JPS63102769U - - Google Patents
Info
- Publication number
- JPS63102769U JPS63102769U JP19608086U JP19608086U JPS63102769U JP S63102769 U JPS63102769 U JP S63102769U JP 19608086 U JP19608086 U JP 19608086U JP 19608086 U JP19608086 U JP 19608086U JP S63102769 U JPS63102769 U JP S63102769U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- compound semiconductor
- susceptor
- substrate
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims 6
- 239000004065 semiconductor Substances 0.000 claims 6
- 239000002184 metal Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 230000000737 periodic effect Effects 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- 238000001947 vapour-phase growth Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図は本考案装置の模式図、第２図は第１図
の―線による部分横断面図、第３，４図は従
来装置の模式図である。
１……反応炉、２……サセプタ、３……基板、
４……高周波加熱用のコイル、５……支持筒、５
……供給管、６……排気管、７……排気ポンプ、
８……駆動部、１０ａ，１０ｂ，１０ｃ，１０ｄ
……流量コントローラ、１２ａ，１２ｂ，１２ｃ
，１２ｄ……管路、１３……バブラ。
FIG. 1 is a schematic diagram of the device of the present invention, FIG. 2 is a partial cross-sectional view taken along the line --- in FIG. 1, and FIGS. 3 and 4 are schematic diagrams of the conventional device. 1... Reactor, 2... Susceptor, 3... Substrate,
4... Coil for high frequency heating, 5... Support tube, 5
... Supply pipe, 6 ... Exhaust pipe, 7 ... Exhaust pump,
8... Drive unit, 10a, 10b, 10c, 10d
...Flow rate controller, 12a, 12b, 12c
, 12d...pipeline, 13...bubbler.
Claims (1)
沿つて有機金属を含む原料ガスを通流させ、気相
成長法により基板表面に化合物半導体膜を形成す
る装置において、前記サセプタに原料ガスの通流
方向に対する傾斜角度調節手段を設けたことを特
徴とする化合物半導体膜の形成装置。 ２ 前記サセプタは基板を固定する面と交叉する
軸回りに回転可能に支持されている実用新案登録
請求の範囲第１項記載の化合物半導体膜の形成装
置。 ３ 前記化合物半導体膜は周期律表の属とＶ属
との化合物半導体膜である実用新案登録請求の範
囲第１項記載の化合物半導体膜の形成装置。[Claims for Utility Model Registration] 1. An apparatus for forming a compound semiconductor film on the substrate surface by a vapor phase growth method by flowing a raw material gas containing an organic metal along the surface of a substrate on a susceptor disposed in a reactor. 2. A compound semiconductor film forming apparatus according to claim 1, wherein the susceptor is provided with an inclination angle adjusting means with respect to the flow direction of the source gas. 2. The compound semiconductor film forming apparatus according to claim 1, wherein the susceptor is rotatably supported around an axis intersecting a surface to which the substrate is fixed. 3. The device for forming a compound semiconductor film according to claim 1, wherein the compound semiconductor film is a compound semiconductor film belonging to groups 1 and 5 of the periodic table.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19608086U JPS63102769U (en) | 1986-12-19 | 1986-12-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19608086U JPS63102769U (en) | 1986-12-19 | 1986-12-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63102769U true JPS63102769U (en) | 1988-07-04 |
Family
ID=31154567
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19608086U Pending JPS63102769U (en) | 1986-12-19 | 1986-12-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63102769U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017109891A (en) * | 2015-12-15 | 2017-06-22 | 株式会社豊田中央研究所 | Compound single crystal production apparatus and compound single crystal production method |
-
1986
- 1986-12-19 JP JP19608086U patent/JPS63102769U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017109891A (en) * | 2015-12-15 | 2017-06-22 | 株式会社豊田中央研究所 | Compound single crystal production apparatus and compound single crystal production method |
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