JPS6337064B2 - - Google Patents
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- Publication number
- JPS6337064B2 JPS6337064B2 JP58241378A JP24137883A JPS6337064B2 JP S6337064 B2 JPS6337064 B2 JP S6337064B2 JP 58241378 A JP58241378 A JP 58241378A JP 24137883 A JP24137883 A JP 24137883A JP S6337064 B2 JPS6337064 B2 JP S6337064B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- nitride ceramics
- producing silicon
- ceramics according
- resintering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Description
〔発明の技術分野〕
本発明は窒化ケイ素セラミツクスの製造方法に
関する。
〔発明の技術的背景〕
窒化ケイ素を主成分としてなる焼結体(窒化ケ
イ素セラミツクス)は、1900℃程度の高温にまで
耐えるという優れた耐熱性を有すると共に、熱膨
張係数が低く、優れた耐熱衝撃性も備えている。
こうした窒化ケイ素セラミツクスは、デイーゼル
エンジン、ガスタービン等の高温時に高強度が要
求される構造部品や耐食、耐摩耗部品への応用が
試みられている。
ところで、窒化ケイ素セラミツクスの製造方法
としては、従来より窒化ケイ素が単独では焼結し
にくいために、これに希土類元素酸化物やマグネ
シア等の助剤を添加物として加え、常圧焼結、ホ
ツトプレス、HIPなどの緻密化焼結を行なう方法
が採用されている。
〔背景技術の問題点〕
窒化ケイ素セラミツクスを構造材料として用い
る場合は、常温及び高温での強度もさることなが
ら、高度な均質化が要求される。しかしながら、
上述した従来方法では高度に均質化した窒化ケイ
素セラミツクスを製造することは至難であつた。
〔発明の目的〕
本発明は高耐熱性、高強度性はもとより、強度
が均質化された窒化ケイ素セラミツクスの製造方
法を提供しようとするものである。
〔発明の概要〕
本発明者は以下に説明する研究により高度に均
質化された窒化ケイ素セラミツクスを製造し得る
方法を開発した。
α窒化ケイ素(α―Si3N4)―希土類元素酸化
物系を焼結すると、α→βの変換時に結晶粒が長
柱状に成長して強度が向上することが知られてい
る。しかしながら、かかる結晶粒の成長において
アスペクト比を制御することは大変難しく、強度
は特に長手方向の結晶粒径で決定されるので、必
然的にばらつきが生じる。
このようなことから、本発明者らはα―Si3N4
と希土類元素酸化物系の混合物を仮焼してα→β
の変換を行なつて長柱状に結晶粒を成長させた
後、この仮焼物を粉砕してアスペクト比を揃える
ことを行なつた。しかしながら、アスペクト比を
単に揃えた仮焼粉末を焼結してもかならずしも高
度に均質化された窒化ケイ素セラミツクスを得る
ことはできなかつた。
そこで、本発明者らは仮焼物の粉砕物について
粒成長を鋭意検討した結果、仮焼時のα/βの比
率が顕著に影響することを究明し、これに基づい
てα/βの比率を1〜0.1に規定し、これを粉砕
した粉末を用いて再焼結を行なつたところ、強度
のばらつきのない高均質な窒化ケイ素セラミツク
スが得られることを見い出した。
以下、本発明の製造方法を詳細に説明する。
まず、α含有率が80%以上、好ましくは85%以
上の窒化ケイ素粉末を用意する。この窒化ケイ素
粉末は平均粒径が2μm以下、好ましくは0.1〜
1μmのものを選ぶことが望ましい。つづいて、こ
の窒化ケイ素粉末に添加物を加えて原料粉末を調
製する。添加物としては、希土類元素酸化物単
独、或いは希土類元素酸化物とアルミナ、マグネ
シア、窒化アルミニウム、酸化鉄、酸化チタン、
酸化ジルコニウム及び炭化モリブデンから選ばれ
る少なくとも1種との混合物等が用いられる。こ
うした添加物の窒化シリコン粉末への配合量は15
重量%以下、特に前記混合物を用いる場合は希土
類元素酸化物の量を8重量%以下にすることが好
ましい。なお、添加物の粒径は1μm以下のものを
用いればよい。
次いで、前記原料粉末を仮焼してα/β比率を
1〜0.1にまで変換する。仮焼によるα/β比率
を限定した理由はその比率が1を越えると、再焼
結に際し、残存したα―Si3N4のβへの変換によ
つて長柱状粒成長が生じ易くなり、強度のばらつ
きが大きくなる。かといつて、その比率を0.1未
満にすると、得られた窒化ケイ素セラミツクスの
強度低下を招く。なお、仮焼条件は窒素気流中、
1600〜1850℃、好ましくは1700〜1800℃に設定す
ることが望ましい。仮焼時の温度を1600℃未満に
すると、α―Si3N4からβ―Si3N4への変換が遅
く、粒成長も遅くなり、かといつて1850℃を越え
ると、Si3N4が分解し始じめる。
次いで、前記仮焼物を粉砕する。この時の粒径
は1〜50μmにすることが望ましい。この理由は
粉砕粉末の粒径を1μm未満にすると、アスペクト
比が小さくなつて強度向上が難しくなり、かとい
つてその粒径が50μmを越えると、欠陥が大きく
なつて強度低下を招き易くなる。
次いで、仮焼物の粉砕粉末を用いて常圧焼結或
いはホツトプレスを行なつて窒化ケイ素セラミツ
クスを製造する。この再焼結に際しては1700〜
1820℃の温度下にて行なうことが好ましく、1700
℃で未満では焼結が十分に進まず、一方1820℃を
越えると、Si3N4の分解が起こり始じめる。な
お、再焼結としてHIPや雰囲気加圧を採用する場
合は、更に高温側での処理が可能となる。
〔発明の実施例〕
次に、本発明の実施例を説明する。
実施例 1
まず、平均粒径1.0μm、α含有率92%のSi3N4
粉末92重量%と平均粒径0.9μmのY2O3粉末5重
量%と平均粒径0.3μmのAl2O3粉末3重量%とを
混合して原料粉末を調製した。つづいで、この原
料粉末を窒素気流中で1700℃の温度にて30分間仮
焼した。この仮焼物はα/βの比率が0.8のもの
であつた。次いで、仮焼物を平均粒径5.8μmにま
で粉砕した後、この粉砕粉末を1780℃、300Kg/
cm2の条件で90分間ホツトプレスした窒化ケイ素セ
ラミツクスを製造した。
得られた窒化ケイ素セラミツクスは密度が3.24
g/c.c.であつた。
また、窒化ケイ素セラミツクスを3×4×36mm
の寸法に切り出し、この試験片について3点曲げ
強度(σ),(m)を測定したところ、σRT=85
Kg/mm2、ワイブル係数(m)=21で、かつσ1200=
82Kg/mm2、m=27と極めて高強度で、高均質性の
ものであることがわかつた。
実施例 2
実施例1と同様な原料粉末を温度条件を変えて
仮焼しα/βの比率が1,0.6,0.4,0.2,0.1の
仮焼物を作製した後、これら仮焼物を実施例1と
同様な処理を施して5種の窒化ケイ素セラミツク
スを製造した。
得られたセラミツクスの3点曲げ強度を測定
し、その結果を下記表に示した。
[Technical Field of the Invention] The present invention relates to a method for manufacturing silicon nitride ceramics. [Technical Background of the Invention] Sintered bodies containing silicon nitride as a main component (silicon nitride ceramics) have excellent heat resistance, being able to withstand high temperatures of around 1900°C, and have a low coefficient of thermal expansion. It also has impact resistance.
Attempts are being made to apply silicon nitride ceramics to structural parts that require high strength at high temperatures, such as diesel engines and gas turbines, as well as corrosion-resistant and wear-resistant parts. By the way, conventional methods for manufacturing silicon nitride ceramics include adding auxiliary agents such as rare earth element oxides and magnesia as additives, and using atmospheric pressure sintering, hot pressing, etc., since silicon nitride is difficult to sinter by itself. A method of densification sintering such as HIP is used. [Problems with Background Art] When silicon nitride ceramics are used as a structural material, a high degree of homogenization is required as well as strength at room and high temperatures. however,
It has been extremely difficult to produce highly homogenized silicon nitride ceramics using the conventional methods described above. [Object of the Invention] The present invention aims to provide a method for producing silicon nitride ceramics which not only have high heat resistance and high strength but also have uniform strength. [Summary of the Invention] Through the research described below, the present inventors have developed a method for producing highly homogenized silicon nitride ceramics. It is known that when α-silicon nitride (α-Si 3 N 4 )-rare earth element oxide system is sintered, the crystal grains grow into long columnar shapes during the conversion from α to β, resulting in improved strength. However, it is very difficult to control the aspect ratio during the growth of such crystal grains, and since the strength is determined particularly by the crystal grain size in the longitudinal direction, variations inevitably occur. Based on this, the present inventors have determined that α-Si 3 N 4
α→β by calcining a mixture of rare earth element oxide and
After this conversion was performed to grow crystal grains in the form of long columns, this calcined product was crushed to make the aspect ratio uniform. However, it has not always been possible to obtain highly homogenized silicon nitride ceramics by simply sintering calcined powders with the same aspect ratio. Therefore, the present inventors conducted a thorough study on the grain growth of the crushed calcined material, and found that the α/β ratio at the time of calcination has a significant effect, and based on this, the α/β ratio was determined. 1 to 0.1, and by re-sintering the pulverized powder, it was found that highly homogeneous silicon nitride ceramics with no variation in strength could be obtained. Hereinafter, the manufacturing method of the present invention will be explained in detail. First, silicon nitride powder having an α content of 80% or more, preferably 85% or more is prepared. This silicon nitride powder has an average particle size of 2μm or less, preferably 0.1~
It is desirable to choose one with a diameter of 1 μm. Subsequently, additives are added to this silicon nitride powder to prepare raw material powder. Additives include rare earth element oxide alone, or rare earth element oxide and alumina, magnesia, aluminum nitride, iron oxide, titanium oxide,
A mixture with at least one selected from zirconium oxide and molybdenum carbide is used. The amount of these additives added to silicon nitride powder is 15
It is preferable that the amount of rare earth element oxide is 8% by weight or less, especially when using the above mixture. Note that the particle size of the additive may be 1 μm or less. Next, the raw material powder is calcined to convert the α/β ratio to 1 to 0.1. The reason for limiting the α/β ratio during calcination is that if the ratio exceeds 1, long columnar grain growth tends to occur during resintering due to the conversion of remaining α-Si 3 N 4 to β. The variation in strength increases. On the other hand, if the ratio is less than 0.1, the strength of the obtained silicon nitride ceramics will decrease. The calcination conditions were in a nitrogen stream,
It is desirable to set the temperature at 1600 to 1850°C, preferably 1700 to 1800°C. If the temperature during calcination is less than 1600℃, the conversion of α-Si 3 N 4 to β-Si 3 N 4 will be slow, and the grain growth will also be slow; however, if the temperature exceeds 1850℃, Si 3 N 4 begins to decompose. Next, the calcined product is pulverized. The particle size at this time is preferably 1 to 50 μm. The reason for this is that if the particle size of the pulverized powder is less than 1 μm, the aspect ratio will become small, making it difficult to improve the strength, whereas if the particle size exceeds 50 μm, defects will become large and the strength will likely deteriorate. Next, pressureless sintering or hot pressing is performed using the pulverized powder of the calcined product to produce silicon nitride ceramics. 1700~ for this resintering
It is preferable to carry out at a temperature of 1820℃, 1700℃.
Below 1820°C, sintering does not proceed sufficiently, while above 1820°C, decomposition of Si 3 N 4 begins to occur. Note that when HIP or atmospheric pressure is used for resintering, processing at even higher temperatures is possible. [Embodiments of the Invention] Next, embodiments of the present invention will be described. Example 1 First, Si 3 N 4 with an average particle size of 1.0 μm and an α content of 92%
A raw material powder was prepared by mixing 92% by weight of powder, 5% by weight of Y 2 O 3 powder with an average particle size of 0.9 μm, and 3% by weight of Al 2 O 3 powder with an average particle size of 0.3 μm. Subsequently, this raw material powder was calcined at a temperature of 1700° C. for 30 minutes in a nitrogen stream. This calcined product had an α/β ratio of 0.8. Next, after pulverizing the calcined material to an average particle size of 5.8μm, this pulverized powder was heated at 1780℃ and 300Kg/
Silicon nitride ceramics were produced by hot pressing at cm 2 for 90 minutes. The resulting silicon nitride ceramic has a density of 3.24
g/cc. In addition, silicon nitride ceramics of 3 x 4 x 36 mm
The test piece was cut out to the dimensions of , and the three-point bending strength (σ), (m) was measured.
Kg/mm 2 , Weibull coefficient (m) = 21, and σ 1200 =
It was found to have extremely high strength of 82Kg/mm 2 and m=27, and high homogeneity. Example 2 The same raw material powder as in Example 1 was calcined under different temperature conditions to produce calcined products with α/β ratios of 1, 0.6, 0.4, 0.2, and 0.1, and then these calcined products were used in Example 1. Five types of silicon nitride ceramics were manufactured by performing the same treatment as described above. The three-point bending strength of the obtained ceramics was measured, and the results are shown in the table below.
以上詳述した如く、本発明によれば高耐熱性、
高強度性はもとより、強度が均質化されたデイー
ゼルエンジン、ガスタービン等の構造材料として
有効な窒化ケイ素セラミツクスの製造方法を提供
できる。
As detailed above, according to the present invention, high heat resistance,
It is possible to provide a method for producing silicon nitride ceramics which not only have high strength but also have uniform strength and are effective as structural materials for diesel engines, gas turbines, etc.
Claims (1)
ケイ素セラミツクスの製造において、α含有率が
80%以上の窒化ケイ素に添加物を混合する工程
と、この混合物を仮焼してα/β比率を1〜0.1
にまで変換する工程と、この仮焼物を粉砕した
後、再焼結する工程とを具備したことを特徴とす
る窒化ケイ素セラミツクスの製造方法。 2 添加物が希土類元素酸化物であることを特徴
とする特許請求の範囲第1項記載の窒化ケイ素セ
ラミツクスの製造方法。 3 添加物が希土類元素酸化物と、アルミナ、マ
グネシア、窒化アルミニウム、酸化鉄、酸化チタ
ン、酸化ジルコニウム、及び炭化モリブデンから
選ばれる少なくとも1種との混合物であることを
特徴とする特許請求の範囲第1項記載の窒化ケイ
素セラミツクスの製造方法。 4 仮焼を1600〜1800℃の温度の窒素気流中で行
なうことを特徴とする特許請求の範囲第1項記載
の窒化ケイ素セラミツクスの製造方法。 5 仮焼物の粉砕により粒径を1〜20μmとする
ことを特徴とする特許請求の範囲第1項記載の窒
化ケイ素セラミツクスの製造方法。 6 再焼結が常圧焼結であることを特徴とする特
許請求の範囲第1項記載の窒化ケイ素セラミツク
スの製造方法。 7 再焼結がホツトプレスであることを特徴とす
る特許請求の範囲第1項記載の窒化ケイ素セラミ
ツクスの製造方法。[Claims] 1. In the production of silicon nitride ceramics made of silicon nitride-additive-based sintered bodies, the α content is
A process of mixing additives with 80% or more silicon nitride, and calcining this mixture to achieve an α/β ratio of 1 to 0.1.
1. A method for producing silicon nitride ceramics, comprising the steps of: converting the calcined product into powder; and pulverizing the calcined material and then resintering it. 2. The method for producing silicon nitride ceramics according to claim 1, wherein the additive is a rare earth element oxide. 3. Claim No. 3, characterized in that the additive is a mixture of a rare earth element oxide and at least one selected from alumina, magnesia, aluminum nitride, iron oxide, titanium oxide, zirconium oxide, and molybdenum carbide. A method for producing silicon nitride ceramics according to item 1. 4. The method for producing silicon nitride ceramics according to claim 1, characterized in that the calcination is carried out in a nitrogen stream at a temperature of 1,600 to 1,800°C. 5. The method for producing silicon nitride ceramics according to claim 1, characterized in that the calcined product is pulverized to a particle size of 1 to 20 μm. 6. The method for producing silicon nitride ceramics according to claim 1, wherein the resintering is pressureless sintering. 7. The method for producing silicon nitride ceramics according to claim 1, wherein the resintering is hot pressing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58241378A JPS60131865A (en) | 1983-12-21 | 1983-12-21 | Manufacture of silicon nitride ceramics |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58241378A JPS60131865A (en) | 1983-12-21 | 1983-12-21 | Manufacture of silicon nitride ceramics |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60131865A JPS60131865A (en) | 1985-07-13 |
| JPS6337064B2 true JPS6337064B2 (en) | 1988-07-22 |
Family
ID=17073389
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58241378A Granted JPS60131865A (en) | 1983-12-21 | 1983-12-21 | Manufacture of silicon nitride ceramics |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60131865A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4892848A (en) * | 1985-07-30 | 1990-01-09 | Kyocera Corporation | Silicon nitride sintered body and process for preparation thereof |
| JPS62297269A (en) * | 1986-06-16 | 1987-12-24 | 住友電気工業株式会社 | Silicon nitride sintered body and its manufacturing method |
| US4880756A (en) * | 1987-09-02 | 1989-11-14 | Ngk Spark Plug Co., Ltd. | Silicon nitride sintered product |
| JPH0694390B2 (en) * | 1988-09-09 | 1994-11-24 | 日本特殊陶業株式会社 | Silicon nitride sintered body |
| US5030599A (en) * | 1990-07-19 | 1991-07-09 | W. R. Grace & Co.-Conn. | Silicon nitride sintered materials |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58151371A (en) * | 1982-02-25 | 1983-09-08 | 住友電気工業株式会社 | Manufacturing method of silicon nitride sintered body |
-
1983
- 1983-12-21 JP JP58241378A patent/JPS60131865A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60131865A (en) | 1985-07-13 |
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