JPS58141587A - 半導体レ−ザ装置 - Google Patents

半導体レ−ザ装置

Info

Publication number
JPS58141587A
JPS58141587A JP2501682A JP2501682A JPS58141587A JP S58141587 A JPS58141587 A JP S58141587A JP 2501682 A JP2501682 A JP 2501682A JP 2501682 A JP2501682 A JP 2501682A JP S58141587 A JPS58141587 A JP S58141587A
Authority
JP
Japan
Prior art keywords
active layer
layer
mode
semiconductor laser
end surfaces
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2501682A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6351556B2 (2
Inventor
Masasue Okajima
岡島　正季
Naoto Mogi
茂木　直人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2501682A priority Critical patent/JPS58141587A/ja
Publication of JPS58141587A publication Critical patent/JPS58141587A/ja
Publication of JPS6351556B2 publication Critical patent/JPS6351556B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2501682A 1982-02-18 1982-02-18 半導体レ−ザ装置 Granted JPS58141587A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2501682A JPS58141587A (ja) 1982-02-18 1982-02-18 半導体レ−ザ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2501682A JPS58141587A (ja) 1982-02-18 1982-02-18 半導体レ−ザ装置

Publications (2)

Publication Number Publication Date
JPS58141587A true JPS58141587A (ja) 1983-08-22
JPS6351556B2 JPS6351556B2 (2) 1988-10-14

Family

ID=12154110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2501682A Granted JPS58141587A (ja) 1982-02-18 1982-02-18 半導体レ−ザ装置

Country Status (1)

Country Link
JP (1) JPS58141587A (2)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3728566A1 (de) * 1987-08-27 1989-03-09 Telefunken Electronic Gmbh Optoelektronisches halbleiterbauelement
EP0845841A3 (en) * 1996-11-29 1999-02-17 The Furukawa Electric Co., Ltd. Semiconductor laser device
US20180166858A1 (en) * 2016-12-08 2018-06-14 Sumitomo Electric Industries, Ltd. Quantum cascade laser
US20180166860A1 (en) * 2016-12-08 2018-06-14 Sumitomo Electric Industries, Ltd Quantum cascade laser

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5096189A (2) * 1973-12-24 1975-07-31

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5096189A (2) * 1973-12-24 1975-07-31

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3728566A1 (de) * 1987-08-27 1989-03-09 Telefunken Electronic Gmbh Optoelektronisches halbleiterbauelement
EP0845841A3 (en) * 1996-11-29 1999-02-17 The Furukawa Electric Co., Ltd. Semiconductor laser device
US5953358A (en) * 1996-11-29 1999-09-14 The Furukawa Electric Co. Ltd. Semiconductor laser device
US20180166858A1 (en) * 2016-12-08 2018-06-14 Sumitomo Electric Industries, Ltd. Quantum cascade laser
US20180166860A1 (en) * 2016-12-08 2018-06-14 Sumitomo Electric Industries, Ltd Quantum cascade laser
US10312667B2 (en) * 2016-12-08 2019-06-04 Sumitomo Electric Industries, Ltd. Quantum cascade laser

Also Published As

Publication number Publication date
JPS6351556B2 (2) 1988-10-14

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