JPS63308355A - Resin sealed semiconductor device - Google Patents

Abstract

PURPOSE:To prevent the moisture absorption and moisture permeation from the sealing resin surface into the inside by integrally burying non-moisture permeable or difficultly moisture permeable material layers opposite to both sides of a semiconductor element in the sealing resin. CONSTITUTION:There are provided non-moisture permeable material layers 7, 7 of thin metallic plates for instance, which are integrally buried and similarly sealed within a sealing resin 6 so as to be opposed to both sides of a semiconductor element 2. Accordingly, the moisture absorbed or transmitted from the surface of the sealing resin 6 is shielded by the buried non-moisture permeable material layers 7, 7. With this, the penetration into the inside or into the surface part of the semiconductor element 2 is prohibited, or the penetration path becomes longer, whereby the penetration can sufficiently be delayed in time.

Description

[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a resin-sealed semiconductor device, and more particularly, to a resin-sealed semiconductor device that can eliminate moisture intrusion from the outside. This is related to improvements.

[Conventional technology]

112! of this type of resin-sealed semiconductor device according to the conventional example!
i! The configuration is shown in Figure 2.

That is, in the conventional configuration shown in FIG. 2, reference numeral 1 indicates a resin-sealed semiconductor device, 2 indicates a semiconductor element fixedly supported by an island 3 such as a metal frame, 4 indicates an external lead terminal, and 5 indicates a semiconductor element 2. A wire 6 connects each electrode part of the external lead terminal 4 with the base end of the external lead terminal 4, and 6 is a sealing resin that insulates and protects the external lead terminal 4 from the outside, except for the lead tip part. There are resin materials, usually epoxy resin-based, and generally organic polymers and inorganic fillers.

[Problem that the invention seeks to solve]

However, in conventional resin-encapsulated semiconductor devices constructed in this way, an organic polymer material is used for the encapsulation resin that encapsulates the semiconductor element, which inevitably has poor hygroscopicity and moisture permeability. Because of this, moisture seeping into the interior from the surface of the sealing resin may cause corrosion to the aluminum wiring on the element surface, or infrared reflow after moisture absorption.
There has been a problem in that there is a risk of changes in semiconductor properties due to rapid vaporization of moisture due to heat stress during PS operation, or failures such as destruction of the device constituent materials themselves.

The present invention was made to solve these conventional problems, and its purpose is to make it difficult for moisture to be absorbed or permeated from the surface of the sealing resin of the semiconductor element into the interior. An object of the present invention is to provide a resin-sealed semiconductor device of this type.

[Means for solving problems]

In order to achieve the above object, a resin-sealed semiconductor device according to the present invention connects each electrode of a semiconductor element fixedly supported on an island and the base end of an external lead terminal with a wire, and also connects the base end of an external lead terminal with a wire. In a resin-sealed semiconductor device in which terminals except for the lead ends are sealed with resin, a moisture-impermeable or hardly moisture-permeable material layer is provided on at least the front and back surfaces of the semiconductor element inside the sealing resin. are buried in one piece.

[For production]

That is, in the present invention, in the resin-sealed semiconductor device, a moisture-impermeable or hardly moisture-permeable material layer is integrally embedded inside the sealing resin facing at least both the front and back surfaces of the semiconductor element, so that the sealing The infiltration of moisture from the surface of the resin into the interior of the sealed semiconductor element can be blocked by this moisture-impermeable or hardly moisture-permeable material layer, and the influence of infiltrated moisture on the encapsulated semiconductor element can be inhibited or sufficiently It can be delayed.

〔Example〕

Hereinafter, one embodiment of a resin-sealed semiconductor device according to the present invention will be described in detail with reference to FIG.

FIG. 1 is a cross-sectional view schematically showing the general structure of the apparatus of this embodiment. In the apparatus of this embodiment shown in FIG. 1, the same reference numerals as in the conventional apparatus of FIG. ing.

That is, in the device of the embodiment shown in FIG. 1 as well, reference numeral 1 indicates a resin-sealed semiconductor mat, 2 indicates a semiconductor element fixedly supported on an island 3 such as a metal frame, 4 indicates an external lead terminal, and 5 indicates a semiconductor element. A wire 8 connects each electrode of 2 and the base end of the external lead terminal 4, and 8 is a sealing resin that insulates and protects the external lead terminal 4 from the outside, except for the lead tip. 7.7 is a moisture-impermeable material such as a thin metal plate, which is integrally embedded inside the sealing resin 6 and similarly sealed so as to face both the front and back sides of the semiconductor element 2. It is a layer.

Therefore, in the case of this embodiment configuration, moisture absorbed or permeated from the surface of the sealing resin 8 is blocked by the buried moisture-impermeable material layer 7.7, and does not penetrate into the interior thereof, that is, Is penetration into the surface portion of the semiconductor element 2 prevented?
Alternatively, the infiltration path becomes longer, and the infiltration can be sufficiently delayed in time, making it difficult to reach the same surface, and as a result, corrosion of aluminum wiring due to infiltrated moisture, which was seen in the conventional case, and moisture absorption This eliminates the risk of malfunctions such as changes in semiconductor characteristics and destruction of the device configuration due to heat stress during later infrared reflow and VPS operations.

In the above embodiment, a moisture-impermeable material layer made of a thin metal plate or the like is integrally embedded inside the sealing resin facing at least both the front and back surfaces of the semiconductor element, but this moisture-impermeable material layer is Alternatively, even if a layer of a material with low moisture permeability such as a polymer film is used, the same functions and effects as in C can be obtained.

〔Effect of the invention〕

As described in detail above, according to the present invention, each electrode of a semiconductor element fixedly supported on an island is connected to the base end of an external lead terminal by a wire, and the base end of the external lead terminal is connected by a wire. In a resin-sealed semiconductor device in which these are resin-sealed, at least both the front and back surfaces of the semiconductor element are opposed to each other inside the sealing resin, and are non-moisture-permeable.

Alternatively, since the structure is made by integrally embedding a layer of a material with low moisture permeability, the infiltration of moisture from the surface of the sealing resin into the interior of the sealed semiconductor element is blocked by the layer of material with low moisture permeability or low moisture permeability. It is possible to prevent the influence of infiltrated moisture on the sealed semiconductor element, or to sufficiently delay the infiltrated moisture from reaching the element surface, thereby preventing corrosion of surface aluminum wiring, infrared reflow after moisture absorption, and VPS. It has excellent features such as being able to eliminate failures such as changes in semiconductor characteristics and destruction of device configuration due to thermal stress during operation, etc., and is structurally relatively simple and easy to implement. .

[Brief explanation of drawings]

FIG. 1 is a sectional view schematically showing the general structure of an embodiment of a resin-sealed semiconductor device according to the present invention, and
FIG. 2 is a sectional view schematically showing the general structure of the conventional device. 1...Resin-sealed semiconductor device, 2...Semiconductor element, 3...Island, 4...External lead terminal. 5...Wire, 6...Sealing resin, 7...
Non-permeable material layer.

Claims (3)

[Claims] (1) Resin sealing in which each electrode of a semiconductor element fixedly supported on an island is connected to the base end of an external lead terminal by a wire, and these are sealed with resin except for the lead end of the external lead terminal. type semiconductor device, characterized in that a moisture-impermeable or hardly moisture-permeable material layer is integrally embedded inside the sealing resin so as to face at least both the front and back surfaces of the semiconductor element. Device. (2) The resin-sealed semiconductor device according to claim 1, wherein a thin metal plate is used for the moisture-impermeable material layer. (3) The resin-sealed semiconductor device according to claim 1, wherein a polymer film is used for the hardly moisture-permeable material layer.