JPS6322012B2 - - Google Patents
Info
- Publication number
- JPS6322012B2 JPS6322012B2 JP56028107A JP2810781A JPS6322012B2 JP S6322012 B2 JPS6322012 B2 JP S6322012B2 JP 56028107 A JP56028107 A JP 56028107A JP 2810781 A JP2810781 A JP 2810781A JP S6322012 B2 JPS6322012 B2 JP S6322012B2
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- sample
- circuit
- detector
- electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010894 electron beam technology Methods 0.000 claims description 19
- 230000005284 excitation Effects 0.000 claims description 2
- 238000003384 imaging method Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 238000002441 X-ray diffraction Methods 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 3
- 238000001000 micrograph Methods 0.000 description 3
- 238000002083 X-ray spectrum Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000004452 microanalysis Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
Description
【発明の詳細な説明】
本発明は走査像観察機能をもたない電子顕微鏡
において、正確に分析点の確認を行いながら極微
小領域のX線分析を行うことのできる分析電子顕
微鏡に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an analytical electron microscope that does not have a scanning image observation function and is capable of performing X-ray analysis in a very small area while accurately confirming analysis points.
従来、数100Å以下の極微小領域のX線分析を
エネルギー分散形のX線分析装置を用いて行う場
合、視野対応を確認することが極めて重要で、そ
のため試料の走査透過像を観察して視野確認を行
つている。所が、通常の熱電子銃を備えた装置に
おける走査透過像の分解能は10〜20Åが限度であ
り、数Å程度の結晶格子像など極微細構造を確認
しながら、所望点のX線分析を行うことはできな
い。 Conventionally, when performing X-ray analysis of extremely small regions of several hundred angstroms or less using an energy dispersive X-ray analyzer, it is extremely important to confirm field-of-view correspondence. We are checking. However, the resolution of scanning transmission images in devices equipped with normal thermionic electron guns is limited to 10 to 20 Å, and it is difficult to perform X-ray analysis at a desired point while checking ultrafine structures such as crystal lattice images of several Å. It cannot be done.
一方、通常の透過電子顕微鏡では数Å程度の微
細構造を観察することは容易であるが、分析のた
めに電子線をスポツト状に集束すると、螢光板上
での視野が著じるしく小さくなり、像の観察、従
つて視野確認は不可能となる。 On the other hand, with a normal transmission electron microscope, it is easy to observe fine structures on the order of several angstroms, but when the electron beam is focused into a spot for analysis, the field of view on the fluorescent plate becomes significantly smaller. , it becomes impossible to observe the image and therefore confirm the field of view.
而して本発明は以上の点に鑑み、通常の透過電
子顕微鏡において、分析点の確認を行いながら極
微小領域のX線分析を可能にする装置を提供する
ことを目的とするものである。 SUMMARY OF THE INVENTION In view of the above points, it is an object of the present invention to provide an apparatus that enables X-ray analysis of extremely small areas while confirming analysis points in a normal transmission electron microscope.
第1図は本発明の一実施例を示す概略図であ
り、1は電子線を発生する電子銃である。この電
子銃より放射された電子線は第1集束レンズ2及
び第2集束レンズ3により集束され試料4上に照
射される。試料4を透過した電子線は対物レンズ
5により拡大結像され、その像は更に中間レンズ
6及び投影レンズ7により拡大されて螢光板8上
に終像を結ぶ。この螢光板の中央部には互いに電
気絶縁された電子線検出器9が設けてあり、該螢
光板中央部に流入する電子量が検出される。該検
出器9からの信号はスイツチ信号発生回路に送ら
れ、後述するスイツチング回路の制御信号生成に
用いられる。 FIG. 1 is a schematic diagram showing an embodiment of the present invention, and 1 is an electron gun that generates an electron beam. The electron beam emitted from this electron gun is focused by a first focusing lens 2 and a second focusing lens 3, and is irradiated onto a sample 4. The electron beam transmitted through the sample 4 is enlarged and imaged by an objective lens 5, and the image is further enlarged by an intermediate lens 6 and a projection lens 7 to form a final image on a fluorescent plate 8. Electron beam detectors 9 electrically insulated from each other are provided at the center of the fluorescent plate, and the amount of electrons flowing into the center of the fluorescent plate is detected. The signal from the detector 9 is sent to a switch signal generation circuit and used to generate a control signal for a switching circuit, which will be described later.
前記試料4の近傍にはエネルギー分散形のX線
検出器(半導体検出器)11が配置され、試料4
から発生するX線を検出する。この検出器からの
出力信号は適宜増幅された後スイツチング回路1
2を介して処理回路13に送られ所定の処号処理
がなされ、その出力信号はX線スペクトルを得る
ため表示装置、又は記録装置14に送られる。前
記スイツチング回路12はスイツチ信号発生回路
10からの信号によりON−OFF制御され、ON
の状態のときのみX線検出器11の出力信号を信
号処理回路に送り込む働きをする。15は前記第
2集束レンズ3の電流可変電源で、試料4上での
電子線が電子顕微鏡像観察に適した広がりをもつ
状態と分析に適した微小スポツトの状態に交互に
繰り返し可変する働きをする。 An energy dispersive X-ray detector (semiconductor detector) 11 is arranged near the sample 4, and
Detects X-rays generated from The output signal from this detector is appropriately amplified and then sent to the switching circuit 1.
2 to a processing circuit 13 for predetermined processing, and the output signal is sent to a display device or recording device 14 to obtain an X-ray spectrum. The switching circuit 12 is ON-OFF controlled by a signal from the switch signal generating circuit 10, and is turned ON/OFF.
It functions to send the output signal of the X-ray detector 11 to the signal processing circuit only in the state of . Reference numeral 15 denotes a variable current power supply for the second focusing lens 3, which functions to repeatedly vary the electron beam on the sample 4 between a spread state suitable for electron microscope image observation and a microspot state suitable for analysis. do.
以上の装置において、可変電源15により第2
図に示す如き電流を第2集束レンズ3に供給する
と試料4上での電子線断面の大きさが変化し、各
電流、、に対応して螢光板8上での観察視
野は第3図に示す如く→→→と変化す
る。このうちは電子顕微鏡像観察に適し、又
は微小分析に適したスポツトサイズとなつてい
る。検出器9からは電子線密度に対応した信号が
得られており、よりも、よりもの方が強
い信号となる。そこで、の状態になつたときの
信号強度になつたときのみ回路10がスイツチン
グ信号(パルス信号)を発し、スイツチング回路
12をONの状態にすると、丁度微小スポツトの
電子線が試料4に照射されているとき試料から発
生したX線の検出信号のみが検出器11から信号
処理回路13に送り込まれる。従つて、表示装置
14には螢光板8上で中央部に位置する像に対応
する極微小試料領域のX線スペクトルが表示され
る。視野探しは第3図の状態、つまり螢光板全
面に像が投影される状態において行い、所望とす
る試料領域が螢光板8の中央部に位置するように
試料4を移動すればよい。 In the above device, the second
When a current as shown in the figure is supplied to the second focusing lens 3, the size of the cross section of the electron beam on the sample 4 changes, and the observation field on the fluorescent plate 8 corresponds to each current as shown in Figure 3. As shown, it changes as →→→. Among these, the spot size is suitable for electron microscope image observation or micro analysis. A signal corresponding to the electron beam density is obtained from the detector 9, and the signal is stronger when the electron beam density is higher than when the electron beam density is higher. Therefore, only when the signal strength reaches the state shown in FIG. Only the detection signal of the X-rays generated from the sample is sent from the detector 11 to the signal processing circuit 13 during the test. Therefore, the display device 14 displays the X-ray spectrum of the extremely small sample area corresponding to the image located at the center on the fluorescent plate 8. The field of view search is performed in the state shown in FIG. 3, that is, in a state in which an image is projected onto the entire surface of the fluorescent plate, and the sample 4 is moved so that the desired sample area is located at the center of the fluorescent plate 8.
第4図は本発明の他の実施例を示す図で、第1
図と同符号は同一物を示してある。本実施例にお
いてはスイツチング回路12を第2集束レンズの
励磁可変に同期して制御するようになしたもの
で、そのために可変電源15から制御信号がスイ
ツチング回路12に供給されるようになしてあ
る。この実施例においては螢光板の中央部に電子
線検出器がないため、第5図に8aで示す如く、
螢光板中央部にマークを付けておき、所望とする
視野領域をこのマーク内に移動させるようにすれ
ば視野探しに便利である。 FIG. 4 is a diagram showing another embodiment of the present invention.
The same reference numerals as in the figure indicate the same parts. In this embodiment, the switching circuit 12 is controlled in synchronization with the variable excitation of the second focusing lens, and for this purpose a control signal is supplied to the switching circuit 12 from the variable power supply 15. . In this embodiment, since there is no electron beam detector in the center of the fluorescent plate, as shown at 8a in FIG.
It is convenient for finding the field of view by placing a mark in the center of the phosphor plate and moving the desired field of view within this mark.
以上詳述した構成となせば、通常の透過電子顕
微鏡像により極微細構造を観察しながら、その所
望とする点(領域)をX線分析点に設定すること
ができ、走査電子像観察機能を持たない電子顕微
鏡において分析点の視野対応が容易、且つ高精度
で行え、更に従来行い得なかつたような極微細構
造の視野探しが可能となつた。 With the configuration described in detail above, it is possible to set a desired point (area) as an X-ray analysis point while observing ultrafine structures using a normal transmission electron microscope image, and to use the scanning electron image observation function. The field of view of analysis points can be matched easily and with high precision using an electron microscope that does not have one, and furthermore, it has become possible to search for ultrafine structures in the field of view, which was previously impossible.
尚、上記実施例において、集束レンズの電流可
変波形は第2図に示す如きものに限られるもので
はなく、試料上での電子線の断面が電子顕微鏡像
観察に適した広がりをもつ状態と、微小X線分析
に適したスポツト状態とに切り換わればどのよう
な波形でも良い。又、電子線断面の可変を第2集
束レンズ3によつて行つたが、ビーム電流の調整
やX線分析点の大きさの関係で第1集束レンズ2
のみ、或いは第1集束レンズ2と第2集束レンズ
3を同時に可変するように構成することもでき
る。 In the above embodiments, the variable current waveform of the focusing lens is not limited to that shown in FIG. Any waveform may be used as long as it switches to a spot state suitable for micro X-ray analysis. In addition, although the cross section of the electron beam was varied by the second focusing lens 3, due to the adjustment of the beam current and the size of the X-ray analysis point, the first focusing lens 2
Alternatively, the first focusing lens 2 and the second focusing lens 3 may be changed simultaneously.
更に第1図の実施例においては螢光板8の中心
に検出器9を設けたが、中心部を除いた周辺部を
検出器として利用しても良い。この場合は検出電
流が零になつたときのみスイツチ信号発生回路1
0がパルス信号を発してスイツチング回路12を
ONの状態にすることは言うまでもない。 Further, in the embodiment shown in FIG. 1, the detector 9 is provided at the center of the fluorescent plate 8, but the peripheral portion other than the center may be used as a detector. In this case, the switch signal generation circuit 1 is activated only when the detected current becomes zero.
0 emits a pulse signal to activate the switching circuit 12.
It goes without saying that it must be turned on.
第1図は本発明の一実施例を示す概略図、第2
図及び第3図は第1図の装置を説明する為の図、
第4図及び第5図は本発明の他の実施例を示す概
略図である。
1:電子銃、2:第1集束レンズ、3:第2集
束レンズ、4:試料、5:対物レンズ、6:中間
レンズ、7:投影レンズ、8:螢光板、9:電子
線検出器、10:スイツチ信号発生回路、11:
X線検出器、12:スイツチング回路、13:信
号処理回路、14:表示装置、15:電流可変電
源。
FIG. 1 is a schematic diagram showing one embodiment of the present invention, and FIG.
Figures 3 and 3 are diagrams for explaining the device shown in Figure 1,
FIGS. 4 and 5 are schematic diagrams showing other embodiments of the present invention. 1: Electron gun, 2: First focusing lens, 3: Second focusing lens, 4: Sample, 5: Objective lens, 6: Intermediate lens, 7: Projection lens, 8: Fluorescent plate, 9: Electron beam detector, 10: Switch signal generation circuit, 11:
X-ray detector, 12: switching circuit, 13: signal processing circuit, 14: display device, 15: variable current power supply.
Claims (1)
レンズ、該集束レンズによつて集束されて試料4
に照射される電子線が試料面上で広がつた状態と
スポツト状態とを交互に自動的に繰り返すように
前記集束レンズに励磁電流を供給する可変電源1
5、前記電子線の照射により試料から発生するX
線を検出するX線検出器11、該X線検出器の出
力信号を信号処理する回路13、前記試料を透過
した電子を結像する結像レンズ系5,6,7、終
像が投影される蛍光板8、前記X線検出器と信号
処理回路との間に配置され試料上に照射される電
子線がスポツト状態になつた期間の前記検出器1
1の出力信号のみを選択的に前記信号処理回路1
3に導くための回路12から構成されることを特
徴とする分析電子顕微鏡。 2 前記回路12は前記蛍光板中央部に設けた電
子線検出器の出力信号をもとに制御される特許請
求の範囲第1項記載の分析電子顕微鏡。 3 前記回路12は前記可変電源に同期して制御
される特許請求の範囲第1項記載の分析電子顕微
鏡。[Claims] 1. A focusing lens for focusing the electron beam from the electron gun 1, which focuses the electron beam onto the sample 4.
a variable power source 1 that supplies an excitation current to the focusing lens so that the electron beam irradiated on the sample surface automatically alternates between a spread state and a spot state;
5. X generated from the sample by irradiation with the electron beam
An X-ray detector 11 that detects rays, a circuit 13 that processes the output signal of the X-ray detector, imaging lens systems 5, 6, and 7 that image the electrons that have passed through the sample, and a final image is projected. a fluorescent screen 8 disposed between the X-ray detector and the signal processing circuit, and the detector 1 during the period when the electron beam irradiated onto the sample is in a spot state;
The signal processing circuit 1 selectively outputs only the output signal of the signal processing circuit 1.
An analytical electron microscope characterized in that it is comprised of a circuit 12 for leading to a. 2. The analytical electron microscope according to claim 1, wherein the circuit 12 is controlled based on an output signal from an electron beam detector provided at the center of the fluorescent screen. 3. The analytical electron microscope according to claim 1, wherein the circuit 12 is controlled in synchronization with the variable power source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56028107A JPS57143253A (en) | 1981-02-27 | 1981-02-27 | Analytical electron microscope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56028107A JPS57143253A (en) | 1981-02-27 | 1981-02-27 | Analytical electron microscope |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57143253A JPS57143253A (en) | 1982-09-04 |
| JPS6322012B2 true JPS6322012B2 (en) | 1988-05-10 |
Family
ID=12239580
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56028107A Granted JPS57143253A (en) | 1981-02-27 | 1981-02-27 | Analytical electron microscope |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57143253A (en) |
-
1981
- 1981-02-27 JP JP56028107A patent/JPS57143253A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57143253A (en) | 1982-09-04 |
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