JPS6310545A - Hermetic sealing of semiconductor device - Google Patents

Abstract

PURPOSE:To suppress a temperature increase at a central part of a cap and improve a manufacturing yield of products as well as reliability by sealing a semiconductor device, thereby making it turn under circumstances where an upper surface of cap is directly sprayed with dried nitrogen while an electric current is passed between a pair of roller electrodes. CONSTITUTION:When a semiconductor device is hermetically sealed in a ceramic package by using a seam welding method, dry hydrogen is applied over a package cup. For example, after a ceramic semiconductor device 2 having a seal ring 3 is fixed to a turn table 1, a cap 4 is put in place on the seal ring 3. Once a switch turns on, a roller electrode 5 goes down to press the cap 4 and then the turn table starts rotating to pass an electric current between roller electrodes. As soon as the electric current flows between these electrodes, dry nitrogen 7 is directly applied over the cap 4 at a constant flow rate through a nozzle 6 located above the cap 4 and the sealing proceeds in this state.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for hermetically sealing a semiconductor device, and more particularly to an improvement in a method for hermetically sealing a semiconductor device in which sealing is performed using a seam welding method.

(Prior Art) Conventionally, this type of seam welding method involves fixing a semiconductor device equipped with a seal ring on a rotary table, placing a cap on the seal ring, and lowering a pair of opposing roller electrodes. , the seal ring and the cap were hermetically sealed by seam welding by applying electricity while contacting the cap and rotating the turntable.

[Problem that the invention seeks to solve]

The conventional seam weld sealing method described above is a method in which electricity is passed between a pair of roller electrodes, so heat generation due to the resistance of the cap and seal ring itself and Joule heat at the welded part (the contact area between the seal ring and the cap) is generated. It causes fever. This was not a problem if the seal ring was small, but if the seal ring was large, the cap would also be large, and the increased resistance between the seal ring and the cap would increase heat generation between the electrodes, resulting in cap burnout. , cap deformation, welding defects, etc. occur, resulting in a reduction in product manufacturing yield and reliability.

An object of the present invention is to suppress the temperature rise in the center of the cap even when the seal ring and cap become large and the heat generation between the electrodes increases due to the increase in electrical resistance between the seal ring and the cap. It is an object of the present invention to provide a method for hermetically sealing a semiconductor device, which eliminates occurrences of cap deformation, welding defects, and even destruction of ceramic semiconductor devices, and can greatly improve product manufacturing yield and reliability.

1゛Means for solving the problem゛゛ The method for hermetically sealing a semiconductor device of the present invention is a method for hermetically sealing a semiconductor device in which a semiconductor element is hermetically sealed in a ceramic one package cage by a seam welding method. , the structure is characterized in that airtight sealing is performed while blowing dry nitrogen onto the upper surface of the cap part.

〔Example〕

Next, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a schematic diagram of a seam weld for explaining one embodiment of the present invention.

As shown in FIG. 1, a ceramic semiconductor device 2 having a seal ring 3 is fixed to a rotary table 1, a cap 4 is aligned and placed on the seal ring 3, and when a switch is turned on, the roller electrode 5 is lowered. 1. After the cab 4 is pressed down, the turntable starts to rotate and electricity starts to flow between the roller electrodes. At the same time that electricity is started between the electrodes, dry nitrogen 7 is directly blown onto the upper surface of the cap at a constant flow rate from the nozzle 6 located on one side of the cap 11, and sealing proceeds in this state. In the conventional seam weld sealing method, the nozzle 6 shown in FIG. 1 was not installed.

I: Effects of the Invention As described above, in the seam weld sealing method, the present invention rotates the semiconductor device while blowing dry nitrogen directly onto the top surface of the cap while electricity is being applied between a pair of roller electrodes. This is a method of sealing. This sealing method makes the seal ring and cap larger, and even if the electrical resistance between the seal ring and cap increases and heat generation between the electrodes increases, dry nitrogen can be blown directly into the center of the cap. , it is possible to suppress the temperature rise in the center of the cap, eliminating the occurrence of cap burns, cap deformation, poor welding, and even destruction of ceramic semiconductor devices, greatly improving product manufacturing yield and reliability. This effect can be obtained.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram of a seam weld for explaining one embodiment of the present invention.

Claims (1)

[Claims] A method for hermetically sealing a semiconductor device in which a semiconductor element is hermetically sealed in a ceramic package by a seam welding method, the method comprising directly blowing dry nitrogen onto the top surface of a cap portion during hermetically sealing. .