JPS63262573A - 導通ネツトワークの検査方法 - Google Patents

導通ネツトワークの検査方法

Info

Publication number
JPS63262573A
JPS63262573A JP63085554A JP8555488A JPS63262573A JP S63262573 A JPS63262573 A JP S63262573A JP 63085554 A JP63085554 A JP 63085554A JP 8555488 A JP8555488 A JP 8555488A JP S63262573 A JPS63262573 A JP S63262573A
Authority
JP
Japan
Prior art keywords
network
point
energy
irradiated
particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63085554A
Other languages
English (en)
Japanese (ja)
Inventor
マチアス、ブルンナー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS63262573A publication Critical patent/JPS63262573A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/305—Contactless testing using electron beams
    • G01R31/306—Contactless testing using electron beams of printed or hybrid circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Maintenance And Management Of Digital Transmission (AREA)
  • Data Exchanges In Wide-Area Networks (AREA)
  • Two-Way Televisions, Distribution Of Moving Picture Or The Like (AREA)
  • Testing Electric Properties And Detecting Electric Faults (AREA)
JP63085554A 1987-04-10 1988-04-08 導通ネツトワークの検査方法 Pending JPS63262573A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3712176.6 1987-04-10
DE3712176 1987-04-10

Publications (1)

Publication Number Publication Date
JPS63262573A true JPS63262573A (ja) 1988-10-28

Family

ID=6325322

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63085554A Pending JPS63262573A (ja) 1987-04-10 1988-04-08 導通ネツトワークの検査方法

Country Status (7)

Country Link
US (1) US4841242A (de)
EP (1) EP0285896B1 (de)
JP (1) JPS63262573A (de)
AT (1) ATE109570T1 (de)
CA (1) CA1277773C (de)
DE (1) DE3850900D1 (de)
ES (1) ES2056847T3 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4943769A (en) * 1989-03-21 1990-07-24 International Business Machines Corporation Apparatus and method for opens/shorts testing of capacitively coupled networks in substrates using electron beams
US4978908A (en) * 1989-03-22 1990-12-18 Texas Instruments Incorporated Scanning electron microscope based parametric testing method and apparatus
US5159752A (en) * 1989-03-22 1992-11-03 Texas Instruments Incorporated Scanning electron microscope based parametric testing method and apparatus
EP0402499A1 (de) * 1989-06-13 1990-12-19 Siemens Aktiengesellschaft Verfahren zur Prüfung einer Leiterplatte mit einer Teilchensonde
EP0429739B1 (de) * 1989-11-28 1993-10-27 International Business Machines Corporation Verfahren zur Inspektion von Durchkontakt-Stiften in integrierten Schaltungspackungen mittels Photoemission
US5039938A (en) * 1990-06-21 1991-08-13 Hughes Aircraft Company Phosphor glow testing of hybrid substrates
EP0490154A3 (en) * 1990-12-07 1992-09-30 Siemens Aktiengesellschaft Method for determining the charge of a sample region
US5258706A (en) * 1991-10-16 1993-11-02 Siemens Aktiengesellschaft Method for the recognition of testing errors in the test of microwirings
US5301012A (en) * 1992-10-30 1994-04-05 International Business Machines Corporation Optical technique for rapid inspection of via underetch and contamination
DE4305672A1 (de) * 1993-02-24 1994-08-25 Integrated Circuit Testing Verfahren und Vorrichtung zum Testen von Netzwerken auf Kurzschlüsse und/oder Unterbrechungen
EP1917251B1 (de) 2005-08-21 2013-04-03 Abbott GmbH & Co. KG 5-ring-heteroaromaten-verbindungen und ihre verwendung als bindungspartner für 5-ht5-rezeptoren

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5618424A (en) * 1979-07-23 1981-02-21 Nippon Telegr & Teleph Corp <Ntt> Apparatus for electron beam lithography
US4417203A (en) * 1981-05-26 1983-11-22 International Business Machines Corporation System for contactless electrical property testing of multi-layer ceramics
JPS60741A (ja) * 1983-06-16 1985-01-05 Toshiba Mach Co Ltd 電子線露光方法
JPS60130121A (ja) * 1983-12-16 1985-07-11 Toshiba Mach Co Ltd 電子ビ−ム露光方法
JPS60173834A (ja) * 1984-02-14 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> マルチ荷電ビ−ム露光装置
DE3579380D1 (de) * 1984-06-01 1990-10-04 Siemens Ag Verfahren zur elektrischen pruefung von mikroverdrahtungen mit hilfe von korpuskularsonden.
US4985681A (en) * 1985-01-18 1991-01-15 Siemens Aktiengesellschaft Particle beam measuring method for non-contact testing of interconnect networks
US4707609A (en) * 1985-01-31 1987-11-17 Canon Kabushiki Kaisha Exposure apparatus and method
US4755748A (en) * 1985-06-05 1988-07-05 Bell Communications Research, Inc. Method and apparatus for analyzing semiconductor devices using charge-sensitive electron-beam-injected-carrier microscopy
US4733174A (en) * 1986-03-10 1988-03-22 Textronix, Inc. Circuit testing method and apparatus

Also Published As

Publication number Publication date
CA1277773C (en) 1990-12-11
DE3850900D1 (de) 1994-09-08
EP0285896A2 (de) 1988-10-12
EP0285896B1 (de) 1994-08-03
ATE109570T1 (de) 1994-08-15
EP0285896A3 (en) 1990-08-29
ES2056847T3 (es) 1994-10-16
US4841242A (en) 1989-06-20

Similar Documents

Publication Publication Date Title
US4415851A (en) System for contactless testing of multi-layer ceramics
US8134125B2 (en) Method and apparatus of an inspection system using an electron beam
US7602197B2 (en) High current electron beam inspection
JPH0562700B2 (de)
JPH0682718B2 (ja) 電子デバイスの試験装置およびその使用方法
JPH03135778A (ja) 電気回路の開路／短絡試験を非接触に行う方法及び装置
JPS63262573A (ja) 導通ネツトワークの検査方法
EP0389397A3 (de) Apparat zum Prüfen von Unterbrechungen/Kurzschlüssen bei kapazitiv gekoppelten Netzen in Substraten unter Verwendung von Elektronenstrahlen
JPH0325384A (ja) プリント板試験方法
US20080296496A1 (en) Method and apparatus of wafer surface potential regulation
US7633303B2 (en) Semiconductor wafer inspection apparatus
US7183546B2 (en) System and method for voltage contrast analysis of a wafer
JP2959529B2 (ja) 荷電粒子ビームによる半導体ウエハー検査装置及び検査方法
JP3343421B2 (ja) 荷電粒子ビーム装置
JP3859446B2 (ja) 半導体基板検査装置および半導体基板検査方法
RU2613571C1 (ru) Способ контроля сплошности диэлектрического покрытия на элементах радиоэлектронной аппаратуры
JP2791726B2 (ja) 回路網領域の荷電状態検知方法
JPH0682720B2 (ja) 電子デバイスの試験装置およびその使用方法
JP2917948B2 (ja) Ｌｓｉ短絡不良検出方法
Hohn et al. and THP Chang
JPH0654648B2 (ja) パタン寸法測定方法
JPS62278466A (ja) 導通検査方法
El-Kareh Testing printed circuit boards and MCMs with electron beams
JP2001165876A (ja) 検査装置および検査方法
JPH01199172A (ja) 電子ビームによる導通検査方法