JPS629233B2 - - Google Patents
Info
- Publication number
- JPS629233B2 JPS629233B2 JP57000626A JP62682A JPS629233B2 JP S629233 B2 JPS629233 B2 JP S629233B2 JP 57000626 A JP57000626 A JP 57000626A JP 62682 A JP62682 A JP 62682A JP S629233 B2 JPS629233 B2 JP S629233B2
- Authority
- JP
- Japan
- Prior art keywords
- powder
- cds
- film
- sintered film
- cdte
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
Landscapes
- Photovoltaic Devices (AREA)
Description
本発明はｎ形CdSとｐ形CdTeとのpn接合を用
いた光起電力素子の製造方法に関するものであ
る。
従来、この種の素子の製造方法として、支持基
板上に形成された低抵抗で光透過率の良好なｎ形
CdS焼結膜上に、Cd粉末とTe粉末に粘結剤を加
えて混合し、泥状にしたものをスクリーン印し、
乾燥した後、窒素雰囲気中で焼成してCdTe焼結
膜を形成するものがあつた。そしてこの方法にお
いては、CdTe焼結膜がCd粉末とTe粉末から比
較的低い温度で直接製造することができるため、
印刷するための必要上から粘結剤を添加するにと
どめ、融剤を添加することはなかつた。すなわち
融剤を含まないCd粉末とTe粉末の混合泥状物か
らもそれなりのCdTe焼結膜を形成することが可
能であつた。
本発明は、上記泥状物に関して発明者らが種々
の検討を重ねた結果、この泥状物のCdCl2を融剤
として添加することにより、素子の性能が向上す
ることを見い出したことに基いて成されたもので
ある。
以下、本発明の製造方法について、実施例をあ
げて具体的に説明する。
（実施例）
CdS粉末に融剤としてCdCl2を10重量％加え、
それに粘結剤としてプロピレングリコールを加え
て泥状にしたものを、図面に示すようにガラス基
板１上にスクリーン印刷した後、N2雰囲気中に
おいて690℃で20分間焼成することにより、化学
量論比よりCd過剰のｎ形CdS焼結膜２を形成し
た。このようにして得られたｎ形CdS膜の抵抗率
は100〜101Ω・cm程度であつた。次に、このｎ形
CdS焼結膜２上に、Cd粉末とTe粉末をモル比で
１：１に配合し次表に示すような添加量CdCl2
と、適量の粘結剤としてのプロピレングリコール
を加えて混合し、泥状にしたものをスクリーン印
刷し乾燥させた後、N2雰囲気中において、650℃
で30分間焼成することによつてCdTe焼結膜３を
形成した。次にCdTe焼結膜３上に微量のアクセ
プター不純物を添加した泥状カーボンをスクリー
ン印刷して、カーボン膜４を形成させた後、N2
雰囲気中において350℃で30分間熱処理すること
によりカーボン中に含まれているアクセプタ不純
物がCdTe焼結膜３内にドープした。こうしてｎ
形CdS焼結膜２とｐ形CdTe焼結膜３との間に光
起電力効果をもつヘテロ接合を形成した。次に
CdS焼結膜２上およびカーボン膜４上にそれぞれ
オーミツク電極５，６を付けた後、各々電極５，
６からリード線７を引き出した。入射光８はCdS
焼結膜２側から照射する。このようにして得られ
た素子の80mW／cm2のタングステンハロゲン灯光
下での真性変換効率を次表に示す。
The present invention relates to a method for manufacturing a photovoltaic device using a pn junction between n-type CdS and p-type CdTe. Conventionally, as a manufacturing method for this type of device, an n-type device with low resistance and good light transmittance formed on a support substrate has been used.
On the CdS sintered film, Cd powder and Te powder are mixed with a binder and made into a slurry, which is then screen stamped.
After drying, some were fired in a nitrogen atmosphere to form a CdTe sintered film. In this method, the CdTe sintered film can be directly produced from Cd powder and Te powder at a relatively low temperature.
Due to the necessity for printing, only a binder was added, and no fluxing agent was added. In other words, it was possible to form a suitable CdTe sintered film even from a mixed slurry of Cd powder and Te powder that did not contain a flux. The present invention is based on the fact that, as a result of various studies conducted by the inventors regarding the above-mentioned slurry, the inventors discovered that the performance of the device is improved by adding CdCl 2 of this slurry as a fluxing agent. It was made by Hereinafter, the manufacturing method of the present invention will be specifically explained with reference to Examples. (Example) Add 10% by weight of CdCl 2 as a flux to CdS powder,
Propylene glycol was added as a binder to make a slurry, which was then screen printed on the glass substrate 1 as shown in the drawing, and then baked at 690°C for 20 minutes in an N2 atmosphere to achieve stoichiometry. An n-type CdS sintered film 2 containing excess Cd was formed. The resistivity of the n-type CdS film thus obtained was about 10 0 to 10 1 Ω·cm. Next, this n-type
Cd powder and Te powder were mixed in a molar ratio of 1:1 on the CdS sintered film 2, and the amount of CdCl 2 added was as shown in the following table.
was mixed with an appropriate amount of propylene glycol as a binder, the resulting slurry was screen printed, dried, and then heated at 650°C in an N2 atmosphere.
The CdTe sintered film 3 was formed by firing for 30 minutes. Next, muddy carbon containing a small amount of acceptor impurities is screen printed on the CdTe sintered film 3 to form a carbon film 4, and then N 2
The acceptor impurities contained in the carbon were doped into the CdTe sintered film 3 by heat treatment at 350° C. for 30 minutes in an atmosphere. Thus n
A heterojunction with a photovoltaic effect was formed between the CdS type sintered film 2 and the p-type CdTe sintered film 3. next
After attaching ohmic electrodes 5 and 6 on the CdS sintered film 2 and the carbon film 4, respectively,
Lead wire 7 was pulled out from 6. Incident light 8 is CdS
Irradiation is performed from the sintered film 2 side. The intrinsic conversion efficiency of the thus obtained device under 80 mW/cm 2 tungsten halogen lamp light is shown in the following table.
【表】【table】
【表】
表によれば融剤添加の効果は明らかであり、特
に添加量が0.3〜1.5％の範囲で効果が大きいこと
がわかる。
以上説明から明らかなように、本発明の方法に
よれば、高変換効率の光起電力素子を得ることが
できるため、その実用上の価値は大なるものがあ
る。[Table] According to the table, the effect of adding a flux is clear, and the effect is particularly large when the amount added is in the range of 0.3 to 1.5%. As is clear from the above description, according to the method of the present invention, a photovoltaic element with high conversion efficiency can be obtained, and therefore has great practical value.
図面は本発明の製造方法により得られる光起電
力素子の一例を示す断面図である。
１……ガラス基板、２……CdS焼結膜、３……
CdTe焼結膜、４……カーボン膜、５……オーミ
ツク電極、６……オーミツク電極、７……リード
線。
The drawing is a sectional view showing an example of a photovoltaic device obtained by the manufacturing method of the present invention. 1...Glass substrate, 2...CdS sintered film, 3...
CdTe sintered film, 4...carbon film, 5...ohmic electrode, 6...ohmic electrode, 7...lead wire.
Claims (1)
半導体の焼結膜を形成し、さらにその上にCd粉
末とTe粉末に粘結剤を加えて混合した泥状物を
スクリーン印刷し、これを不活性雰囲気中におい
て焼成してCdTe焼結膜を形成し、しかる後、前
記２つの焼結膜に電極を形成して光起電力素子を
製造するに際し、前記Cd粉末、Te粉末および粘
結剤よりなる泥状物にCdCl2を添加することを特
徴とする光起電力素子の製造方法。 ２ CdCl2の添加量がCd粉末とTe粉末重量の合
計量の0.3〜1.5％であることを特徴とする特許請
求の範囲第１項記載の光起電力素子の製造方法。[Claims] 1. A sintered film of CdS or a compound semiconductor containing CdS is formed on a support substrate, and a slurry made by adding a binder to Cd powder and Te powder is screen printed on the film. This is fired in an inert atmosphere to form a CdTe sintered film, and then electrodes are formed on the two sintered films to produce a photovoltaic device. 1. A method for producing a photovoltaic device, which comprises adding CdCl 2 to a slurry made of an agent. 2. The method of manufacturing a photovoltaic device according to claim 1, wherein the amount of CdCl 2 added is 0.3 to 1.5% of the total weight of Cd powder and Te powder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57000626A JPS58118167A (en) | 1982-01-07 | 1982-01-07 | Method for manufacturing photovoltaic elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57000626A JPS58118167A (en) | 1982-01-07 | 1982-01-07 | Method for manufacturing photovoltaic elements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58118167A JPS58118167A (en) | 1983-07-14 |
| JPS629233B2 true JPS629233B2 (en) | 1987-02-27 |
Family
ID=11478931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57000626A Granted JPS58118167A (en) | 1982-01-07 | 1982-01-07 | Method for manufacturing photovoltaic elements |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58118167A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01189969A (en) * | 1988-01-26 | 1989-07-31 | Sumitomo Metal Ind Ltd | Photovoltaic element and manufacture thereof |
-
1982
- 1982-01-07 JP JP57000626A patent/JPS58118167A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58118167A (en) | 1983-07-14 |
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