JPS63193579A - Optical semiconductor device - Google Patents

Abstract

PURPOSE:To increase the directivity of light emitted from an optical semiconductor element and to expand a light path, which is diffused from the top surface of surface mounting type optical semiconductor device, by changing the size of the an annular insulating plate body in a staircase shape. CONSTITUTION:A conducting pattern 2 comprising copper or copper alloy is formed on one surface of an insulating supporting substrate 1 so that the pattern is isolated with a discontinuous part 3. A rear surface electrode 4 comprising conductive metal corresponding to the conductive pattern 2 is provided on the other surface. Meanwhile, a through hole is provided in the insulating supporting substrate 1 in order to connect the conductive pattern 2 with the rear surface electrode 4. A conductive metal layer 5 is deposited in the through hole by electroless plating or an ordinary plating method. The size of an annular insulating plate body is changed into a tiered form. Thus the directivity of light emitted from an optical semiconductor element is enhanced.

Description

[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) The present invention relates to the improvement of a surface-mounted type optical semiconductor device, and the present invention relates to the improvement of optical semiconductor devices that belong to the surface mount type, and is concerned with the improvement of optical semiconductor devices that emit visible light or infrared rays. It is something to improve.

(Prior Art) Optical semiconductor devices installed on a flat surface of equipment are called surface mount type devices.

Naturally, one side thereof is provided with an electrode for electrical connection with the optical semiconductor element, and the opposite side is irradiated with light emitted from the optical semiconductor element.

The structure will be explained with reference to FIGS. 6 and 7. First, a ceramic substrate or a printed circuit board is prepared as a support substrate 50, and patterns 51, 51 made of conductive metal copper or copper alloy are formed on its negative side. Discontinuous part 52
Separate and form by.

When a printed circuit board is used, a conductive pattern formed in advance using a conventional method is used, and electrical conductors 54 installed in through holes are used to connect the electrodes 53 and 53 attached to the other side of the printed circuit board. Aiming for a positive connection.

On the other hand, a semiconductor element 55 such as a light emitting element or a phototransistor is manufactured by connecting an electrode provided in a part of the semiconductor element 55 to one of the conductive patterns using a thin metal wire 56.
3.53 constitutes the two poles necessary for this semiconductor element 55, and therefore the structure is suitable for surface mounting.

Furthermore, an annular insulating plate 57 made of ceramic or the like is laminated and fixed on one surface of the insulating support substrate 50 to impart heat resistance characteristics, and the resulting openings, that is, conductive patterns 5
1.51, it has a shape that covers the optical semiconductor element 55 and the thin metal wire 56. FIG. 7 shows a perspective view of the transparent resin before the coating step. As is clear from this figure, the openings of the annular insulating plates 57 are formed in planes perpendicular to the conductive patterns 51, 51, because the annular insulating plates are formed to have the same dimensions. There is.

(Problems to be Solved by the Invention) In an optical semiconductor device having such a structure, in consideration of heat resistance characteristics, annular insulating plates of the same size are laminated as described above, and the aperture size is Since the diameter is about 2φ, only the area directly above the semiconductor element emits light, and the emitted light has the disadvantage that the directivity is not wide. Therefore, when this surface-mounted optical semiconductor device is used in a telephone set or the like, the user's visual field is limited, resulting in inconvenience and a loss of commercial value.

An object of the present invention is to provide a novel optical semiconductor device that eliminates the above-mentioned drawbacks.

[Structure of the invention]

(Means for Solving the Problem) In order to achieve this object, the optical semiconductor device according to the present invention includes a conductive pattern disposed on one surface of an insulating support substrate and an annular insulating plate layered surrounding the optical semiconductor element. A method is adopted in which the emitted light is expanded from the top surface of the optical semiconductor device by increasing the diameter stepwise.

(Function) As described above, the present invention takes advantage of the structure of most of the conventionally used surface mount type optical semiconductor devices by changing the dimensions of the annular insulating plate in a stepwise manner. The directivity of emitted light from an optical semiconductor element is increased, and as a result, the optical path emitted from the top surface of a surface-mounted optical semiconductor device is expanded, thereby improving its commercial value.

(Example) The present invention will be explained in detail with reference to FIGS. 1 to 5, and new numbers will be added to descriptions that overlap with conventional technical problems.

1 and 5 are partially cutaway perspective views of this optical semiconductor device, and FIG. 2 is a perspective view of the completed optical semiconductor device.
Figures 3a-Q and 4a-C show perspective views of the annular insulating plate that is the applied part.

This surface-mount type optical semiconductor device has an insulating support substrate 1 made of a printed circuit board or a ceramic substrate, and conductive patterns 2 made of copper or a prepared alloy are formed on one side of the supporting substrate 1, which constitutes a surface facing each other. 2 to discontinuous part 3
A back electrode 4 made of conductive metal corresponding to the conductive patterns 2, 2 is also formed on the other surface.
・Establish.

On the other hand, in order to electrically connect the conductive pattern 2... and the back electrode 4..., a through hole is provided in the insulating support substrate 1, and a conductive layer is formed here by electroless plating or a normal plating method. This is achieved by applying a metal layer 5.

An optical semiconductor element 6 such as a light emitting element or a phototransistor is mounted on one of the conductive patterns 2 separated by a discontinuous portion using a conductive paste or the like, and a bonding process is performed between the electrode and the other conductive pattern 2 using a thin metal wire 7. to achieve electrical continuity, and connect the back electrode 4 through the conductive metal layer 5 adhered to the through hole.
..., and as a result, a structure necessary for a surface-mount type optical semiconductor device is created. On the other hand, in order to help emit visible light (400 nm to 600 nm) and infrared light from the optical semiconductor device operated by electrical connection between this back electrode and a power source, it is necessary to use the method shown in Fig. 3 a-c or Fig. 4 a.
An annular insulating plate 8 made of ceramic shown in c is adhered to one surface of the insulating support substrate 1. In this case, the opening 9.
. . Of course, the optical semiconductor element 6 and the thin metal wire 7 are located within the space.

Ceramic is selected as the material for the annular insulating plate 8 in order to satisfy the heat resistance and mechanical strength required for optical semiconductor devices. Consideration is given to enlarging the path of light dissipated from the optical semiconductor element 6.

When fixing this annular insulating plate 8..., a paste containing a glass component, which is applicable to Gala Evo substrates, etc., is used.
After going through that process, the opening 9 is filled with translucent resin (
(not shown) completes the optical semiconductor device.

The shape of the opening 9 provided in the annular insulating plate 8 is appropriately selected from the rectangular parallelepiped shown in FIG. 3 or the circular shape shown in FIG. 4, and its diameter is approximately 2φ. Needless to say, it is possible to increase the number of optical semiconductor elements 6 as shown in FIG. 2 if necessary.

〔Effect of the invention〕

As described above, the surface-mount type optical semiconductor device according to the present invention emits light from the top surface over a wide range, so that it does not affect the visual sense of the consumer and increases its commercial value. The structure to achieve this is to change the opening dimensions of multiple annular insulating plates fixed to one surface of the insulating support substrate into a step-like pattern, which is inexpensive and easy to form, and to bond the optical semiconductor elements and thin metal wires. It also improves workability in other processes, brings about effects in mass production, and contributes to improved yields.

[Brief explanation of the drawing]

1 and 5 are partially cutaway perspective views showing embodiments of the present invention, FIG. 2 is a perspective view of an optical semiconductor device of the present invention, FIG. 3 a'=c, and FIG. 4 a- Q is a perspective view of the component parts, FIG. 6 is a partially cutaway perspective view of a conventional example, and FIG. 7 is a perspective view of a conventional optical semiconductor device.

Claims (1)

[Claims] a conductive pattern having a discontinuous portion formed on one surface of an insulating support substrate; an optical semiconductor element adhered to one side of the conductive pattern; a means for electrically connecting the optical semiconductor element electrode to another conductive pattern; comprising a plurality of electrodes provided on the other surface opposite to one surface of the insulating support substrate, and means for penetrating the thickness direction of the insulating support substrate and electrically connecting the conductive pattern and the plurality of electrodes, An optical semiconductor device characterized in that the diameters of a plurality of annular insulating plates laminated on one surface of the insulating support substrate are increased in a stepwise manner, and a transparent resin layer is disposed in the resulting openings.