JPS6316458B2 - - Google Patents
Info
- Publication number
- JPS6316458B2 JPS6316458B2 JP59208471A JP20847184A JPS6316458B2 JP S6316458 B2 JPS6316458 B2 JP S6316458B2 JP 59208471 A JP59208471 A JP 59208471A JP 20847184 A JP20847184 A JP 20847184A JP S6316458 B2 JPS6316458 B2 JP S6316458B2
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- substrate material
- semiconductor device
- powder
- thermal expansion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
Landscapes
- Powder Metallurgy (AREA)
- Die Bonding (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59208471A JPS6187843A (ja) | 1984-10-03 | 1984-10-03 | 半導体装置用基板材料およびその製造方法 |
| EP85112553A EP0183016B1 (en) | 1984-10-03 | 1985-10-03 | Material for a semiconductor device and process for its manufacture |
| DE8585112553T DE3573137D1 (en) | 1984-10-03 | 1985-10-03 | Material for a semiconductor device and process for its manufacture |
| US07/039,713 US4830820A (en) | 1984-10-03 | 1987-04-20 | Method for producing material for semiconductor device |
| US07/039,714 US4926242A (en) | 1984-10-03 | 1987-04-20 | Aluminum-silicon alloy heatsink for semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59208471A JPS6187843A (ja) | 1984-10-03 | 1984-10-03 | 半導体装置用基板材料およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6187843A JPS6187843A (ja) | 1986-05-06 |
| JPS6316458B2 true JPS6316458B2 (2) | 1988-04-08 |
Family
ID=16556722
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59208471A Granted JPS6187843A (ja) | 1984-10-03 | 1984-10-03 | 半導体装置用基板材料およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6187843A (2) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS634630A (ja) * | 1986-06-24 | 1988-01-09 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPH01205055A (ja) * | 1988-02-12 | 1989-08-17 | Sumitomo Electric Ind Ltd | 半導体装置用基板材料 |
| JP4906206B2 (ja) * | 2001-09-27 | 2012-03-28 | 東洋アルミニウム株式会社 | Al−Si系粉末合金材料及びその製造方法 |
-
1984
- 1984-10-03 JP JP59208471A patent/JPS6187843A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6187843A (ja) | 1986-05-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4830820A (en) | Method for producing material for semiconductor device | |
| JP3493844B2 (ja) | 半導体基板材料とその製造方法及び該基板を用いた半導体装置 | |
| US6737168B1 (en) | Composite material and semiconductor device using the same | |
| EP0100232B2 (en) | Substrate for semiconductor apparatus | |
| DE60017304T2 (de) | Metallmatrix-Verbundmaterial, Verfahren zu seiner Herstellung und seine Verwendung | |
| US6238454B1 (en) | Isotropic carbon/copper composites | |
| US5786075A (en) | Heat sinks and process for producing the same | |
| US5413751A (en) | Method for making heat-dissipating elements for micro-electronic devices | |
| DE69031680T2 (de) | Umhüllung und Montagesockel für RF-Transistor | |
| US5311399A (en) | High power ceramic microelectronic package | |
| JPS62197292A (ja) | Si半導体素子をCu基合金製リードフレームに少ない残留熱歪ではんだ付けする方法 | |
| JPS6316458B2 (2) | ||
| JP3451979B2 (ja) | 半導体装置 | |
| KR100292681B1 (ko) | 반도체용열방산체및그의제조방법 | |
| EP1473374B1 (en) | Copper alloy | |
| US5605558A (en) | Nitrogenous aluminum-silicon powder metallurgical alloy | |
| KR20040084315A (ko) | 진공아아크 용해법에 의한 고규소 Al-Si합금전자패키징용 소재 및 그 제조방법 | |
| JPH07105464B2 (ja) | 半導体素子搭載用半導体装置 | |
| JP3371874B2 (ja) | パワーモジュール | |
| JP3552587B2 (ja) | 複合材料及び半導体装置 | |
| JP2815656B2 (ja) | パッケージ型半導体装置の高強度放熱性構造部材 | |
| JPS61130438A (ja) | 半導体装置用材料の製造方法 | |
| JPH0892681A (ja) | 窒素化合アルミニウム−シリコン粉末合金およびその製造方法 | |
| JPH0321091B2 (2) | ||
| JPH10321776A (ja) | 半導体素子用放熱部材 |