JPS6335452A - Manufacture of structural member for semiconductor diffusion furnace - Google Patents
Manufacture of structural member for semiconductor diffusion furnaceInfo
- Publication number
- JPS6335452A JPS6335452A JP61178800A JP17880086A JPS6335452A JP S6335452 A JPS6335452 A JP S6335452A JP 61178800 A JP61178800 A JP 61178800A JP 17880086 A JP17880086 A JP 17880086A JP S6335452 A JPS6335452 A JP S6335452A
- Authority
- JP
- Japan
- Prior art keywords
- component
- diffusion furnace
- coating layer
- semiconductor diffusion
- sic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009792 diffusion process Methods 0.000 title claims description 11
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000000843 powder Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 22
- 239000011247 coating layer Substances 0.000 claims description 18
- 239000002245 particle Substances 0.000 claims description 17
- 239000012535 impurity Substances 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 238000000746 purification Methods 0.000 claims description 6
- 238000010926 purge Methods 0.000 claims description 4
- 239000011230 binding agent Substances 0.000 claims description 3
- 239000008187 granular material Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 238000005245 sintering Methods 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 24
- 229910010271 silicon carbide Inorganic materials 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 239000011362 coarse particle Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000007569 slipcasting Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010440 gypsum Substances 0.000 description 1
- 229910052602 gypsum Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910000039 hydrogen halide Inorganic materials 0.000 description 1
- 239000012433 hydrogen halide Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011271 tar pitch Substances 0.000 description 1
- DWAWYEUJUWLESO-UHFFFAOYSA-N trichloromethylsilane Chemical compound [SiH3]C(Cl)(Cl)Cl DWAWYEUJUWLESO-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Ceramic Products (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産−の
この発明はプロセスチューブやボートのごとき半導体拡
散炉用構成部材の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION This invention relates to a method of manufacturing components for semiconductor diffusion furnaces such as process tubes and boats.
ｉＬ悲１１
特公昭５４−１０８２５＠公報は半導体拡敗炉の構成部
材を示している。この従来例にあっては、０．１〜８μ
ｍの平均粒径を有する微粒と、３０〜１７０μｍの平均
粒径を有する粗粒からなるＳｉＣ粉末の焼結体によって
再結晶質の焼結ＳｉＣマトリックスが形成されている。iL-11 Japanese Patent Publication No. 54-10825@publication shows the constituent members of a semiconductor expansion reactor. In this conventional example, 0.1 to 8μ
A recrystallized sintered SiC matrix is formed by a sintered body of SiC powder consisting of fine particles having an average particle size of m and coarse particles having an average particle size of 30 to 170 μm.
しかも、主としてスリップキャスティング法によって構
成部材を形成している。Moreover, the structural members are mainly formed by slip casting.
他方、プロセスチューブにＳｉＣのＣＶＤコーティング
層を設けることは、特開昭５２−１４５４１９号公報、
特開昭５４−９０９６６号公報、特開昭５４−９０９６
７号公報に開示されている。On the other hand, providing a SiC CVD coating layer on a process tube is disclosed in Japanese Patent Application Laid-Open No. 52-145419,
JP-A-54-90966, JP-A-54-9096
It is disclosed in Publication No. 7.
、 が ゛ しよ−とする
前述の特公昭５４−１０８２５号公報に示されている半
導体拡散炉の構成部材にあっては、特に微粒のＳｉＣ粉
末が０．１〜８μｍの平均粒径を有するため、粉末の表
面積が非常に大きくなり、不純物をキャッチしやすい。In the component of the semiconductor diffusion furnace shown in the above-mentioned Japanese Patent Publication No. 54-10825, in which fine SiC powder has an average particle size of 0.1 to 8 μm, Therefore, the surface area of the powder becomes extremely large, making it easier to catch impurities.
−数的にいって、Ｓｉ０粒は、振動ミル等の粉砕機によ
り粉砕された後、篩分（分級）されて原料として用いら
れている。この粉砕工程における不純物の汚染は極めて
大きく、そのままの状態では拡散炉用部材としては使用
出来ないため、酸処理等の純化処理を行う。- Numerically speaking, Si0 grains are pulverized by a pulverizer such as a vibrating mill, then sieved (classified) and used as a raw material. The contamination with impurities in this pulverization step is extremely large, and the material cannot be used as a member for a diffusion furnace in that state, so a purification treatment such as acid treatment is performed.
この場合、微粉になればなる程、汚染の程度は大きく、
また純化処理も困難となる。In this case, the finer the powder, the greater the degree of contamination.
Furthermore, purification treatment becomes difficult.
従って、粗粒を用いた方が、材料としては好ましい。し
かし、粗粉のみでは、仮焼結体の密度は不十分である。Therefore, it is preferable to use coarse particles as a material. However, the density of the temporary sintered body is insufficient if only the coarse powder is used.
また、粗粒が大きすぎると、製品の強度も十分とはなら
ず、問題となった。Furthermore, if the coarse particles were too large, the strength of the product would not be sufficient, which was a problem.
他方、ＳｉＣのＣＶＤコーティング層を半導体拡散炉用
構成部材の表面に形成するときは、そのＳｉＣのＣＶＤ
コーティング層と構成部材の材質が相違することから面
の平滑度によって機械的強度が問題になりやすいことが
わかった。つまり構成部材の表面が平滑でないと、ウェ
ーハの熱処理時にＳｉＣのＣＶＤコーティング層にクラ
ックが発生しやすくなるからである。しかも、ＳｉＣの
ＣＶＤコーティング層を形成する際に、構成部材の小さ
な突起部分が拡大される現象が生じるので、構成部材自
体にごくわずかでも凹凸部分が存在すると、それに対応
してＣＶＤコーティング層に比較的大きな凹凸部分が生
じる。それゆえ、ＳｉＣのＣＶＤコーティング層をつく
ろうとする構成部材の表面（たとえば特にプロセスチュ
ーブの内面）は非常に平滑にしなければならない。On the other hand, when forming a CVD coating layer of SiC on the surface of a component for a semiconductor diffusion furnace, the CVD coating layer of SiC
Since the materials of the coating layer and the constituent members are different, it was found that mechanical strength tends to be a problem depending on the smoothness of the surface. In other words, if the surface of the component is not smooth, cracks are likely to occur in the SiC CVD coating layer during heat treatment of the wafer. Furthermore, when forming the SiC CVD coating layer, a phenomenon occurs in which small protrusions on the component are enlarged, so if there is even a slight unevenness on the component itself, the CVD coating layer will be Large uneven areas occur. Therefore, the surfaces of the components on which the SiC CVD coating layer is to be applied (eg, especially the inner surface of the process tube) must be very smooth.
従来のようにスリップキャスティング法によって構成部
材を形成すると、構成部材の一方の表面（たとえば内面
）はスリップキせスティング鋳込み型（石こう型）に規
定される表面とは違って必ずしも平滑ではない。平滑で
はない内面にＣＶＤコートすると、ＣＶＤに特徴的なペ
ブルが異常成長し、平滑性がそこなわれ、異常成長した
ペブルの脱落等によりＣＶＤＩＩＩにピンホールが発生
したり、又内面への被処理物の出入によりＣＶＤ膜が損
傷を受ける等の不具合があった。When a component is formed by a conventional slip casting method, one surface (for example, the inner surface) of the component is not necessarily smooth, unlike the surface defined by a slip casting mold (gypsum mold). If CVD coating is applied to an inner surface that is not smooth, pebbles characteristic of CVD will grow abnormally, the smoothness will be impaired, pinholes will occur in CVDIII due to the abnormally grown pebbles falling off, and the inner surface will be coated. There were problems such as damage to the CVD film due to objects coming in and out.
１１へ１１
この発明は前述のような従来技術の欠点を解消して、物
理特性とくに膜の機械的強度を向上できる半導体拡散炉
用構成部材の製造方法を提供することを目的としている
。11 to 11 It is an object of the present invention to provide a method for manufacturing a component for a semiconductor diffusion furnace which can improve the physical properties, particularly the mechanical strength of the film, by eliminating the drawbacks of the prior art as described above.
１１ΔＬＬ
この目的を達成するために、この発明は平均粒径１０μ
ｍ〜平均粒径３０μｍの中粒のＳｉＣ粉末１重層部と、
平均粒径８０μｍ〜平均粒径２００μｍの粗粒のＳｉＣ
粉末１〜２．５重量部とを混合し、有機結合剤を加えて
から混練造粒し、ラバープレスにより成形し、それを８
００〜１２００℃で仮焼成して仮焼成体をつくり、その
仮焼成体に１５００〜１８００℃でシリコンを含浸させ
ながら反応焼結させ、そのあと構成部材の所定表面に１
０μｍ以上の厚みを有するＳｉＣのＣＶＤコーティング
層を形成することを特徴とする半導体拡散炉用構成部材
の製造方法を要旨としている。11ΔLL To achieve this objective, the present invention has an average particle size of 10μ
m ~ one layered portion of medium-grained SiC powder with an average particle diameter of 30 μm,
Coarse grain SiC with an average particle size of 80 μm to 200 μm
Mix 1 to 2.5 parts by weight of powder, add an organic binder, knead and granulate, mold with a rubber press, and
A calcined body is produced by pre-firing at 00 to 1200°C, and the calcined body is reacted and sintered while being impregnated with silicon at 1500 to 1800 °C.
The gist of this invention is a method for manufacturing a component for a semiconductor diffusion furnace, which is characterized by forming a CVD coating layer of SiC having a thickness of 0 μm or more.
４１、を解決するための
この発明にあっては、微粒のシリコンカーバイド粉末を
全く使用せず、中粒のＳｉＣと粗粉のＳｉＣ粉末を使用
する。とくに中粒のＳｉＣ粉末の粒径を比較的大きなも
のとしている。すなわち、中粒粉末の平均粒径を１０〜
３０μ■としている。また、粗粒粉末の平均粒径は８０
〜２００μｍである。これらの中粒粉末１重量部と粗粒
粉末１〜２．５重量部を混合し、フェノールレジン、ポ
リビニルアルコール、タールピッチなどの有機結合剤′
を加えて混練造粒し、ラバープレスにより成形し、８０
０〜１２００℃で仮焼成し、さらに１０００〜１８００
℃でハロゲン、ハロゲン化水素、塩酸ガスのごときＨＣ
ｌガスにより不純物のパージをして純化処理をし、その
あとで１５００〜１８００℃でシリコンを含浸して反応
焼結させ、さらにＳｉＣのＣＶＤコーティング層をつく
る。In this invention to solve the problem No. 41, no fine silicon carbide powder is used at all, but medium-grained SiC and coarse-grained SiC powder are used. In particular, the particle size of the medium-sized SiC powder is made relatively large. That is, the average particle size of the medium-sized powder is 10~
It is set to 30 μ■. In addition, the average particle size of the coarse powder is 80
~200 μm. 1 part by weight of these medium-grained powders and 1 to 2.5 parts by weight of coarse-grained powders are mixed and an organic binder such as phenol resin, polyvinyl alcohol, tar pitch, etc.
was added, kneaded and granulated, molded using a rubber press, and
Temporarily fired at 0 to 1200°C, and further fired at 1000 to 1800°C.
HC such as halogen, hydrogen halide, and hydrochloric acid gas at ℃
Purification treatment is performed by purging impurities with L gas, and then impregnating with silicon at 1500 to 1800°C and reaction sintering, followed by creating a CVD coating layer of SiC.
焼成温度を１５００〜１８００℃にすることにより、非
再結晶質（つまり反応焼結）のＳｉＣマトリックスにす
る。非再結晶質のものは従来の再結晶質のものに比較し
てＣＶＤコーティング層との組合せで機械的強度が大で
ある。By setting the firing temperature to 1500 to 1800°C, a non-recrystallized (that is, reactive sintered) SiC matrix is obtained. Non-recrystallized materials have greater mechanical strength in combination with CVD coating layers than conventional recrystallized materials.
中粒粉末の粒径が１０μｍよりも小さいと、ラバープレ
ス法に適さず、品質が安定せず、機械的強度も低くなる
。しかも、不純物の汚染が大きく純化処理が困難となる
。一方、中粒粉末の粒径が３０μｍよりも大きい場合は
所望の殿械的強度が得られない。If the particle size of the medium-sized powder is smaller than 10 μm, it will not be suitable for the rubber press method, the quality will not be stable, and the mechanical strength will be low. Moreover, the contamination with impurities is large, making purification treatment difficult. On the other hand, if the particle size of the medium-sized powder is larger than 30 μm, the desired mechanical strength cannot be obtained.
実施例 プロセスチューブの製造例を説明する。Example An example of manufacturing a process tube will be explained.
まず、平均粒径が２０μｍのグリーン３ｉＣと、平均粒
径が１５０μｍのグリーン３ｉＣとの２種類の粉末を準
備する。First, two types of powder are prepared: Green 3iC with an average particle size of 20 μm and Green 3iC with an average particle size of 150 μm.
このような中粒のＳｉＣ粉末１重量部と粗粒のＳｉＣの
粉末１重量部とを混合し、それにフェノールレジンを加
える。しかる後、これらの混合物を混練し、造粒して造
粒物をつくる。さらに、かかる造粒物を乾燥させてから
ラバープレスにより所望形状のプロセスチューブに成形
して成形品をつくる。必要に応じて、その成形品を加工
する。しかる後、仮焼成炉で８００〜１２００℃の温度
で仮焼成して仮焼成体をつくり、それを別のパージ炉に
移して１０００〜１８００℃（好ましくは１５００〜１
８００℃）でパージして純化させ、さらに別の焼成炉で
１５００〜１８００℃でシリコン（Ｓｉ）を含浸させる
と同時に反応焼結させる。そのあとプロセスチューブの
内面にＣＶＤコーティング法で好ましくは減圧下でＳｉ
ＣのＣＶＤコーティング層をつくる。1 part by weight of such medium-grained SiC powder and 1 part by weight of coarse-grained SiC powder are mixed, and phenol resin is added thereto. Thereafter, these mixtures are kneaded and granulated to produce granules. Further, the granulated product is dried and then molded into a process tube of a desired shape using a rubber press to produce a molded product. Process the molded product as necessary. Thereafter, a calcined body is produced by calcining in a calcining furnace at a temperature of 800 to 1,200°C, and then transferred to another purge furnace at a temperature of 1,000 to 1,800℃ (preferably 1,500 to 1,500℃).
It is purified by purging at a temperature of 800° C.), and impregnated with silicon (Si) at 1500 to 1800° C. and simultaneously reacted and sintered in another firing furnace. Thereafter, the inner surface of the process tube is coated with Si using a CVD coating method, preferably under reduced pressure.
Create a CVD coating layer of C.
たとえば、特開昭５４ ９０９６７Ｍ公報に開示されて
いるＣＶＤコーティング法により、気密状態の外殻内に
筒状黒鉛電極を設け、その中に前述のプロセスチューブ
を垂直に配置し、そのプロセスチューブの下端開口から
カーボンを含むシランガス（例えばトリクロルメチルシ
ランガス）を毎分４ｍＱ流入させ、かつキャリアガスと
して水素ガスを毎分４０００１９流入させる。それと同
時にプロセスチューブ内を７０ Ｔ ｏｒｒまで減圧す
る。つづいて誘導加熱器によって加熱し、プロセスチュ
ーブ内面に反応物を析出させて３０μｍ厚みのＳｉＣの
ＣＶＤコーティング層を形成する。For example, by using the CVD coating method disclosed in Japanese Patent Application Laid-Open No. 54-90967M, a cylindrical graphite electrode is provided inside an airtight outer shell, the above-mentioned process tube is vertically arranged therein, and the lower end of the process tube is Silane gas containing carbon (for example, trichloromethylsilane gas) is allowed to flow through the opening at 4 mQ/min, and hydrogen gas is allowed to flow in at 400,019 mQ/min as a carrier gas. At the same time, the pressure inside the process tube is reduced to 70 Torr. Subsequently, the process tube is heated with an induction heater to deposit a reactant on the inner surface of the process tube, thereby forming a CVD coating layer of SiC with a thickness of 30 μm.
最後に必要に応じて研磨等の最終仕上げを行う。Finally, perform final finishing such as polishing if necessary.
なお、ライナー管やボートやパドルも前述のプロセスチ
ューブと同様の方法で作ることができる。Note that liner tubes, boats, and paddles can also be made in the same manner as the process tube described above.
ユ１し１匁」Ｌ
使用するＳｉＣ粉末の粒径が従来のものに比較して大き
く、したがって、内部表面積も小さいために不純物がキ
ャッチされ難い。′さらに、純化処理が容甥で且つ短時
間で行える。The particle size of the SiC powder used is larger than conventional ones, and the internal surface area is also small, making it difficult for impurities to be caught. 'Furthermore, the purification process can be performed easily and in a short time.
また、仮焼成体の気孔がシリコンを含浸するのに適当な
大きさであり、シリコンの含浸が充分になされるので高
強度である。In addition, the pores of the calcined body are of a suitable size to be impregnated with silicon, and the impregnation of silicon is sufficient, so that the calcined body has high strength.
また、粗粒のＳｉＣ粉末の方は勿論のこと中粒のＳｉＣ
の粉末の方についても造粒がしやすく、効率的に出来る
ため、ラバープレスの製造上の効果を増大できる。また
、ラバープレスにより成形品の品質が安定するという現
実的に極めて重大な効果が得られる。In addition, not only coarse-grained SiC powder but also medium-grained SiC
Since the powder can also be granulated easily and efficiently, the manufacturing effect of the rubber press can be increased. Furthermore, the rubber press provides a very important effect in terms of stabilizing the quality of the molded product.
しかも、この発明にあっては比較的粒径の大きい粉末を
使用することから、構成部材の純度が従来より高純度で
ある為、ＣＶＤコート時に低沸点物質のガス化が少なく
、密着性の良い膜ができる。更に本発明の方法による構
成部材は従来よりも平滑度が高い為、強固な膜ができる
。Moreover, since this invention uses powder with a relatively large particle size, the purity of the constituent parts is higher than before, so there is less gasification of low boiling point substances during CVD coating, and good adhesion is achieved. A film is formed. Furthermore, since the component produced by the method of the present invention has a higher degree of smoothness than the conventional method, a strong film can be produced.
また、ウェーハの熱処理のとき１０００〜１３００℃ま
でウェーハを加熱するのが一般的である。通例は構成部
材からシリコンのしみ出しくシリコン部分が構成部材の
表面からはみ出してくること）が生じ、その結果、構成
部材の表面が平滑でなくなり、ウェーハの品質劣化を招
くことがあったが、本発明ではＣＶＤコーティング層が
あるので全くそのような現象が生じない。Further, during heat treatment of the wafer, it is common to heat the wafer to 1000 to 1300°C. Usually, silicon seeps out from the component and the silicon part protrudes from the surface of the component.As a result, the surface of the component becomes uneven and the quality of the wafer deteriorates. In the present invention, since there is a CVD coating layer, such a phenomenon does not occur at all.
また、炉が大型化すれば、それだけ構成部材の体積が増
えるため、それに比例して不純物の絶対恐が多くなり、
その結果、処理時に不純物が内面から飛び出しやすくな
る。しかし、本発明ではＣＶＤコーティング層が存在す
るため、構成部材中の不純物の影響をうけない。したが
って、本発明は炉が大型（たとえば６インチウェーハや
８インチウェーハ用のもの）のとき効果が顕著となる。In addition, as the furnace becomes larger, the volume of the constituent parts increases accordingly, and the absolute risk of impurities increases proportionally.
As a result, impurities tend to fly out from the inner surface during processing. However, in the present invention, due to the presence of the CVD coating layer, it is not affected by impurities in the component parts. Therefore, the effect of the present invention becomes significant when the furnace is large-sized (for example, one for 6-inch wafers or 8-inch wafers).
Claims (4)
ｉＣ粉末１重量部と、平均粒径８０μｍ〜平均粒径２０
０μｍの粗粒のＳｉＣ粉末１〜２．５重量部とを混合し
、有機結合剤を加えてから混練造粒し、ラバープレスに
より成形し、それを８００〜１２００℃で仮焼成して仮
焼成体をつくり、その仮焼成体に１５００〜１８００℃
でシリコンを含浸させながら反応焼結させ、そのあと構
成部材の所定表面に１０μｍ以上の厚みを有するＳｉＣ
のＣＶＤコーティング層を形成することを特徴とする半
導体拡散炉用構成部材の製造方法。(1) Medium grain S with an average particle size of 10 μm to 30 μm
1 part by weight of iC powder and an average particle size of 80 μm to 20 μm
Mix 1 to 2.5 parts by weight of 0 μm coarse SiC powder, add an organic binder, knead and granulate, shape with a rubber press, and pre-sinter at 800-1200°C. The body is made, and the pre-fired body is heated to 1500-1800℃.
Reaction sintering is performed while impregnating silicon with silicon, and then SiC having a thickness of 10 μm or more is applied to a predetermined surface of the component.
A method for manufacturing a component for a semiconductor diffusion furnace, comprising forming a CVD coating layer.
℃でＨＣｌガスによる不純物のパージを行って純化する
特許請求の範囲第１項に記載された半導体拡散炉用構成
部材の製造方法。(2) 1000 to 1800 before impregnating the calcined body with silicone
A method for manufacturing a component for a semiconductor diffusion furnace according to claim 1, wherein purification is performed by purging impurities with HCl gas at a temperature of .degree.
である特許請求の範囲第１項又は第２項に記載された半
導体拡散炉用構成部材の製造方法。(3) Thickness of CVD coating layer is 20 to 500 μm
A method for manufacturing a component for a semiconductor diffusion furnace according to claim 1 or 2.
請求の範囲第１項又は第２項又は第３項に記載された半
導体拡散炉用構成部材の製造方法。(4) A method for manufacturing a component for a semiconductor diffusion furnace according to claim 1, 2, or 3, in which the CVD coating layer is formed under reduced pressure.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61178800A JPS6335452A (en) | 1986-07-31 | 1986-07-31 | Manufacture of structural member for semiconductor diffusion furnace |
| IT19769/87A IT1203839B (en) | 1986-07-31 | 1987-03-19 | PROCEDURE FOR MAKING AN OVEN COMPONENT |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61178800A JPS6335452A (en) | 1986-07-31 | 1986-07-31 | Manufacture of structural member for semiconductor diffusion furnace |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6335452A true JPS6335452A (en) | 1988-02-16 |
| JPH0310592B2 JPH0310592B2 (en) | 1991-02-14 |
Family
ID=16054866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61178800A Granted JPS6335452A (en) | 1986-07-31 | 1986-07-31 | Manufacture of structural member for semiconductor diffusion furnace |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS6335452A (en) |
| IT (1) | IT1203839B (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01282153A (en) * | 1988-05-06 | 1989-11-14 | Shin Etsu Chem Co Ltd | Silicon carbide-based reaction tube |
| JPH01282152A (en) * | 1988-05-06 | 1989-11-14 | Shin Etsu Chem Co Ltd | Silicon carbide-based reaction tube |
| JPH0382117A (en) * | 1989-08-25 | 1991-04-08 | Toshiba Ceramics Co Ltd | Manufacture of jig for semiconductor wafer treatment |
| JPH1045476A (en) * | 1996-08-01 | 1998-02-17 | Toshiba Ceramics Co Ltd | Processing tool for semiconductor wafer |
| US6506254B1 (en) | 2000-06-30 | 2003-01-14 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
| US6673198B1 (en) | 1999-12-22 | 2004-01-06 | Lam Research Corporation | Semiconductor processing equipment having improved process drift control |
| US6699401B1 (en) | 2000-02-15 | 2004-03-02 | Toshiba Ceramics Co., Ltd. | Method for manufacturing Si-SiC member for semiconductor heat treatment |
| US6890861B1 (en) | 2000-06-30 | 2005-05-10 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
| JP2024140909A (en) * | 2023-03-28 | 2024-10-10 | 日本碍子株式会社 | Ceramic body and method of manufacturing same |
-
1986
- 1986-07-31 JP JP61178800A patent/JPS6335452A/en active Granted
-
1987
- 1987-03-19 IT IT19769/87A patent/IT1203839B/en active
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01282153A (en) * | 1988-05-06 | 1989-11-14 | Shin Etsu Chem Co Ltd | Silicon carbide-based reaction tube |
| JPH01282152A (en) * | 1988-05-06 | 1989-11-14 | Shin Etsu Chem Co Ltd | Silicon carbide-based reaction tube |
| JPH0382117A (en) * | 1989-08-25 | 1991-04-08 | Toshiba Ceramics Co Ltd | Manufacture of jig for semiconductor wafer treatment |
| JPH1045476A (en) * | 1996-08-01 | 1998-02-17 | Toshiba Ceramics Co Ltd | Processing tool for semiconductor wafer |
| US6673198B1 (en) | 1999-12-22 | 2004-01-06 | Lam Research Corporation | Semiconductor processing equipment having improved process drift control |
| US6881608B2 (en) | 1999-12-22 | 2005-04-19 | Lam Research Corporation | Semiconductor processing equipment having improved process drift control |
| US6699401B1 (en) | 2000-02-15 | 2004-03-02 | Toshiba Ceramics Co., Ltd. | Method for manufacturing Si-SiC member for semiconductor heat treatment |
| US6506254B1 (en) | 2000-06-30 | 2003-01-14 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
| US6890861B1 (en) | 2000-06-30 | 2005-05-10 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
| US7802539B2 (en) | 2000-06-30 | 2010-09-28 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
| JP2024140909A (en) * | 2023-03-28 | 2024-10-10 | 日本碍子株式会社 | Ceramic body and method of manufacturing same |
Also Published As
| Publication number | Publication date |
|---|---|
| IT1203839B (en) | 1989-02-23 |
| JPH0310592B2 (en) | 1991-02-14 |
| IT8719769A0 (en) | 1987-03-19 |
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