JPS634278B2 - - Google Patents
Info
- Publication number
- JPS634278B2 JPS634278B2 JP56098369A JP9836981A JPS634278B2 JP S634278 B2 JPS634278 B2 JP S634278B2 JP 56098369 A JP56098369 A JP 56098369A JP 9836981 A JP9836981 A JP 9836981A JP S634278 B2 JPS634278 B2 JP S634278B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- bubble
- detector
- substrate
- distance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0866—Detecting magnetic domains
Description
【発明の詳細な説明】
本発明は磁気バブルメモリ素子に関し、特にそ
のバブル磁区検出器の改良に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to magnetic bubble memory devices, and more particularly to improvements in bubble domain detectors thereof.
一般に磁性薄膜は面内方向に磁区の磁化容易軸
をもつているが、ある種の磁性材料、例えばオル
ソフエライト（RFeO3）や磁性ガーネツト等の
単結晶はＣ軸方向にのみ磁化容易軸を有する一軸
異方性をもつている。このような材料の単結晶薄
膜に垂直な適当な強度のバイアス磁界を加える
と、膜面に垂直な小さな円筒磁区（これを磁気バ
ブルと言う）ができる。この磁気バブルは外部磁
界を適当に変化させることにより移動さすことが
できる。磁気バブルメモリは前記単結晶の薄膜上
にパーマロイによる多数の薄膜微細パターンを形
成してバブルの伝播路となし、この伝播路の微細
パターンにおけるバブルの有無を情報の“１”、
“０”に対応させてメモリとして使用するもので
ある。 Generally, a magnetic thin film has an easy axis of magnetization of the magnetic domain in the in-plane direction, but certain magnetic materials, such as single crystals such as orthoferrite (RFeO 3 ) and magnetic garnet, have an easy axis of magnetization only in the C-axis direction. It has uniaxial anisotropy. When a bias magnetic field of appropriate strength perpendicular to a single crystal thin film of such a material is applied, small cylindrical magnetic domains (called magnetic bubbles) perpendicular to the film surface are formed. This magnetic bubble can be moved by appropriately changing the external magnetic field. The magnetic bubble memory forms a large number of permalloy thin film fine patterns on the single crystal thin film to serve as bubble propagation paths, and determines the presence or absence of bubbles in the fine patterns of the propagation paths as information "1".
It corresponds to "0" and is used as a memory.
そしてこの磁気バブルの検出方法は第１図に示
す如き方法が採られている。図において符号１は
パーマロイ等の磁性薄膜により多数の山形状パタ
ーン２を連接片３により連接して形成したバブル
磁区検出器、４はパーマロイ等の磁性薄膜により
多数の山形状パターン５を並べて形成したストレ
ツチヤである。このストレツチヤ４では矢印Ｐ方
向より転送されて来るバブル６を駆動磁界の一周
期毎に山形パターン列４−１，４−２…４−ｎと
順次送り、その間にバブルを引伸すのである。こ
の引伸ばされたバブル６′が検出器１に来ると、
その磁性膜は磁気抵抗抗果によりAB間の電気抵
抗が変化する。従つて予めAB間に一定の電流を
流しておけばバブルの有無を電圧変化として取出
して検知することができる。 The method for detecting this magnetic bubble is as shown in FIG. In the figure, numeral 1 is a bubble magnetic domain detector formed by connecting a large number of chevron-shaped patterns 2 by a connecting piece 3 using a magnetic thin film such as permalloy, and 4 is a bubble magnetic domain detector formed by arranging a large number of chevron-shaped patterns 5 using a magnetic thin film such as permalloy. It is a stretcher. In this stretcher 4, the bubbles 6 transferred in the direction of arrow P are sequentially sent to the chevron pattern rows 4-1, 4-2, . When this stretched bubble 6' comes to the detector 1,
The magnetic film changes the electrical resistance between A and B due to the magnetoresistance effect. Therefore, if a constant current is caused to flow between AB in advance, the presence or absence of bubbles can be extracted and detected as a voltage change.
ところがこのようなバルブ磁区検出器において
は、バブルが検出器の両端にからみつくことがあ
り、第２図に示す如く、低バイアス−高駆動磁界
において曲線Ｃの如くマージンが減少するという
欠点がある。本発明はこの欠点を改良するために
案出されたものである。 However, such a valve magnetic domain detector has the drawback that bubbles may become entangled with both ends of the detector, and the margin decreases as shown by curve C at low bias and high driving magnetic field, as shown in FIG. The present invention has been devised to improve this drawback.
このため本発明においては、磁気バブル用結晶
基板の上に、磁気バブルの発生器、伝播路、及び
磁気抵抗効果を利用したバブル磁区検出器等を薄
膜金属により形成して成る磁気バブルメモリ素子
において、バブル磁区検出器は、この両端部にお
ける基板との距離を、検出器中心部における基板
との距離よりも大としたことを特徴とするもので
ある。 Therefore, in the present invention, in a magnetic bubble memory element, a magnetic bubble generator, a propagation path, a bubble magnetic domain detector using a magnetoresistive effect, etc. are formed of a thin metal film on a magnetic bubble crystal substrate. The bubble magnetic domain detector is characterized in that the distance from the substrate at both ends is greater than the distance from the substrate at the center of the detector.
以下添付図面に基づいて本発明の実施例につき
詳細に説明する。 Embodiments of the present invention will be described in detail below based on the accompanying drawings.
第３図に実施例の平面図を、第４図に第３図の
−線における断面図を示す。図において符号
７は基板結晶であり、８はその上に約1000Åの厚
さにスパツタされたSiO2層である。９はSiO2層
の上に厚さ約4000Åの厚さに蒸着したコンダクタ
層よりホトリソグラフイ法により形成したコンダ
クタパターンである。なおこのコンダクタパター
ン９は予め検出器１０の端部及びリード部１１の
下に位置するように作成される。１２は耐熱性に
優れたポリラダーオルガノシロキサン又はPIQ等
の樹脂を塗布し高温（例えば350℃）で硬化した
樹脂層である。１０は樹脂層１２の上に約4000Å
の厚さに形成された検出器用のパーマロイパター
ンである。 FIG. 3 shows a plan view of the embodiment, and FIG. 4 shows a sectional view taken along the - line in FIG. 3. In the figure, numeral 7 is a substrate crystal, and 8 is a SiO 2 layer sputtered to a thickness of about 1000 Å thereon. 9 is a conductor pattern formed by photolithography from a conductor layer deposited to a thickness of about 4000 Å on the SiO 2 layer. Note that this conductor pattern 9 is created in advance so as to be located under the end of the detector 10 and the lead portion 11. 12 is a resin layer coated with a resin such as polyladder organosiloxane or PIQ having excellent heat resistance and cured at a high temperature (for example, 350° C.). 10 is about 4000 Å on the resin layer 12
This is a permalloy pattern for a detector formed to a thickness of .
このように形成された本実施例は基板７の表面
から検出器１０の端部及びリード部１１までの距
離l1が、検出器１０の中央部から基板表面までの
距離l2より大となつている。このため検出器１０
の端部及びリード部１１ではバブルを動かす駆動
力が弱くとも良く、逆に検出器中央部と同一駆動
力を与えるならば検出器１０の端部ではバブルは
駆動され易いことになり、従つて従来の如く検出
器１０の端部にバブルがからみつくようなことは
防止され、誤動作がなくなり動作マージンも第２
図に曲線Ｄ（点線）で示した如く広くなる。 In this embodiment formed in this manner, the distance l 1 from the surface of the substrate 7 to the end of the detector 10 and the lead portion 11 is larger than the distance l 2 from the center of the detector 10 to the substrate surface. ing. For this reason, the detector 10
The driving force for moving the bubble may be weak at the ends of the detector 10 and the lead part 11. Conversely, if the same driving force is applied to the center of the detector, the bubbles will be easily driven at the ends of the detector 10. This prevents bubbles from getting entangled with the end of the detector 10 as in the past, eliminates malfunctions, and improves the operating margin to the second level.
It becomes wider as shown by curve D (dotted line) in the figure.
また第５図及び第６図に他の実施例の各一部の
平面図を示す。図において符号１０は検出器、１
１はそのリード部、１３はエキスパンダである。
各図の検出器１０はバブルを差動増幅器で検出す
るための２個とダミーの１個を加えて合計３個が
形成されている。そして検出器１０の端部及びリ
ード部１１の下にはコンダクタパターン１４（太
い実線で示す）が形成されており、その作用効果
は前実施例と全く同様である。 Further, FIGS. 5 and 6 show plan views of parts of other embodiments. In the figure, numeral 10 is a detector;
1 is its lead portion, and 13 is an expander.
A total of three detectors 10 are formed in each figure, including two for detecting bubbles using a differential amplifier and one dummy detector. A conductor pattern 14 (indicated by a thick solid line) is formed at the end of the detector 10 and under the lead portion 11, and its operation and effect are exactly the same as in the previous embodiment.
以上説明した如く本発明の磁気バブルメモリ素
子は、そのバブル磁区検出器のリード部を基板よ
り遠ざけることにより、バブルのからみつきによ
る誤動作を防止し、動作マージンの拡大を可能と
したものであり、バブルメモリ素子の信頼性向上
に寄与するものである。 As explained above, the magnetic bubble memory element of the present invention prevents malfunctions due to entanglement of bubbles and expands the operating margin by placing the lead portion of the bubble magnetic domain detector away from the substrate. This contributes to improving the reliability of memory elements.
第１図は従来の磁気バブルメモリ素子のバブル
磁区検出器及びエキスパンダの平面図、第２図は
その動作マージンを示した特性線図、第３図は本
発明にかかる実施例の磁気バブルメモリ素子のバ
ブル磁区検出器の平面図、第４図は第３図の−
線における断面図、第５図及び第６図は他の実
施例の平面図である。
７……基板、８……SiO2層、９，１４……コ
ンダクタパターン、１０……バブル磁区検出器、
１１……検出器のリード部、１２……樹脂層。
FIG. 1 is a plan view of a bubble magnetic domain detector and an expander of a conventional magnetic bubble memory element, FIG. 2 is a characteristic diagram showing its operating margin, and FIG. 3 is a magnetic bubble memory of an embodiment according to the present invention. A plan view of the bubble magnetic domain detector of the element, Fig. 4 is the same as - in Fig. 3.
5 and 6 are plan views of other embodiments. 7... Substrate, 8... SiO 2 layer, 9, 14... Conductor pattern, 10... Bubble magnetic domain detector,
11... Lead part of the detector, 12... Resin layer.
Claims (1)
発生器、伝播路、及び磁気抵抗効果を利用したバ
ブル磁区検出器等を薄膜金属により形成して成る
磁気バブルメモリ素子において、バブル磁区検出
器は、その両端部における基板との距離を、検出
器中心部における基板との距離よりも大としたこ
とを特徴とする磁気バブルメモリ素子。 ２ 特許請求の範囲第１項記載の磁気バブルメモ
リ素子において、バブル磁区検出器と基板との距
離を大とする手段としてコンダクタ材料を用いた
ことを特徴とする磁気バブルメモリ素子。[Claims] 1. A magnetic bubble memory element in which a magnetic bubble generator, a propagation path, a bubble magnetic domain detector using a magnetoresistive effect, etc. are formed of a thin metal film on a magnetic bubble crystal substrate. , a magnetic bubble memory element characterized in that the bubble magnetic domain detector has a distance from the substrate at both ends thereof that is larger than a distance from the substrate at the center of the detector. 2. A magnetic bubble memory element according to claim 1, characterized in that a conductor material is used as means for increasing the distance between the bubble magnetic domain detector and the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56098369A JPS581877A (en) | 1981-06-26 | 1981-06-26 | Magnetic bubble memory element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56098369A JPS581877A (en) | 1981-06-26 | 1981-06-26 | Magnetic bubble memory element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS581877A JPS581877A (en) | 1983-01-07 |
| JPS634278B2 true JPS634278B2 (en) | 1988-01-28 |
Family
ID=14217959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56098369A Granted JPS581877A (en) | 1981-06-26 | 1981-06-26 | Magnetic bubble memory element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS581877A (en) |
-
1981
- 1981-06-26 JP JP56098369A patent/JPS581877A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS581877A (en) | 1983-01-07 |
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