JPS628157B2 - - Google Patents

Info

Publication number
JPS628157B2
JPS628157B2 JP56039943A JP3994381A JPS628157B2 JP S628157 B2 JPS628157 B2 JP S628157B2 JP 56039943 A JP56039943 A JP 56039943A JP 3994381 A JP3994381 A JP 3994381A JP S628157 B2 JPS628157 B2 JP S628157B2
Authority
JP
Japan
Prior art keywords
radiation
electrode
barrier junction
radiation source
schottky barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56039943A
Other languages
Japanese (ja)
Other versions
JPS57154083A (en
Inventor
Haruo Hosomatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
YOKOKAWA DENKI KK
Original Assignee
YOKOKAWA DENKI KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by YOKOKAWA DENKI KK filed Critical YOKOKAWA DENKI KK
Priority to JP56039943A priority Critical patent/JPS57154083A/en
Publication of JPS57154083A publication Critical patent/JPS57154083A/en
Publication of JPS628157B2 publication Critical patent/JPS628157B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/24Measuring radiation intensity with semiconductor detectors

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Apparatus For Radiation Diagnosis (AREA)

Description

【発明の詳細な説明】 本発明は、X線CT等に用いられる多チヤネル
形放射線検出器を具えたCTスキヤナに関するも
のである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a CT scanner equipped with a multi-channel radiation detector used in X-ray CT and the like.

第1図は従来公知の、X線CTに用いられてい
る連続回転方式のCTスキヤナの原理的構成図で
ある。図において、1は放射線(ここではX線)
線源で、被検体の置かれる視野2の中央部に位置
する回転中心0を中心に回転するようになつてい
る。この線源1は視野2を内包するに十分な広が
りを有するパルスフアンビームを発生する。3は
X線を検出し、その放射線量に対応した電気信号
の得られる放射線検出器である。更に詳説すれ
ば、検出器3は一種の電離箱で、線源1を中心と
する円周上に円弧状に配列されている。第2図は
このような電離箱の一例を示す構成斜視図であ
る。すなわち、絶縁体サポート31,32の間に
高圧電極33aと信号電極33bとを交互に例え
ば0.5mm〜1.0mmの間隔で配列し、これらを高圧キ
セノンガス(10〜25気圧のXeガス)の封入され
た容器(図示せず)内に収容して弓形の電離箱を
形成してある。各電極板は電極間ギヤツプを1.0
mm程度以下と小さくする必要があることから、
0.1mm程度の薄いしかもX線の透視しにくいタン
グステン材料が用いられている。
FIG. 1 is a diagram showing the basic configuration of a conventionally known continuous rotation type CT scanner used for X-ray CT. In the figure, 1 is radiation (here X-ray)
The radiation source rotates around a rotation center 0 located at the center of the field of view 2 where the subject is placed. This radiation source 1 generates a pulsed fan beam with sufficient spread to encompass a field of view 2. 3 is a radiation detector that detects X-rays and obtains an electrical signal corresponding to the radiation dose. More specifically, the detectors 3 are a type of ionization chamber, and are arranged in an arc shape on the circumference with the radiation source 1 at the center. FIG. 2 is a perspective view showing an example of such an ionization chamber. That is, high-voltage electrodes 33a and signal electrodes 33b are arranged alternately at intervals of, for example, 0.5 mm to 1.0 mm between the insulator supports 31 and 32, and these are filled with high-pressure xenon gas (Xe gas at 10 to 25 atmospheres). The ionization chamber is housed in an arcuate container (not shown) to form an arcuate ionization chamber. Each electrode plate has a gap of 1.0 between the electrodes.
Because it needs to be small, about mm or less,
Tungsten material is used, which is about 0.1 mm thin and difficult to see through X-rays.

しかしながら、このような構成の電離箱を使用
したCTスキヤナには次のような多くの問題が存
在する。すなわち、封入したXeガスが容器より
漏洩するため検出器の寿命が1年程度と短く、
感度も漸次減少する。また、製作上多数の電極
板を決つた方向に並べるために多数の工数と困
難を伴うこと、使用上にあたつては電極板の振
動によるノイズが問題となり、マウント方法等に
制約が生じること、容器のAl材によるX線の
吸収により結果として被検者に無駄な余分の被曝
を与えることなどの問題点がある。更にまた、電
離箱の特徴として、指向性が良く、散乱線による
ノイズを減少し得るとされているが、現実にはX
線源の焦点の移動(例えば熱膨張などに起因する
移動)が指向性の鋭さによつて見掛上のX線分布
変動ノイズとして生じている。このノイズは散乱
線によるノイズよりも大きく、従つて指向性の良
さがX線源に対する条件を大変厳しくしている
という事実がある。
However, CT scanners that use an ionization chamber with such a configuration have many problems as described below. In other words, the lifespan of the detector is short, about one year, because the sealed Xe gas leaks from the container.
Sensitivity also decreases gradually. In addition, the manufacturing process involves a large number of man-hours and difficulties in arranging a large number of electrode plates in a fixed direction, and during use, noise due to vibration of the electrode plates becomes a problem, which creates restrictions on mounting methods, etc. However, there are problems in that the X-rays are absorbed by the Al material of the container, resulting in the subject being exposed to unnecessary radiation. Furthermore, although it is said that the ionization chamber has good directivity and can reduce noise caused by scattered radiation, in reality,
Movement of the focal point of the radiation source (for example, movement due to thermal expansion) occurs as apparent X-ray distribution fluctuation noise due to the sharpness of the directivity. This noise is larger than the noise caused by scattered radiation, and the fact is that good directivity places very strict conditions on the X-ray source.

本発明は、このような〜の問題点を解決す
るために、従来の電離箱に代えて簡単な構造の無
指向性固体検出器アレイを用いたCTスキヤナを
提供することにある。
In order to solve these problems, the present invention provides a CT scanner that uses a simple structured omnidirectional solid-state detector array in place of the conventional ionization chamber.

以下図面を用いて本発明を実施例につき詳細に
説明する。第3図は本発明に係るCTスキヤナの
一実施例を示す原理的構成図である。第3図にお
いて、4は無指向性固体検出器アレイで、X線源
1からのX線を検出するものである。このアレイ
4は、線源1を円の中心としたときの弦の関係で
線源に対向配置している。第4図はこのアレイの
拡大図である。第4図において、5は例えば
CdTeのような高原子番号の化合物半導体単結晶
基板である。このCdTe単結晶基板は、CdとTe
とを等化学当量混合し、これを石英ガラスアンプ
ルに真空封入した後、ブリツジマン炉等で加熱し
結晶化し、得られた単結晶インゴツトを切断、加
工して作られる。単結晶基板5の寸法形状の一例
は、第4図に示した通りで、櫛形状となつてお
り、幅が0.9〜0.8mmの残留部分51,52,53
…と、0.1〜0.2mm幅で、深さが0.8〜1.0mmの切り
込み部61,62,63…を一定間隔で有してい
る。基板5の背面(基板が連続している側の裏
面)には、例えばPtで構成されるオーミツク接合
電極70が形成され、また、残留部の頂点部(櫛
形状の歯の先端部分)には、例えばAlで構成さ
れるシヨツトキーバリア接合電極81,82,8
3…が形成されている。これら各電極の単結晶基
板5への形成は、例えば蒸着法又はスパツター法
によつてなされる。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below with reference to the drawings. FIG. 3 is a diagram showing the basic configuration of an embodiment of the CT scanner according to the present invention. In FIG. 3, reference numeral 4 denotes a non-directional solid-state detector array, which detects the X-rays from the X-ray source 1. This array 4 is arranged to face the radiation source in a chord relationship with the radiation source 1 as the center of the circle. FIG. 4 is an enlarged view of this array. In Figure 4, 5 is for example
It is a single crystal substrate of a high atomic number compound semiconductor such as CdTe. This CdTe single crystal substrate is composed of Cd and Te.
The mixture is vacuum sealed in a quartz glass ampoule, heated and crystallized in a Bridgeman furnace, etc., and the resulting single crystal ingot is cut and processed. An example of the dimensions and shape of the single crystal substrate 5 is as shown in FIG. 4, which has a comb shape, and has residual portions 51, 52, 53 with a width of 0.9 to 0.8 mm.
...and have cut portions 61, 62, 63... having a width of 0.1 to 0.2 mm and a depth of 0.8 to 1.0 mm at regular intervals. An ohmic junction electrode 70 made of, for example, Pt is formed on the back surface of the substrate 5 (the back surface on the side where the substrate is continuous), and an ohmic contact electrode 70 made of, for example, Pt is formed on the apex portion of the remaining portion (the tip portion of the comb-shaped teeth). , for example, shot key barrier junction electrodes 81, 82, 8 made of Al.
3... is formed. These electrodes are formed on the single crystal substrate 5 by, for example, a vapor deposition method or a sputtering method.

このように構成された多チヤネル放射線検出器
において、測定すべき放射線は、シヨツトキーバ
リア接合電極81,82,83…側から入射す
る。
In the multichannel radiation detector configured in this way, the radiation to be measured enters from the Schottky barrier junction electrodes 81, 82, 83, . . . .

第5図は、本発明に係る放射線検出器の動作原
理図で、Aはひとつの残留部分(歯の部分)断面
図、BはAに対応する素子内部の電位分布図であ
る。
FIG. 5 is a diagram of the operating principle of the radiation detector according to the present invention, in which A is a sectional view of one remaining portion (tooth portion), and B is a potential distribution diagram inside the element corresponding to A.

CdTe単結晶基板と、電極金属とがシヨツトキ
ーバリア接合を形成すると、第5図Bに示すよう
に電極81側から電位分布が生じ、これによつ
て、残留部の先端付近に幅Weffの空乏層が生じ
る。ここにシヨツトキーバリア接合電極81側か
ら放射線が入射すると、その中でエネルギーを失
い、自由キヤリヤが発生する。N形素子内では電
子が、P形素子では正孔が多数キヤリアとなる。
このキヤリアは、シヨツトキーバリア側の空乏層
eff内で発生したものが、電離電流Iとして外
部に取り出される。この電離電流Iは、入射する
放射線エネルギーをEとすれば(1)式で表わすこと
ができる。
When the CdTe single crystal substrate and the electrode metal form a Schottky barrier junction, a potential distribution occurs from the electrode 81 side as shown in FIG . A depletion layer is created. When radiation enters here from the Schottky barrier junction electrode 81 side, energy is lost within it and free carriers are generated. Electrons serve as majority carriers in the N-type element, and holes serve as majority carriers in the P-type element.
This carrier is generated within the depletion layer W eff on the Schottky barrier side and is taken out as an ionization current I. This ionization current I can be expressed by equation (1), where E is the incident radiation energy.

I=η・A・N・q/εion ・{E・μ/μ(1−e-t I=η・A・N・q/εion ・{E・μ ET (1−e -t

Claims (1)

【特許請求の範囲】 1 連続的に回転できパルスフアンビームを発生
し得る放射線線源と、この線源に対向し線源と一
体となつて回転しかつパルスフアンビームの全幅
にわたり放射線を検出し得る直線状に配列してな
る無指向性固体検出器を具えたことを特徴とする
CTスキヤナ。 2 高原子番号の化合物半導体単結晶を基板と
し、この基板を挾んで一方の側にシヨツトキーバ
リア接合電極を形成するとともに、他方の側にオ
ーミツク接合電極を形成させ、前記シヨツトキー
バリア接合電極側から所定間隔で切り込み部を設
けることによつて櫛形状の複数個の残留部を構成
し、前記シヨツトキーバリア接合電極側から被測
定放射線を入射させるようにした多チヤネル形放
射線検出器を前記無指向性固体検出器として使用
したことを特徴とする特許請求の範囲第1項記載
のCTスキヤナ。
[Claims] 1. A radiation source that can rotate continuously and generate a pulsed fan beam, and that rotates integrally with the radiation source and detects radiation over the entire width of the pulsed fan beam. The invention is characterized by comprising non-directional solid state detectors arranged in a straight line.
CT Sukyana. 2. Using a high atomic number compound semiconductor single crystal as a substrate, sandwiching the substrates and forming a Schottky barrier junction electrode on one side, and forming an ohmic junction electrode on the other side, the Schottky barrier junction is formed. A multichannel radiation detector in which a plurality of comb-shaped residual portions are formed by providing cut portions at predetermined intervals from the electrode side, and radiation to be measured is incident from the shot key barrier junction electrode side. 2. The CT scanner according to claim 1, wherein a CT scanner is used as the non-directional solid state detector.
JP56039943A 1981-03-19 1981-03-19 Ct scanner Granted JPS57154083A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56039943A JPS57154083A (en) 1981-03-19 1981-03-19 Ct scanner

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56039943A JPS57154083A (en) 1981-03-19 1981-03-19 Ct scanner

Publications (2)

Publication Number Publication Date
JPS57154083A JPS57154083A (en) 1982-09-22
JPS628157B2 true JPS628157B2 (en) 1987-02-20

Family

ID=12567031

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56039943A Granted JPS57154083A (en) 1981-03-19 1981-03-19 Ct scanner

Country Status (1)

Country Link
JP (1) JPS57154083A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59109981U (en) * 1983-01-17 1984-07-24 横河電機株式会社 Multi-channel radiation detector
EP0239808B1 (en) * 1986-03-03 1991-02-27 Kabushiki Kaisha Toshiba Radiation detecting device
JPH0734480B2 (en) * 1986-07-07 1995-04-12 株式会社ジャパンエナジー CdTe radiation detection element
DE10217426B4 (en) * 2002-04-18 2006-09-14 Forschungszentrum Jülich GmbH Spatial detector for the measurement of electrically charged particles and use of the detector

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1551253A (en) * 1975-07-10 1979-08-30 Emi Ltd Detection of radiation
JPS603792B2 (en) * 1977-02-04 1985-01-30 株式会社東芝 Multichannel semiconductor radiation detector
JPS53105182A (en) * 1977-02-24 1978-09-13 Toshiba Corp Semiconductor radiant-ray detector

Also Published As

Publication number Publication date
JPS57154083A (en) 1982-09-22

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