JPS6285014U - - Google Patents

Description

[Brief explanation of the drawing]

FIG. 1 is a block diagram of a semiconductor amplifier showing an embodiment of the present invention, FIG. 2 is a block diagram of the structure of FIG. 1, FIG. 3 is a characteristic diagram showing the current-voltage characteristics of the semiconductor amplifier, and FIG. FIG. 1 is a configuration block diagram of a conventional semiconductor amplifier. 1a...second field effect transistor, 1b
...First field effect transistor, 4...Input terminal, 5...Output terminal, 6a, 6b...Gate bias circuit, 7a, 7b...Drain bias circuit, 10...Distributor, 11...Fixed Phaser, 14
...3-branch line (composite circuit). Note that the same reference numerals in the figures indicate the same or corresponding parts.

Claims (1)

[Scope of utility model registration request] A divider that equally distributes the microwave input from the input terminal, a first field-effect transistor input to the microwave input side that is equally distributed by the divider, and a first field effect transistor that equally distributes the microwave input by the divider. a fixed phase shifter that inverts the phase of the microwave that has been inverted by 180 degrees; a second field-effect transistor that inputs to the input side the microwave whose phase has been inverted by 180 degrees by the fixed phase shifter; A bias circuit that supplies a bias voltage to the first and second field effect transistors and amplified microwaves output from the output sides of the first and second field effect transistors that are in opposite phases to each other are synthesized. A semiconductor amplifier characterized in that it is equipped with a synthesis circuit.