JPS6286728A - Semiconductor manufacturing device - Google Patents

Abstract

PURPOSE:To make the etching process with high precision feasible while preventing any materials stuck on sidewalls from re-sticking on a wafer by a method wherein chamber sidewalls are constituted to be replaced with new ones for removing the materials stuck thereon. CONSTITUTION:When a normal etching process is performed in a chamber 1 composed of chamber main body walls 1a coupled with chamber sidewalls 2-1 and then a turning device 31 is turned to replace the chamber sidewalls 2-1 with the other chamber sidewalls 2-2, the used chamber sidewalls 2-1 are entered in a cleaning chamber 41. The used chamber sidewalls 2-1 are cleaned up with brush 41a etc. by the end of etching process using the other chamber sidewalls 2-2. Thus each used chamber sidewalls 2-1 can be replaced alternately with the other unused chamber sidewalls 2-2 during the etching process to re move any materials stuck on the used sidewalls 2-1 for preventing the stuck materials from re-sticking on a wafer. Through these procedures, etching effi ciency with high precision can be improved contributing to the prevention of pollution and damage to device.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to semiconductor manufacturing equipment such as a reactive ion etching equipment that performs etching with gas or ions in a chamber. The present invention relates to a reactive ion etching apparatus that removes deposited materials and reduces re-deposition from the sidewalls of the materials to the wafer.

[Conventional technology]

Conventionally, reactive ion etching apparatuses have been of the narrow electrode type, in which a pair of electrodes 3 are disposed in a chamber 1 facing each other, as shown in FIG. 2, as shown in FIG. 2, and as shown in FIG. As shown in the figure, there is a three-electrode type structure in which two electrodes 3 are arranged facing each other in a spaced manner in a chamber 1, and a floating electrode 6 is interposed between the electrodes 3, and these accelerate the plasma flow generated in the chamber 1. It has a structure that speeds up the etching speed. In addition, in Figures 2 and 3, 2
4 is a wafer supported on one side of the electrodes 3 facing each other, and 5 is a power source that supplies a predetermined power between these electrodes 3.

By the way, in the conventional structure shown in FIGS. 2 and 3,
By shortening the distance between the electrodes 3, the floating electrode 6 allows the plasma flow to hit the wafer 4 perpendicularly, and the plasma is accelerated at the same time. Therefore, the linearity and energy of the plasma flow are increased, resulting in higher precision and finer etching shapes and improved etching speed.

[Problem that the invention seeks to solve]

However, in the conventional reactive ion etching apparatus described above, a large amount of etched material is generated, and
As a result, there were problems in that it polymerized in the plasma flow and re-adhered to the wafer, lowering the etching rate, and also adhered to the side walls of the chamber, causing contamination.

This invention was made to solve the above-mentioned problems, and it is possible to improve the etching rate when performing etching with gas or ions in a chamber, and to reduce contamination by the material to be etched. The purpose is to provide semiconductor manufacturing equipment.

[Means for solving problems]

The semiconductor manufacturing apparatus according to the present invention is a semi-fluid manufacturing apparatus such as a reactive ion etching apparatus that performs etching with gas or ions in a chamber, and has a structure in which the main body wall of the chamber and the chamber side wall are separated, and the side wall surface a side wall configured to be replaceable with respect to the chamber main wall, a drive device for driving the side wall to replace the side wall surface, and a side wall surface of the side wall replaced by the drive device. It is equipped with a cleaning device for cleaning.

[Effect]

In this invention, by providing a function of replacing the side wall surface of the chamber side wall with respect to the main body wall of the chamber and cleaning that side wall surface, the contaminated chamber side wall can be cleaned, and the side wall can be reused from the side wall to the wafer during operation. In addition to preventing adhesion, polymer molecules in the plasma can be easily adsorbed. This removes polymerized molecules, prevents a decrease in etching rate, and contributes to higher precision.

〔Example〕

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 3 is a conceptual diagram showing a reactive ion etching apparatus according to an embodiment of the present invention, and here the case is shown in which the apparatus has two side walls. FIG. 2 shows the reactive ion etching apparatus of this embodiment as described above.

The difference from the conventional one shown in FIG.
A side wall portion 21 configured to allow the chamber side walls 2-1 and 2-2 to be replaced is provided as a movable side wall. By rotating these two chamber side walls 2-1 and 2-2 with a rotating device 31 such as a motor and replacing them, the replaced chamber side 2-1 or 2-2 can be used as a cleaning plan 41 & etc. The cleaning device 41 is configured to perform cleaning using a cleaning device 41 consisting of 300 ml of water.

According to the reactive ion etching apparatus constructed in this way, after a normal etching process is performed in the chamber 1 in which one chamber side wall 2-s is connected to the chamber main body wall 1a, rotation is performed. When the device 31 is rotated and the other chamber side wall 2-2 is replaced, the used chamber side wall 2-1 enters the cleaning device 41. Then, before the etching process using the chamber side wall 2-2 is completed, the used chamber side wall 2-1 is cleaned with a plan 41a or the like. In this way, by alternately replacing one used chamber side wall with another unused (including after cleaning) chamber side wall for each etching process, it is possible to eliminate the adhesion to the chamber side wall during etching. Since the substance can be removed, re-adhesion from the chamber side wall to the wafer can be reduced. This can contribute to improving the etching rate, preventing contamination, increasing precision, and preventing device damage.

In addition, although the above embodiment shows the case where the chamber has two side walls, the same applies to the case where the chamber has three or more side walls, or the case where the side wall has an area more than twice the cross-sectional area of the chamber. . Furthermore, although the above embodiments have been described with respect to a reactive ion etching apparatus, it is of course applicable to any plasma etching apparatus that performs etching using gas or ions in a chamber.

〔Effect of the invention〕

As described above, according to the present invention, by configuring the chamber side wall to be replaced and cleaned, substances attached to the chamber side wall during etching can be removed. Adhesion can be reduced. This makes it possible to perform etching with higher precision than with conventional apparatuses, and has the effect of preventing contamination, increasing precision, and preventing damage to devices.

[Brief explanation of drawings]

Fig. 1 is a conceptual diagram of a reactive ion etching apparatus according to an embodiment of the present invention, Fig. 2 is a schematic diagram of a conventional narrow electrode reactive ion etching apparatus, and Fig. 3 is a schematic diagram of a conventional narrow electrode reactive ion etching apparatus. A schematic diagram of an ion etching apparatus.0 1...Chamber, 1a...Chamber body wall, 2-1.
・・Side wall part, 31・・Rotating device, 41・・Sounding/cleaning device, 41m・・・Cleaning Bran O

Claims (2)

[Claims] (1) In semiconductor manufacturing equipment such as a reactive ion etching equipment that performs etching with gas or ions in a chamber, the main body wall of the chamber and the chamber side wall are separated, and the side wall surface is replaced with the chamber main wall. a driving device for driving the side wall to replace the side wall surface; a cleaning device for cleaning the side wall surface of the side wall replaced by the driving device; A semiconductor manufacturing device characterized by comprising: (2) The semiconductor manufacturing apparatus according to claim 1, wherein the side wall portion has a side wall structure having two or more chamber side walls or an area twice or more the cross-sectional area of the chamber.