JPS628657U - - Google Patents
Info
- Publication number
- JPS628657U JPS628657U JP7401986U JP7401986U JPS628657U JP S628657 U JPS628657 U JP S628657U JP 7401986 U JP7401986 U JP 7401986U JP 7401986 U JP7401986 U JP 7401986U JP S628657 U JPS628657 U JP S628657U
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- covered
- insulating film
- emitting device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 238000001962 electrophoresis Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 238000007796 conventional method Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Description
第１図は従来の方法で作られたＧａＰ発光ダイ
オードチツプ途中工程の断面図、第２図は従来の
方法で作られたＧａＰ発光ダイオードチツプの斜
視図、第３図ａ，ｂは本考案の一実施例であるＧ
ａＰ発光ダイオードの製造方法を工程順に示す断
面図、図ｃは発光ダイオードチツプの斜視図であ
る。
１…高不純物濃度ｎ型ＧａＰ単結晶基板、２…
ｎ型ＧａＰエピタキシアル成長層、３…Ｐ型Ｇａ
Ｐエピタキシアル成長層、４…ｐ―ｎ接合、５…
Ｐ型非整流性接触電極、６…ｎ型非整流性接触電
極、７…シリコン酸化膜、８…溝、９…低融点ガ
ラス被着層。
Fig. 1 is a cross-sectional view of a GaP light emitting diode chip made by a conventional method, and Fig. 2 is a perspective view of a GaP light emitting diode chip made by a conventional method. An example of G
FIG. 3 is a cross-sectional view showing the manufacturing method of an aP light emitting diode in the order of steps, and FIG. 3C is a perspective view of a light emitting diode chip. 1...High impurity concentration n-type GaP single crystal substrate, 2...
n-type GaP epitaxial growth layer, 3...P-type Ga
P epitaxial growth layer, 4... pn junction, 5...
P-type non-rectifying contact electrode, 6... N-type non-rectifying contact electrode, 7... Silicon oxide film, 8... Groove, 9... Low melting point glass adhesion layer.
Claims (1)
、電気泳動法を用いて選択的に被着されたガラス
微粒を熱処理して得る透明な絶縁性被膜で被覆さ
れていることを特徴とする半導体発光装置。 A semiconductor characterized in that p-n junction lines exposed on the side surfaces of a semiconductor chip are covered with a transparent insulating film obtained by heat-treating glass particles selectively deposited using an electrophoresis method. Light emitting device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7401986U JPS628657U (en) | 1986-05-16 | 1986-05-16 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7401986U JPS628657U (en) | 1986-05-16 | 1986-05-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS628657U true JPS628657U (en) | 1987-01-19 |
Family
ID=30918857
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7401986U Pending JPS628657U (en) | 1986-05-16 | 1986-05-16 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS628657U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5011383A (en) * | 1973-05-30 | 1975-02-05 | ||
| JPS5279775A (en) * | 1975-12-26 | 1977-07-05 | Toshiba Corp | Semiconductor device |
-
1986
- 1986-05-16 JP JP7401986U patent/JPS628657U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5011383A (en) * | 1973-05-30 | 1975-02-05 | ||
| JPS5279775A (en) * | 1975-12-26 | 1977-07-05 | Toshiba Corp | Semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0770476B2 (en) | Method for manufacturing semiconductor device | |
| KR870004522A (en) | Semiconductor rectifier and method of manufacturing the same | |
| JPS6489365A (en) | Semiconductor device | |
| JPS628657U (en) | ||
| JPS6411556U (en) | ||
| JPS6451658A (en) | Semiconductor device | |
| JPS55162223A (en) | Semiconductor device and its preparation | |
| JPS61216464A (en) | Monolithic integrated element of photodiode and transistor | |
| JPH02146460U (en) | ||
| JPS6268252U (en) | ||
| JPH0518470B2 (en) | ||
| JPS55102263A (en) | Semiconductor integrated circuit | |
| JPS5926267U (en) | semiconductor equipment | |
| JPS62145348U (en) | ||
| JPS6113955U (en) | Zener diode incorporated into integrated circuit | |
| JPS60181059U (en) | semiconductor equipment | |
| JPS6274350U (en) | ||
| JPS5941387U (en) | Electrode extraction structure of light emitting element | |
| JPH02125335U (en) | ||
| JPS56115546A (en) | Semiconductor device | |
| JPS62193756U (en) | ||
| JPS6038035B2 (en) | Light emitting device manufacturing method | |
| JPS6397251U (en) | ||
| JPS6343455U (en) | ||
| JPS6161849U (en) |