JPS628632U - - Google Patents
Info
- Publication number
- JPS628632U JPS628632U JP10031985U JP10031985U JPS628632U JP S628632 U JPS628632 U JP S628632U JP 10031985 U JP10031985 U JP 10031985U JP 10031985 U JP10031985 U JP 10031985U JP S628632 U JPS628632 U JP S628632U
- Authority
- JP
- Japan
- Prior art keywords
- reactant gas
- dome
- heat treatment
- vertical semiconductor
- semiconductor heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gas Substances 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000012495 reaction gas Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000006185 dispersion Substances 0.000 claims description 6
- 239000000376 reactant Substances 0.000 claims 7
- 239000000428 dust Substances 0.000 claims 1
Description
第１図は、この考案の一実施例に係る縦形半導
体熱処理装置の反応ガス分散ドームの概略正面図
、第２図は、第１図に示す反応ガス分散ドームの
部分断面図、第３図および第４図は、この考案の
他実施例に係る縦形半導体熱処理装置の反応ガス
分散ドームの概略正面図および平面図である。
１０，１１０：縦形半導体熱処理装置の反応ガ
ス分散ドーム、１１：反応ガス分散ドームの脚、
１２：反応管、１４：反応管の底部、１８：反応
ガスの導管、２０，１２０：オリフイス、１１３
：反応ガス分散ドームの上面、１１５：反応ガス
分散ドームの傾斜面。
FIG. 1 is a schematic front view of a reactive gas dispersion dome of a vertical semiconductor heat treatment apparatus according to an embodiment of the invention, FIG. 2 is a partial sectional view of the reactive gas dispersion dome shown in FIG. 1, and FIGS. FIG. 4 is a schematic front view and a plan view of a reactive gas distribution dome of a vertical semiconductor heat treatment apparatus according to another embodiment of the invention. 10, 110: Reaction gas distribution dome of vertical semiconductor heat treatment equipment, 11: Legs of reaction gas distribution dome,
12: Reaction tube, 14: Bottom of reaction tube, 18: Reaction gas conduit, 20, 120: Orifice, 113
: Upper surface of the reaction gas distribution dome, 115: Inclined surface of the reaction gas distribution dome.
Claims (1)
半導体熱処理装置の反応ガス分散ドームにおいて
、反応ガス分散ドームが、多数のオリフイスを有
する中空体に形成されるとともに、反応ガスの導
管先端が反応ガス分散ドームに連通されて、反応
ガスが、反応管の底部に堆積する塵芥を舞上げる
ことなく、オリフイスから噴出されることを特徴
とする縦形半導体熱処理装置の反応ガス分散ドー
ム。 (2) オリフイスは、噴出される反応ガスが側壁
に衝突後、上方に向うように、反応管の側壁に対
して、その中心線が傾斜している、実用新案登録
請求の範囲第１項記載の縦形半導体熱処理装置の
反応ガス分散ドーム。 (3) オリフイスは、噴出される反応ガスが、直
ちに上方に向かように、反応管の側壁とほぼ平行
な中心線を有している、実用新案登録請求の範囲
第１項または第２項記載の縦形半導体熱処理装置
の反応ガス分散ドーム。[Claims for Utility Model Registration] (1) In a reactant gas dispersion dome of a vertical semiconductor heat treatment device that disperses a flow of reactant gas in a reaction tube, the reactant gas dispersion dome is formed in a hollow body having a large number of orifices, and , a vertical semiconductor heat treatment apparatus characterized in that the tip of a reactant gas conduit is communicated with a reactant gas dispersion dome, and the reactant gas is ejected from an orifice without raising dust deposited at the bottom of the reaction tube. Gas distribution dome. (2) The center line of the orifice is inclined with respect to the side wall of the reaction tube so that the ejected reaction gas is directed upward after colliding with the side wall, as stated in Claim 1 of the Utility Model Registration Claim. Reactant gas dispersion dome for vertical semiconductor heat treatment equipment. (3) The orifice has a center line that is approximately parallel to the side wall of the reaction tube so that the ejected reaction gas immediately heads upwards, as claimed in Claim 1 or 2 of the Utility Model Registration Claim. A reactive gas distribution dome of the vertical semiconductor heat treatment apparatus described above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10031985U JPS628632U (en) | 1985-07-01 | 1985-07-01 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10031985U JPS628632U (en) | 1985-07-01 | 1985-07-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS628632U true JPS628632U (en) | 1987-01-19 |
Family
ID=30970031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10031985U Pending JPS628632U (en) | 1985-07-01 | 1985-07-01 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS628632U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58154226A (en) * | 1982-03-10 | 1983-09-13 | Fuji Xerox Co Ltd | Plasma cvd apparatus |
-
1985
- 1985-07-01 JP JP10031985U patent/JPS628632U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58154226A (en) * | 1982-03-10 | 1983-09-13 | Fuji Xerox Co Ltd | Plasma cvd apparatus |
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