JPS63102757U - - Google Patents

Info

Publication number
JPS63102757U
JPS63102757U JP19514786U JP19514786U JPS63102757U JP S63102757 U JPS63102757 U JP S63102757U JP 19514786 U JP19514786 U JP 19514786U JP 19514786 U JP19514786 U JP 19514786U JP S63102757 U JPS63102757 U JP S63102757U
Authority
JP
Japan
Prior art keywords
current
pvd
thyristor
flash
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19514786U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP19514786U priority Critical patent/JPS63102757U/ja
Publication of JPS63102757U publication Critical patent/JPS63102757U/ja
Pending legal-status Critical Current

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Landscapes

  • Physical Vapour Deposition (AREA)
  • Power Conversion In General (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの考案の一実施例の構成を示す回路
図、第2図はPVD装置のバイアス回路の既提案
例を示す回路図、第3図は第1図および第2図の
各部の波形図である。 1……交流電源、2……限流インピーダンス素
子、3……全波整流器、3E,3F……サイリス
タ、4……クローバサイリスタ、6……PVD装
置、6A,6B……バイアス電圧端子、7……塞
流インピーダンス素子、8……主点弧回路、11
……副点弧回路、12……リアクトル、13……
抵抗器、14……ダンパ用ダイオード。
Figure 1 is a circuit diagram showing the configuration of an embodiment of this invention, Figure 2 is a circuit diagram showing an already proposed example of a bias circuit for a PVD device, and Figure 3 is a waveform of each part in Figures 1 and 2. It is a diagram. 1... AC power supply, 2... Current limiting impedance element, 3... Full wave rectifier, 3E, 3F... Thyristor, 4... Clover thyristor, 6... PVD device, 6A, 6B... Bias voltage terminal, 7 ... Obstruction impedance element, 8 ... Main ignition circuit, 11
... Sub-ignition circuit, 12 ... Reactor, 13 ...
Resistor, 14...Damper diode.

Claims (1)

【実用新案登録請求の範囲】 交流電源にランプからなる限流インピーダンス
素子および少なくとも隣接する2辺の構成要素を
サイリスタとしたブリツジ型の全波整流器を直列
に介してクローバサイリスタを接続し、このクロ
ーバサイリスタの両端を寒流インピーダンス素子
を介してPVD装置の一対のバイアス電圧端子に
接続し、前記PVD装置の電極間閃絡を検出して
前記クローバサイリスタにパルス状の点弧電流を
加える主点弧回路を設けるとともに、前記PVD
装置の電極間閃絡を検出して前記サイリスタへの
点弧電流の供給を遮断し前記PVD装置の電極間
閃絡の回復後復旧させる副点弧回路を設けたPV
D装置のバイアス回路において、 前記限流インピーダンス素子と並列にリアクト
ルおよび抵抗器の直列回路を接続し、前記リアク
トルと並列にダンパ用ダイオードを接続したこと
を特徴とするPVD装置のバイアス回路。
[Claims for Utility Model Registration] A crowbar thyristor is connected in series to an AC power source through a current-limiting impedance element consisting of a lamp and a bridge-type full-wave rectifier in which thyristors are the components on at least two adjacent sides. a main ignition circuit that connects both ends of the thyristor to a pair of bias voltage terminals of a PVD device via a cold current impedance element, detects a flash between electrodes of the PVD device, and applies a pulsed ignition current to the crowbar thyristor; and the PVD
A PV device equipped with a sub-ignition circuit that detects a flash between electrodes of the device, cuts off the supply of ignition current to the thyristor, and restores the PVD device after recovery from the flash between the electrodes of the PVD device.
D. A bias circuit for a PVD device, characterized in that a series circuit of a reactor and a resistor is connected in parallel with the current limiting impedance element, and a damper diode is connected in parallel with the reactor.
JP19514786U 1986-12-18 1986-12-18 Pending JPS63102757U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19514786U JPS63102757U (en) 1986-12-18 1986-12-18

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19514786U JPS63102757U (en) 1986-12-18 1986-12-18

Publications (1)

Publication Number Publication Date
JPS63102757U true JPS63102757U (en) 1988-07-04

Family

ID=31152770

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19514786U Pending JPS63102757U (en) 1986-12-18 1986-12-18

Country Status (1)

Country Link
JP (1) JPS63102757U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03191056A (en) * 1989-12-19 1991-08-21 Mitsubishi Electric Corp Thin film forming device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03191056A (en) * 1989-12-19 1991-08-21 Mitsubishi Electric Corp Thin film forming device

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