JPS63193401A - dielectric porcelain composition - Google Patents
dielectric porcelain compositionInfo
- Publication number
- JPS63193401A JPS63193401A JP62022423A JP2242387A JPS63193401A JP S63193401 A JPS63193401 A JP S63193401A JP 62022423 A JP62022423 A JP 62022423A JP 2242387 A JP2242387 A JP 2242387A JP S63193401 A JPS63193401 A JP S63193401A
- Authority
- JP
- Japan
- Prior art keywords
- weight
- temperature coefficient
- dielectric constant
- composition
- dielectric ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は誘電率が高く、温度係数が小さく、良好度Qに
すぐれ、かつ絶縁抵抗の高い誘電体磁器組成物に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a dielectric ceramic composition that has a high dielectric constant, a small temperature coefficient, an excellent quality Q, and a high insulation resistance.
従来の技術
従来から温度係数の小さい誘電体が、コンデンサ用素子
として要求され、誘電体磁器組成物として下記のような
系が知られている。2. Description of the Related Art A dielectric material with a small temperature coefficient has been required as a capacitor element, and the following systems are known as dielectric ceramic compositions.
M g O−T i O2−Co O系La O−2
TiO2−CaTiO3−2M g O−T i O2
系
TiO−BaTiO3−B 1203
−La203系
S rZ ro3− S ro −Nb20s−Ca
T i O3系
発明が解決しようとする問題点
しかし、これらの組成は誘電率が低く、また、5rZr
O−3rO−Nb205−CaTiO3系は良好度Qも
悪いという問題があった。M g O-T i O2-Co O-based La O-2
TiO2-CaTiO3-2M g O-T i O2
System TiO-BaTiO3-B 1203 -La203 system S rZ ro3- S ro -Nb20s-Ca
Problems to be solved by the T i O3-based invention However, these compositions have a low dielectric constant, and 5rZr
The O-3rO-Nb205-CaTiO3 system had a problem in that the quality Q was also poor.
本発明は誘電率が高く、温度係数が小さく、良好度Qに
すぐれ、且つ絶縁抵抗が高い誘電体磁器を得ることを目
的とするものである。The object of the present invention is to obtain a dielectric ceramic having a high dielectric constant, a small temperature coefficient, an excellent quality Q, and a high insulation resistance.
問題点を解決するための手段
この問題点を解決するために本発明の誘電体磁器組成物
は、一般式
%式%)]
と表わした時、x、y、zが以下に表わす各点a。Means for Solving the Problem In order to solve this problem, the dielectric ceramic composition of the present invention has the following formula: .
b、c、dで囲まれる2モル比の範−囲伸ある組成物に
対し、PbOが0重量%を−除き15重量%・以−下添
第1図は本発明にかかる組成物の主成分の組成範囲を示
す三角図であり、主成分の組成範囲を限定した理由を図
を参照しながら説明する。A領域では焼結困難となり誘
電率、良好度Q、絶縁抵抗が低下する。B領域では温度
係数か−(マイナス)側に大きくなり過ぎて、実用的で
なくなる。C領域では温度係数が+(プラス)側に大き
くなり、誘導率も小さい、D領域では焼結が一難となり
、誘電率、良好度Q、絶縁抵抗が低下する。また、0<
1≦0.25の範囲ではmを大きくすると温度係数は+
(プラス)側に移行し、適当な組成を選ぶことによって
温度係数NPO付近で誘電率の大きな組成が得られる。For a composition with a range of 2 molar ratios surrounded by b, c, and d, PbO is 15% by weight excluding 0% by weight. It is a triangular diagram showing the composition range of the components, and the reason why the composition range of the main component is limited will be explained with reference to the diagram. In region A, sintering becomes difficult and the dielectric constant, quality Q, and insulation resistance decrease. In region B, the temperature coefficient becomes too large on the - (minus) side, making it impractical. In the C region, the temperature coefficient becomes large on the + (plus) side and the dielectric constant is small. In the D region, sintering becomes difficult, and the dielectric constant, quality Q, and insulation resistance decrease. Also, 0<
In the range of 1≦0.25, increasing m increases the temperature coefficient to +
By shifting to the (plus) side and selecting an appropriate composition, a composition with a large dielectric constant near the temperature coefficient NPO can be obtained.
lが0.25を越えると焼結が困難となり、誘電率、良
好度Q、絶縁抵抗が低下する。また、0.05≦n <
1.00の範囲ではnを大きくすると、温度係数は+
(プラス)側に移行し、適当な・組成を選ぶことによっ
て温度係数NPO付近で誘電率の大きな組成物が得られ
る。nがO,OS未満になると温度係数が−(マイナス
)側に大きくなり実用的でなくなる。また、PbOの添
加については、添加量を増やすに従って誘電率を増大さ
せることができ、温度係数を+(プラス)側へ移行させ
ることができ、適当な添加量を選ぶことによって温度係
数NPO付近で誘電率の大きな組成物が得られる。When l exceeds 0.25, sintering becomes difficult, and the dielectric constant, quality Q, and insulation resistance decrease. Also, 0.05≦n<
In the range of 1.00, increasing n increases the temperature coefficient to +
By shifting to the (plus) side and selecting an appropriate composition, a composition with a large dielectric constant near the temperature coefficient NPO can be obtained. If n is less than O or OS, the temperature coefficient becomes large on the - (minus) side, making it impractical. Furthermore, with regard to the addition of PbO, the dielectric constant can be increased as the amount added is increased, and the temperature coefficient can be shifted to the + (plus) side. A composition with a large dielectric constant can be obtained.
本発明は更に、上記主成分に対し、マンガン、クロム、
鉄、ニッケル、コバルト及びケイ素からなる群の中から
選ばれた少なくとも1種の元素を、それぞれMnO2、
Cr2O3,Fed、Nip。The present invention further provides manganese, chromium,
At least one element selected from the group consisting of iron, nickel, cobalt and silicon is added to MnO2,
Cr2O3, Fed, Nip.
Coo及びSlO□に換算して前記主成分の0.05〜
1.00重量%添加せしめた構成とすることができる。0.05 to 0.05 of the above main components in terms of Coo and SlO□
It can be configured such that 1.00% by weight is added.
これらの添加物は磁器の焼結性を向上する効果を有し、
その添加量が0.05重量%未満では添加効果はなく、
1600重量%を越えると誘電率が低下し実用的でなく
なる。These additives have the effect of improving the sinterability of porcelain,
If the amount added is less than 0.05% by weight, there is no effect of the addition.
When it exceeds 1,600% by weight, the dielectric constant decreases and becomes impractical.
作用
本発明の誘電体磁器組成物により、誘電率が高く温度係
数が小さく、良好度Qにすぐれ、かつ絶縁抵抗が高い誘
電体磁器を得ることができる。Function: Using the dielectric ceramic composition of the present invention, it is possible to obtain a dielectric ceramic having a high dielectric constant, a small temperature coefficient, an excellent quality Q, and a high insulation resistance.
実施例 以下、本発明を具体的実施例により説明する。Example The present invention will be explained below using specific examples.
実施例1
出発原料には化学的に高純度のBaCO3,TlO2、
ZrO2、Nd2O3、Sm2 o3及びPbO粉末を
第1表に示す組成になるように秤量し、めのうボールを
備えたゴム内張りしたボールミルに純水とともに入れ、
湿式混合後、脱水乾燥した。この乾燥粉末を高アルミナ
質のルツボに入れ、1000℃で2時間仮焼した。この
仮焼粉末をめのうボールを備えたゴム内張りしたボール
ミルに純水とともに入れ、湿式粉砕した。この粉砕物を
脱水乾燥した後、粉末にバインダーとして濃度5重量%
のポリビニルアルコール溶液を9重量%添加して均質と
した後、32メツシユのふるいを通して整粒した。整粒
粉体を金型と油圧プレスを用いて成形圧力1 ton
7cm2テ直径15Ill、厚ミ0.4111に成形し
、成形物をジルコニア匣鉢中に入れ、空気中において第
1表に示す温度で2時間焼成し、第1表に示す配合組成
の誘電体磁器を得た。Example 1 Starting materials include chemically highly purified BaCO3, TlO2,
ZrO2, Nd2O3, Sm2O3, and PbO powders were weighed to have the composition shown in Table 1, and put into a rubber-lined ball mill equipped with an agate ball together with pure water.
After wet mixing, the mixture was dehydrated and dried. This dry powder was placed in a high alumina crucible and calcined at 1000°C for 2 hours. This calcined powder was put into a rubber-lined ball mill equipped with agate balls together with pure water, and wet-pulverized. After dehydrating and drying this pulverized material, it is added to powder with a concentration of 5% by weight as a binder.
After adding 9% by weight of a polyvinyl alcohol solution to make the mixture homogeneous, the mixture was sized through a 32-mesh sieve. The sized powder is molded using a mold and a hydraulic press at a pressure of 1 ton.
The molded product was molded to a diameter of 7 cm2, 15 Ill, and a thickness of 0.4111, and the molded product was placed in a zirconia sagger and fired in air at the temperature shown in Table 1 for 2 hours to produce dielectric porcelain having the composition shown in Table 1. I got it.
これらの試料の電気特性は、試料の両面に銀電極を焼き
付け、誘電率、良好度Q、温度係数はYHP社製デジタ
ルLCRメータのモデル4275Aを使用し、測定温度
25℃、測定電圧1.OV 、測「lS
定周波数IMH2による測定より求めた。なお、温度係
数は25°Cに於ける容量値を基準とし、次式により求
めた。The electrical properties of these samples were determined by baking silver electrodes on both sides of the samples, and measuring the dielectric constant, quality Q, and temperature coefficient using a YHP digital LCR meter model 4275A at a measurement temperature of 25°C and a measurement voltage of 1. OV was determined by measurement using a constant frequency IMH2.The temperature coefficient was determined using the following formula using the capacitance value at 25°C as a reference.
温度係数(ppm/’C)
=[(C−C) / (Cx6(1)]xlOG85℃
25℃ 25℃
絶縁抵抗はYHP社製HRメータのモデル4329Aを
使用し、測定電圧D C50V、測定時間1分間による
測定より求めた。試験結果を第1表に示した。Temperature coefficient (ppm/'C) = [(C-C) / (Cx6(1)]xlOG85℃
25° C. 25° C. Insulation resistance was determined by measurement using HR meter model 4329A manufactured by YHP Co., Ltd. at a measurement voltage of 50 V DC and a measurement time of 1 minute. The test results are shown in Table 1.
実施例2
出発原料には化学的に高純度のB a CO3,TlO
2,ZrO2,Nd2O3,Sm2O3,Pbo、Mn
O、Cr2O3、Fed、Nip。Example 2 Chemically highly purified B a CO3, TlO as starting materials
2, ZrO2, Nd2O3, Sm2O3, Pbo, Mn
O, Cr2O3, Fed, Nip.
Coo及びSiO□粉末を第2表に示す組成になるよう
に秤量し、それ以後は実施例1の場合と同様に処理して
第2表に示す配合組成の誘電体磁器を得た。Coo and SiO□ powders were weighed to have the compositions shown in Table 2, and thereafter treated in the same manner as in Example 1 to obtain dielectric ceramics having the compositions shown in Table 2.
これらの試料の試験方法は実施例1と同一であり、試験
結果を第2表に示す。The testing methods for these samples were the same as in Example 1, and the test results are shown in Table 2.
発明の効果
以上のように本発明によれば、誘電率が高く、温度係数
が小さく、良好度Qにすぐれ、かつ絶縁抵抗の高い誘電
体磁器が得られる。また、マンガン、クロム、鉄、ニッ
ケル、コバルト及びケイ素の添加により焼成温度を低下
させることができる。Effects of the Invention As described above, according to the present invention, a dielectric ceramic having a high dielectric constant, a small temperature coefficient, an excellent quality Q, and a high insulation resistance can be obtained. Furthermore, the firing temperature can be lowered by adding manganese, chromium, iron, nickel, cobalt, and silicon.
更に得られた誘電体磁器は高誘電率であるため、素体を
きわめて小形にすることができ、回路の微小化に有効で
ある。Furthermore, since the obtained dielectric ceramic has a high dielectric constant, the element body can be made extremely small, which is effective for miniaturizing circuits.
第1図は本発明にかかる主成分の組成範囲を示す三角図
である。
特許出願人 松下電器産業株式会社(Nd203)
1−n(Sm203)n (Eル)第1図FIG. 1 is a triangular diagram showing the composition range of the main components according to the present invention. Patent applicant Matsushita Electric Industrial Co., Ltd. (Nd203)
1-n (Sm203)n (Ele) Figure 1
Claims (2)
2)_m]−z[(Nd_2O_3)_1_−_n(S
m_2O_3)_n]ただし、x+y+z=1.00 0<m≦0.25 0.05≦n<1.00 と表わした時、x、y、zが以下に表わす各点a、b、
c、dで囲まれるモル比の範囲にある組成物に対し、P
bOが0重量%を除き15重量%以下添加含有されてい
ることを特徴とする誘電体磁器組成物。(1) General formula xBaO-y[(TiO_2)_1_-_m(ZrO_
2)_m]-z[(Nd_2O_3)_1_-_n(S
m_2O_3)_n] However, when expressed as x+y+z=1.00 0<m≦0.25 0.05≦n<1.00, x, y, and z are each point a, b,
For compositions in the molar ratio range surrounded by c, d, P
A dielectric ceramic composition characterized in that bO is added in an amount of 15% by weight or less excluding 0% by weight.
ケイ素からなる群の中から選ばれた少なくとも1種の元
素を、それぞれMnO_2、Cr_2O_3、FeO、
NiO、CoO及びSiO_2に換算して、主成分の0
.05乃至1.00重量%添加含有したことを特徴とす
る特許請求の範囲第(1)項に記載の誘電体磁器組成物
。(2) At least one element selected from the group consisting of manganese, chromium, iron, nickel, cobalt and silicon, MnO_2, Cr_2O_3, FeO,
0 of the main components in terms of NiO, CoO and SiO_2
.. 05 to 1.00% by weight of the dielectric ceramic composition according to claim (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62022423A JPH0821258B2 (en) | 1987-02-04 | 1987-02-04 | Dielectric porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62022423A JPH0821258B2 (en) | 1987-02-04 | 1987-02-04 | Dielectric porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63193401A true JPS63193401A (en) | 1988-08-10 |
| JPH0821258B2 JPH0821258B2 (en) | 1996-03-04 |
Family
ID=12082272
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62022423A Expired - Lifetime JPH0821258B2 (en) | 1987-02-04 | 1987-02-04 | Dielectric porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0821258B2 (en) |
-
1987
- 1987-02-04 JP JP62022423A patent/JPH0821258B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0821258B2 (en) | 1996-03-04 |
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