JPS62843Y2 - - Google Patents

Info

Publication number
JPS62843Y2
JPS62843Y2 JP1981136317U JP13631781U JPS62843Y2 JP S62843 Y2 JPS62843 Y2 JP S62843Y2 JP 1981136317 U JP1981136317 U JP 1981136317U JP 13631781 U JP13631781 U JP 13631781U JP S62843 Y2 JPS62843 Y2 JP S62843Y2
Authority
JP
Japan
Prior art keywords
polishing
wafer
temperature
temperature measuring
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1981136317U
Other languages
Japanese (ja)
Other versions
JPS5842937U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1981136317U priority Critical patent/JPS5842937U/en
Publication of JPS5842937U publication Critical patent/JPS5842937U/en
Application granted granted Critical
Publication of JPS62843Y2 publication Critical patent/JPS62843Y2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Measuring Temperature Or Quantity Of Heat (AREA)

Description

【考案の詳細な説明】 この考案は半導体ウエハのポリシング装置に関
する。
[Detailed Description of the Invention] This invention relates to a semiconductor wafer polishing apparatus.

半導体ウエハのポリシング加工ではメカノケミ
カル作用をもつポリシング液が用いられている。
ポリシング液の液温により加工能力が大きく左右
される。また、ポリシング中過度に温度上昇した
場合、半導体ウエハをポリシングする定盤や片面
研摩装置の場合では半導体ウエハを保持している
基板に熱変形を起させポリシングの精度を低下さ
せてしまう。したがつて、ポリシング中、直接半
導体ウエハに作用しているポリシング液の正確な
液温を測定する必要があつた。しかし、直接半導
体ウエハに作用しているポリシング液の温度を測
定するにあたつては、片面ポリシング装置では、
回転するウエハ貼付基板と回転するポリシング定
盤との間のポリシング液温度を測らねばならず、
また、両面ポリシング装置では、回転する上下ポ
リシング定盤の間に介在するポリシング液温度を
測らなければならない。このため、ポリシング液
に測温素子を浸すようにとりつけることと、その
検出した温度信号をポリシング装置外にとり出す
方法に工夫が必要である。
Polishing liquids with mechanochemical action are used in polishing semiconductor wafers.
Processing ability is greatly influenced by the temperature of the polishing liquid. Further, if the temperature rises excessively during polishing, in the case of a surface plate or single-sided polishing apparatus for polishing semiconductor wafers, thermal deformation will occur in the substrate holding the semiconductor wafer, reducing polishing accuracy. Therefore, it is necessary to accurately measure the temperature of the polishing liquid that is directly acting on the semiconductor wafer during polishing. However, when measuring the temperature of the polishing liquid that is directly acting on the semiconductor wafer, single-sided polishing equipment requires
It is necessary to measure the temperature of the polishing liquid between the rotating wafer-attached substrate and the rotating polishing surface plate.
In addition, in a double-sided polishing apparatus, it is necessary to measure the temperature of the polishing liquid interposed between the rotating upper and lower polishing plates. Therefore, it is necessary to devise a method for attaching the temperature measuring element so as to immerse it in the polishing liquid and for taking out the detected temperature signal outside the polishing apparatus.

その工夫の一例として、片面ポリシング装置で
は、ウエハ貼付基板に小孔をあけ、そこに、熱電
対をさしこみ固定し熱電対の先端をポリシング液
に浸し、検出した温度信号を、ウエハ貼付基板の
ウエハを貼付けた面と反対側の面上に載置した温
度計にて検出し、読取る方法がある。この方法で
はウエハ貼付基板がポリシング中に回転すると、
温度計も回転するため、読取りに不自由が生じ
る。また、貼付基板上に載置するには、温度計は
大きすぎ、また、温度計の電源として電池をもち
いなくてはならず、重くなるためウエハに対して
偏心荷重が加わつてしまい、ポリシング上望まし
くない。この不都合をなくすために、熱電対から
の出力を、貼付基板の回転軸にとりつけたスリツ
プリングを介して取り出し、これを、電線によつ
て、ポリシング装置外に設置した温度計に導き、
検出・表示する方法も考えられる。この方法で温
度読取りは容易になつたが、回転軸の回りに特別
なスリツプリングの機構を取りつけなければなら
ず、また、スリツプリングは、固定した電導ブラ
シと回転する電導リングとの間のマサツ摺動を、
その機構とするものであるから、マサツ・マモウ
粉が発生し、これが、ポリシング定盤上にとびち
ると、ポリシング中のウエハにキズ、汚れなどを
生ぜしめ、ウエハの品質を劣下させること極めて
大であり、望ましくない。両面ポリシング装置に
おいても、上記片面ポリシング装置におけるウエ
ハ貼付基板を上ポリシング定盤に置きかえると、
同様の工夫、および、その欠点が生じる。
As an example of this innovation, in a single-sided polishing device, a small hole is made in the wafer-attached substrate, a thermocouple is inserted and fixed into the hole, and the tip of the thermocouple is immersed in polishing liquid.The detected temperature signal is transmitted to the wafer-attached substrate. There is a method of detecting and reading the temperature using a thermometer placed on the side opposite to the one on which it is pasted. In this method, if the wafer-attached substrate rotates during polishing,
The thermometer also rotates, making reading difficult. In addition, the thermometer is too large to be placed on the bonding substrate, and a battery must be used as a power source for the thermometer, making it heavy and placing an eccentric load on the wafer. Undesirable. In order to eliminate this inconvenience, the output from the thermocouple is taken out through a slip ring attached to the rotating shaft of the pasting substrate, and is led to a thermometer installed outside the polishing device by an electric wire.
A method of detecting and displaying the information may also be considered. Although this method made it easier to read the temperature, it required a special slip-ring mechanism to be installed around the rotating shaft, and the slip-ring was a stiffener between the stationary conductive brush and the rotating conductive ring. sliding,
Because of this mechanism, powdered powder is generated, and if this powder lands on the polishing surface plate, it will cause scratches and stains on the wafer being polished, which will seriously degrade the quality of the wafer. large and undesirable. Also in a double-sided polishing device, if the wafer-attached substrate in the single-sided polishing device described above is replaced with the upper polishing surface plate,
A similar device and its drawbacks arise.

そこで、この考案は上記の事情に基づいてなさ
れたもので、定回転しているポリシング定盤と、
それによつてポリシングされる半導体ウエハの研
摩領域において、直接、ウエハの研摩に作用して
いるポリシング液の温度を測定し、これを、ワイ
ヤレスにして検出する機構をもつたポリシング装
置を提供するものである。
Therefore, this idea was made based on the above circumstances, and it consists of a polishing surface plate that rotates at a constant
The present invention provides a polishing device having a mechanism for directly measuring the temperature of the polishing liquid acting on the polishing of the wafer in the polishing area of the semiconductor wafer being polished, and wirelessly detecting this temperature. be.

以下、実施例を示す図面を参照してこの考案を
説明する。
This invention will be described below with reference to drawings showing embodiments.

第1図は片面ポリシングを行なう場合に適用し
た実施例で、1は回転定盤、2はこの定盤表面に
貼着されている研摩布、3は半導体ウエハ4…を
接着剤等で保持し、単独回転する保持基板であ
る。上記保持基板3には第2図に示すように等角
度に接着されているウエハ4…の各中心が位置す
る円上に中心を一致した孔5が穿設され、この孔
5にワイヤレス方式になる表面弾性波温度検出子
6が挿入れている。この挿入に際しては、温度検
出子6の先端感温部が保持基板3のウエハ保持面
に一致、もしくは、ウエハ厚さよりも小さい量だ
け突出されている。また、挿入にあたつては、検
出子の外側壁からの温度伝導を防ぐため、第3図
に示す検出子外側壁を断熱材8で被ふくして、孔
5に挿入し、基板に固定する。検出子は発振器内
蔵のものをもちい、信号をおくるためのアンテナ
は、保持基板3の回転軸の回りに環状に取りつけ
る。温度計(図示せず)はポリシング装置外に配
置され、温度計に内蔵する受信器によつて、検出
子からの信号を受信し、温度表示する。
Figure 1 shows an embodiment applied to single-sided polishing, in which 1 is a rotating surface plate, 2 is a polishing cloth stuck to the surface of this surface plate, and 3 is a semiconductor wafer 4, which is held with adhesive or the like. , is a holding board that rotates independently. As shown in FIG. 2, the holding substrate 3 has a hole 5 whose center coincides with a circle where each center of the wafers 4 bonded at equal angles is located. A surface acoustic wave temperature sensor 6 is inserted. During this insertion, the tip temperature sensing portion of the temperature sensor 6 is aligned with the wafer holding surface of the holding substrate 3, or is projected by an amount smaller than the wafer thickness. Furthermore, when inserting the detector, in order to prevent temperature conduction from the outer wall of the detector, the outer wall of the detector shown in FIG. 3 is covered with a heat insulating material 8, and the detector is inserted into the hole 5 and fixed to the substrate. . A detector with a built-in oscillator is used, and an antenna for transmitting a signal is attached annularly around the rotation axis of the holding substrate 3. A thermometer (not shown) is placed outside the polishing device, and a receiver built into the thermometer receives a signal from the detector and displays the temperature.

上記の構成により、温度検出子6は半導体ウエ
ハ4…がポリシング中、自転公転している領域内
に流動するポリシング液7に常に接触し液温を測
定することになり、したがつてポリシング中の加
工温度が正確に知ることができるとともに、ポリ
シング加工温度を正確に制御できるようになつ
た。また、ワイヤレスで温度計測するため、従来
考えられた方法における欠点がなくなつた。
With the above configuration, the temperature sensor 6 always comes into contact with the polishing liquid 7 flowing in the area where the semiconductor wafer 4 is rotating and revolving during polishing, and measures the liquid temperature. In addition to being able to accurately determine the processing temperature, it has also become possible to accurately control the polishing processing temperature. Additionally, because the temperature is measured wirelessly, the drawbacks of conventional methods are eliminated.

第4図は温度測定子6を両面ポリシング装置の
上研摩回転定盤10に埋込だ別の実施例である。
この場合においても、埋込まれる位置は上研摩回
転定盤10と下研摩回転定盤11とに挾まれた状
態で回転するキヤリア12により自転される半導
体ウエハ4…の研摩領域内に流動するポリシング
液を測定する箇所が望ましいが、特に、上研摩定
盤の半径方向幅の中央位置がよい。また温度測定
子6を埋込む場合、第5図または第6図のように
研摩布13まで孔を穿設するかまたは回転定盤の
み穿設するかは適宜選ぶべきことであるが、研摩
布13に孔開けしない第6図の例では温度測定子
6の感温部と研摩布13とを密着させておく必要
がある。このようにすると、研摩布に浸透してき
た研摩液が必ず感温部に接触するので、孔開けし
た場合と、同じ効果がえられる。
FIG. 4 shows another embodiment in which the temperature measuring element 6 is embedded in the upper polishing rotating surface plate 10 of the double-sided polishing device.
In this case as well, the embedding position is the polishing area flowing within the polishing area of the semiconductor wafer 4 which is rotated by the carrier 12 which rotates while being sandwiched between the upper polishing rotary surface plate 10 and the lower polishing rotary surface plate 11. It is desirable to measure the liquid at a location, particularly at the center of the radial width of the upper polishing surface plate. In addition, when embedding the temperature probe 6, it is necessary to choose as appropriate whether to drill a hole up to the abrasive cloth 13 as shown in FIG. 5 or 6, or to drill only the rotary surface plate. In the example shown in FIG. 6 in which no hole is made in the temperature probe 13, it is necessary to keep the temperature sensing part of the temperature probe 6 and the polishing cloth 13 in close contact with each other. In this way, the polishing liquid that has permeated the polishing cloth will definitely come into contact with the temperature sensing part, so the same effect as when holes are made can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの考案の一実施例を示す構成図、第
2図は第1図における温度測定子の取付位置を示
す平面図、第3図は上記第1図の一部拡大断面
図、第4図はこの考案の他の実施例を示す構成
図、第5図および第6図はそれぞれ第3図におけ
る温度測定子の埋め込み状態を示す図である。 4……半導体ウエハ、6……温度測定子、7…
…ポリシング液。
Fig. 1 is a configuration diagram showing an embodiment of this invention, Fig. 2 is a plan view showing the mounting position of the temperature probe in Fig. 1, Fig. 3 is a partially enlarged sectional view of Fig. 1 above, FIG. 4 is a block diagram showing another embodiment of this invention, and FIGS. 5 and 6 are diagrams showing the embedded state of the temperature probe in FIG. 3, respectively. 4...Semiconductor wafer, 6...Temperature measuring element, 7...
...Polishing liquid.

Claims (1)

【実用新案登録請求の範囲】 (1) 回転基板に貼着された研摩布に接しポリシン
グ液を介在されて自転公転しながら研摩される
半導体ウエハの上記自転公転領域内に流動する
ポリシング液に常に検温部が接する位置に設け
られたワイヤレス温度測定子を設けたことを特
徴とする半導体ウエハのポリシング装置。 (2) 温度測定子を、ウエハ接着基板の、等角度に
貼付られたウエハの中心を通る円上の一箇所に
埋込んだことを特徴とする実用新案登録請求の
範囲第1項記載の半導体ウエハのポリシング装
置。 (3) 温度測定子を、上ポリシング定盤の半径方向
の幅の中央位置の一箇所に埋込んだことを特徴
とする実用新案登録請求の範囲第1項記載の半
導体ウエハのポリシング装置。
[Scope of Claim for Utility Model Registration] (1) A semiconductor wafer is polished while rotating and revolving in contact with a polishing cloth attached to a rotating substrate, with the polishing liquid interposed therebetween, and the polishing liquid that flows within the above-mentioned rotational and revolving region. A polishing apparatus for semiconductor wafers, characterized in that a wireless temperature measuring element is provided at a position in contact with a temperature measuring part. (2) The semiconductor according to claim 1 of the utility model registration claim, characterized in that a temperature measuring probe is embedded in a wafer bonded substrate at one location on a circle passing through the center of the wafer attached at equal angles. Wafer polishing equipment. (3) The semiconductor wafer polishing apparatus according to claim 1, wherein a temperature measuring probe is embedded in a central position of the radial width of the upper polishing surface plate.
JP1981136317U 1981-09-16 1981-09-16 Semiconductor wafer polishing equipment Granted JPS5842937U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1981136317U JPS5842937U (en) 1981-09-16 1981-09-16 Semiconductor wafer polishing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1981136317U JPS5842937U (en) 1981-09-16 1981-09-16 Semiconductor wafer polishing equipment

Publications (2)

Publication Number Publication Date
JPS5842937U JPS5842937U (en) 1983-03-23
JPS62843Y2 true JPS62843Y2 (en) 1987-01-09

Family

ID=29929649

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1981136317U Granted JPS5842937U (en) 1981-09-16 1981-09-16 Semiconductor wafer polishing equipment

Country Status (1)

Country Link
JP (1) JPS5842937U (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025074660A (en) * 2023-10-30 2025-05-14 株式会社Sumco Workpiece polishing device and polishing method

Also Published As

Publication number Publication date
JPS5842937U (en) 1983-03-23

Similar Documents

Publication Publication Date Title
TW316248B (en)
US4095453A (en) Differential thermal analysis cell
US5882244A (en) Polishing apparatus
EP0460384B1 (en) End point detector for polishing operations
KR100263786B1 (en) Automatic measuring apparatus
KR980011982A (en) Device and method for semiconductor wafer leveling detection of CMP apparatus
JP2007510164A (en) Polishing end point detection system and method using friction sensor
CN102278967A (en) Thickness measuring device and method of polishing solution and chemically mechanical polishing equipment
CN205237796U (en) Chemical mechanical grinding device
CN102893377A (en) Pad window insert
US7258595B2 (en) Polishing apparatus
CN119681782B (en) Metal film thickness online measurement compensation method, film thickness sensor and equipment
TW406343B (en) Method and device for measuring temperature, etc., of machined surface of hard base and hard base for measurement
TWI719056B (en) Grinding device
GB2128739A (en) Ultrasonic inspection devices
JPS5849812B2 (en) Manufacturing method of temperature sensor
JPS6177728A (en) Thermopile type infrared detection element
JPS60201868A (en) Wafer mechanochemical polishing method and device
JPH09218102A (en) Temperature detecting device
JPS6124906Y2 (en)
JPS5990116A (en) Temperature controller
JPS5842937U (en) Semiconductor wafer polishing equipment
JPH08227771A (en) Socket for semiconductor device
JPH09148281A (en) Polishing apparatus and polishing method
CN222021381U (en) Eddy current sensor probe and chemical mechanical polishing equipment