JPS63140652U - - Google Patents

Info

Publication number
JPS63140652U
JPS63140652U JP3201987U JP3201987U JPS63140652U JP S63140652 U JPS63140652 U JP S63140652U JP 3201987 U JP3201987 U JP 3201987U JP 3201987 U JP3201987 U JP 3201987U JP S63140652 U JPS63140652 U JP S63140652U
Authority
JP
Japan
Prior art keywords
semiconductor region
conductivity type
region
type semiconductor
insulating substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3201987U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP3201987U priority Critical patent/JPS63140652U/ja
Publication of JPS63140652U publication Critical patent/JPS63140652U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】
第１図は本考案フオトセンサの一つの実施例を
示す断面図、第２図はフオトセンサの従来例を示
す断面図である。 符号の説明１……絶縁基板、２，６……第１導
電型半導体領域、３，７……真性半導体領域、４
，８……第２導電型半導体領域、５……縦型セン
ス部、９……横型センス部。

Claims (1)

  1. 【実用新案登録請求の範囲】 絶縁基板の一部領域上に第１導電型半導体領域
    、真性半導体領域及び第２導電型半導体領域を積
    層状に形成し、 絶縁基板の他の領域の少なくとも一部に第１導
    電型半導体領域、真性半導体領域及び第２導電型
    領域をラテラルに形成してなる ことを特徴とするフオトセンサ。
JP3201987U 1987-03-04 1987-03-04 Pending JPS63140652U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3201987U JPS63140652U (ja) 1987-03-04 1987-03-04

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3201987U JPS63140652U (ja) 1987-03-04 1987-03-04

Publications (1)

Publication Number Publication Date
JPS63140652U true JPS63140652U (ja) 1988-09-16

Family

ID=30838291

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3201987U Pending JPS63140652U (ja) 1987-03-04 1987-03-04

Country Status (1)

Country Link
JP (1) JPS63140652U (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002305296A (ja) * 2001-04-09 2002-10-18 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002305296A (ja) * 2001-04-09 2002-10-18 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法

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