JPS6357385B2 - - Google Patents
Info
- Publication number
- JPS6357385B2 JPS6357385B2 JP60014058A JP1405885A JPS6357385B2 JP S6357385 B2 JPS6357385 B2 JP S6357385B2 JP 60014058 A JP60014058 A JP 60014058A JP 1405885 A JP1405885 A JP 1405885A JP S6357385 B2 JPS6357385 B2 JP S6357385B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- sintering
- transition metal
- carbon
- carbide powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 33
- 238000005245 sintering Methods 0.000 claims description 29
- 229910052799 carbon Inorganic materials 0.000 claims description 22
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 13
- 150000003623 transition metal compounds Chemical class 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 10
- 239000008240 homogeneous mixture Substances 0.000 claims description 10
- 150000002894 organic compounds Chemical class 0.000 claims description 9
- 150000001721 carbon Chemical class 0.000 claims description 8
- 229910052723 transition metal Inorganic materials 0.000 claims description 8
- 150000003624 transition metals Chemical group 0.000 claims description 7
- 230000001590 oxidative effect Effects 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 20
- 239000000843 powder Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 239000005011 phenolic resin Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229920001568 phenolic resin Polymers 0.000 description 4
- -1 FeSO 4 Chemical class 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- 229910010068 TiCl2 Inorganic materials 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009770 conventional sintering Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 1
- 239000007849 furan resin Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- GBMDVOWEEQVZKZ-UHFFFAOYSA-N methanol;hydrate Chemical compound O.OC GBMDVOWEEQVZKZ-UHFFFAOYSA-N 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- ZWYDDDAMNQQZHD-UHFFFAOYSA-L titanium(ii) chloride Chemical compound [Cl-].[Cl-].[Ti+2] ZWYDDDAMNQQZHD-UHFFFAOYSA-L 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Landscapes
- Ceramic Products (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は炭化けい素粉末の焼結法に関する。炭
化けい素焼結体は硬度と高温強度が大きいことか
ら耐摩耗，耐熱材料として広く利用されている。
炭化けい素焼結体は大別してα，βの結晶形のも
のがあるが、これらの焼結体を製造する炭化けい
素粉末の焼結法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for sintering silicon carbide powder. Sintered silicon carbide is widely used as a wear-resistant and heat-resistant material because of its high hardness and high-temperature strength.
Silicon carbide sintered bodies can be roughly divided into α and β crystal forms, and the present invention relates to a method of sintering silicon carbide powder to produce these sintered bodies.
従来技術
炭化けい素は共有結合性の高い化合物であり、
それ自体では非常に焼結しにくい。そのため、高
密度の焼結体を得るためには焼結助剤を必要とし
ている。Prior art Silicon carbide is a highly covalent compound,
By itself, it is very difficult to sinter. Therefore, a sintering aid is required to obtain a high-density sintered body.
従来、炭化けい素粉末の焼結助剤としては、硼
素，アルミニウムは炭化けい素粉末焼結体の緻密
化に有効に作用し、同時に焼結終期の粒成を促進
する作用を持つている。また炭素は炭化けい素粉
末中に含まれている不純物のSiO2を除去する作
用を持つているので、硼素またはアルミニウムを
含む化合物と炭素との併用されたものが主として
使用されており、硼素，アルミニウムを含まない
焼結助剤は極めて少ない。 Conventionally, as sintering aids for silicon carbide powder, boron and aluminum have an effective effect on densifying a sintered body of silicon carbide powder, and at the same time have the effect of promoting grain formation at the final stage of sintering. Furthermore, since carbon has the effect of removing SiO 2 , an impurity contained in silicon carbide powder, a combination of carbon and a compound containing boron or aluminum is mainly used. There are very few sintering aids that do not contain aluminum.
この硼素，アルミニウムを含まない例として、
酸化ベリリウムを使用する方法は知られている。
（特開昭55−85469号公報）
しかし、前記したように、炭化けい素は難焼結
性で焼結温度も高いことから、他のセラミツクス
に比べて焼結助剤としての元素も制限され新しい
焼結助剤の提供も困難であつた。 As an example that does not contain boron or aluminum,
Methods using beryllium oxide are known.
(Japanese Unexamined Patent Publication No. 55-85469) However, as mentioned above, silicon carbide is difficult to sinter and has a high sintering temperature, so the elements that can be used as sintering aids are also limited compared to other ceramics. It has also been difficult to provide new sintering aids.
発明の目的
本発明の目的は従来法の硼素，アルミニウムを
含まない炭化けい素粉末の焼結助剤を提供し、高
密度の焼結体を得んとするものである。OBJECTS OF THE INVENTION The object of the present invention is to provide a conventional sintering aid for silicon carbide powder that does not contain boron or aluminum, and to obtain a high-density sintered body.
発明の構成
本発明者らは前記目的を達成すべく、炭化けい
素粉末の焼結機構について詳細に検討した結果、
１ 炭化けい素粒子の粒界エネルギーは、炭素、
特に炭素の構造中の一部に他の元素を導入して
炭素構造を乱した炭素を粒子間に介在させると
低下し、単なる炭素に比べて焼結を促進し、粒
成長を抑制し得られ、高密度の焼結体が得られ
る。Structure of the Invention In order to achieve the above object, the present inventors conducted a detailed study on the sintering mechanism of silicon carbide powder, and found that 1. The grain boundary energy of silicon carbide particles is
In particular, when other elements are introduced into a part of the carbon structure to disturb the carbon structure and interpose the carbon between the particles, this decreases, promoting sintering and suppressing grain growth compared to simple carbon. , a high-density sintered body is obtained.
２ 遷移金属または遷移金属化合物の蒸気圧は、
炭化けい素の焼結温度である2000℃附近におい
て高くなるので、遷移金属化合物と有機化合物
との均一混合物、あるいは有機遷移金属化合物
の単独またはこれと有機化合物との均一混合物
とを加熱分解させると、生成した炭素の構造を
遷移金属化合物により容易に乱し得られる。2 The vapor pressure of the transition metal or transition metal compound is
The temperature increases near 2000℃, which is the sintering temperature of silicon carbide, so if a homogeneous mixture of a transition metal compound and an organic compound, or a single organic transition metal compound or a homogeneous mixture of this and an organic compound is thermally decomposed, , the structure of the produced carbon can be easily disturbed by a transition metal compound.
３ 炭化けい素に随伴するSiO2は前記炭素によ
り還元されて除去し得られる。3. SiO 2 accompanying silicon carbide can be reduced and removed by the carbon.
ことを究明し得た。この知見に基いて本発明を
完成した。 I was able to find out. The present invention was completed based on this knowledge.
本発明の要旨は、炭化けい素粉末を真空中また
は化学的に不活性な雰囲気中で焼結するに当り、
焼結助剤として遷移金属を少なくとも１種含む化
合物により変性された炭素を用いることを特徴と
する炭化けい素粉末の焼結法にある。 The gist of the present invention is that in sintering silicon carbide powder in vacuum or in a chemically inert atmosphere,
A method for sintering silicon carbide powder is characterized in that carbon modified with a compound containing at least one transition metal is used as a sintering aid.
本発明において用いる変性された炭素とは、炭
素の構造の一部に他の元素を導入し炭素構造を乱
した炭素を意味する。 The modified carbon used in the present invention refers to carbon whose carbon structure is disturbed by introducing other elements into a part of its structure.
遷移金属を少なくとも１種含む化合物により変
性された炭素は、１）遷移金属化合物例えばその
塩と有機化合物の均一混合物、２）有機遷移金属
化合物、３）有機遷移金属化合物と有機化合物と
の均一混合物を加熱分解することによつて得られ
る。 Carbon modified with a compound containing at least one transition metal is 1) a homogeneous mixture of a transition metal compound, such as a salt thereof, and an organic compound, 2) an organic transition metal compound, and 3) a homogeneous mixture of an organic transition metal compound and an organic compound. Obtained by thermal decomposition of
本発明に用いる炭化けい素粉末の結晶相はα型
でもβ型でもあるいは両者の混合相のものでもよ
い。その粒径は5μ以下のものが好ましい。 The crystalline phase of the silicon carbide powder used in the present invention may be α-type, β-type, or a mixed phase of both. The particle size is preferably 5μ or less.
本発明に用いる遷移金属としては、Ti，Ｖ，
Cr，Mn，Fe，Co，Cu，Niが挙げられ、その化
合物としては、水溶性もしくは有機溶媒に可溶な
化合物が好ましく、例えばFeSO4，7H2O，
CuSO4などの水溶性遷移金属塩，またNiCl2，
TiCl2などの有機溶媒に可溶な遷移金属化合物が
挙げられる。 The transition metals used in the present invention include Ti, V,
Examples include Cr, Mn, Fe, Co, Cu, and Ni, and the compounds are preferably water-soluble or organic solvent-soluble compounds, such as FeSO 4 , 7H 2 O,
water-soluble transition metal salts such as CuSO4 , and also NiCl2 ,
Examples include transition metal compounds that are soluble in organic solvents such as TiCl2 .
有機遷移金属化合物としては、例えばフエロセ
ン，ニツケロセンなどの有機金属錯体，あるいは
Ti（OCH（CH3）2）4金属アルコキシドが挙げられ、
有機基が大きく、分解による炭素生成量が多いも
のは単独使用が可能であるが、通常これと有機化
合物との均一混合物として用いる。 Examples of organic transition metal compounds include organometallic complexes such as ferrocene and nitschelosene, or
Ti(OCH(CH 3 ) 2 ) 4 metal alkoxides,
Those with large organic groups and a large amount of carbon produced by decomposition can be used alone, but they are usually used as a homogeneous mixture with an organic compound.
本発明に用いる有機化合物としては、残炭率の
高い化合物であることが好ましい。例えばフラン
樹脂，フエノール樹脂，ポリイミド系樹脂が挙げ
られる。しかしこれに限定されるものではない。 The organic compound used in the present invention is preferably a compound with a high residual carbon content. Examples include furan resin, phenol resin, and polyimide resin. However, it is not limited to this.
これらの焼結助剤原料を均一混合したものある
いは均一混合物を非酸化性雰囲気下300℃以上に
て処理したものを炭化けい素粉末と混合するか、
あるいは炭化けい素粉末と焼結助剤原料とを同時
に混合する。 A homogeneous mixture of these sintering aid raw materials or a homogeneous mixture treated at 300°C or higher in a non-oxidizing atmosphere is mixed with silicon carbide powder, or
Alternatively, the silicon carbide powder and the sintering aid raw material are mixed at the same time.
このように均一混合せず、各焼結助剤原料すな
わち炭素と遷移金属化合物とを別々にSiC粉末へ
添加した場合は炭素は変性されない。 If each sintering aid raw material, that is, carbon and transition metal compound, are added to the SiC powder separately without being uniformly mixed in this way, the carbon will not be modified.
得られた均一混合物を必要に応じ脱脂工程を経
て焼結する。 The obtained homogeneous mixture is sintered through a degreasing step if necessary.
焼結は真空中、または化学的に不活性な雰囲気
中、すなわち、非酸化性雰囲気中で、1850〜2300
℃，700Kg／cm2以下の加圧下で焼結する。 Sintering is carried out in vacuum or in a chemically inert atmosphere, i.e. in a non-oxidizing atmosphere, from 1850 to 2300
℃, sintered under pressure of 700Kg/cm2 or less .
この焼結により高密度の炭化けい素粉末の焼結
体が得られる。 Through this sintering, a high-density sintered body of silicon carbide powder is obtained.
実施例 １ 炭化けい素粉末として次のものを用いた。Example 1 The following silicon carbide powder was used.
真比重 3.19〜3.22ｇ／cm3
結晶形 立方晶（3C）
平均粒径 0.25〜0.28μm
不純物量 Al 0.03〜0.06％
Fe 0.03〜0.07％
SiO2 0.22〜0.33％
Ｃ 0.34〜0.47％
炭化けい素粉末３ｇと炭素源の有機化合物とし
てフエノール樹脂（残留炭素として２重量％にな
る量）をメタノールに溶解したものと混合した。
この混合液にNiCl2・6H2O 0.6ｇを溶解して24時
間混合した。True specific gravity 3.19-3.22g/cm 3 Crystal form Cubic (3C) Average particle size 0.25-0.28μm Impurity amount Al 0.03-0.06% Fe 0.03-0.07% SiO 2 0.22-0.33% C 0.34-0.47% Silicon carbide powder 3 g and a phenolic resin (an amount of 2% by weight as residual carbon) dissolved in methanol as an organic compound as a carbon source were mixed.
0.6 g of NiCl 2 .6H 2 O was dissolved in this mixed solution and mixed for 24 hours.
得られた混合液を真空乾燥器中で約100℃で24
時間保つて十分乾燥した後、アルゴンガス雰囲気
下で300〜500℃になるまで毎分３℃で昇温した。
この粉末を内径15mmの黒鉛ダイスに装填し、アル
ゴンガス雰囲気中で2200℃，200Kg／cm2の条件下
で30分間熱プレスした。得られた焼結体の密度は
3.10ｇ／cm3であつた。 The resulting mixture was dried in a vacuum dryer at approximately 100℃ for 24 hours.
After sufficiently drying for a certain period of time, the temperature was raised at a rate of 3°C per minute to 300 to 500°C under an argon gas atmosphere.
This powder was loaded into a graphite die with an inner diameter of 15 mm, and hot pressed for 30 minutes at 2200° C. and 200 kg/cm 2 in an argon gas atmosphere. The density of the obtained sintered body is
It was 3.10g/ cm3 .
比較例 １
実施例１と同じSiC粉末を用い、炭素源として
フエノール樹脂を残留炭素として２重量％になる
量をメタノールに溶解してSiC粉末に付着させ、
真空乾燥器で100℃で24時間保つて乾燥した。こ
の粉末をアルゴンガス雰囲気下で400〜500℃にな
るまで毎分３℃で昇温してSiO粉末の表面に炭素
を形成させた。この粉末３ｇとNiCl2・6H2Oと
を混合して実施例１と同様に焼結した。得られた
焼結体の密度は2.60ｇ／cm3であつた。Comparative Example 1 Using the same SiC powder as in Example 1, a phenolic resin as a carbon source was dissolved in methanol in an amount of 2% by weight as residual carbon, and the solution was attached to the SiC powder.
It was dried in a vacuum dryer at 100°C for 24 hours. This powder was heated at a rate of 3°C per minute to 400 to 500°C under an argon gas atmosphere to form carbon on the surface of the SiO powder. 3 g of this powder and NiCl 2 .6H 2 O were mixed and sintered in the same manner as in Example 1. The density of the obtained sintered body was 2.60 g/cm 3 .
実施例 ２
FeCl2・4H2O3ｇを水―メタノール溶液20c.c.に
溶解し、この溶液にフエノール樹脂15ｇ溶解し１
時間撹拌後、100℃に昇温し溶媒を除去すると共
にフエノール樹脂を硬化させた。得られたものと
アルゴンガス雰囲気中で、800℃で30分間加熱し
て炭化させた。これを粉砕して、実施例１で用い
たSiC粉末に対し、３重量％混合した後、実施例
１と同様に焼結した。得られた焼結体の密度は
3.08ｇ／cm3であつた。Example 2 Dissolve 3 g of FeCl 2 4H 2 O in 20 c.c. of water-methanol solution, dissolve 15 g of phenolic resin in this solution, and add 1
After stirring for an hour, the temperature was raised to 100°C to remove the solvent and cure the phenolic resin. The obtained material was carbonized by heating at 800° C. for 30 minutes in an argon gas atmosphere. This was pulverized and mixed with 3% by weight of the SiC powder used in Example 1, and then sintered in the same manner as in Example 1. The density of the obtained sintered body is
It was 3.08g/ cm3 .
比較例 ２
比較例１におけるNiCl2・6H2Oに代え、
FeCl3・4H2Oを用い、比較例と同様に焼結体を
作つた。得られた焼結体の密度は2.45ｇ／cm3であ
つた。Comparative Example 2 In place of NiCl 2 6H 2 O in Comparative Example 1,
A sintered body was made using FeCl 3 4H 2 O in the same manner as in the comparative example. The density of the obtained sintered body was 2.45 g/cm 3 .
実施例 ３
Ti（OCH（CH3）2）4液10ｇとフエノール樹脂10
ｇとを激しく撹拌して混合した後、加熱乾燥し
た。得られたものを実施例２と同様に炭化粉砕
し、これを実施例１で用いたSiC粉末に対し３重
量％混合した後、実施例１と同様な方法で焼結し
た。得られた焼結体の密度は3.09ｇ／cm3であつ
た。Example 3 Ti(OCH(CH 3 ) 2 ) 4 liquid 10g and phenol resin 10
After vigorously stirring and mixing with g, the mixture was heated and dried. The obtained product was carbonized and pulverized in the same manner as in Example 2, mixed with 3% by weight of the SiC powder used in Example 1, and then sintered in the same manner as in Example 1. The density of the obtained sintered body was 3.09 g/cm 3 .
発明の効果
本発明の方法によると、従来法における焼結助
剤と異なる新しい焼結助剤により、容易に高密度
の炭化けい素粉末の焼結体を製造し得られる優れ
た効果を有する。Effects of the Invention According to the method of the present invention, a new sintering aid different from the sintering aid used in the conventional method has the excellent effect of easily producing a high-density sintered body of silicon carbide powder.
Claims (1)
性な雰囲気中で焼結するに当り、焼結助剤として
遷移金属を少なくとも１種含む化合物により変性
された炭素を用いることを特徴とする炭化けい素
粉末の焼結法。 ２ 遷移金属を少なくとも１種含む化合物により
変性された炭素が、有機遷移金属化合物またはこ
れと有機化合物の均一混合物を加熱分解して得ら
れた変性された炭素である特許請求の範囲第１項
記載の炭化けい素粉末の焼結法。 ３ 遷移金属を少なくとも１種含む化合物により
変性された炭素が、有機化合物と遷移金属化合物
の少なくとも１種化合物の均一混合物を加熱分解
して得られた変性された炭素である特許請求の範
囲第１項記載の炭化けい素粉末の焼結法。 ４ 焼結法が非酸化雰囲気中で1850〜2300℃，
700Kg／cm2以下の加圧下で焼結する方法である特
許請求の範囲第１項記載の炭化けい素の焼結法。[Claims] 1. When silicon carbide powder is sintered in vacuum or in a chemically inert atmosphere, carbon modified with a compound containing at least one transition metal is used as a sintering aid. A method for sintering silicon carbide powder, which is characterized by: 2. Claim 1, wherein the carbon modified with a compound containing at least one transition metal is a modified carbon obtained by thermally decomposing an organic transition metal compound or a homogeneous mixture of this and an organic compound. sintering method of silicon carbide powder. 3. Claim 1, wherein the carbon modified with a compound containing at least one transition metal is a modified carbon obtained by thermally decomposing a homogeneous mixture of an organic compound and at least one transition metal compound. Method for sintering silicon carbide powder as described in Section 1. 4 The sintering method is performed at 1850-2300℃ in a non-oxidizing atmosphere.
The method of sintering silicon carbide according to claim 1, which is a method of sintering under a pressure of 700 kg/cm 2 or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60014058A JPS6212665A (en) | 1985-01-28 | 1985-01-28 | Method of sintering silicon carbide powder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60014058A JPS6212665A (en) | 1985-01-28 | 1985-01-28 | Method of sintering silicon carbide powder |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6212665A JPS6212665A (en) | 1987-01-21 |
| JPS6357385B2 true JPS6357385B2 (en) | 1988-11-11 |
Family
ID=11850485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60014058A Granted JPS6212665A (en) | 1985-01-28 | 1985-01-28 | Method of sintering silicon carbide powder |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6212665A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02145566U (en) * | 1989-05-16 | 1990-12-11 |
-
1985
- 1985-01-28 JP JP60014058A patent/JPS6212665A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02145566U (en) * | 1989-05-16 | 1990-12-11 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6212665A (en) | 1987-01-21 |
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