JPS6354295U - - Google Patents
Info
- Publication number
- JPS6354295U JPS6354295U JP14744586U JP14744586U JPS6354295U JP S6354295 U JPS6354295 U JP S6354295U JP 14744586 U JP14744586 U JP 14744586U JP 14744586 U JP14744586 U JP 14744586U JP S6354295 U JPS6354295 U JP S6354295U
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin
- silicon nitride
- nitride film
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000010408 film Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000012212 insulator Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Description
第１図は本考案の実施例を示す断面図、第２図
は従来の薄膜ＥＬ素子断面図である。 １……透明絶縁基板、２……前面電極、３……
第１誘電体層、４……発光層、５……第２誘電体
層、６……背面電極、７……絶縁体薄膜、８……
窒化シリコン膜。
は従来の薄膜ＥＬ素子断面図である。 １……透明絶縁基板、２……前面電極、３……
第１誘電体層、４……発光層、５……第２誘電体
層、６……背面電極、７……絶縁体薄膜、８……
窒化シリコン膜。
Claims (1)
- 薄膜発光層を第１、第２の絶縁体薄膜層でサン
ドイツチ状に挟持したものに、少なくとも一方が
透明な前面及び背面電極を設けた薄膜ＥＬ素子に
おいて、前記背面電極を被覆する絶縁体薄膜を設
け、さらにその上部にＥＣＲＣＶＤ法による窒化
シリコン膜を設けたことを特徴とする薄膜ＥＬ素
子。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14744586U JPS6354295U (ja) | 1986-09-26 | 1986-09-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14744586U JPS6354295U (ja) | 1986-09-26 | 1986-09-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6354295U true JPS6354295U (ja) | 1988-04-12 |
Family
ID=31060811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14744586U Pending JPS6354295U (ja) | 1986-09-26 | 1986-09-26 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6354295U (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000058258A (ja) * | 1998-07-30 | 2000-02-25 | Hewlett Packard Co <Hp> | 有機電界発光デバイス用浸透バリヤ― |
-
1986
- 1986-09-26 JP JP14744586U patent/JPS6354295U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000058258A (ja) * | 1998-07-30 | 2000-02-25 | Hewlett Packard Co <Hp> | 有機電界発光デバイス用浸透バリヤ― |