JPS6345189A - High heat-conductive substrate - Google Patents
High heat-conductive substrateInfo
- Publication number
- JPS6345189A JPS6345189A JP22758586A JP22758586A JPS6345189A JP S6345189 A JPS6345189 A JP S6345189A JP 22758586 A JP22758586 A JP 22758586A JP 22758586 A JP22758586 A JP 22758586A JP S6345189 A JPS6345189 A JP S6345189A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum nitride
- conductive substrate
- substrate
- nitride layer
- high heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims description 20
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- 238000010292 electrical insulation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000011224 oxide ceramic Substances 0.000 description 2
- PQLAYKMGZDUDLQ-UHFFFAOYSA-K aluminium bromide Chemical compound Br[Al](Br)Br PQLAYKMGZDUDLQ-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum compound Chemical class 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- JMBPWMGVERNEJY-UHFFFAOYSA-N helium;hydrate Chemical compound [He].O JMBPWMGVERNEJY-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
Landscapes
- Laminated Bodies (AREA)
- Ceramic Products (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】 〔技術分野〕 この発明は、電気絶縁材料の製造技術の分野に属する。[Detailed description of the invention] 〔Technical field〕 This invention belongs to the field of manufacturing technology for electrically insulating materials.
特に、高い熱伝導を必要とする電気回路用の基板を製造
する技術の分野に属する。さらには、セラミ’７りに関
する技術分野にも属する。In particular, it belongs to the field of technology for manufacturing boards for electrical circuits that require high thermal conductivity. Furthermore, it also belongs to the technical field related to ceramic repair.
ＩＣ等に代表される半導体素子の高集積化や大電力化が
進み、これに従って放熱性の良い電気絶縁材料が要求さ
れるようになった。これに応えて各種の高熱伝導性基板
が提案されている。これらのうちの代表的な例として多
層構造を有する基板が提案されている。たとえば、鉄ま
たはアルミニュウム素地板の面に樹脂層を形成して、放
熱性と絶縁性を具備させた基板、あるいはアルミニウム
素地板の面にアルマイト’Ｒを形成し、その上に樹脂層
を形成して構成した、電気絶縁性と高熱伝導性を具備さ
せた基板がそれに該当する。BACKGROUND ART As semiconductor elements such as ICs and the like have become more highly integrated and have more power, electrical insulating materials with good heat dissipation properties have become required. In response to this demand, various highly thermally conductive substrates have been proposed. As a representative example of these, a substrate having a multilayer structure has been proposed. For example, a resin layer is formed on the surface of an iron or aluminum base plate to provide heat dissipation and insulation properties, or an alumite 'R is formed on the surface of an aluminum base plate and a resin layer is formed on it. This includes a substrate that has electrical insulation and high thermal conductivity.
一方、セラミックを素材として製造された基板として窒
化アルミニウムセラミック、酸化へリリウムセラミソク
、炭化ケイ素−酸化ベリリウムセラミック等が知られて
いる。On the other hand, aluminum nitride ceramics, helium oxide ceramics, silicon carbide-beryllium oxide ceramics, and the like are known as substrates manufactured from ceramic materials.
しかし、上記の各基板は熱伝導性が充分でなく、あるい
は価格が高い等の欠点があり、この両面において満足さ
れるような基板は未だ提供されてはいない、そこで、熱
伝導、価格の両方の点で優れた高熱伝導性基板が、業界
において要望されていた。However, each of the above-mentioned substrates has drawbacks such as insufficient thermal conductivity or high price, and a substrate that satisfies both of these aspects has not yet been provided. There has been a demand in the industry for a highly thermally conductive substrate that is excellent in terms of.
この発明は、電気絶縁性を有すると共に、熱伝導性に優
れた基板を提供することを目的とする。An object of the present invention is to provide a substrate having electrical insulation properties and excellent thermal conductivity.
σ発明の開示〕
この発明は、黒鉛素地板の表面に窒化アルミニウム層を
形成してなる点に特徴を有する。Disclosure of the σ Invention This invention is characterized in that an aluminum nitride layer is formed on the surface of a graphite base plate.
窒化アルミニウム層は、例えば、アルミニウム化合物の
電気から目的の物・質をたい積させる、いわゆるＣＶＤ
法により形成される。ただし、特に窒化アルミニウム層
の製法を限定する趣旨ではない。目的の層が得られれば
どのような方法によるのも自由である。たとえば、窒化
アルミニウム層を形成する場合、反応ガスとしてＡ／１
Ｂｒ３、Ｎ２、Ｈ２およびＡｒを使用し、反応管内圧力
を２〜１００トールとし、誘導コイルを使用してプラズ
マ放電を発生させ、素地板温度は６００〜８００℃にし
て窒化アルミニウム層を生成させる。ただし、この条件
は一例である。窒化アルミニウム層の厚みは、特に限定
する趣旨ではないが、４〜３００μが望ましい。４μを
下回ると電気絶縁性に難点があり、これより厚みが大き
い方では特性的には問題ないが、３００μ以上の層を形
成することは、黒鉛基体とのミスマツチによるはく離等
の問題が生じる。また、ドクターブレード法による窒化
アルミニウム基板の製法と比較しても特に優位性は見い
出せない。For example, the aluminum nitride layer can be formed using so-called CVD, which deposits a desired substance or quality from the electricity of an aluminum compound.
Formed by law. However, this is not intended to specifically limit the manufacturing method of the aluminum nitride layer. Any method can be used as long as the desired layer can be obtained. For example, when forming an aluminum nitride layer, A/1 is used as the reactive gas.
Using Br3, N2, H2 and Ar, the pressure inside the reaction tube is 2-100 Torr, an induction coil is used to generate plasma discharge, and the substrate temperature is 600-800°C to form an aluminum nitride layer. However, this condition is just an example. Although the thickness of the aluminum nitride layer is not particularly limited, it is preferably 4 to 300 μm. If the thickness is less than 4μ, there is a problem with electrical insulation, and if the thickness is larger than this, there is no problem in terms of characteristics, but forming a layer with a thickness of 300μ or more causes problems such as peeling due to mismatch with the graphite substrate. Moreover, no particular superiority can be found when compared with the method for manufacturing aluminum nitride substrates using the doctor blade method.
（実施例） 窒化アルミニウム層は、ＣＶＤ法を採用して形成した。(Example) The aluminum nitride layer was formed using a CVD method.
すなわち反応ガスとしては、ＡｌＢｒ３、Ｎ２Ｈ２およ
びＡｒを使用し、反応管内圧力を１０トールとし、誘導
コイルを使用してプラズマ放電を発生させ、素地板温度
は７００ ’Ｃで、窒化アルミニウム層を作成すること
により、各種の層厚を有する高熱伝導性基板を作成した
。That is, AlBr3, N2H2, and Ar are used as reaction gases, the pressure inside the reaction tube is 10 Torr, plasma discharge is generated using an induction coil, and the base plate temperature is 700'C to create an aluminum nitride layer. As a result, highly thermally conductive substrates with various layer thicknesses were created.
第１表に、これらの基板の熱伝導性を、熱抵抗値で示し
た。Table 1 shows the thermal conductivity of these substrates in terms of thermal resistance values.
なお、比較例としては、９６％アルミナ基板、窒化アル
ミニウム基板および樹脂／Ａ／２複合基板の熱抵抗値を
示した。As comparative examples, the thermal resistance values of a 96% alumina substrate, an aluminum nitride substrate, and a resin/A/2 composite substrate are shown.
なお、熱抵抗値は、３鶴×３鶴のシリコンチップを実装
した場合の値である。Note that the thermal resistance value is a value when 3 cranes x 3 cranes of silicon chips are mounted.
この発明に係る熱伝導性基板は、黒鉛素地板面に窒化ア
ルミニウム層を形成したことを特徴とするので、電気絶
縁性と熱伝導性に優れているという特徴がある。The thermally conductive substrate according to the present invention is characterized by having an aluminum nitride layer formed on the surface of the graphite base plate, and is therefore characterized by excellent electrical insulation and thermal conductivity.
［以下余白コ 第 １ 表[Margin below] Chapter 1 Table
Claims (2)
とを特徴とする熱伝導性基板。(1) A thermally conductive substrate characterized by forming an aluminum nitride layer on a graphite base plate.
ることを特徴とする特許請求の範囲第１項記載の熱伝導
性基板。(2) The thermally conductive substrate according to claim 1, wherein the aluminum nitride layer has a thickness of 4 to 300 μm.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61-95045 | 1986-04-24 | ||
| JP9504586 | 1986-04-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6345189A true JPS6345189A (en) | 1988-02-26 |
| JPH0323513B2 JPH0323513B2 (en) | 1991-03-29 |
Family
ID=14127095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22758586A Granted JPS6345189A (en) | 1986-04-24 | 1986-09-25 | High heat-conductive substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6345189A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006522732A (en) * | 2003-04-14 | 2006-10-05 | スケルトン テクノロジーズ アクチエンゲゼルシャフト | Method for producing diamond composite material |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3219545B2 (en) * | 1993-06-16 | 2001-10-15 | 電気化学工業株式会社 | Method for manufacturing aluminum oxide substrate having copper circuit |
-
1986
- 1986-09-25 JP JP22758586A patent/JPS6345189A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7959887B2 (en) | 2003-04-04 | 2011-06-14 | Element Six Limited | Method for manufacturing a diamond composite |
| JP2006522732A (en) * | 2003-04-14 | 2006-10-05 | スケルトン テクノロジーズ アクチエンゲゼルシャフト | Method for producing diamond composite material |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0323513B2 (en) | 1991-03-29 |
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