JPS6355437U - - Google Patents
Info
- Publication number
- JPS6355437U JPS6355437U JP14823386U JP14823386U JPS6355437U JP S6355437 U JPS6355437 U JP S6355437U JP 14823386 U JP14823386 U JP 14823386U JP 14823386 U JP14823386 U JP 14823386U JP S6355437 U JPS6355437 U JP S6355437U
- Authority
- JP
- Japan
- Prior art keywords
- vapor phase
- growth apparatus
- phase growth
- growth
- substance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001947 vapour-phase growth Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 1
Description
第１図は本考案による一実施例の気相成長装置
の側断面図、第２図は従来の赤外線加熱方式の気
相成長装置の側断面図、第３図は従来の抵抗加熱
方式の気相成長装置の側断面図、である。
図において、１は反応管、２はソースチヤンバ
、３はソースボートＡ、４はソースボートＢ、５
はライナ管、６は基板ホルダ、７は成長基板、８
はキヤツプ、９ａはガス導入口、９ｂはガス導入
口、９ｃはガス導入口、１０は赤外線ランプ、１
１は反射板、１２は発熱板、を示す。
FIG. 1 is a side sectional view of a vapor phase growth apparatus according to an embodiment of the present invention, FIG. 2 is a side sectional view of a conventional infrared heating type vapor phase growth apparatus, and FIG. 3 is a side sectional view of a conventional resistance heating type vapor growth apparatus. It is a side sectional view of a phase growth apparatus. In the figure, 1 is a reaction tube, 2 is a source chamber, 3 is a source boat A, 4 is a source boat B, and 5
is a liner tube, 6 is a substrate holder, 7 is a growth substrate, 8
is a cap, 9a is a gas inlet, 9b is a gas inlet, 9c is a gas inlet, 10 is an infrared lamp, 1
1 is a reflecting plate, and 12 is a heat generating plate.
Claims (1)
装置において、 反応管１内部に赤外線を吸収して発熱する物質
の板１２を配設し、成長素材ガスを発生させるソ
ースチヤンバ２及び成長領域のライナ管５を均一
に加熱するようにしたことを特徴とする気相成長
装置。[Scope of Claim for Utility Model Registration] In a vapor phase growth apparatus using an infrared lamp as a heating means, a source chamber 2 in which a plate 12 of a substance that absorbs infrared rays and generates heat is disposed inside a reaction tube 1 to generate a growth material gas. and a vapor phase growth apparatus characterized in that the liner tube 5 in the growth region is heated uniformly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14823386U JPS6355437U (en) | 1986-09-26 | 1986-09-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14823386U JPS6355437U (en) | 1986-09-26 | 1986-09-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6355437U true JPS6355437U (en) | 1988-04-13 |
Family
ID=31062312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14823386U Pending JPS6355437U (en) | 1986-09-26 | 1986-09-26 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6355437U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101248476B1 (en) * | 2012-03-15 | 2013-04-02 | 주식회사루미지엔테크 | Apparatus for depositing thin layer |
-
1986
- 1986-09-26 JP JP14823386U patent/JPS6355437U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101248476B1 (en) * | 2012-03-15 | 2013-04-02 | 주식회사루미지엔테크 | Apparatus for depositing thin layer |