JPS6337639A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To remove a resist easily, and to avoid the limitation of wiring pattern dimensions by forming an air bridge wiring only through wet etching without using dry etching. CONSTITUTION:A resist pattern body 12 is shaped to a section to be air-bridge wired on a base body 11, and a negative type far ultraviolet resist consisting of the naphthoquinone 1,2-diazido-8-sulfonic acid ester of a novolac resin is applied onto the whole surface. The properties of a predetermined surface section an changed through the irradiation of far ultraviolet rays, and an electrode formation prearranged section is bored through development by a solution containing acetic acid ester, thus shaping a resist pattern body 13 with a cross section having overhang structure. A wiring metal 14 is evaporated from the vertical direction of the base body 11, and a release-liquid dimethylformaldehyde (DMF) resist pattern body 13 is removed. Accordingly, the wiring metal 14 on the resist pattern body 13 is gotten rid of while the resist pattern body 12 is taken away by using a release liquid DMF, thus forming an air bridge wiring 15.

Description

DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for forming an air bridge type wiring/gut pattern structure (hereinafter referred to as air bridge wiring).

(Prior art) Regarding conventional air bridge wiring, see the literature, 1985
IEEE-MTT-S International Microuniversal Symposium Digest (Interna
tional Microwave Symposium
m Digest) June 4-6, 1985, No. 63
It is described on pages 67 to 67. A general method for forming airbrush IJ groove wiring will be explained with reference to FIGS. 2(a) to 2(e). First, as shown in FIG.
Then, as shown in FIG. 2(b), a wiring metal 3 is laminated on the entire surface of the base 1 using a vapor deposition method and a plating method. Next, as shown in FIG. 2(C), a resist pattern body 4 is formed by patterning using a lithography method, and as shown in FIG. 2(d), a resist pattern body 4 is formed by patterning.
Using the turn body 4 as a mask, the wiring metal 3 is etched with a low acceleration ion beam to form an air bridge wiring 5. Thereafter, as shown in FIG. 2(e), the resist patterns 2 and 4 are removed by 02 ashing (ashing).

(Problems to be Solved by the Invention) However, in the above-described method for forming air-brittle wiring, the wiring metal cannot be processed by dry etching, and the resist material is denatured, resulting in zero removal of the resist material.
Limited to 2 assings.

Therefore, the substrate under the resist material is required to have 92 ashes resistance, which has the drawback of limiting its use. In addition, as a condition for 02 ashing, sufficient isotropic etching is required, and the ease of ashing the resist under the wiring metal/ε-turn depends on the pattern dimensions, and it is necessary to perform sufficient resist removal. However, there are drawbacks such as the need to reduce the pattern size. It is an object of the present invention to provide a method for forming an air-brittle type wiring pattern body that eliminates the above-mentioned problems of difficulty in removing resist material and limitations on the dimensions of air-brittle type wiring and turn bodies. purpose.

(Means for Solving the Problems) In order to solve the above problems, the present invention provides a method for solving the problems described above.
No. Lunos on the area) /? A turn body is formed on the second region of the base body, and a turn body is formed on a second resist made of a resist material that can be selectively removed with respect to the second turn body, and a wiring metal is formed on the base body from above. Laminated,
The second resist pattern body is removed using a stripping liquid, and the wiring metal on the second resist pattern body is removed (lift-off method), and the second resist pattern body is removed using a stripping liquid. Further, the first region and the second region partially overlap, and the second resist/layer structure has an overhang structure.

(Function) According to the present invention, as described above, the air bridge wiring can be formed only by wet etching without using dry etching, so the resist can be easily removed, and the 111 limit of wiring and pattern dimensions can be reduced. It can be avoided.

(Example) FIGS. 1(a) to 1(d) are process cross-sectional views of air bridge wiring, which are not intended to explain the present invention in detail.

First, as shown in FIG.
Apply R (Bot-shaped resist made by Tokyo Ohka), expose it to light using the normal glue lithography method, and develop it with a developer consisting of a mixture of methyl ethyl ketone and xylene. form 12.

Next, as shown in Figure 1(b), a negative deep ultraviolet resist consisting of naphthoquinone 1,2-noanodo-8-sulfonic acid ester of Nozera resin was applied to the entire surface, and deep ultraviolet rays were irradiated. After altering a predetermined surface portion using a method, development with a solution containing acetate ester is performed to open a portion where an electrode is to be formed. A turn body No. 3 is formed.

Next, as shown in FIG. 1(c), a wiring metal 14 such as Ti/Pt/Au is vapor-deposited onto the base 1 from a direction perpendicular to the base 1.

Thereafter, as shown in FIG. 1(d), the resist pattern body 13 is removed using a stripping solution of methylformamide (hereinafter referred to as DMF).
While removing the upper wiring metal 14 (lift-off method),
By removing the resist/P-turn body 12 using a stripping liquid DMF, an air brittle wire 15 is formed.

As explained above, according to the embodiment of the present invention, since the air brittle wire 15 is formed by the lift-off method, it can be easily turned, and the resist pattern bodies 12 and 13 can be completely removed using a stripping solution. Therefore, the air bullet wiring 15 can be easily formed without being limited to the pattern dimensions of the air bullet wiring 15.

In the embodiment of the present invention, the resist materials of the resist pattern body 12 and the resist pattern body 13 are 0DUR and naphthoquinone 1,2- of novolak resin, respectively.
Although a negative deep ultraviolet resist made of cyanodo-8-sulfonic acid ester is used, each resist material only needs to be selectively removable. Preferably, the resist pattern body 12 and the resist pattern body 13 are Resist materials that can be formed into cheek-like and overhang-like structures are preferable. Further, these resist materials may be composed of multiple layers.

(Effects of the Invention) As described above, by using the formation method of the present invention, the resist under the air bridge IJ horn wiring, which was difficult to remove using conventional methods, can be easily removed, and restrictions on the air bridge wiring dimensions can be avoided. . Therefore, it can be used for manufacturing high-output semiconductor devices and the like.

[Brief explanation of drawings]

Figures 1fa) to 1fd) are process cross-sectional views of the airb IJ and wiring for detailed explanation of the present invention.
Figures (a) to 2(e) are cross-sectional views of conventional air fritted wiring. 1.1... Base body, 2.4.12.13... Resist chimney turf body, 3, 14... Wiring metal, 5, 15...
・Air blitz wiring. Patent Applicant: Oki Electric Industry Co., Ltd. Agent: Toshiaki Suzuki ゛・j
To 4 Sono 11 car 15 Air 7 Su, Ji missing'plan/' Air 7'lj Ha layout L week song' side January (big loss (P9 No. 1)
Figure F 7'') Rami 7 = tJl hM = -IJ%
ifr km (rt ice die 1 shi J) Fig. 2

Claims (1)

[Scope of Claims] 1) forming a first resist pattern body on a first region of a base body; and a resist material that can be selectively removed with respect to the first resist pattern body on a second region of the base body. a step of forming a second resist pattern body, a step of laminating a wiring metal on the base from above, and a step of removing the second resist pattern body using a stripping liquid and removing the wiring metal on the second resist pattern body. (lift-off method) and forming an air bridge type wiring metal pattern body by removing the first resist pattern body using a stripping liquid. Production method. 2) The method of manufacturing a semiconductor device according to claim 1, wherein the first region and the second region partially overlap. 3) The method of manufacturing a semiconductor device according to claim 1, wherein the second resist pattern body has an overhang structure. 4) The method of manufacturing a semiconductor device according to claim 2, wherein the second resist pattern body has an overhang structure.