weighs 36 grams.
また、これらのウェハを熱処理する炉芯管の直径は、６
インチのウェハで２３５ｍｍ、８インチのウェハで３０
０ｍｍである。また、１つのボートには２５〜５０枚の
ウェハを載置するのが一般的である。そのため、ウェハ
の大型化に伴って、ボートが支持づべき重石は著しく増
加する。フォークは４つのボートを支持（ることもあり
、より一段と大きな重量に耐えるようにしなければなら
ない。In addition, the diameter of the furnace core tube for heat-treating these wafers is 6
235mm for inch wafer, 30mm for 8 inch wafer
It is 0 mm. Moreover, it is common to place 25 to 50 wafers on one boat. Therefore, as the size of the wafer increases, the weight that the boat must support increases significantly. The fork may support four boats, so it must be able to withstand even more weight.
、 が ゛しようと る［ １
従来のセラミック焼結体でつくられた半導体用部材にお
いては、ウェハの大型化に十分に対処できない。たとえ
ば、炉芯管の場合、肉厚を大きくしなければならず、耐
スポーリングの問題が生じるばかりでなく、炉内の湿度
降下速度が低く、ランニングコストが高くなる。[1] Conventional semiconductor components made of ceramic sintered bodies cannot adequately cope with the increasing size of wafers. For example, in the case of a furnace core tube, the wall thickness must be increased, which not only causes the problem of spalling resistance, but also reduces the rate of humidity drop in the furnace, increasing running costs.
また、ボートやフォークの場合、割れや変形等のトラブ
ルが発生しやすくなる。Furthermore, in the case of boats and forks, problems such as cracking and deformation are more likely to occur.
１１丸ｌ立
この発明は、前述のような従来技術の欠点を解消して、
高強度の半導体用部材を提供することを目的としている
。This invention solves the drawbacks of the prior art as mentioned above,
The purpose is to provide high-strength semiconductor members.
ル１悲１１
したがって、この目的を達成するために、第１の発明は
、５ｉＣ５０〜９７”１ｍ部と、△９Ｎ１〜１０重量部
と、Ｃ１〜１０工猶部とを成形焼成してなる半導体用部
材を要旨としている。Therefore, in order to achieve this object, the first invention provides a semiconductor formed by molding and firing 1 m part of 5iC50-97'', 1-10 parts by weight of Δ9N, and a C1-10 process part. The main points are the parts and materials used.
また、第２の発明は、Ｓｉ ０５０〜９７重分部と、Ａ
’２Ｎ１〜１０重邑部と、Ｃ１〜１０重量部と、Ａ’）
２０３１〜３０重量部を成形焼成してなる半導体用部材
を要旨としている。Further, the second invention provides a Si 050-97 overlapped portion and an A
'2N1~10 parts by weight, C1~10 parts by weight, A')
The gist is a semiconductor member formed by molding and firing 2031 to 30 parts by weight.
ＩＪ を ′ ゛るための
本発明者等は炭化ケイ素質焼結体のひずみの発生につい
てその原因を究明したところ、原ＩＩのＳｉＣにおける
含有酸素量によって焼結体の特性が大きく影響されるこ
とを発見しｌこ 。In order to improve IJ, the present inventors investigated the cause of distortion in silicon carbide sintered bodies and found that the properties of the sintered bodies were greatly affected by the amount of oxygen contained in the SiC of original II. I discovered this.
炭化ケイ素はその粒子表面が常温であっても空気によっ
て酸化され、特に１μｍ以下のような超微粒子の場合は
酸化の度合が著しい。Silicon carbide is oxidized by air even if its particle surface is at room temperature, and the degree of oxidation is particularly significant in the case of ultrafine particles of 1 μm or less.
一般的にいって、ＳｉＣ中の酸素量は表面積に比例して
増大する。換言すれば、粒子径が小になれば、それだけ
ＳｉＣ中の酸素量が大きくなるのである。Generally speaking, the amount of oxygen in SiC increases in proportion to the surface area. In other words, the smaller the particle size, the larger the amount of oxygen in SiC.
このような炭化ケイ素中の酸素による影響について説明
すれば１．ｌ Ｎは、５ｉＣ−ＡＱ Ｎ−Ｃ系において
液相で反応が進むため、均質性の点でホウ素にりも好ま
しい焼結助剤であるが、ＳｉＣ中の酸素による妨害を受
けやすい。そのため、従来は含有酸素量が比較的多い５
ｉＣ（例えば約１重量％の酸素を含むＳｉ Ｃ）の場合
は、ＳｉＣ中の酸素による妨害の度合が大きく、Δ９Ｎ
を焼結助剤として用いても優れた効果が１９られなかっ
た。The effects of oxygen in silicon carbide can be explained as follows: 1. Since lN reacts in the liquid phase in the 5iC-AQ N-C system, boron is also a preferred sintering aid in terms of homogeneity, but it is susceptible to interference by oxygen in SiC. Therefore, in the past, the amount of oxygen contained was relatively high.
In the case of iC (for example, SiC containing about 1% by weight of oxygen), the degree of interference by oxygen in SiC is large, and Δ9N
Even when used as a sintering aid, no excellent effect was obtained.
このような観点から、従来、ＳｉＣ中の含有酸素量は、
少なくともＡ［Ｎを焼結助剤、とじて使用する場合は、
小さいほど好ましいとされてきたのである。ＡＱ Ｎを
添加する場合は、ＳｉＣ中の酸素量を小さく設定するこ
と、つまりＳｉＣの粒径を大きく設定することが必要で
あった。それゆえ、他の諸点では３ｉＣ粉末の粒径は小
さいほど好ましいことがわかっていても、そのような超
微粒子は実際には１吏用できなかった。From this point of view, conventionally, the amount of oxygen contained in SiC is
When using at least A[N as a sintering aid,
It has been believed that the smaller the size, the better. When adding AQN, it was necessary to set the amount of oxygen in SiC small, that is, to set the particle size of SiC large. Therefore, even though it is known that the smaller the particle size of 3iC powder is in other respects, it has not been possible to actually use such ultrafine particles.
しかしながら、本発明者等は反応系の中にＣを含有せし
めることによって前述のごときＳｉＣ中の含有酸素によ
る妨害を副部できることを解明した。However, the present inventors have discovered that the above-mentioned interference caused by the oxygen contained in SiC can be reduced by incorporating C into the reaction system.
そこで、この発明は、このような複数成分の相互関係を
巧みに生かし、まずＣの添加により炭化ケイ素を無酸素
状態にし、しかるのちΔ９Ｎを焼結助剤として焼結させ
るものである。それゆえ反応が理想的な状態で行なわれ
る。Therefore, the present invention skillfully takes advantage of the interrelationships among a plurality of components to first render silicon carbide in an oxygen-free state by adding C, and then sinter it using Δ9N as a sintering aid. Therefore, the reaction takes place under ideal conditions.
ＳＩＣ中の酸素の影響をうけずに、Ｉ Ｎは、例えば２
０００℃以上の焼結温度において液相となり、△９がＳ
ｉと均一に買換されやすい。したがって焼結体は均質と
なり、高強度となる。Without the influence of oxygen in the SIC, I N is, for example, 2
It becomes a liquid phase at a sintering temperature of 000℃ or higher, and △9 is S
It is easy to exchange with i. Therefore, the sintered body becomes homogeneous and has high strength.
また、第２発明にあっては、炭化ケイ素をＡ９２０３−
ＡＱ Ｎ−Ｃ系の焼結助剤で焼結させ、高強度の自焼結
炭化ケイ素をつくる。その場合、５ｉＣ−Ａ９Ｎは全律
固溶する。したがってＳｉ Ｃ−ＡＱｚＯ３−ＡＱ Ｎ
−Ｃ系では炭化ケイ素は自焼結する。この系にあっては
液相焼結であり、そのため、同相焼結のものに比べて均
一な焼結組織を作り易い。Moreover, in the second invention, silicon carbide is A9203-
Sintered with AQ N-C based sintering aid to create high strength self-sintered silicon carbide. In that case, 5iC-A9N is completely dissolved in solid solution. Therefore, Si C-AQzO3-AQ N
-C-based silicon carbide self-sinters. This system uses liquid phase sintering, which makes it easier to create a uniform sintered structure compared to in-phase sintering.
また、Ａ Ｑ２０３を添加すると、Ａ ９２０３の一部
がＣにより還元され、活性なＡ！２が生成し、他の酸化
物の不純物が焼結炭化ケイ素の粒界にα−△Ｉｌ！２０
３として存在する。炭化ケイ素と、炭化ケイ素焼結組織
に存在するＡｌ２Ｏ３との熱膨張の差によって焼結体の
歪みを除く作用をする。このため焼結体の強度は９００
ＭＰａにも達する。また、ワイブル係数は１５となり、
きわめて信頼性が高くなる。Furthermore, when AQ203 is added, a part of A9203 is reduced by C, resulting in active A! 2 is generated, and other oxide impurities are present at the grain boundaries of sintered silicon carbide. 20
It exists as 3. The difference in thermal expansion between silicon carbide and Al2O3 present in the silicon carbide sintered structure acts to remove distortion in the sintered body. Therefore, the strength of the sintered body is 900
It also reaches MPa. Also, the Weibull coefficient is 15,
Extremely reliable.
このようなことを勘案して、この発明にあっては、組成
を次のとおり限定した。すなわち、第１発明ではＳｉ
０５０〜９７重分部と、Ａｉｌ Ｎ１〜１０１最部、！
：、０１〜１０重量部にし、第２発明では、ざらに、Ａ
Ｑ ２０３１〜３０重量部、Ｃ加したのである。Taking these matters into consideration, in this invention, the composition is limited as follows. That is, in the first invention, Si
050-97 overlapped part and Ail N1-101 most part,!
:, 01 to 10 parts by weight, and in the second invention, Zara, A
Q: 2031 to 30 parts by weight of C was added.
組成をそのように限定した理由を以下詳細に説明する。The reason for limiting the composition in this way will be explained in detail below.
ＡＱ Ｎは、１重量部より小だと焼結助剤としての十分
な効果が得られず、１０重量部より大だと強度が著しく
低下する。When AQN is less than 1 part by weight, sufficient effect as a sintering aid cannot be obtained, and when it is more than 10 parts by weight, the strength is significantly reduced.
Ｃは、１重量部より小だと焼結助剤として添加した窒化
物が焼結助剤として作用しなくなって強度の低下を沼き
、１０重量部より大だと焼結体としての耐酸化性が悪化
し、強度も低下する。If C is less than 1 part by weight, the nitride added as a sintering aid will no longer function as a sintering aid, resulting in a decrease in strength, and if it is more than 10 parts by weight, the oxidation resistance of the sintered body will deteriorate. The properties deteriorate and the strength also decreases.
ＡＱ ２０３は１重量部より小だと強度の向上が認めら
れず、３０重量部より大だと強度の低下が著しくなる。If AQ 203 is less than 1 part by weight, no improvement in strength will be observed, and if it is more than 30 parts by weight, the strength will be significantly reduced.
本発明の好ましい実Ｍ態様では、炭化ケイ素の比表面積
を２０ｍ２／Ｆ以上（好しくは約４５ｆｆ１２／ｇ）に
するか、又は酸素を１．５１母％以上含む炭化ケイ素を
使用して、焼結体の特性を一段と優れたものにする。In a preferred embodiment M of the present invention, the specific surface area of silicon carbide is set to 20 m2/F or more (preferably about 45 ff12/g), or silicon carbide containing 1.51% or more of oxygen is used. Improve the properties of the body.
支克乱上
平均粒径の１μｍのＳｉＣ粉末７９重量部と、Ａ！２２
０３１５重量部と、Ｃ４重量部と、ＡｌＮ２重伍部を配
合し、フェノールレジンを粘結剤として添加して混練成
形し、アルゴン雰囲気下で１８００℃の温度で常圧焼結
を行なって、理論密度に対し９８〜８０％の緻密体を得
た。その２０℃における曲げ強さは９００ＭＰａであっ
た。79 parts by weight of SiC powder with an average particle diameter of 1 μm and A! 22
0315 parts by weight, C4 parts by weight, and 2 parts by weight of AlN were mixed, kneaded and molded with the addition of phenol resin as a binder, and pressureless sintered at a temperature of 1800°C in an argon atmosphere. A dense body with a density of 98 to 80% was obtained. Its bending strength at 20°C was 900 MPa.
１１糺り
平均粒径１０μｍのＳｉＣ粉末に４重量部のＣと２車ａ
部のＡ９Ｎを配合し、フェノールレジンを粘結剤として
使用して混練成形し、アルゴン雰囲気下で２１ＱＯ℃の
常圧焼結を行って、理論密度に対し９８〜８０重量％の
緻密体を得た。その２０’Ｃにおける曲げ強さは８５０
ＭＰａであった。11 SiC powder with an average particle diameter of 10 μm, 4 parts by weight of C and 2 wheels a
A9N was mixed and molded using phenol resin as a binder, and pressureless sintering was performed at 21QO℃ in an argon atmosphere to obtain a dense body with a density of 98 to 80% by weight based on the theoretical density. Ta. Its bending strength at 20'C is 850
It was MPa.
支１ＪＬＩＬ
平均粒径１μｍのＳｉＣ粉末をポットミルに入れて、水
を含まないアセトンを使用して平均粒径０．５μｍにな
るまで粉砕した。Support 1 JLIL SiC powder with an average particle size of 1 μm was placed in a pot mill and ground using water-free acetone until the average particle size was 0.5 μm.
このような超微粒のＳｉＣ粉末を常温で空気にさらし、
ＳｉＣの粒子表面積を一部酸化させた。その際、それら
の酸化を管理して、ＳｉＣ内の酸素含有量を０．５１量
％、１重層％、１．５重量％、２重量％、４重Ｍ％にし
たものを得た。Such ultra-fine SiC powder is exposed to air at room temperature,
Part of the SiC particle surface area was oxidized. At that time, the oxidation was controlled to obtain SiC with an oxygen content of 0.51% by weight, 1% by weight, 1.5% by weight, 2% by weight, and 4% by weight.
そのように一部間化された各ＳｉＣ粉末に３重量部のＣ
と１重は部の△９Ｎを配合し、フェノールレジンを粘結
剤として使用して混練成形し、アルゴン雰囲気下で２１
００℃の常圧焼結を行って、理論密度に対し９８〜８０
重」％のｍ密林を得た。これらのものの２０℃における
曲げ強さは表１に示す通りであった。表１からも明らか
なように、ＳｉＣ中の酸素量が１．５重量％を超えると
、曲げ強さが増加する。3 parts by weight of C was added to each SiC powder so partially oxidized.
and 1 part △9N were mixed and molded using phenol resin as a binder, and 21 parts were mixed in an argon atmosphere.
Perform pressureless sintering at 00℃ to achieve a density of 98 to 80 compared to the theoretical density.
% m dense forest was obtained. The bending strength of these products at 20° C. was as shown in Table 1. As is clear from Table 1, when the amount of oxygen in SiC exceeds 1.5% by weight, the bending strength increases.
支１１上
平均粒径１μｍのＳｉＣ粉末にＡ ９２０３、Ｃおよび
Ａ９Ｎを配合し、フェノールレジンを粘結剤として添加
して混練成形し、アルゴン雰囲気下で１８００℃の温度
で常圧焼結を行なって、理論密度に対し９８〜８０重最
％の単口体を１７だ。これらのものの２０’Ｃにおける
曲げ強１立は表２に示すとおりであった。A9203, C and A9N were blended with SiC powder with an average particle size of 1 μm on support 11, and phenol resin was added as a binder, kneaded and molded, and pressureless sintered at a temperature of 1800°C in an argon atmosphere. So, the single mouth material with the maximum weight of 98 to 80% of the theoretical density is 17. The bending strength of these materials at 20'C was as shown in Table 2.
表２からも明らかなように、ＳｉＣ粉末の比表面積が２
０ｍ２／ｇを超えると、曲げ強度が増加する。As is clear from Table 2, the specific surface area of SiC powder is 2
When it exceeds 0 m2/g, the bending strength increases.
ｌ肚灸立１
以上の説明からも明らかなように、本発明によれば、従
来のものに比較して高強度の半。1 As is clear from the above explanation, according to the present invention, the intensity is half that of the conventional one.
導体用部材が１９られる。とくに最適の条件にすれば、
９００ＭＰａの高強度のものが得られる。A conductor member 19 is provided. Especially under optimal conditions,
A high strength of 900 MPa can be obtained.
それゆえ、本発明によれば、半導体用部材を２〜３ｍｍ
の薄肉にしても十分に実用に洪しえることになり、耐ス
ポーリング性が格段に向上し、とくに大型の炉芯管に適
用した場合、肉薄により炉内の温度降下速度を大きくで
き、ランニングコストを大幅に低減できるという実務上
きわめて顕著な効果を奏する。Therefore, according to the present invention, the thickness of the semiconductor member is 2 to 3 mm.
Even if the wall is thin, it can be put to practical use, and the spalling resistance is greatly improved.Especially when applied to a large furnace core tube, the thin wall makes it possible to increase the rate of temperature drop in the furnace, and the running This has an extremely significant practical effect in that costs can be significantly reduced.
また、′本発明によれば、従来のものに比較して比較的
低温で焼結できる。とくに従来は実際上全く不可能とさ
れていた１ ９００℃以下の温度でも所望の焼結が実施
できる。したがって製造コストの低減がはかれる。Furthermore, according to the present invention, sintering can be performed at a relatively low temperature compared to conventional methods. In particular, desired sintering can be performed at temperatures below 1900°C, which was previously considered to be completely impossible. Therefore, manufacturing costs can be reduced.
さらに、本発明にあっては、焼結体が気孔率１％以下で
緻密であるため、３ｉの含浸が不要である。Furthermore, in the present invention, since the sintered body is dense with a porosity of 1% or less, impregnation with 3i is not necessary.
表 １
酸素含有量〈重量％） 曲げ強度（ＭＰａ
）Table 1 Oxygen content (wt%) Bending strength (MPa
)
Claims (4)
なる半導体用部材。(1) A semiconductor member formed by molding and firing 50 to 97 parts by weight of SiC, 1 to 10 parts by weight of AlN, and 1 to 10 parts by weight.
３１〜３０重量部を成形焼成してなる半導体用部材。(2) 50 to 97 parts by weight of SiC, 1 to 10 parts by weight of AlN, 1 to 10 parts by weight of C, and Al_2O_
A semiconductor member formed by molding and firing 31 to 30 parts by weight.
半導体用部材。(3) The semiconductor member according to claim 1 or 2, which uses SiC containing 1.5% by weight or more of oxygen.
用した特許請求の範囲第１項または第２項に記載の半導
体用部材。(4) The semiconductor member according to claim 1 or 2, which uses SiC having a specific surface area of 20 m^2/g or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60142496A JPS627669A (en) | 1985-07-01 | 1985-07-01 | Member for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60142496A JPS627669A (en) | 1985-07-01 | 1985-07-01 | Member for semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS627669A true JPS627669A (en) | 1987-01-14 |
| JPH0583513B2 JPH0583513B2 (en) | 1993-11-26 |
Family
ID=15316680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60142496A Granted JPS627669A (en) | 1985-07-01 | 1985-07-01 | Member for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS627669A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63257218A (en) * | 1987-03-30 | 1988-10-25 | ノートン カンパニー | Component of diffusion furnace |
| JPH01119560A (en) * | 1987-10-31 | 1989-05-11 | Toshiba Ceramics Co Ltd | Electrically conductive silicon carbide sintered body |
| JPH01131059A (en) * | 1987-11-17 | 1989-05-23 | Toshiba Ceramics Co Ltd | Production of furnace core tube of silicon carbide |
| JP2012180230A (en) * | 2011-02-28 | 2012-09-20 | Tokyo Yogyo Co Ltd | Conductive ceramic sintered compact |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS553396A (en) * | 1978-06-15 | 1980-01-11 | Carborundum Co | Silicon carbideealuminum nitride sintered product and its manugacture |
| JPS57148344A (en) * | 1981-03-10 | 1982-09-13 | Nec Corp | Manufacturing equipment for semiconductor |
| JPS5950086A (en) * | 1982-09-17 | 1984-03-22 | 南九州化学工業株式会社 | Coated granular potassium fertilizer |
-
1985
- 1985-07-01 JP JP60142496A patent/JPS627669A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS553396A (en) * | 1978-06-15 | 1980-01-11 | Carborundum Co | Silicon carbideealuminum nitride sintered product and its manugacture |
| JPS57148344A (en) * | 1981-03-10 | 1982-09-13 | Nec Corp | Manufacturing equipment for semiconductor |
| JPS5950086A (en) * | 1982-09-17 | 1984-03-22 | 南九州化学工業株式会社 | Coated granular potassium fertilizer |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63257218A (en) * | 1987-03-30 | 1988-10-25 | ノートン カンパニー | Component of diffusion furnace |
| JPH01119560A (en) * | 1987-10-31 | 1989-05-11 | Toshiba Ceramics Co Ltd | Electrically conductive silicon carbide sintered body |
| JPH01131059A (en) * | 1987-11-17 | 1989-05-23 | Toshiba Ceramics Co Ltd | Production of furnace core tube of silicon carbide |
| JP2012180230A (en) * | 2011-02-28 | 2012-09-20 | Tokyo Yogyo Co Ltd | Conductive ceramic sintered compact |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0583513B2 (en) | 1993-11-26 |
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