JPS6344331A - Recording method for optical memory - Google Patents

Recording method for optical memory

Info

Publication number
JPS6344331A
JPS6344331A JP61188268A JP18826886A JPS6344331A JP S6344331 A JPS6344331 A JP S6344331A JP 61188268 A JP61188268 A JP 61188268A JP 18826886 A JP18826886 A JP 18826886A JP S6344331 A JPS6344331 A JP S6344331A
Authority
JP
Japan
Prior art keywords
reflectance
reflectivity
power laser
temp
recording medium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61188268A
Other languages
Japanese (ja)
Other versions
JP2532068B2 (en
Inventor
Yasuo Sawada
康雄 沢田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP61188268A priority Critical patent/JP2532068B2/en
Publication of JPS6344331A publication Critical patent/JPS6344331A/en
Application granted granted Critical
Publication of JP2532068B2 publication Critical patent/JP2532068B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Optical Recording Or Reproduction (AREA)

Abstract

PURPOSE:To permit recording of a ternary coded signal and to improve recording density by projecting a high power laser and lower power laser in two stages onto an optical information recording medium formed with a thin alloy film composed of Au and Si on a substrate. CONSTITUTION:The Au-Si alloy is in the amorphous state and the reflectivity thereof is Ra from a room temp. to temp. T1 or below when the laser luminous flux having a prescribed temp. distribution is projected to the thin Au-Si alloy film. The phase transfer from the amorphous to crystal arises and the reflectivity Rb decreases at the temp. T1. Au precipitates and the reflectivity Rc increases to make Rb<Ra<Rc at T2 higher than the temp. T1. The Au is precipitated to increase the reflectivity Rc by projecting the high power laser to the optical information recording medium formed with the thin Au-Si alloy film on the substrate. The phase transfer to the crystal is induced to increase the reflectivity Rc by projecting the low power laser thereto. The ternary coded writing is thus permitted.

Description

【発明の詳細な説明】 (技術分野) 本発明は、光情報記録媒体を用いる光メモリー記録方法
に関するものであり、特に、記録密度を高めることが可
能な光メモリー記録方法に関する。
DETAILED DESCRIPTION OF THE INVENTION (Technical Field) The present invention relates to an optical memory recording method using an optical information recording medium, and particularly to an optical memory recording method capable of increasing recording density.

(従来技術) 従来の光メモリー記録方法に用いられる光情報記録媒体
は、2値化された情報信号によってオン、オフするレー
ザー光束を照射することによってピントを形成し、ある
いは相転移による反射率変化を生ぜしめ、これによって
情報信号を記録するようになっている。何れにしても従
来の光メモリー記録方法に用いられる光情報記録媒体は
、ビットの有無あるいは反射率の変化の有無による2値
化信号が記録されるものである。
(Prior art) Optical information recording media used in conventional optical memory recording methods form a focus by irradiating a laser beam that turns on and off according to a binary information signal, or change reflectance due to phase transition. is used to record information signals. In any case, the optical information recording medium used in the conventional optical memory recording method records a binary signal depending on the presence or absence of bits or the presence or absence of a change in reflectance.

ここで、光情報記録媒体に3値の信号を記録することが
できれば、光情報記録媒体の記録密度を大幅に向上させ
ることができるはずである。
Here, if it were possible to record ternary signals on an optical information recording medium, it would be possible to significantly improve the recording density of the optical information recording medium.

(目的) 本発明の目的は、光情報記録媒体に3値化された信号を
記録することを可能にすることにより記録密度を大幅に
向上させることを可能にした光メモリー記録方法を提供
することにある。
(Objective) An object of the present invention is to provide an optical memory recording method that makes it possible to significantly improve recording density by making it possible to record ternary signals on an optical information recording medium. It is in.

(構成) 本発明は、基板上にAuとSiの合金薄膜を形成した光
情報記録媒体を用い、上記光情報記録媒体に対する情報
書き込み用レーザーのパワーを2段階とし、高パワーの
レーザーを照射することによりAuを析出させて反射率
を大きくし、低パワーのレーザーを照射することにより
アモルファスから結晶への相転移を生ぜしめて反射率を
低下させ、もって、3値書き込みを可能にしたことを特
徴とする。
(Structure) The present invention uses an optical information recording medium in which an alloy thin film of Au and Si is formed on a substrate, and the power of a laser for information writing on the optical information recording medium is set to two levels, and a high-power laser is irradiated. By precipitating Au to increase the reflectance, and by irradiating it with a low-power laser, a phase transition from amorphous to crystal occurs and the reflectance decreases, thereby making three-value writing possible. shall be.

第1図は、Au  Si合金の温度に対する光の反射率
の変化を示す。ただし、サンプル全体を熱処理したとき
の現象ではなく、所定の温度分布をもつレーザー光束を
照射したときの上記温度分布に対応した反射率変化を示
す。また、各状態の反射率は、既知の反射率を持つA 
I MWに上記のように所定の温度分布を持つレーザー
光束を照射してその反射率を読み出し、これと比較して
求めたものである。
FIG. 1 shows the change in light reflectance with respect to temperature of the AuSi alloy. However, the change in reflectance corresponding to the temperature distribution when the sample is irradiated with a laser beam having a predetermined temperature distribution is shown, not the phenomenon when the entire sample is heat-treated. Also, the reflectance of each state is A with a known reflectance.
The I MW was irradiated with a laser beam having a predetermined temperature distribution as described above, the reflectance was read out, and the reflectance was compared with this.

第1図に示されているように、室温から所定のある温度
T1未満まではAu−Si合金はアモルファス状態であ
り、上記温度T1においてアモルファスから結晶への相
転移を生ぜしめて反射率は低下する。
As shown in Figure 1, the Au-Si alloy is in an amorphous state from room temperature to below a certain temperature T1, and at the temperature T1, a phase transition from amorphous to crystal occurs and the reflectance decreases. .

さらに温度T1よりも高い所定の温度T2になるとAu
が析出して反射率が増加する。上記アモルファス状態に
おける反射率をRa、結晶状態における反射率をRb、
 Auの析出状態における反射率をRcとすると、Rb
 < Ra < Rcとなる。
Furthermore, when the temperature reaches a predetermined temperature T2 higher than the temperature T1, Au
is precipitated and the reflectance increases. The reflectance in the amorphous state is Ra, the reflectance in the crystalline state is Rb,
If the reflectance in the Au precipitation state is Rc, then Rb
<Ra<Rc.

第2図及び第3図は^UとSiの合金に書き込み用のレ
ーザー光束を照射した場合における照射部分の反射率分
布を示すもので、第2図は高パワーのレーザー光束を照
射した場合、第3図は低パワーのレーザー光束を照射し
た場合を示す。高パワーのレーザー光束の場合、第2図
(a)(b)に示されているように温度がT2よりも高
い中心部1の回りに温度がT2よりも低くTlよりも高
い部分2が分布し、さらにその外周部は温度T1よりも
低くなっている。これに対し低パワーのレーザー光束の
場合は第3図(a)(b)に示されているように温度T
2よりも低く温度T1よりも高い部分3が分布し、その
外周部は温度T1よりも低くなっている。
Figures 2 and 3 show the reflectance distribution of the irradiated area when an alloy of U and Si is irradiated with a laser beam for writing. FIG. 3 shows the case of irradiation with a low power laser beam. In the case of a high-power laser beam, as shown in Fig. 2 (a) and (b), a portion 2 whose temperature is lower than T2 and higher than Tl is distributed around a central portion 1 whose temperature is higher than T2. However, the temperature of the outer peripheral portion is lower than T1. On the other hand, in the case of a low-power laser beam, the temperature T
A portion 3 having a temperature lower than 2 and higher than temperature T1 is distributed, and the outer peripheral portion thereof is lower than temperature T1.

第2図(C)は第2図(a)(b)に示されているよう
な高パワーのレーザー光束をAuとSiの合金に照射し
た場合の反射率の変化を示しており、温度がT2よりも
高い部分lに対応する部分は第1図で説明したようにA
uが析出して反射率が高(なり、温度がT2よりも低く
Tlよりも高い部分2に対応する部分は第1図で説明し
たようにアモルファスから結晶への相転移を生ぜしめ、
上記反射率の高い部分の周りに反射率の低い部分ができ
る。これに対して第3図(a)(b)に示されているよ
うな低パワーのレーザー光束を照射した場合は、第3図
(c)に示されているように温度T2よりも低く温度T
1よりも高い部分3に対応する部分の反射率が低(なる
だけであり、Auの析出がないから反射率が高くなるこ
とはない。
Figure 2 (C) shows the change in reflectance when an alloy of Au and Si is irradiated with a high-power laser beam as shown in Figures 2 (a) and (b). The part corresponding to the part l higher than T2 is A as explained in FIG.
u precipitates and the reflectance becomes high (and the temperature is lower than T2 and higher than Tl, corresponding to part 2, as explained in FIG. 1, a phase transition from amorphous to crystal occurs,
A region with low reflectance is formed around the above-mentioned region with high reflectance. On the other hand, when irradiating with a low-power laser beam as shown in Figures 3(a) and (b), the temperature is lower than the temperature T2 as shown in Figure 3(c). T
The reflectance of the portion corresponding to the portion 3, which is higher than 1, is low (it just becomes low), and the reflectance does not become high because there is no Au precipitation.

以上のことから、基板上にAuとSiの合金薄膜を形成
した光情報記録媒体を用い、この媒体に対する情報書き
込み用のレーザーのパワーを2段階に切り換えるように
すれば、反射率の高い部分と反射率の低い部分と反射率
が変化しない中間部分とを形成することが可能であり、
もって、3値化された情報信号を記録することが可能で
ある。
Based on the above, if we use an optical information recording medium in which a thin alloy film of Au and Si is formed on a substrate and switch the power of the laser for writing information to this medium in two stages, it is possible to It is possible to form a portion with low reflectance and an intermediate portion where reflectance does not change,
Therefore, it is possible to record a ternary information signal.

なお、光学顕微鏡で確認した結果、第2図に示されてい
る高パワーのレーザー光束の場合、高パワーの部分1の
周りの低パワーの部分2を含めた書き込み径が、第3図
に示されている低パワーのレーザー光束の場合に比べて
約1.3倍となり、これに従ってビットピッチを大きく
しなければならないが、それ程大幅にピッチが拡大され
るものではなく、それよりも、3値化された信号を記録
することが可能であることにより、記録密度を大幅に拡
大することが可能である。
As a result of checking with an optical microscope, in the case of the high power laser beam shown in Figure 2, the writing diameter including the low power part 2 around the high power part 1 is as shown in Figure 3. The bit pitch is approximately 1.3 times that of the low-power laser beam that is used, and the bit pitch must be increased accordingly, but the pitch is not expanded that drastically. By being able to record encoded signals, it is possible to significantly expand the recording density.

次に、本発明の実施例について説明する。Next, examples of the present invention will be described.

1mm厚のガラス基板に二元電子ビーム蒸着によりAu
70原子%、Si30原子%の組成でAu −Si合金
薄膜を200人の厚さで設け、これを光情報記録媒体の
サンプルとして用いた。このサンプルを固定し、これに
、ビーム径を2μmに絞ったHe −Neレーザーを8
m−及び51で100m5ec照射して書き込みを行い
、次に1mWのレーザー光束で読み出しを行った。アモ
ルファス状態の非書き込み部の読み出し電圧をVa、 
Au析出部である8mwMき込み部の読み出し電圧をν
b、結晶状態である5I書き込み邪の読み出し電圧をV
cとすると、νa : Vb ニジc=5:2:8の信
号比が得られた。
Au was deposited on a 1 mm thick glass substrate by dual electron beam evaporation.
An Au--Si alloy thin film with a composition of 70 atomic % and 30 atomic % Si was provided to a thickness of 200 mm, and this was used as a sample of an optical information recording medium. This sample was fixed, and a He-Ne laser with a beam diameter of 2 μm was applied to it.
Writing was performed by irradiating with m- and 51 for 100 m5ec, and then reading was performed with a laser beam of 1 mW. The read voltage of the non-written part in the amorphous state is Va,
The readout voltage of the 8 mwM deposited part, which is the Au deposited part, is ν
b. The read voltage of 5I write error in the crystal state is V
c, a signal ratio of νa:Vb nijic=5:2:8 was obtained.

このように、上記実施例によれば、書き込み用レーザー
のパワーを2段階に切り換えることによって3値化され
た情報信号を記録することが可能であり、もって、記録
密度を大幅に向上させることができる。
As described above, according to the above embodiment, it is possible to record a ternary information signal by switching the power of the writing laser in two stages, thereby greatly improving the recording density. can.

(効果) 本発明によれば、基板上にAuとSiの合金薄膜を形成
した光情報記録媒体を用い、この記録媒体に対する情報
信号の書き込み用レーザーのパワーを2段階に切り換え
ることにより3値書き込みを可能にしたため、記録密度
を大幅に向上させることが可能になった。
(Effects) According to the present invention, an optical information recording medium in which an alloy thin film of Au and Si is formed on a substrate is used, and ternary value writing is performed by switching the power of a laser for writing information signals to the recording medium in two stages. This made it possible to significantly improve recording density.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の詳細な説明するためのAu−Si合金
の温度に対する反射率変化を示す線図、第2図は高パワ
ーのレーザー光束の温度及びパワー分布とこのレーザー
光束の照射によるAu−Si合金の反射率分布を示す線
図、第3図は低パワーのレーザー光束の温度及びパワー
分布とこのレーザー光束の照射によるAu−Si合金の
反射率分布を示す線図である。
Fig. 1 is a diagram showing the reflectance change with respect to temperature of Au-Si alloy for explaining the present invention in detail, and Fig. 2 is a diagram showing the temperature and power distribution of a high-power laser beam and the Au-Si alloy due to irradiation with this laser beam. FIG. 3 is a diagram showing the reflectance distribution of the -Si alloy. FIG. 3 is a diagram showing the temperature and power distribution of a low-power laser beam and the reflectance distribution of the Au-Si alloy due to irradiation with this laser beam.

Claims (1)

【特許請求の範囲】[Claims] 基板上にAuとSiの合金薄膜を形成した光情報記録媒
体を用いる光メモリー記録方法であって、上記光情報記
録媒体に対する情報書き込み用レーザーのパワーを2段
階とし、高パワーのレーザーを照射することによりAu
を析出させて反射率を大きくし、低パワーのレーザーを
照射することによりアモルファスから結晶への相転移を
生ぜしめて反射率を低下させ、もって、3値書き込みを
行うことを可能にした光メモリー記録方法。
An optical memory recording method using an optical information recording medium in which a thin alloy film of Au and Si is formed on a substrate, in which the power of a laser for writing information on the optical information recording medium is set to two levels, and a high-power laser is irradiated. In some cases, Au
Optical memory recording that increases the reflectance by precipitating it, and then irradiating it with a low-power laser causes a phase transition from amorphous to crystal to lower the reflectance, making it possible to perform three-value writing. Method.
JP61188268A 1986-08-11 1986-08-11 Optical memory-recording method Expired - Fee Related JP2532068B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61188268A JP2532068B2 (en) 1986-08-11 1986-08-11 Optical memory-recording method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61188268A JP2532068B2 (en) 1986-08-11 1986-08-11 Optical memory-recording method

Publications (2)

Publication Number Publication Date
JPS6344331A true JPS6344331A (en) 1988-02-25
JP2532068B2 JP2532068B2 (en) 1996-09-11

Family

ID=16220696

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61188268A Expired - Fee Related JP2532068B2 (en) 1986-08-11 1986-08-11 Optical memory-recording method

Country Status (1)

Country Link
JP (1) JP2532068B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01251323A (en) * 1988-03-30 1989-10-06 Aiwa Co Ltd Optical disk reproducing device
JPH0214427A (en) * 1988-06-30 1990-01-18 Toshiba Corp Information recorder, method for recording information and information reproducing device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01251323A (en) * 1988-03-30 1989-10-06 Aiwa Co Ltd Optical disk reproducing device
JPH0214427A (en) * 1988-06-30 1990-01-18 Toshiba Corp Information recorder, method for recording information and information reproducing device

Also Published As

Publication number Publication date
JP2532068B2 (en) 1996-09-11

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