JPS6351556B2 - - Google Patents

Info

Publication number
JPS6351556B2
JPS6351556B2 JP57025016A JP2501682A JPS6351556B2 JP S6351556 B2 JPS6351556 B2 JP S6351556B2 JP 57025016 A JP57025016 A JP 57025016A JP 2501682 A JP2501682 A JP 2501682A JP S6351556 B2 JPS6351556 B2 JP S6351556B2
Authority
JP
Japan
Prior art keywords
layer
semiconductor laser
face
laser device
mode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57025016A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58141587A (ja
Inventor
Masasue Okajima
Naoto Mogi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP2501682A priority Critical patent/JPS58141587A/ja
Publication of JPS58141587A publication Critical patent/JPS58141587A/ja
Publication of JPS6351556B2 publication Critical patent/JPS6351556B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2501682A 1982-02-18 1982-02-18 半導体レ−ザ装置 Granted JPS58141587A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2501682A JPS58141587A (ja) 1982-02-18 1982-02-18 半導体レ−ザ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2501682A JPS58141587A (ja) 1982-02-18 1982-02-18 半導体レ−ザ装置

Publications (2)

Publication Number Publication Date
JPS58141587A JPS58141587A (ja) 1983-08-22
JPS6351556B2 true JPS6351556B2 (2) 1988-10-14

Family

ID=12154110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2501682A Granted JPS58141587A (ja) 1982-02-18 1982-02-18 半導体レ−ザ装置

Country Status (1)

Country Link
JP (1) JPS58141587A (2)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3728566A1 (de) * 1987-08-27 1989-03-09 Telefunken Electronic Gmbh Optoelektronisches halbleiterbauelement
JPH10163563A (ja) * 1996-11-29 1998-06-19 Furukawa Electric Co Ltd:The 半導体レーザ
JP6737158B2 (ja) * 2016-12-08 2020-08-05 住友電気工業株式会社 量子カスケード半導体レーザ
JP2018098263A (ja) * 2016-12-08 2018-06-21 住友電気工業株式会社 量子カスケード半導体レーザ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5639069B2 (2) * 1973-12-24 1981-09-10

Also Published As

Publication number Publication date
JPS58141587A (ja) 1983-08-22

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