JPS63247367A - Ion beam sputtering device - Google Patents

Abstract

PURPOSE:To enable high-speed and large-area treatment, by arranging plural targets releasing sputtering grains by means of irradiation from an ion source into a shape of an inclined plane of a circular cone, etc., standing on the ion- source side as a base so as to converge the above-mentioned grains. CONSTITUTION:This ion beam sputtering device is composed of an ion source 1 producing plasma, a vacuum vessel 6 fitted to the above in a state held airtight, targets 7, and a substrate 8 on which a film is formed by means of the grains released from the targets 7. The above targets 7 release the grains sputtered by the irradiation of an ion beam from the ion source 1, and moreover, plural targets 7 are arranged so that they form a part of the inclined plane of a circular cone, etc., standing on the above-mentioned ion-source 1 side as a base.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an ion beam sputtering apparatus, and in particular, to a sputtering device that deposits sputtered particles on a substrate by irradiating an ion beam from an ion source onto a target. The ion beam sputtering family that forms .

[Prior art] A conventional ion beam sputtering apparatus is, for example, disclosed in Japanese Patent Application Laid-open No. 52
As described in Publication No. 140480, a method is used in which an ion beam from an ion source is irradiated onto a target, and particles scattered in all directions are attached to a plurality of substrates arranged to surround the target. was. This method is effective in using the target material without wasting it.

[Problem that the invention seeks to solve]

However, the density of sputtered particles generally decreases in inverse proportion to the square of the distance from the target, so the distance between the target and substrate must be larger than in the parallel plate type sputtering that is commonly used today. Ion beam sputtering, which does not have the same structure, has a problem in that the film formation rate is slower than that of parallel plate sputtering.

That is, the above-mentioned conventional technology does not consider means for increasing the film-forming rate, and even if the film produced using this technology exhibits good characteristics, the film-forming speed is slow and the processable area is small. There was a problem in that it was difficult to apply this technology in an actual manufacturing process.

The present invention has been made in view of the above points, and an object thereof is to provide an ion beam sputtering apparatus capable of processing a large area at high speed.

[Means for solving problems]

The above purpose is to sputter at least one material selected from metals, insulators, and semiconductors by ion irradiation from an ion source.
A plurality of targets that emit one particle are arranged to form at least a part of the slope of a cone or polygonal pyramid with the bottom facing the ion source side, and the particles sputtered from this target are focused at the center. This is achieved by

[Effect]

Normally, when a target is irradiated with an ion beam, particles of the target are emitted in all directions by a phenomenon called sputtering. However, most of the sputtered particles are emitted from the target perpendicularly, or at an angle from the perpendicular to the incident direction of the ion beam. When an ion beam is incident parallel to the central axis on multiple targets arranged so as to be part of the slope of a cone or polygonal pyramid with the ion source side as the bottom, most of the sputtered particles will fall into the cone or polygonal pyramid.
Or it flies towards the central axis of the polygonal pyramid. The density of sputtered particles decreases as they move away from the target, but the decrease in density can be compensated for by focusing the particles toward the central axis. If the substrate shares a central axis with the cone or polygonal pyramid constituting the target and is placed in a part of the cone or polygonal pyramid with a smaller base area, the speed will be faster than in the case of conventional ion beam sputtering equipment. It is possible to form a film of

〔Example〕

Hereinafter, the present invention will be described in detail based on embodiments of the drawings.

FIG. 1 shows an embodiment of the ion beam sputtering apparatus of the present invention.

As shown in the figure, an ion source 1 for irradiating a target that generates an ion beam is airtightly mounted in a vacuum container 6, and the vacuum container 6 is connected to a vacuum pump (not shown). Ion source 1 is.

A container 12 that also serves as an anode electrode, a filament 3 that emits thermoelectrons, and an N pole that creates a magnetic field to suppress the diffusion of plasma (ionized gas) generated by discharge.

A permanent magnet 2 with alternating south poles, an ion extraction electrode 5 with a large number of holes for extracting only ions from the plasma, and electrical connections between the container wall 12, which is at a high potential, and the vacuum container 6, which is at a ground potential. It consists of an insulator 4 for insulation. Further, a target 7 is arranged downstream of the ion source 1 in the vacuum vessel 6 so that the bottom surface forms part of the slope of a regular hexagonal pyramid facing the ion source 1.

A substrate 8 is placed on a part of the slope of another regular hexagonal pyramid that shares a central axis with this regular hexagonal pyramid. In this case, the base area of the regular hexagonal pyramid on which the target 7 is arranged is smaller than the base area of the regular hexagonal pyramid on which the substrate 8 is arranged. It can rotate around the central axis of the hexagonal pyramid.

FIG. 2 is for explaining the operation in this embodiment. First, the ion source 1 and vacuum container 6 are evacuated to about I.times.10@-6 Torr using a vacuum pump. Next, argon gas is supplied to the ion source 1, and the pressure on the side of the vacuum container 6 is set to about I.times.10@-4 Torr.

When a DC voltage of 50 V is applied between the filament 3 (cathode) and the container wall 12 while heating the filament 3 and emitting thermoelectrons, a discharge occurs and plasma is generated. Since the ion extraction electrode 5 has a large number of small holes in an annular shape, a hollow ion beam can be extracted. In our experiments, we were able to extract 2 kiloelectron volts of argon ions at a current density of 2.5 mA/ad (normal incidence equivalent). When this ion beam is irradiated onto a target 7 made of alumina, for example, most of the sputtered particles 11 sputtered (ejected) from the target 7 are ejected so as to be focused toward the central axis of the regular hexagonal pyramid mentioned above. The substrate 8 (for example, glass) is placed between the target 7 and the central axis, and the flying sputter particles 11 are attached thereto to form a film.

The manner in which particles sputtered from the target 7 are focused toward the central axis will be explained using FIG. For ease of understanding, a case will be described in which the slopes and central axes of the regular hexagonal pyramid formed by the target 7 and the regular hexagonal pyramid formed by the substrate 8 are substantially parallel. The same figure (A) shows the case of this example, the same figure (B
) respectively show the case of one target and one substrate in the conventional example.

In the figure, Ti and Si (i=1 to 6) represent the first target and substrate, respectively. In the case of FIG. 3(B), the film is formed using only the sputtered particles flying from the target T1 to the substrate S1, but in the case of FIG. 3(A), not only the target Tt but also T2 are used for the substrate S process. ．． A film is also formed by sputtered particles flying from TB. Therefore, the film is formed faster in the case of FIG. 3(A) than in the case of FIG. 3(B).

According to our experiments, when the target 7 and the substrate 8 are arranged on the slopes of a regular hexagonal pyramid as in this example, the film formation rate is about 65% higher than when the film is formed using one target and one substrate in the conventional example. was gotten. In the former case, the uniformity of the produced film was ±8%, which was comparable to the latter.

Note that the uniformity of the produced film can also be improved by rotating the substrate 8 around the central axis of the regular hexagonal pyramid mentioned above, or by rotating each of the six substrates 8 on its own axis. In addition, as a means to further improve uniformity,
There is also a method in which the substrate 8 is oscillated relative to the substrate support, or the entire substrate is moved up and down.

In this embodiment, films are formed on six substrates 8, but by further increasing the diameter of the ion source 1 and arranging the targets 7 accordingly, films can be formed on even more substrates 8 at the same time. Further, in this embodiment, the target 8 is planar, but even if a concave target is used, the effect of focusing sputtered particles is almost the same as that of a planar target.

As described above, according to this embodiment, particles sputtered from the target 7 can be focused.

This method has the advantage that a film can be formed on the substrate 8 at a higher speed than in the conventional example, and that a film can be formed on a large number of substrates at the same time. Also,
Among the sputtered particles, many of the particles that could not be attached to the substrate 8 return to other targets 7, so that the utilization efficiency of the targets 7 is better than in the conventional example. Furthermore, since a hollow ion beam is extracted from the ion source 1, there is an advantage that impurities are less likely to be mixed into the film due to sputtering in unnecessary areas.

In this example, the same material was used for the six targets, but a different target was placed on each target, the substrate was rotated around the central axis of the regular hexagonal pyramid mentioned above, and By stopping the process, a multilayer film can be formed.

FIG. 4 shows a second embodiment of the invention. In this embodiment shown in the figure, an ion source 1 consisting of a container wall 12, a permanent magnet 2, a filament 3, an insulator 4, and an ion beam extraction electrode 5 is attached to a vacuum container 6 connected to a vacuum pump. Inside, a target 7 is placed on a part of the slope of a regular hexagonal pyramid, and a substrate 8 is placed on a part of the slope of another regular hexagonal pyramid that shares the central axis with the target 7. This is the same as the embodiment shown in FIG. 1. The difference from the embodiment shown in FIG. 1 is that an ion source 10 for irradiating the substrate is mounted in a position facing the substrate 8 in an airtight manner.

The structure and operation of this ion source 10 for irradiating a substrate are the same as the ion source 1 for irradiating the target 7 described in the embodiment shown in FIG.

Next, the operation of this embodiment will be explained using FIG.

First, the particles 11 sputtered from the target 7 by irradiation with an argon beam of about 2 kiloelectron volts are transferred to the substrate 8.
Attach to. At the same time, the ion source 10 for substrate irradiation
For example, silicon is used as the target 7, and the ion beam generated by the ion source 10 for substrate irradiation is used to form a film by irradiating the substrate 8 with an ion beam generated at 3.
Silicon nitride is produced by using nitrogen molecular ions of about 00 electron volts.

The ion beam irradiated onto the substrate 8 may sputter a part of the film once attached to the substrate 8, but it also has the effect of encouraging particles that have reached the substrate 8 to move to the surface and aiding film formation. Since the film formation rate is determined by the number of sputtered particles 11 that reach the substrate 8 approximately per unit time, the film formation rate in this embodiment in which the sputtered particles are focused on the central axis of the regular hexagonal pyramid described above is the same as that in the conventional example. This is about 50% higher than in the case of one target and one substrate. Further, in this embodiment, it is easy to deposit a large number of films at the same time, as in the embodiment shown in FIG.

In this way, according to this embodiment, a film having the same or different composition as the target 7 can be formed at a higher speed than in the conventional example,
Moreover, there is an effect that films can be formed on a large number of substrates 8 at the same time. In addition, in this example, since an ion source that draws out a hollow beam as the ion [10] for irradiating the substrate is used, it is less likely that unnecessary areas will be sputtered and impurities will be generated, resulting in good film characteristics. It will be done. Note that when increasing the number of substrates 8 to be deposited at the same time, the ion source 1 for irradiating the substrates may be
Just make the diameter of 0 larger.

FIG. 6 shows a third embodiment of the present invention. In this embodiment shown in the figure, a container wall 12, a permanent magnet 2, a filament 3, an insulator 4. An ion source 1 consisting of an ion beam extraction electrode 5 is attached to a vacuum container 6 connected to a vacuum pump, and a target 7 is arranged in this vacuum container 6 so as to form part of the slope of a regular hexagonal pyramid. , is the same as the embodiment shown in FIG. The difference from the embodiment shown in FIG. 1 is that the substrate 8 is placed on the bottom surface of another regular hexagonal pyramid that shares a central axis with the regular hexagonal pyramid described above. In addition, the board 8
This embodiment is the same as the embodiment shown in FIG. 4 in that the ion source 10 for irradiating the substrate is mounted opposite to the embodiment shown in FIG.

In this embodiment, when the target 7, for example silicon, is irradiated with argon ions of 2 kiloelectron volts, the silicon sputter particles fly toward the central axis of the regular hexagonal pyramid described above.

In the case of this embodiment, the density of particles flying from one target 7 to the substrate 8 is smaller than when both targets 7 are arranged almost parallel, but since sputtered particles 11 are flying from six targets 7, , ion source 1 for substrate irradiation
When nitrogen ions are irradiated from zero, the film formation rate of silicon nitride is about three times that of the conventional case of one target and one substrate.

As described above, according to this embodiment, by focusing the particles sputtered from the target 7 on the central axis, it is possible to form a film at high speed.

FIG. 7 shows a fourth embodiment of the invention. In this embodiment shown in the figure, the ion source 1 is mounted in a vacuum container 6, and the target 7 is arranged in the vacuum container 6 so as to form part of the slope of a regular hexagonal pyramid.

This is the same as the embodiment shown in FIG. The difference from the embodiment shown in Fig. 1 is that the ion source for target irradiation is not an ion source that emits a hollow beam, but six small ion sources 13 that generate circular beams arranged on the circumference. The points are arranged at approximately equal intervals.

In the configuration of this embodiment, when the alumina target 7 is irradiated with argon ions of 2 kiloelectron volts and a film is formed on the glass substrate 8, compared to the conventional case of one target and one substrate, An alumina film deposition rate that was about 55% higher was obtained.

However, the utilization efficiency of the target 7 is slightly lower than that of the embodiment shown in FIG.

This embodiment also has the effect that by focusing the particles sputtered from the target 7 on the central axis, it is possible to form a film on the substrate 8 at high speed and to form films on a large number of substrates at the same time. Note that it is also possible to change the material of the six targets 7 in this embodiment. At this time, different ion energies and ion currents are extracted from each of the ion sources 13 that emit circular beams, and the substrate 8 is rotated around the central axis to form a multilayer film with the thickness of each layer well controlled. Can be generated.

In the above embodiment, the target 7 and the substrate 8.

Although the case where it is arranged in a part of a regular hexagonal pyramid has been described, the same effect can be obtained even if it is arranged in a part of a cone instead of a regular hexagonal pyramid. Further, ion sources 1, 13 . Although the explanation has been made using an electron impact type ion source as the ion source 10 for irradiating the substrate, similar effects can be obtained by using a high frequency ion source or a microwave ion source that generates plasma by high frequency discharge or microwave discharge.

〔Effect of the invention〕

According to the ion beam sputtering apparatus of the present invention described above, the target that emits particles sputtered by ion irradiation from the ion source is arranged so that it forms at least a part of the slope of a cone or polygonal pyramid whose bottom face is on the ion source side. Since a plurality of ion beam sputtering devices are arranged in the ion beam sputtering device, the particles sputtered from the target can be focused at the center, so that an ion beam sputtering device capable of processing a large area at high speed can be obtained.

[Brief explanation of the drawing]

FIG. 1 is a perspective view showing an embodiment of the ion beam sputtering apparatus of the present invention, FIG. 2 is a sectional view of FIG. 1, and FIG.
Figure (A) is a diagram showing how particles sputtered from a target are focused in this embodiment, Figure 3 (B) is a diagram showing how sputtered particles are focused in a conventional example, and Figure 4. 5 is a cross-sectional view of the second embodiment of the present invention, FIG. 5 is a cross-sectional view of FIG. 4, FIG. 6 is a perspective view of the third embodiment of the present invention, and FIG. FIG. 7 is a perspective view showing a fourth embodiment of the present invention in cross section of a vacuum container. 1.13... Ion source for target irradiation, 6...
Vacuum container, 7... Target, 8... Substrate, 10.
... Board figure 1! 4th Li7I! Fifth mouth! 60 Figure 7

Claims (1)

[Claims] 1. An ion source that generates plasma inside, a vacuum container that is attached to the ion source while maintaining airtightness, and a vacuum container that is placed in the vacuum container and that receives the ion beam from the ion source. In an ion beam sputtering apparatus equipped with a target that emits sputtered particles by irradiation and a substrate on which a film is generated by the particles from the target, the target is composed of a plurality of targets, and each target is located on the side of the ion source. An ion beam sputtering apparatus characterized in that the ion beam sputtering apparatus is arranged so as to be formed by at least a part of the slope of a cone or polygonal pyramid having a bottom surface. 2. The ion source is
The ion beam sputtering apparatus according to claim 1, wherein the ion beam sputtering apparatus is an electron impact type ion source in which plasma generated by discharge is confined by a magnetic field created by a permanent magnet or an electromagnet. 3. The ion beam sputtering apparatus according to claim 1, wherein a high frequency discharge or a microwave discharge is used as means for generating plasma in the ion source. 4. An ion source that generates plasma inside, a vacuum container that is attached to the ion source while maintaining airtightness, and particles that are placed in the vacuum container and are sputtered by irradiation with an ion beam from the ion source. In an ion beam sputtering apparatus comprising a target that emits ions, and a substrate on which a film is generated by particles from the target, the target includes a plurality of targets, each of which has a conical shape with the bottom facing the ion source side; Alternatively, an ion beam sputtering apparatus characterized in that a plurality of the substrates are arranged so as to be formed by at least a part of a slope of a polygonal pyramid, and a plurality of the substrates are arranged facing each of the targets. 5. The substrate is another cone that is closer to the ion source than the slope of the cone or polygonal pyramid constituting the target and has a smaller base area than the cone or polygonal pyramid of the target;
The ion beam sputtering apparatus according to claim 4, wherein the ion beam sputtering apparatus is arranged to form at least a part of the slope or the bottom of a polygonal pyramid. 6. An ion source that generates plasma inside, a vacuum container that is attached to the ion source while maintaining airtightness, and particles that are placed in the vacuum container and are sputtered by irradiation with an ion beam from the ion source. In an ion beam sputtering apparatus, the ion beam sputtering apparatus is equipped with a target that emits ions, and a substrate on which a film is generated by particles from the target, wherein the target includes a plurality of targets, each of which has a conical shape with the bottom facing the ion source side; Alternatively, an ion beam sputtering apparatus characterized in that the substrate is arranged so as to be formed by at least a part of a slope of a polygonal pyramid, and the substrate is arranged substantially on the bottom surface of the target. 7. An ion source that generates plasma inside, a vacuum container that is attached to the ion source while maintaining airtightness, and particles that are placed in the vacuum container and are sputtered by irradiation with an ion beam from the ion source. In an ion beam sputtering apparatus, the ion beam sputtering apparatus is equipped with a target that emits ions, and a substrate on which a film is formed by particles from the target. The ion source is arranged to be formed by at least a part of the slope of a polygonal pyramid, and an ion source for irradiating the substrate is provided in the vacuum container separately from an ion source for irradiating the target. Ion beam sputtering equipment. 8. The ion beam according to claim 7, wherein the substrate is arranged to face a target, and an ion source capable of generating a hollow ion beam is used as an ion source for irradiating the substrate. Beam sputtering equipment. 9. An ion source that generates plasma inside, a vacuum container that is attached to the ion source while maintaining airtightness, and particles that are placed in the vacuum container and are sputtered by irradiation with an ion beam from the ion source. In an ion beam sputtering apparatus comprising a target that emits ions, and a substrate on which a film is generated by particles from the target, the target is composed of a plurality of targets so that at least the side irradiated with ions from the ion source is open. An ion beam sputtering apparatus characterized in that the substrate is placed on the opening side of the target. 10. An ion source that generates plasma inside, a vacuum container attached to the ion source while maintaining airtightness, and particles placed in the vacuum container and sputtered by irradiation with an ion beam from the ion source. A target that emits
an ion beam sputtering apparatus comprising a substrate on which a film is formed by particles from the target, the target being sputtered and released by irradiating the target with an ion beam from the ion source; An ion beam sputtering apparatus characterized in that a plurality of ion beam sputtering devices are arranged so as to focus substantially near the central axis of the ion beam. 11. An ion source that generates plasma inside, a vacuum container that is installed in an airtight manner with the ion source, and an ion source that is placed in the vacuum container and that sputters particles by irradiation with an ion beam from the ion source. In an ion beam sputtering apparatus equipped with an emitting target and a substrate on which a film is formed by particles from the target, the targets are made of a plurality of different materials, and each target has a bottom surface facing the ion source side. An ion beam sputtering apparatus characterized in that the ion beam sputtering apparatus is arranged so as to be formed by at least a part of the slope of a cone or polygonal pyramid.