JPS63201932A - Production of optical recording medium - Google Patents
Production of optical recording mediumInfo
- Publication number
- JPS63201932A JPS63201932A JP62034835A JP3483587A JPS63201932A JP S63201932 A JPS63201932 A JP S63201932A JP 62034835 A JP62034835 A JP 62034835A JP 3483587 A JP3483587 A JP 3483587A JP S63201932 A JPS63201932 A JP S63201932A
- Authority
- JP
- Japan
- Prior art keywords
- selenium
- tellurium
- recording medium
- nitrogen
- optical recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 17
- 239000011669 selenium Substances 0.000 claims abstract description 17
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 16
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 14
- 239000007789 gas Substances 0.000 claims description 4
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 239000008246 gaseous mixture Substances 0.000 abstract 1
- 229910001370 Se alloy Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052798 chalcogen Inorganic materials 0.000 description 2
- 150000001787 chalcogens Chemical class 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Manufacturing Optical Record Carriers (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野ゴ
本発明は、光記録媒体製造方法、特に、レーザ光によっ
て情報を記録再生することのできる光記録媒体を製造す
るための光記録媒体製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method of manufacturing an optical recording medium, particularly a method of manufacturing an optical recording medium for manufacturing an optical recording medium on which information can be recorded and reproduced using a laser beam. Regarding.
一般、レーザ光によって情報を媒体に記録し、かつ再生
する光デイスクメモリは、記録密度が高いことから大容
量記録装置として浸れた特徴を有している。この光記録
媒体材料としては、最初にタンタルと鉛が使用された(
サイエンス(5cience)154.1550.19
66))。それ以来種々の材料が使用されているが、テ
ルル等のカルコゲン元素またはこれらの化合物はよく使
用されており(特公昭47−26897号公報)、とく
にテルル−セレン系合金はよく便用されている(特公昭
54−41902号公報、特公昭57−7919号公報
、特公昭57−56058号公報)。2. Description of the Related Art Generally, optical disk memories, which record and reproduce information on a medium using laser light, have a high recording density and are therefore well-known as large-capacity recording devices. Tantalum and lead were first used as materials for this optical recording medium (
Science (5science) 154.1550.19
66)). Various materials have been used since then, but chalcogen elements such as tellurium or their compounds are often used (Japanese Patent Publication No. 47-26897), and tellurium-selenium alloys are particularly commonly used. (Japanese Patent Publication No. 54-41902, Japanese Patent Publication No. 7919-1982, Japanese Patent Publication No. 57-56058).
近年、記録装置を小型化するため、レーザ光源としては
半導体レーザが使用されてきている。半導体レーザは発
振波長が8000λ前後であるが、テルル−セレン系°
合金はこの波長帯にも比較的よく適合し、適度な反射率
と適度な吸収率が得られる(フイツク・スティタス・ソ
リダイ、 7.189゜1g64(phys−stat
−sol−ヱ、189.1964))。In recent years, in order to downsize recording devices, semiconductor lasers have been used as laser light sources. Semiconductor lasers have an oscillation wavelength of around 8000λ, but tellurium-selenium based lasers
The alloy is relatively well suited to this wavelength band, with moderate reflectance and moderate absorption (phys-stat solidi, 7.189°1g64).
-sol-e, 189.1964)).
このテルル−セレン系合金を光記録層として用いた本発
明および従来の光記録媒体製造方法によって製造される
光記録媒体の一例は第1図に示すような構成和なってい
る。An example of an optical recording medium manufactured by the present invention and a conventional optical recording medium manufacturing method using this tellurium-selenium alloy as an optical recording layer has a structure as shown in FIG.
子なわち基板1に隣接してテルル−セレン系合金よりな
る記録層21が設けられている。記録用レーザ光は基板
1を通して記録層21に集光照射され、ピット22が形
成される。基板1としてはポリカーボネート、ポリオレ
フィン、ポリメチルペンテン、アクリル、エポキシ樹脂
等の合成樹脂やガラスが使用され、基板1にはピットが
同心円状あるいはスパイラル状に一定間隔で精度よく記
録されるように通常、案内溝が設けられている。A recording layer 21 made of a tellurium-selenium alloy is provided adjacent to the substrate 1. The recording laser beam is focused and irradiated onto the recording layer 21 through the substrate 1, and pits 22 are formed. The substrate 1 is made of synthetic resin such as polycarbonate, polyolefin, polymethylpentene, acrylic, or epoxy resin, or glass. Usually, pits are recorded on the substrate 1 in a concentric or spiral manner at regular intervals with high accuracy. A guide groove is provided.
レーザビーム径程度の幅の溝に光が入射すると光は回折
され、ビーム中心が溝からずれるにつれて回折光強度の
空間分布が変化するので、これを検出してレーザビーム
を溝の中心に入射させるよう忙サーボ系が構成されてい
る。溝の幅は通常0.3〜1.3μmであ抄、溝の深さ
は使用するレーザ波長の1/20から1/4の範囲に設
定される。集光に関しても同様にサーボ系が構成されて
いる。When light enters a groove with a width similar to the diameter of the laser beam, the light is diffracted, and as the beam center shifts from the groove, the spatial distribution of the intensity of the diffracted light changes.This is detected and the laser beam is directed to the center of the groove. A busy servo system is constructed. The width of the groove is usually 0.3 to 1.3 μm, and the depth of the groove is set in the range of 1/20 to 1/4 of the wavelength of the laser used. A servo system is similarly configured for condensing light.
情報の読み出しは、記録のときよりも弱いパワーのレー
ザ光をビット上を通過するように照射することによね1
ビツトの有無に起因する反射率の変化を検出して行なう
。Information is read by irradiating a laser beam with a lower power than that used during recording so that it passes over the bits1.
This is done by detecting changes in reflectance due to the presence or absence of bits.
しかしながら、テルル−セレン合金膜では良好な品質の
記録再生信号が得られなかった。However, with the tellurium-selenium alloy film, recording and reproducing signals of good quality could not be obtained.
本発明は以上のような問題点を解決するためになされた
ものであり、耐候性がよくかつ高感度で良好な品質の信
号を得ることのできる光記録媒体の製造方法を提供する
ことを目的とする。The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a method for manufacturing an optical recording medium that has good weather resistance, high sensitivity, and can obtain signals of good quality. shall be.
本発明の光記録媒体製造方法は、基板と、レーザ光によ
って一部が選択的に除去されて情報を記録する前記基板
上に形成された記録層とを少なくとも有する光記録媒体
の製造方法であって、高周波電力によってプラズマ化さ
れた窒素ガスまたは窒素ガスを含む混合ガス中を、テル
ルおよびセレンを含む蒸気を通過させるととKより、テ
ルルとセレンと窒素とを主成分とする記録層を作製する
ように構成される。The method for manufacturing an optical recording medium of the present invention is a method for manufacturing an optical recording medium having at least a substrate and a recording layer formed on the substrate, a portion of which is selectively removed by a laser beam to record information. By passing vapor containing tellurium and selenium through nitrogen gas or a mixed gas containing nitrogen gas that has been turned into plasma by high-frequency power, a recording layer containing tellurium, selenium, and nitrogen as main components is produced. configured to do so.
記録層をテルルとセレンと窒素とを主成分とするととく
より、耐候性がよくかつ高感度でかつ良好な品質の信号
の光記録媒体が得られる。この光記録媒体が高感度でか
つ良好な品質の信号が得られる理由は、膜中に窒素とカ
ルコゲン元素との化合物が生成されるととKより、ピッ
ト形成記録の初期段階である小穴の形成が比較的低い記
録パワー照射で行なわれるためである。By making the recording layer mainly composed of tellurium, selenium, and nitrogen, an optical recording medium with good weather resistance, high sensitivity, and signals of good quality can be obtained. The reason why this optical recording medium has high sensitivity and can obtain signals of good quality is that a compound of nitrogen and chalcogen elements is generated in the film, which is caused by the formation of small holes, which is the initial stage of pit formation recording. This is because irradiation is performed with relatively low recording power.
次に、本発明の実施例について説明する。 Next, examples of the present invention will be described.
本発明の光記録媒体製造方法の一具体例は、100℃で
2時間アニール処理した内径15圓、厚さ1.2画の案
内溝付きポリカーボネート樹脂ディスク基板を真空装置
内に入れ、5×10″@Torr以下忙排気した。蒸発
源としては、第1の抵抗加熱用ボートにテルルを入れ、
第2の抵抗加熱用ボートにセレンを入れた。窒素とアル
ゴンとの混合ガスを導入し、高周波コイルに13.56
MHzの高周波電力を印加してプラズマを発生させなが
ら、テルルとセレンとをそれぞれのボートから同時に蒸
発させ、該プラズマ中を通過させることによシ、テルル
およびセレンの一部を窒化して基板上にテルルとセレン
と窒素との比が原子数パーセントで76対19対5のテ
ルルとセレンと窒素とを生成分とする層を260に厚形
酸した。しかる後、温度85℃、相対湿度90%の環境
に12時間保存して光記録媒体を作製した。この光記録
媒体は基板入射における波長8300λの反射率を測定
したところ、約29%であった。波長5aoo&の半導
体レーザ光を基板を通して入射し、記録層上で1.6μ
mφ程度に絞り、媒体線速度5.65 m / sec
、記録周波数3.77MHz、記録パルス幅70ns
ec 、記録パワー7.5mWの条件で記録し、0.7
mWで再生した。バンド@30KHzのキャリアーとノ
イズとの比(Cハ)は48dBと良好でめった。A specific example of the optical recording medium manufacturing method of the present invention is to place a polycarbonate resin disk substrate with a guide groove of 15 mm in inner diameter and 1.2 strokes in thickness, which has been annealed at 100° C. for 2 hours, into a vacuum apparatus, ″@Torr or less.As an evaporation source, tellurium was placed in the first resistance heating boat.
Selenium was placed in a second resistance heating boat. Introducing a mixed gas of nitrogen and argon to the high frequency coil at 13.56
Tellurium and selenium are simultaneously evaporated from each boat while applying MHz high-frequency power to generate plasma, and by passing through the plasma, part of the tellurium and selenium is nitrided and deposited on the substrate. A thick layer of tellurium, selenium, and nitrogen having a ratio of tellurium, selenium, and nitrogen in atomic percent of 76:19:5 was formed into a 260% thick layer. Thereafter, it was stored for 12 hours in an environment with a temperature of 85° C. and a relative humidity of 90% to produce an optical recording medium. The reflectance of this optical recording medium at a wavelength of 8300λ when incident on the substrate was measured and was approximately 29%. Semiconductor laser light with a wavelength of 5aoo& is incident through the substrate, and a laser beam of 1.6μ is applied onto the recording layer.
Narrow down to about mφ, medium linear velocity 5.65 m/sec
, recording frequency 3.77MHz, recording pulse width 70ns
ec, recorded under the conditions of recording power 7.5 mW, 0.7
Regeneration was performed at mW. The ratio of carrier to noise (C) in the band @30KHz was 48dB, which was very good.
この光記録媒体を70℃、80%の高漬高湿度の環境に
60時間保存した後、上記特性を調べたが変化はなく、
耐候性に優れた光記録媒体であることが確認された。After storing this optical recording medium in an environment of 70°C and 80% high humidity for 60 hours, the above characteristics were examined, but there were no changes.
It was confirmed that the optical recording medium has excellent weather resistance.
記録層の厚さは100kから1000&の範囲が記録再
生特性の観点から望ましく、セレンの含有量は原子数パ
ーセントで2パーセン)[上40パーセント未満の範囲
が記録再生特性、耐候性の観点から望ましく、窒素の含
有量は原子数パーセントで2パ一セント以上20パーセ
ント未満が記録再生特性、耐候性の観点から望ましい。The thickness of the recording layer is preferably in the range of 100k to 1000mm from the viewpoint of recording and reproducing characteristics, and the selenium content is 2% in terms of atomic percent) [The thickness of the recording layer is preferably less than 40% from the viewpoint of recording and reproducing characteristics and weather resistance. The content of nitrogen is desirably 2% or more and less than 20% in terms of atomic percent from the viewpoint of recording/reproducing characteristics and weather resistance.
本発明の光記録媒体製造方法は、耐候性がよくかつ高感
度で信号品質が良好な光記録媒体を製造することができ
るという効果がある。The optical recording medium manufacturing method of the present invention has the advantage that it is possible to manufacture an optical recording medium that has good weather resistance, high sensitivity, and good signal quality.
第1図は本発明および従来の光記録媒体製造方法で製造
される光記録媒体の一例を示す部分断面図である。
22ヒ′、:、、トFIG. 1 is a partial sectional view showing an example of an optical recording medium manufactured by the present invention and a conventional optical recording medium manufacturing method. 22hi′, :,,g
Claims (1)
少なくとも含むガス雰囲気中に載置し、前記ガス雰囲気
中にテルルおよびセレンを含む蒸気を通過させ、前記基
板上にテルルとセレンと窒素とを主成分とする記録層を
作製することを特徴とする光記録媒体製造方法。A substrate is placed in a gas atmosphere containing at least nitrogen gas that has been turned into plasma by high-frequency power, and vapor containing tellurium and selenium is passed through the gas atmosphere, and a vapor containing tellurium, selenium, and nitrogen as main components is placed on the substrate. A method for producing an optical recording medium, comprising producing a recording layer comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62034835A JP2508053B2 (en) | 1987-02-17 | 1987-02-17 | Optical recording medium manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62034835A JP2508053B2 (en) | 1987-02-17 | 1987-02-17 | Optical recording medium manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63201932A true JPS63201932A (en) | 1988-08-22 |
| JP2508053B2 JP2508053B2 (en) | 1996-06-19 |
Family
ID=12425257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62034835A Expired - Lifetime JP2508053B2 (en) | 1987-02-17 | 1987-02-17 | Optical recording medium manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2508053B2 (en) |
-
1987
- 1987-02-17 JP JP62034835A patent/JP2508053B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2508053B2 (en) | 1996-06-19 |
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