JPS628657U - - Google Patents

Info

Publication number
JPS628657U
JPS628657U JP7401986U JP7401986U JPS628657U JP S628657 U JPS628657 U JP S628657U JP 7401986 U JP7401986 U JP 7401986U JP 7401986 U JP7401986 U JP 7401986U JP S628657 U JPS628657 U JP S628657U
Authority
JP
Japan
Prior art keywords
light emitting
covered
insulating film
emitting device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7401986U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7401986U priority Critical patent/JPS628657U/ja
Publication of JPS628657U publication Critical patent/JPS628657U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)

Description

【図面の簡単な説明】
第１図は従来の方法で作られたＧａＰ発光ダイ
オードチツプ途中工程の断面図、第２図は従来の
方法で作られたＧａＰ発光ダイオードチツプの斜
視図、第３図ａ，ｂは本考案の一実施例であるＧ
ａＰ発光ダイオードの製造方法を工程順に示す断
面図、図ｃは発光ダイオードチツプの斜視図であ
る。 １…高不純物濃度ｎ型ＧａＰ単結晶基板、２…
ｎ型ＧａＰエピタキシアル成長層、３…Ｐ型Ｇａ
Ｐエピタキシアル成長層、４…ｐ―ｎ接合、５…
Ｐ型非整流性接触電極、６…ｎ型非整流性接触電
極、７…シリコン酸化膜、８…溝、９…低融点ガ
ラス被着層。

Claims (1)

    【実用新案登録請求の範囲】
  1. 半導体チツプの側面に露出するｐ―ｎ接合線が
    、電気泳動法を用いて選択的に被着されたガラス
    微粒を熱処理して得る透明な絶縁性被膜で被覆さ
    れていることを特徴とする半導体発光装置。
JP7401986U 1986-05-16 1986-05-16 Pending JPS628657U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7401986U JPS628657U (ja) 1986-05-16 1986-05-16

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7401986U JPS628657U (ja) 1986-05-16 1986-05-16

Publications (1)

Publication Number Publication Date
JPS628657U true JPS628657U (ja) 1987-01-19

Family

ID=30918857

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7401986U Pending JPS628657U (ja) 1986-05-16 1986-05-16

Country Status (1)

Country Link
JP (1) JPS628657U (ja)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5011383A (ja) * 1973-05-30 1975-02-05
JPS5279775A (en) * 1975-12-26 1977-07-05 Toshiba Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5011383A (ja) * 1973-05-30 1975-02-05
JPS5279775A (en) * 1975-12-26 1977-07-05 Toshiba Corp Semiconductor device

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