JPS6313352A - Sealing method of semiconductor and the like - Google Patents
Sealing method of semiconductor and the likeInfo
- Publication number
- JPS6313352A JPS6313352A JP15594686A JP15594686A JPS6313352A JP S6313352 A JPS6313352 A JP S6313352A JP 15594686 A JP15594686 A JP 15594686A JP 15594686 A JP15594686 A JP 15594686A JP S6313352 A JPS6313352 A JP S6313352A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- case
- welding
- laser
- infrared heater
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007789 sealing Methods 0.000 title claims abstract description 7
- 238000000034 method Methods 0.000 title claims description 11
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 238000003466 welding Methods 0.000 claims abstract description 15
- 229920005992 thermoplastic resin Polymers 0.000 claims abstract description 7
- 238000005538 encapsulation Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 abstract description 5
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 238000000465 moulding Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- HXROKIMWMCMCOF-UHFFFAOYSA-N 10-thiatetracyclo[6.5.0.02,7.09,11]trideca-1,3,5,7,12-pentaene Chemical compound C12=CC=CC=C2C2=C1C1SC1C=C2 HXROKIMWMCMCOF-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 229920006038 crystalline resin Polymers 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- -1 ether ketone Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体類の封止方法にお°いて、熱可塑性樹
脂を使用したケースで溶着、封止する方法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for welding and sealing a case using a thermoplastic resin in a method for sealing semiconductors.
現在、半導体類の封止方法はエポキシ樹脂成形材料によ
るトランスファ成形が主体であるが、成形時間がながい
こと、自動化がむずかしいこと、チップに樹脂が直接ふ
れることが難点である。Currently, the main method for encapsulating semiconductors is transfer molding using epoxy resin molding materials, but the disadvantages are that the molding time is long, automation is difficult, and the resin comes into direct contact with the chip.
この点を改善するために、予め熱可塑性樹脂でケースを
作っておき、リードフレームを接着、溶着する方法が考
えられている。例えば、特開昭５５−１０２２５７号公
報のように超音波方式があるが、その振幅のために配線
の破断を生じる。又、特開昭５６−１０１７６０号公報
のように加熱溶着法は、信頼性とパリが問題でちる。In order to improve this point, a method has been considered in which a case is made in advance from a thermoplastic resin and a lead frame is bonded or welded to the case. For example, there is an ultrasonic method as disclosed in Japanese Unexamined Patent Publication No. 55-102257, but the amplitude of the ultrasonic wave causes the wiring to break. Furthermore, the heat welding method as disclosed in Japanese Patent Application Laid-Open No. 56-101760 has problems with reliability and separation.
本発明は、このような点に鑑みてなされたものでチシ、
その目的とするところは溶着部のパリ発生が少なく、安
定した気密性を有する半導体類の封止を確立することに
ある。The present invention has been made in view of these points.
The purpose is to establish stable sealing of semiconductors with less occurrence of flash at the welded portion and with stable airtightness.
本発明は、半導体類の素子をマウントしたり′−ドフレ
ームと、熱可塑性樹脂によって成形されたケースで挾み
こむ半導体類の封止方法において、少すくトもケースの
一方がリードフレームの溝ニ合致した凸部を有し、リー
ドフレームとの溶着は赤外線ヒーター又はレーザーで加
熱することを特徴とする半導体類の封止方法である。ケ
ースの材質である熱可塑性樹脂は、耐熱性のあるエンジ
ニアリングプラスチック特に、ビリフェニレンサルファ
イド、ダリエーテルサルフォン、イリエーテルエーテル
ケトンなどがよい。いずれも結晶性樹脂であるので金型
温度は９０℃以下の低温成形、ケースの表面はコロナ放
電などで他性化させる方が望ましい。又、ケース１の少
なくとも一方の溶着面の形状は、リードフレームの溝に
合致するように凸部９が形成されている。ケース１及び
リードフレーム８は、予め２００〜２５０℃に金型３で
加熱しておく。加圧装置５に送られてきたケースの溶着
面を赤外線ヒータもしくはレーザー４にて０．５〜１．
０秒３００〜３５０℃に加熱する。加熱０，５〜１．０
秒後に速やかに加圧装置５によシ、１０〜５０に９の圧
力で加圧する。The present invention provides a semiconductor encapsulation method in which a semiconductor element is mounted or sandwiched between a lead frame and a case molded from a thermoplastic resin. This is a method for sealing semiconductors, which has matching protrusions and is welded to a lead frame by heating with an infrared heater or laser. The thermoplastic resin that is the material of the case is preferably a heat-resistant engineering plastic, particularly biphenylene sulfide, daryether sulfone, yriether ether ketone, or the like. Since both are crystalline resins, it is preferable to perform low-temperature molding at a mold temperature of 90° C. or lower, and to transform the surface of the case by corona discharge or the like. Further, the shape of at least one welding surface of the case 1 has a convex portion 9 formed so as to match the groove of the lead frame. The case 1 and the lead frame 8 are heated in advance to 200 to 250°C using a mold 3. The welding surface of the case sent to the pressurizing device 5 is heated by an infrared heater or laser 4 by 0.5 to 1.
Heat to 300-350°C for 0 seconds. Heating 0.5-1.0
After a few seconds, the pressure is immediately applied to the pressure device 5 at a pressure of 10 to 50 to 9.
第１図が本発明で使用する溶着機の概略図である。３の
金型でケースは予め予熱されている。６の加圧金型に順
次送）込まれたケース１とリードフレーム８は内蔵され
ている赤外線ヒータ若しくはレーザー４によシ瞬間的に
溶着面が加熱され、加圧される。FIG. 1 is a schematic diagram of a welding machine used in the present invention. The case is preheated using the mold No. 3. The welding surfaces of the case 1 and the lead frame 8, which are sequentially fed into the pressure mold No. 6, are instantaneously heated by a built-in infrared heater or laser 4, and pressurized.
本発明に従うと、エポキシ樹脂のトランスファ成形に比
べて、ケースが早く又、安くできるので、合理的である
。According to the present invention, the case can be made faster and cheaper than transfer molding of epoxy resin, so it is rational.
又、ケースの形状をリードフレームの溝に合致させてい
るので溶着した時のパリの発生が少なく、赤外線ヒータ
やレーザーによる瞬間的加熱は、ヒーターや熱風に比較
して非常に安定した温度が得られるので溶着した部分の
安定した密着性、耐湿性が得られる。In addition, since the shape of the case matches the groove of the lead frame, there is less generation of cracks when welding, and instantaneous heating using an infrared heater or laser provides a much more stable temperature than using a heater or hot air. As a result, stable adhesion and moisture resistance of the welded parts can be obtained.
１６ ｐｉｎ ＤＩＰ用のリードフレームに合致させた
ケースを、ピリフェニレンサルファイドで、金型温度８
０℃で成形した。A case that matches the lead frame for 16 pin DIP is made of pyriphenylene sulfide at a mold temperature of 8.
Molding was carried out at 0°C.
ケース及びリードフレームを溶着機の予熱型に挿入し、
２５０℃に予熱した。予熱されたケース及びリードフレ
ームをレーザーによ、Ｄ ０．５秒加熱溶融させ２０ｋ
ｆの圧力をかけて圧着した。得られた製品は有害なパリ
発生もなく、１２５℃ＰＣＴにおいても良好な結果が得
られた。Insert the case and lead frame into the preheating mold of the welding machine,
Preheated to 250°C. The preheated case and lead frame are heated and melted by a laser for D 0.5 seconds for 20k.
It was crimped by applying a pressure of f. The obtained product did not generate harmful paris, and good results were obtained even in 125° C. PCT.
第１図は本発明で使用する溶着機の概略断面図及び第２
図は本発明で使用するケースの断面図である。Fig. 1 is a schematic sectional view of the welding machine used in the present invention, and Fig.
The figure is a sectional view of a case used in the present invention.
Claims (1)
塑性樹脂によって成形されたケースで挾みこむ半導体類
の封止方法において、少なくともケースの一方がリード
フレームの溝に合致した凸部を有し、リードフレームと
の溶着は赤外線ヒーター又はレーザーで加熱することを
特徴とする半導体類の封止方法。In a semiconductor encapsulation method in which a lead frame on which a semiconductor element is mounted is sandwiched between a case molded from thermoplastic resin, at least one of the cases has a convex portion that matches the groove of the lead frame, and the lead frame A method for sealing semiconductors, characterized in that the welding is heated with an infrared heater or laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15594686A JPS6313352A (en) | 1986-07-04 | 1986-07-04 | Sealing method of semiconductor and the like |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15594686A JPS6313352A (en) | 1986-07-04 | 1986-07-04 | Sealing method of semiconductor and the like |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6313352A true JPS6313352A (en) | 1988-01-20 |
Family
ID=15616979
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15594686A Pending JPS6313352A (en) | 1986-07-04 | 1986-07-04 | Sealing method of semiconductor and the like |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6313352A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55110061A (en) * | 1979-02-17 | 1980-08-25 | Hitachi Chem Co Ltd | Fabrication of semiconductor package |
| JPS5633847A (en) * | 1979-08-28 | 1981-04-04 | Hitachi Chem Co Ltd | Package molding for semiconductor |
-
1986
- 1986-07-04 JP JP15594686A patent/JPS6313352A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55110061A (en) * | 1979-02-17 | 1980-08-25 | Hitachi Chem Co Ltd | Fabrication of semiconductor package |
| JPS5633847A (en) * | 1979-08-28 | 1981-04-04 | Hitachi Chem Co Ltd | Package molding for semiconductor |
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