JPH0476031U - - Google Patents
Info
- Publication number
- JPH0476031U JPH0476031U JP11959690U JP11959690U JPH0476031U JP H0476031 U JPH0476031 U JP H0476031U JP 11959690 U JP11959690 U JP 11959690U JP 11959690 U JP11959690 U JP 11959690U JP H0476031 U JPH0476031 U JP H0476031U
- Authority
- JP
- Japan
- Prior art keywords
- vapor phase
- phase growth
- utility
- model registration
- dry air
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001947 vapour-phase growth Methods 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 239000012159 carrier gas Substances 0.000 claims 1
- 239000007795 chemical reaction product Substances 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000011148 porous material Substances 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
Description
第１図は本考案にかかる気相成長装置の系統図
、第２図は従来型の気相成長装置の系統図である
。
１……支持棒、２……サセプタ、３……基板、
４……ＲＦコイル、５……反応管、６……水素導
入口、７……マスフローコントローラ、８……バ
ブラー、９……三方弁、１０……ガスボンベ、１
１……ニードルバルブ、１２……圧力計、１３…
…ダストフイルタ、１４……コールドトラツプ、
１５……ロータリーポンプ、１６……可変バルブ
、１７……ドライエア（または酸素）導入口。
FIG. 1 is a system diagram of a vapor phase growth apparatus according to the present invention, and FIG. 2 is a system diagram of a conventional vapor phase growth apparatus. 1...Support rod, 2...Susceptor, 3...Substrate,
4...RF coil, 5...Reaction tube, 6...Hydrogen inlet, 7...Mass flow controller, 8...Bubbler, 9...Three-way valve, 10...Gas cylinder, 1
1... Needle valve, 12... Pressure gauge, 13...
...Dust filter, 14...Cold trap,
15... Rotary pump, 16... Variable valve, 17... Dry air (or oxygen) inlet.
Claims (1)
を用いて反応管内に配置されたサセプタ上の化合
物半導体基板上に気相成長させる装置において、 反応管よりキヤリアガス、反応生成物を排気す
る排気系に、ドライエアまたはドライ酸素を導入
させることを特徴とする気相成長装置。 (2) 実用新案登録請求の範囲第１項の記載にお
いて、ドライエアまたはドライ酸素は、液体窒素
トラツプまたはフオアライントラツプに導入する
ことを特徴とする気相成長装置。[Claims for Utility Model Registration] (1) In an apparatus for vapor phase growth of -V group crystal growth raw material onto a compound semiconductor substrate on a susceptor placed in a reaction tube using the MO-CVD method, A vapor phase growth apparatus characterized in that dry air or dry oxygen is introduced into an exhaust system for exhausting carrier gas and reaction products. (2) Utility Model Registration The vapor phase growth apparatus as set forth in claim 1, characterized in that dry air or dry oxygen is introduced into a liquid nitrogen trap or a pore line trap.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11959690U JPH0476031U (en) | 1990-11-14 | 1990-11-14 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11959690U JPH0476031U (en) | 1990-11-14 | 1990-11-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0476031U true JPH0476031U (en) | 1992-07-02 |
Family
ID=31867542
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11959690U Pending JPH0476031U (en) | 1990-11-14 | 1990-11-14 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0476031U (en) |
-
1990
- 1990-11-14 JP JP11959690U patent/JPH0476031U/ja active Pending