JPS6287499A - 単結晶ＣｄＴｅの熱処理方法 - Google Patents

単結晶ＣｄＴｅの熱処理方法

Info

Publication number
JPS6287499A
JPS6287499A JP22820385A JP22820385A JPS6287499A JP S6287499 A JPS6287499 A JP S6287499A JP 22820385 A JP22820385 A JP 22820385A JP 22820385 A JP22820385 A JP 22820385A JP S6287499 A JPS6287499 A JP S6287499A
Authority
JP
Japan
Prior art keywords
single crystal
heat treatment
cdte
vapor
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22820385A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0455156B2 (es
Inventor
Osamu Oda
修 小田
Arata Onozuka
小野塚　新
Kazuto Hirata
和人 平田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eneos Corp
Original Assignee
Nippon Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining Co Ltd filed Critical Nippon Mining Co Ltd
Priority to JP22820385A priority Critical patent/JPS6287499A/ja
Publication of JPS6287499A publication Critical patent/JPS6287499A/ja
Publication of JPH0455156B2 publication Critical patent/JPH0455156B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP22820385A 1985-10-14 1985-10-14 単結晶ＣｄＴｅの熱処理方法 Granted JPS6287499A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22820385A JPS6287499A (ja) 1985-10-14 1985-10-14 単結晶ＣｄＴｅの熱処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22820385A JPS6287499A (ja) 1985-10-14 1985-10-14 単結晶ＣｄＴｅの熱処理方法

Publications (2)

Publication Number Publication Date
JPS6287499A true JPS6287499A (ja) 1987-04-21
JPH0455156B2 JPH0455156B2 (es) 1992-09-02

Family

ID=16872811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22820385A Granted JPS6287499A (ja) 1985-10-14 1985-10-14 単結晶ＣｄＴｅの熱処理方法

Country Status (1)

Country Link
JP (1) JPS6287499A (es)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100379902C (zh) * 2006-08-16 2008-04-09 中国科学技术大学 碲化镉单晶的低温溶剂热生长方法
JP2008100900A (ja) * 2006-09-07 2008-05-01 Commiss Energ Atom アニールによるｉｉ−ｉｖ族の半導体材料中の沈殿物を除去するための方法
JP2017007900A (ja) * 2015-06-23 2017-01-12 Ｊｘ金属株式会社 ＣｄＴｅ系化合物半導体単結晶及びその製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100379902C (zh) * 2006-08-16 2008-04-09 中国科学技术大学 碲化镉单晶的低温溶剂热生长方法
JP2008100900A (ja) * 2006-09-07 2008-05-01 Commiss Energ Atom アニールによるｉｉ−ｉｖ族の半導体材料中の沈殿物を除去するための方法
US8021482B2 (en) * 2006-09-07 2011-09-20 Commissariat A L'energie Atomique Method for eliminating the precipitates in a II-IV semiconductor material by annealing
JP2017007900A (ja) * 2015-06-23 2017-01-12 Ｊｘ金属株式会社 ＣｄＴｅ系化合物半導体単結晶及びその製造方法

Also Published As

Publication number Publication date
JPH0455156B2 (es) 1992-09-02

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