JPS6335437A - Production of enamel base - Google Patents
Production of enamel baseInfo
- Publication number
- JPS6335437A JPS6335437A JP17941186A JP17941186A JPS6335437A JP S6335437 A JPS6335437 A JP S6335437A JP 17941186 A JP17941186 A JP 17941186A JP 17941186 A JP17941186 A JP 17941186A JP S6335437 A JPS6335437 A JP S6335437A
- Authority
- JP
- Japan
- Prior art keywords
- enamel
- parts
- particle size
- weight
- inorganic filler
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 210000003298 dental enamel Anatomy 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000002245 particle Substances 0.000 claims abstract description 27
- 239000000843 powder Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000011256 inorganic filler Substances 0.000 claims abstract description 10
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 10
- 239000000203 mixture Substances 0.000 claims abstract 4
- 239000000758 substrate Substances 0.000 claims description 17
- 238000010304 firing Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000000945 filler Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000001962 electrophoresis Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 2
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000009503 electrostatic coating Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
- C03C14/004—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of particles or flakes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Dispersion Chemistry (AREA)
- Glass Compositions (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は印刷配線板用基板として便用さｎるほうろう基
板の製造法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for manufacturing an enameled substrate which is conveniently used as a substrate for printed wiring boards.
（従来の技術）
ほうろう基板は、金属芯上にほうろう釉薬を施釉し、焼
成して製造している。(Prior Art) Enamel substrates are manufactured by applying enamel glaze onto a metal core and firing the enamel glaze.
従来、ほうろうの施釉ｖｃｈｓ、粒度分布のピークが３
０へ５０μｍ８度のものが使わ几でいる。Conventionally, the peak of the particle size distribution of enamel glazed vchs is 3.
0 to 50 μm and 8 degrees are used.
又スルーホールエッヂ部コーナーのつｌ−Ｊわり向上の
ために高融点無機物フィラーを釉薬１００部（重量部、
以下同じ）に対して最大２０部程度混合する等の方法が
ある。In addition, 100 parts (by weight,
There are methods such as mixing up to 20 parts of the total amount (the same applies hereinafter).
（発明が解決しようとする問題点）
しかし、前記の方法で作成したほうろう配線板は、ほう
ろう層の耐電圧的に十分な信頼性があるとはいい難かっ
た。(Problems to be Solved by the Invention) However, the enamel wiring board produced by the above method cannot be said to have sufficient reliability in terms of withstand voltage of the enamel layer.
本発明は、従来の非晶質系釉薬におけるほうろう基板に
おいて比較的大きなボイドを抑制すること、およびスル
ーホール部やエツジ部コーナーでも充分なほうろう層膜
厚を得ることにより、特別な釉薬を用いることなく、ス
ルーホーＡ−を含め基板表面と金属芯間の耐′電圧に優
ｎるほうろう基板の製造法を提供するものである。The present invention makes it possible to use a special glaze by suppressing relatively large voids in enamel substrates in conventional amorphous glazes, and by obtaining sufficient enamel layer thickness even in through-holes and edge corners. However, the present invention provides a method for manufacturing an enameled substrate including a through-hole A-, which has excellent voltage resistance between the substrate surface and the metal core.
（問題点を解決するための手段〉
ほうろう基板の耐電圧の低下原因は、ほうろう層中に存
在する５０μｍ以上の径のボイドの存在と端縁コーナ一
部やスルーホール部のコーナーのほうろう層のやせであ
る。・第２図に従来のほうろう基板の断面図を示した。(Means for solving the problem) The cause of the decrease in the withstand voltage of the enamel substrate is the presence of voids with a diameter of 50 μm or more existing in the enamel layer and the porosity of the enamel layer at some edge corners and through-hole corners. It is thin. - Figure 2 shows a cross-sectional view of a conventional enamel substrate.
第２図に於て、１は金属芯、２はほうろう層、３はボイ
ド、４は端縁コーナ一部である。ほうろう層中のボイド
と施釉粒子の粒径との相関を求めたところ強い相関があ
ることがわかり、その中で特に溶融成分であるほうろう
釉薬微粉の粒径と相関が強いことを見い出した。また、
施釉粉中に占める無機物フィラーの量を増して−くとコ
ーナ一部のつきまわりが上昇するが、−力金属芯とほう
ろう層との密着性の低下や表面平滑性の低下を招く問題
が発生する。施釉粒子の粒径及び混合するフィラーの量
を検討したところ、平面部、コーナ一部ともに耐電圧の
すぐｎた基板を得るためには、焼成時に溶融するほうろ
う釉薬微粉の粒径２０μｍ以上のものが１０重量％以下
であり、焼成時に非溶融性の無機物フィラー七ほうろう
釉薬微粉１００部に対して４０〜８０部混甘するもせを
用いｎば、ほうろう膚の耐電圧が１ｋｖ以上のものを得
らｎることかわかった。In FIG. 2, 1 is a metal core, 2 is an enamel layer, 3 is a void, and 4 is a part of an edge corner. When we determined the correlation between the voids in the enamel layer and the particle size of the glazed particles, we found that there was a strong correlation, and we found that there was a particularly strong correlation with the particle size of the enamel glaze fine powder, which is a molten component. Also,
Increasing the amount of inorganic filler in the glazing powder increases the throwing power at some corners, but this causes problems such as decreased adhesion between the metal core and the enamel layer and decreased surface smoothness. do. After examining the particle size of the glazed particles and the amount of filler to be mixed, we found that in order to obtain a board with a high withstand voltage on both the flat and corner parts, the particle size of the enamel glaze fine powder that melts during firing should be 20 μm or more. is 10% by weight or less, and if 40 to 80 parts of non-melting inorganic filler is mixed with 100 parts of seven-enamel glaze fine powder during firing, an enamel skin with a withstand voltage of 1 kV or more can be obtained. I found out that it is.
釉薬微粉の粒径２０μｍ以上のものが１０重量％を超え
ると、ほうろう層中のボイドに５０μｍ以上の粒径のも
のが存在するよう忙なり、耐電圧の低下をもたらす。又
無機物フィラーの混合比が４０部未満の壜台コーナ一部
のつきまわりが５０％より低下し、コーナ一部の耐電圧
を確保できない。また、混合比が８０部を超えると、ほ
うろう層の表面平滑性が得らｎず、又、金属芯との密着
力も十分ではなかった。この時混せしうるフィラーとし
ては、５ｉＯａ） Ａｊｘ０３．５ｉＺｒＯａ、 Ｔｉ
（ｈ等がある。また、ほうろう釉薬微粉の粒径を本発明
の範囲とした時、フィラーの粒径を工２０μｍ以上のも
のを５０重′ｊ１％以下にしなけｎば、先の効果は得ら
ｎなかった。If the amount of glaze fine powder with a particle size of 20 μm or more exceeds 10% by weight, particles with a particle size of 50 μm or more will be present in the voids in the enamel layer, resulting in a decrease in withstand voltage. In addition, when the mixing ratio of the inorganic filler is less than 40 parts, the throwing power of a part of the corner of the bottle base decreases to less than 50%, and the withstand voltage of the part of the corner cannot be ensured. Further, when the mixing ratio exceeds 80 parts, the surface smoothness of the enamel layer could not be obtained, and the adhesion to the metal core was also insufficient. Fillers that can be mixed at this time include 5iOa) Ajx03.5iZrOa, Ti
(h, etc.) Also, when the particle size of the enamel glaze fine powder is within the range of the present invention, the above effect cannot be obtained unless the filler particle size is 50% by weight or less if the particle size is 20 μm or more. There was no such thing.
また、施釉法とじてを工電気泳動法、静電塗装法、浸漬
法等の中で本発明に最も適しているのは電気泳動法であ
るが限定するものではない。Furthermore, among the glazing methods, electrophoresis, electrostatic coating, dipping, etc., the electrophoresis method is most suitable for the present invention, but the method is not limited thereto.
また、施釉後の焼成温度は、フィラーを含まない時の使
用釉の焼成温度エリも２０℃〜５０℃高い温度で焼成す
ることが好ましい。そうすることにより充分な金属芯と
ほうろう層の密着性が得らｎるとともに十分な表面平滑
性を得らｎる。焼成時間は５分から１０分が望ましいが
限定するものではない。Further, the firing temperature after glazing is preferably 20°C to 50°C higher than the firing temperature of the glaze used when no filler is included. By doing so, sufficient adhesion between the metal core and the enamel layer can be obtained, as well as sufficient surface smoothness. The baking time is preferably 5 minutes to 10 minutes, but is not limited to this.
ｍ１図に本発明で作成したほうろう基板の断面図全示す
。ほうろう層全体に５〜５０μｍ８度のボイドが存在す
るが５０μｍ径以よ０大きなボイドがなく、またコーナ
一部のつきまわりも十分に得らｎ、平面部、コーナ一部
ともに高い耐電圧が得られる。なお、釉薬、フィラーと
もに粒径２０μｍ以上のものを１重量％以下にすｎば、
ほうろう層中リポイドがより小さな力に分布し、耐電圧
的により望ましい。Figure m1 shows a complete cross-sectional view of the enamel substrate produced according to the present invention. Although there are voids of 5 to 50 μm and 8 degrees in diameter throughout the enamel layer, there are no voids larger than 50 μm in diameter, and sufficient throwing power is obtained at some corners, and a high withstand voltage is obtained on both the flat and corner portions. It will be done. In addition, if both the glaze and filler have a particle size of 20 μm or more at 1% by weight or less,
Lipoids in the enamel layer are distributed with smaller force, which is more desirable in terms of withstand voltage.
一般的な施釉法では、施釉後焼成前の空隙率は５０％以
上である。そのために、従来、金属芯からのガス（Ｃｏ
２など）発生などを抑制しても、空隙に起因するボイド
を完全に抑制できず、耐電圧的に信頼性の高い基板を得
ることがむずかしかった。そこで、ほうろう層の耐電圧
を者しく低下させる５０μｍ以上のボイドが生成しない
で、小さなボイドで分散している力が耐電圧的に良好な
こと及び、施釉時の塗布粒径と焼成後に発生するボイド
の径とは正の強い相関のあることを見い出し、塗布粒子
の粒径を従来より微粉化させれば、基板のほうろう層の
耐電圧が上昇することを見い出した。またｆｔ板のスル
ーホール部やエツジ部コーナーのほうろう層が薄（なる
原因は施勾後の焼成時の溶融により、ほうろう１の粘度
が低くなり、表面張力により流動するためである。そこ
で溶融時の見かけ粘度を上げれば、焼成時にほうろう層
が流動しにくくなり、コーナーのほうろう層つきまわり
が確保できる。その方法として、無機物フィラーの混合
量を、ほうろう釉薬微粉１００部に対して４０〜８０部
とすることが有効である。In a typical glazing method, the porosity after glazing and before firing is 50% or more. For this purpose, conventionally, gas (Co
Even if the occurrence of voids caused by voids such as 2) is suppressed, it is not possible to completely suppress the voids caused by voids, and it is difficult to obtain a highly reliable substrate in terms of withstand voltage. Therefore, voids of 50 μm or more, which would significantly reduce the withstand voltage of the enamel layer, are not generated, and the force dispersed in small voids is good in terms of withstand voltage. They found that there is a strong positive correlation with the diameter of the voids, and found that if the particle size of the coated particles is made finer than before, the withstand voltage of the enamel layer of the substrate increases. In addition, the enamel layer at the through-holes and edge corners of the FT board is thin (the reason for this is that the viscosity of the enamel 1 decreases due to melting during firing after gradation, and it flows due to surface tension. By increasing the apparent viscosity of the enamel, the enamel layer becomes difficult to flow during firing, and the coverage of the enamel layer at the corners can be ensured.As a method, the amount of inorganic filler to be mixed is 40 to 80 parts per 100 parts of fine enamel glaze powder. It is effective to do so.
実施例
酸化物表示で５ｉ（ｈ ５ ＆ ７％、 ８２０ｓ １
５．９％。Example oxide display: 5i (h 5 & 7%, 820s 1
5.9%.
Ｎａ２Ｏ＋Ｋｚ０ １ ５．８％ｅ Ａｌｔｏｓ ４
．７％、 ＣａＦ＊４．７％、 ＣｏＯ＋ＮｉＯα９
％＊ Ｍｕ（ｈ １．３％からなろ勾薬をふるい上げ
重量５０％の粒径が５ｕｍになるようにボールミルで粉
砕した。このものの２０μｍ以上の粒径のものは１！量
％以下であった。このもの１００部に、ふるい上げ重量
５０％の粒径が約６μｍ（２０μｍ以上の粒径のものを
工１重−ｊｉ％以下）のケイ酸ジルコニウム全６０部の
割合で混合した。このものを用いて５０ＩＩＬ１１角、
厚さ１鴎、スルーホール直径２鰭１０大のあいた鉄芯（
ＳＰＰ鋼板）ＩＣ，全知のほうろう用前処理後電気泳動
法により施釉し、８９０℃で６分間焼成した。このもの
２０枚でほうろう層表面と鉄芯間の耐電圧を測定したと
ころ、ほうろう層の膜厚は１５０へ２００μｍで耐電圧
は２．５〜５．Ｑ ｋＶでありた。Na2O+Kz0 1 5.8%e Altos 4
．． 7%, CaF*4.7%, CoO+NiOα9
%* Mu (h) Naro powder was sieved from 1.3% and ground in a ball mill so that the particle size at 50% of the weight was 5 um. 100 parts of this material were mixed with a total of 60 parts of zirconium silicate having a particle size of about 6 μm at 50% of the sieved weight (less than 1% by weight of particles with a particle size of 20 μm or more). 50 IIL 11 squares using a
Thickness: 1 fin, through hole diameter: 2 fins, iron core with 10 sized holes (
SPP steel plate) IC, after pre-treatment for enamel, was glazed by electrophoresis method and fired at 890°C for 6 minutes. When we measured the withstand voltage between the surface of the enamel layer and the iron core using 20 sheets of this material, the thickness of the enamel layer was 150 to 200 μm, and the withstand voltage was 2.5 to 5. It was Q kV.
比較例
実施例の釉薬金ふるい上げ重量５０％の粒径が５０μｍ
になるようにボールミルで粉砕し、実施例で用いたケイ
酸ジルコニウムを釉薬１０Ｏ部に対して２０部の割合で
ａ合した。このものを用いて実施例と同様にして施釉し
、８６０℃で６分間焼成した。こりもの２０枚の耐電圧
を測定したところ耐電圧は、Ｉ１２〜１．０ ｋＶであ
りた。耐電圧破壊したものをニスルーホールもしくはエ
ツジ部のコーナーが１８枚であり、平面部が２枚であっ
た。Comparative Example The particle size of the gold sieved weight of 50% of the example is 50 μm.
The zirconium silicate used in the examples was mixed in a ratio of 20 parts to 100 parts of the glaze. This product was glazed in the same manner as in the example and fired at 860°C for 6 minutes. When the withstand voltage of 20 pieces of dirt was measured, the withstand voltage was I12 to 1.0 kV. There were 18 pieces that suffered breakdown due to the withstand voltage at the corner of the varnish through hole or edge part, and 2 pieces that had the flat part.
（発明の効果）
本発明では非晶質釉薬を用いたほうろう基板におい℃、
ほうろう層に存在するボイドを微Ｉ」・径のまま分散化
させるための施釉粉体の粒度を定め、又、コーナ一部の
つｆ！まわりを５０％以上得らｎる無機フィラーの混合
量を定めたことにより、ほうろう層の耐電圧に優れたほ
うろう基板を得ることができた。(Effects of the invention) In the present invention, an enamel substrate using an amorphous glaze has a
The particle size of the glazing powder was determined in order to disperse the voids existing in the enamel layer while maintaining a fine diameter. By determining the mixing amount of the inorganic filler that would give a 50% or more of the porosity, it was possible to obtain an enamel substrate with an excellent dielectric strength of the enamel layer.
第１図は本発明によるほうろう基板の断面図であり、第
２図は、従来のほうろう基板の断面図である。
符号の説明
１ 金属芯 ２ ほうろう層
３ ボイド ４ コーナ一部
３−・−コーナ一部FIG. 1 is a sectional view of an enamel substrate according to the present invention, and FIG. 2 is a sectional view of a conventional enamel substrate. Explanation of symbols 1 Metal core 2 Enamel layer 3 Void 4 Part of corner 3 - Part of corner
Claims (1)
の混合物を付着せしめた後、焼成によりほうろう層を形
成するほうろう基板の製造法において、ほうろう釉薬微
粉の粒径２０μｍ以上のものが１０重量％以下であり、
無機物フィラーの溶融温度が焼成温度以上でかつ粒径２
０μｍ以上のものが５０重量、以下であり、更にほうろ
う釉薬微粉１００重量部に対して無機物フィラー４０〜
８０重量部混合することを特徴とするほうろう基板の製
造法。1. In a method for manufacturing an enamel substrate in which a mixture of fine enamel glaze powder and inorganic filler is deposited on a metal core and then an enamel layer is formed by firing, 10% by weight of fine enamel glaze powder with a particle size of 20 μm or more is used. The following is
The melting temperature of the inorganic filler is higher than the firing temperature and the particle size is 2.
50 parts by weight or less of particles with a diameter of 0 μm or more, and 40 to 40 parts by weight of inorganic filler per 100 parts by weight of fine enamel glaze powder.
A method for producing an enameled substrate, characterized by mixing 80 parts by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17941186A JPS6335437A (en) | 1986-07-30 | 1986-07-30 | Production of enamel base |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17941186A JPS6335437A (en) | 1986-07-30 | 1986-07-30 | Production of enamel base |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6335437A true JPS6335437A (en) | 1988-02-16 |
Family
ID=16065394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17941186A Pending JPS6335437A (en) | 1986-07-30 | 1986-07-30 | Production of enamel base |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6335437A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0474732A (en) * | 1990-07-09 | 1992-03-10 | Ngk Insulators Ltd | Enamel glaze and enamel product having stone-grain produced by using the same |
| JP2024104909A (en) * | 2023-01-25 | 2024-08-06 | 阪和ホーロー株式会社 | Enamel products and enamel glazes |
-
1986
- 1986-07-30 JP JP17941186A patent/JPS6335437A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0474732A (en) * | 1990-07-09 | 1992-03-10 | Ngk Insulators Ltd | Enamel glaze and enamel product having stone-grain produced by using the same |
| JP2024104909A (en) * | 2023-01-25 | 2024-08-06 | 阪和ホーロー株式会社 | Enamel products and enamel glazes |
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