JPS6334630B2 - - Google Patents

Info

Publication number
JPS6334630B2
JPS6334630B2 JP56017773A JP1777381A JPS6334630B2 JP S6334630 B2 JPS6334630 B2 JP S6334630B2 JP 56017773 A JP56017773 A JP 56017773A JP 1777381 A JP1777381 A JP 1777381A JP S6334630 B2 JPS6334630 B2 JP S6334630B2
Authority
JP
Japan
Prior art keywords
layer
current
carrier
emitter
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56017773A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57132370A (en
Inventor
Shigeru Myagawa
Susumu Yasaka
Shigenori Yakushiji
Yasushi Yamanaka
Akio Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56017773A priority Critical patent/JPS57132370A/ja
Publication of JPS57132370A publication Critical patent/JPS57132370A/ja
Publication of JPS6334630B2 publication Critical patent/JPS6334630B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/043—Manufacture or treatment of planar diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 

Landscapes

  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP56017773A 1981-02-09 1981-02-09 Low-loss diode Granted JPS57132370A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56017773A JPS57132370A (en) 1981-02-09 1981-02-09 Low-loss diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56017773A JPS57132370A (en) 1981-02-09 1981-02-09 Low-loss diode

Publications (2)

Publication Number Publication Date
JPS57132370A JPS57132370A (en) 1982-08-16
JPS6334630B2 true JPS6334630B2 (fr) 1988-07-11

Family

ID=11953027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56017773A Granted JPS57132370A (en) 1981-02-09 1981-02-09 Low-loss diode

Country Status (1)

Country Link
JP (1) JPS57132370A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59105324A (ja) * 1982-12-09 1984-06-18 Toshiba Corp 半導体装置の製造方法
JPS59189679A (ja) * 1983-04-13 1984-10-27 Hitachi Ltd ダイオ−ド

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5317280A (en) * 1976-08-02 1978-02-17 Hitachi Ltd Production of semiconductor element

Also Published As

Publication number Publication date
JPS57132370A (en) 1982-08-16

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