JPH0826848A - Method for producing porous SiC compact - Google Patents
Method for producing porous SiC compactInfo
- Publication number
- JPH0826848A JPH0826848A JP6191099A JP19109994A JPH0826848A JP H0826848 A JPH0826848 A JP H0826848A JP 6191099 A JP6191099 A JP 6191099A JP 19109994 A JP19109994 A JP 19109994A JP H0826848 A JPH0826848 A JP H0826848A
- Authority
- JP
- Japan
- Prior art keywords
- sic
- molded body
- porous
- polycarbosilane
- rice husk
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B38/00—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
- C04B38/06—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof by burning-out added substances by burning natural expanding materials or by sublimating or melting out added substances
- C04B38/063—Preparing or treating the raw materials individually or as batches
- C04B38/0635—Compounding ingredients
- C04B38/0645—Burnable, meltable, sublimable materials
- C04B38/067—Macromolecular compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Products (AREA)
Abstract
(57)【要約】
【目的】 安価な原料を用いて、ウイスカー性状と微粒
子性状のSiCが複合した組織からなる高気孔率で材質
強度に優れる多孔質SiC成形体の製造方を提供する。
【構成】 籾殻の炭化物を最大粒径が40μm0以下になる
ように粉砕処理する粉砕工程と、粉砕後の籾殻炭化物粉
末に炭化性熱硬化性樹脂の溶液を付着させる表面処理工
程と、表面処理後の籾殻炭化物粉末を所定形状に成形処
理する成形工程と、成形体を非酸化雰囲気下で1500〜18
00℃の温度域で加熱処理する反応工程と、反応工程後の
成形体を大気中で加熱処理して残留炭素成分を焼去する
焼却工程とを順次に施す。得られた多孔質SiC成形体
を、ポリカルボシランを含む溶液で処理したのち、前記
ポリカルボシランがSiC化する温度で焼成処理すると
材質強度が一層向上する。(57) [Summary] [Object] To provide a method for producing a porous SiC compact having a high porosity and an excellent material strength, which is composed of a composite of SiC having whisker and fine particle properties, using an inexpensive raw material. [Structure] A crushing process of crushing the charcoal of rice husks to a maximum particle size of 40 μm 0 or less, a surface treatment process of applying a solution of a carbonizing thermosetting resin to the crushed rice husk carbide powder, and a surface treatment Molding process of molding the rice husk carbide powder into a predetermined shape, and the molded body in a non-oxidizing atmosphere at 1500-18
A reaction step of heat-treating in the temperature range of 00 ° C. and an incineration step of heat-treating the molded body after the reaction step in the atmosphere to burn off residual carbon components are sequentially performed. The strength of the material is further improved by treating the obtained porous SiC molded body with a solution containing polycarbosilane and then firing the polycarbosilane at a temperature at which the polycarbosilane becomes SiC.
Description
【0001】[0001]
【産業上の利用分野】本発明は、実質的にウイスカー性
状と微粒子性状のSiCが複合した組織からなる高気孔
率で材質強度に優れる多孔質SiC成形体の製造方法に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a porous SiC compact having a high porosity and an excellent material strength, which is composed of a composite of substantially whisker and fine particle SiC.
【0002】[0002]
【従来の技術】多孔質SiC成形体の製造技術として
は、粒状の炭化珪素を結合材により所定形状に成形した
のち焼成処理する方法が古くから知られているが、この
方法では材質に制御された気孔率を付与することができ
ない。このため、粒径の異なるα型およびβ型の炭化珪
素粒子を混合焼結することにより気孔率を制御する方法
(特公平4−187578号公報) が提案されているが、この
場合にも高い気孔率を得ることは困難である。2. Description of the Related Art As a technique for manufacturing a porous SiC compact, there has been known for a long time a method in which granular silicon carbide is molded into a predetermined shape with a binder and then subjected to a firing treatment. Porosity cannot be imparted. For this reason, a method of controlling the porosity by mixing and sintering α-type and β-type silicon carbide particles having different particle sizes (Japanese Patent Publication No. 4-187578) has been proposed. Obtaining porosity is difficult.
【0003】高気孔率の多孔質SiC成形体を製造する
方法としては、三次元網目構造を備える有機質多孔発泡
体の骨格面にSiCのスラリーを付着したのち、乾燥、
焼成する方法がある。この方法で製造されるSiC成形
体は、気孔率が75〜95%にも及ぶ高度の多孔質構造
を呈するが、材質強度が極端に低下する欠点がある。本
方法の改良手段として、1回の操作により付着させるセ
ラミックススラリー量を少なくして、付着から乾燥まで
の工程を反復する方法(特開昭59−3059号公報) や、特
定された比率で圧縮された有機質発泡体にセラミックス
スラリーを充填したのち圧縮体を当初の体積に復元させ
て乾燥、焼成する方法(特開昭63−156084号公報) 等が
提案されている。ところが、これらの方法では焼成後に
骨格を形成している有機質成分が熱分解消失した後の空
孔がそのまま組織中に残留するため、組織強度の不足は
解消されない。As a method for producing a porous SiC compact having a high porosity, a slurry of SiC is adhered to the skeleton surface of an organic porous foam having a three-dimensional network structure and then dried,
There is a method of baking. The SiC molded body produced by this method exhibits a highly porous structure having a porosity of 75 to 95%, but has a drawback that the material strength is extremely lowered. As a means for improving this method, the amount of ceramics slurry deposited by one operation is reduced and the steps from deposition to drying are repeated (JP-A-59-3059), or compression at a specified ratio. A method has been proposed in which a ceramics slurry is filled in the formed organic foam, and then the compressed body is restored to its original volume and dried and fired (Japanese Patent Laid-Open No. 63-156084). However, in these methods, since the organic component forming the skeleton after firing is thermally decomposed and lost, the pores remain in the tissue as they are, so that the lack of the tissue strength cannot be solved.
【0004】このような問題点の解消を図り、目詰まり
のない均質通気孔と優れた骨格強度を備える多孔質セラ
ミックス構造体を得る方法として、有機質多孔発泡体に
セラミックススラリーを含浸し、余剰スラリーを除去し
たのち、乾燥、仮焼成する第1工程と、仮焼成体にセラ
ミックススラリーを再含浸し、余剰スラリーを除去した
のち、乾燥、焼成する第2工程からなるプロセスが本出
願人によって提案されている(特開平3−83875 号公
報) 。この方法によれば、有機成分の消失空孔に再含浸
によるSiCが充填されるため材質強度を効果的に向上
させることができるが、この含浸操作では組織内部の全
空孔にセラミックススラリーを円滑かつ均一に浸透させ
ることに困難性があり、往々にして局部的な目詰まりや
強度の偏りが生じる難点がある。As a method of solving the above problems and obtaining a porous ceramic structure having a uniform vent hole without clogging and an excellent skeletal strength, an organic porous foam is impregnated with a ceramic slurry to obtain a surplus slurry. The present applicant has proposed a process comprising a first step of removing and removing, and then drying and calcination, and a second step of re-impregnating the calcinated body with ceramics slurry and removing excess slurry, and then drying and calcination. (JP-A-3-83875). According to this method, the voids of the organic component are filled with SiC by re-impregnation, so that the material strength can be effectively improved. However, in this impregnation operation, all the pores inside the tissue are smoothed with the ceramic slurry. In addition, it is difficult to uniformly permeate, and there is a problem that local clogging and uneven strength are often generated.
【0005】一方、SiO2 成分を多く含む籾殻はSi
Cを製造する安価な原料系として注目されており、その
炭化物や灰化物を原料としてSiCウイスカーやSiC
成形体を得る技術が数多く提案されている。このうち、
SiC成形体の製造技術としては、例えば籾殻を鉄塩、
バナジウム塩、ニッケル塩またはクロム塩を含む水溶液
中に浸漬して乾燥したのち、400〜100℃の温度で
炭化して粉砕し、そのまま又は一旦空気中で酸化してか
ら、100〜400kg/cm2の圧力下で1800℃以上の
温度で焼結処理する方法(特開昭60−5072号公報) が提
案されている。この方法では安価な原料系を用いて実質
的にSiC組織からなる多孔質で強固な成形体が得られ
るとされているが、熱圧焼結により成形とSiC化の反
応を同時に行う関係で高気孔率の多孔質SiC成形体を
得ることができず、また焼結時の雰囲気が非酸化性では
なく、加熱温度を1800℃以上に設定するため生成す
るSiCが粗大粒となって組織強度の高い成形体が得ら
れ難い問題点がある。On the other hand, rice husk containing a large amount of SiO 2 component is made of Si.
It has attracted attention as an inexpensive raw material system for producing C, and its carbides and ash are used as raw materials for SiC whiskers and SiC.
Many techniques for obtaining a molded body have been proposed. this house,
Examples of the technology for producing a SiC molded body include, for example, rice husks made of iron salt,
After immersing in an aqueous solution containing vanadium salt, nickel salt or chromium salt and drying, it is carbonized and pulverized at a temperature of 400 to 100 ° C, and oxidized as it is or once in air, then 100 to 400 kg / cm 2 There is proposed a method (Japanese Patent Application Laid-Open No. 60-5072) in which a sintering treatment is performed at a temperature of 1800 ° C. or higher under the above pressure. According to this method, it is said that a porous and strong molded body substantially composed of a SiC structure can be obtained by using an inexpensive raw material system, but it is high because of the simultaneous reaction of molding and SiC formation by hot pressing. It was not possible to obtain a porous SiC compact with porosity, the atmosphere during sintering was not non-oxidizing, and the heating temperature was set to 1800 ° C. or higher, so the generated SiC became coarse grains, and There is a problem that it is difficult to obtain a high molded product.
【0006】[0006]
【発明が解決しようとする課題】近時、半導体分野に用
いる高温炉材(断熱材を含む)、構造材、濾過材等にお
いて、高純度で高度かつ制御された気孔率と材質強度に
優れる多孔性セラミックス構造体の開発が強く要望され
ているが、これらの要求を全て満足する製造技術はこれ
まで開発されていない。Recently, in high temperature furnace materials (including heat insulating materials), structural materials, filter materials, etc. used in the field of semiconductors, porous materials having high purity and high porosity and excellent material strength Although there is a strong demand for the development of a porous ceramic structure, a manufacturing technique satisfying all of these requirements has not been developed so far.
【0007】本発明者は、安価な籾殻原料系を用いて前
記の要求特性を満足する多孔質SiC成形体の製造技術
について鋭意研究を重ねた結果、所定の粒度以下に粉砕
した籾殻炭化物を炭化性熱硬化性樹脂で表面処理し、こ
れを成形したのち非酸化性雰囲気下で1500〜180
0℃の温度域で反応処理し、更に残留炭素分を焼去する
工程を順次に施すと、実質的にSiCウイスカーとSi
C微細粒子が複合した組織を有する高気孔率で材質強度
に優れ、複合材用プリフォームとしても有用な多孔質S
iC成形体が得られることを確認して本発明を開発する
に至った。The inventor of the present invention has conducted extensive studies on a manufacturing technique of a porous SiC compact which satisfies the above-mentioned required characteristics by using an inexpensive rice husk raw material system, and as a result, carbonizes the rice husk carbide crushed to a predetermined grain size or less. Surface treatment with a thermosetting thermosetting resin, and after molding this, it is 1500-180 in a non-oxidizing atmosphere.
When the reaction treatment is performed in the temperature range of 0 ° C. and the step of burning out the residual carbon content is sequentially performed, the SiC whiskers and the Si
C Porous S having a structure in which fine particles are compounded, has a high porosity, is excellent in material strength, and is useful as a preform for composite materials.
The present invention was developed after confirming that an iC molded body was obtained.
【0008】したがって、本発明の目的は、安価な原料
系を用いて実質的にウイスカー性状と微粒子性状のSi
Cが複合した組織からなる高気孔率で材質強度に優れる
多孔質SiC成形体の製造方法を提供することにある。Therefore, an object of the present invention is to use substantially inexpensive raw material system to obtain substantially whisker-like and fine-particle-like Si.
It is an object of the present invention to provide a method for producing a porous SiC compact having a high porosity and excellent material strength, which is composed of a composite structure of C.
【0009】[0009]
【課題を解決するための手段】上記の目的を達成するた
めの本発明による多孔質SiC成形体の製造方法は、籾
殻の炭化物を最大粒径が40μm 以下になるように粉砕
処理する粉砕工程と、粉砕後の籾殻炭化物粉末に炭化性
熱硬化性樹脂の溶液を付着させる表面処理工程と、表面
処理後の籾殻炭化物粉末を所定形状に成形処理する成形
工程と、成形体を非酸化性雰囲気下で1500〜180
0℃の温度域で加熱処理する反応工程と、反応工程後の
成形体を大気中で加熱処理して残留炭素成分を焼去する
焼却工程とを順次に施すことを構成上の特徴とする。Means for Solving the Problems In order to achieve the above object, a method for producing a porous SiC compact according to the present invention comprises a crushing step of crushing a charcoal of rice husks to a maximum particle size of 40 μm or less. A surface treatment step of adhering a solution of a carbonizing thermosetting resin to the crushed chaff carbide powder, a molding step of shaping the chaff carbide powder after surface treatment into a predetermined shape, and a molded body under a non-oxidizing atmosphere. At 1500-180
A structural feature is that a reaction step of heat-treating in a temperature range of 0 ° C. and an incineration step of heat-treating a molded body after the reaction step in the atmosphere to burn off residual carbon components are sequentially performed.
【0010】(1) 粉砕工程;本発明は、出発原料として
農業廃棄物の対象とされている安価な籾殻の炭化物を選
択使用する。籾殻の炭化物は、籾殻を空気を遮断した状
態あるいは不活性ガス雰囲気に保持された加熱炉中で5
00〜1000℃、好ましくは700〜800℃の温度
域で加熱処理することによって生成することができる。
この籾殻炭化物は、例えばボールミルのような粉砕装置
により最大粒径が40μm 以下のなるような微細粉末に
粉砕処理する。粉砕した籾殻炭化物粉末の最大粒度が4
0μmを越えると得られるSiC成形体の組織中に粗大
SiC粒子が多く混在するようになり、組織が不均質と
なるうえ材質強度が低下する。なお、粉砕処理後の籾殻
炭化物粉末には、必要に応じてFe、Ni、Coなどの
触媒成分を付着させることができる。触媒成分の付着操
作は、前記金属の水溶性化合物を溶解した溶液に籾殻炭
化物粉末を浸漬するか、籾殻炭化物粉末の表面に溶液を
噴霧したのち、乾燥する方法で行われる。(1) Grinding process: The present invention selectively uses, as a starting material, inexpensive rice husk charcoal which is targeted for agricultural waste. Carbide of rice husks can be removed by heating the rice husks in a furnace with the air shielded or in an inert gas atmosphere.
It can be produced by heat treatment in a temperature range of 00 to 1000 ° C, preferably 700 to 800 ° C.
The chaff carbide is pulverized by a pulverizing device such as a ball mill into a fine powder having a maximum particle size of 40 μm or less. The maximum particle size of crushed chaff carbide powder is 4
When it exceeds 0 μm, a large amount of coarse SiC particles are mixed in the structure of the obtained SiC molded body, the structure becomes inhomogeneous, and the material strength decreases. A catalyst component such as Fe, Ni, or Co may be attached to the chaff carbide powder after the crushing treatment, if necessary. The operation of depositing the catalyst component is carried out by immersing the rice husk carbide powder in a solution in which the water-soluble compound of the metal is dissolved, or by spraying the solution on the surface of the rice husk carbide powder and then drying.
【0011】(2) 表面処理工程;粉砕処理後の籾殻炭化
物粉末は、炭化性熱硬化性樹脂により表面処理する。表
面処理する炭化性熱硬化性樹脂としては、フェノール系
樹脂またはフラン系樹脂が好適に用いられ、エタノール
のような有機溶媒に溶解した溶液状態で使用される。表
面処理の操作は、籾殻炭化物粉末を炭化性熱硬化性樹脂
の溶液に浸漬して十分に撹拌分散させ、濾過等により余
剰の溶液を除去したのち乾燥する方法で行われる。(2) Surface treatment step: The rice husk carbide powder after the pulverization treatment is subjected to a surface treatment with a carbonizing thermosetting resin. As the carbonizing thermosetting resin to be surface-treated, a phenol resin or a furan resin is preferably used, and is used in a solution state dissolved in an organic solvent such as ethanol. The surface treatment is carried out by a method in which the rice husk carbide powder is immersed in a carbonizing thermosetting resin solution, sufficiently stirred and dispersed, and excess solution is removed by filtration or the like, followed by drying.
【0012】(3) 成形工程;表面処理後の籾殻炭化物粉
末は、所定の形状に成形する。成形処理は、籾殻炭化物
粉末をモールド中に充填し、常温下に100〜400kg
/cm2の圧力を付加して圧縮成形する方法で行われる。こ
の際、付加圧力を変動させることにより成形体の組織密
度を調整することが可能となるが、圧力が100kg/cm2
未満では最終的に得られる多孔質SiC成形体の材質強
度が不十分となり、400kg/cm2を越えると最終的に得
られる多孔質SiC成形体に高気孔率を付与することが
できなくなる。(3) Molding step: The rice husk carbide powder after the surface treatment is molded into a predetermined shape. Molding is performed by filling chaff charcoal powder into a mold, and at room temperature 100-400 kg.
It is carried out by a method of compression molding by applying a pressure of / cm 2 . At this time, it is possible to adjust the tissue density of the molded body by changing the applied pressure, but the pressure is 100 kg / cm 2
If it is less than 400, the material strength of the finally obtained porous SiC compact will be insufficient, and if it exceeds 400 kg / cm 2 , it will be impossible to impart high porosity to the finally obtained porous SiC compact.
【0013】(4) 反応工程;ついで、成形体を非酸化性
雰囲気下で加熱処理して、成形体組織をSiCに転化さ
せる。加熱処理の条件は、N2 あるいはAr雰囲気に保
持した加熱炉に成形体をセットし、温度を1500〜1
800℃の範囲、好ましくは1550〜1700℃の設
定して行われる。加熱段階で成形体を構成する籾殻炭化
物中の組成成分であるSiO2 とCおよび熱硬化性樹脂
が炭化して生じたC成分が反応して、一部は針状単結晶
のSiCウイスカーとして、また一部はSiC微粒子と
して生成し、巨視的に微細繊維状のSiCウイスカーが
無方向に絡みながら強固に形成された空隙骨格内にSi
C微粒子が結合固定された組織形態を呈する。しかし、
加熱温度が1500℃未満ではSiCが反応生成せず、
1800℃を上回るとSiCウイスカーの生成度合が減
退し、その代わりにSiC粗大粒が多く生成して材質強
度の低下および組織の不均質化を招く。(4) Reaction step: Next, the molded body is heat-treated in a non-oxidizing atmosphere to convert the structure of the molded body into SiC. The heat treatment conditions are as follows: the molded body is set in a heating furnace kept in an N 2 or Ar atmosphere and the temperature is set to 1500 to 1
The temperature is set in the range of 800 ° C, preferably 1550 to 1700 ° C. In the heating stage, SiO 2 which is a compositional component in the chaff carbide constituting the molded body reacts with C and the C component generated by carbonization of the thermosetting resin, and a part thereof becomes a needle-shaped single crystal SiC whisker, In addition, a part is generated as SiC fine particles, and Si is contained in the void skeleton that is macroscopically finely entwined with the SiC whiskers and entwined in a non-directional manner.
It has a tissue morphology in which C microparticles are bonded and fixed. But,
If the heating temperature is less than 1500 ° C, SiC does not react and generate,
If the temperature exceeds 1800 ° C, the degree of formation of SiC whiskers is reduced, and instead, a large amount of coarse SiC particles are formed, resulting in a decrease in material strength and an inhomogeneous structure.
【0014】(5) 焼却工程;反応工程後の成形体中には
未反応の炭素成分が残留しているため、これを焼却除去
する。この焼去処理は、成形体を大気中で600〜80
0℃の温度域で加熱処理する操作で行われる。600℃
未満の温度では残留炭素成分が円滑に焼去されず、80
0℃を越える温度になるとSiCが酸化されてSiO2
に転化する度合が多くなるため好ましくない。(5) Incineration step: Since unreacted carbon component remains in the molded body after the reaction step, it is removed by incineration. This burn-off treatment is performed by molding the molded body in the atmosphere at 600-80.
The heat treatment is performed in the temperature range of 0 ° C. 600 ° C
If the temperature is less than 80%, the residual carbon component will not be burned off smoothly.
When the temperature exceeds 0 ° C, SiC is oxidized and SiO 2
It is not preferable because the degree of conversion to
【0015】以上の粉砕工程、表面処理工程、成形工
程、反応工程および焼却工程を順次に施すことにより、
目的とする高度の気孔率ならびに材質強度を兼備する多
孔質SiC成形が製造される。By sequentially carrying out the above-mentioned crushing step, surface treatment step, molding step, reaction step and incineration step,
A porous SiC molding having a desired high porosity and material strength is manufactured.
【0016】より材質強度に優れる多孔質SiC成形体
を製造するためには、上記の工程を経て得られた多孔質
SiC成形体を、ポリカルボシランを含む溶液で処理し
たのち、前記ポリカルボシランがSiC化する温度で焼
成処理する方法を付加する。具体的な処理手段は、ポリ
カルボシランを例えばベンゼン、トルエン、キシレン、
エーテル、アルコール等の適宜な有機溶媒に溶解し、こ
の溶液中に上記工程で得られた多孔質SiC成形体を浸
漬し、乾燥したのち、アルゴン、窒素などの不活性雰囲
気下で1500〜1800℃の加熱温度で焼成する方法
が採られる。上記の工程で製造される多孔質炭化珪素体
は、気孔径0.5〜10μm の連続気孔が均質に分布し
た気孔率75〜85%範囲の調整された多孔組織を有
し、材質強度は曲げ強度として100kg/cm2以上の物理
的特性を有する実質的に炭化珪素単体からなる高純度品
である。In order to produce a porous SiC compact having a higher material strength, the porous SiC compact obtained through the above steps is treated with a solution containing polycarbosilane, and then the polycarbosilane is added. A method of performing a firing treatment at a temperature at which is converted to SiC is added. Specific treatment means, polycarbosilane, for example, benzene, toluene, xylene,
It is dissolved in an appropriate organic solvent such as ether or alcohol, and the porous SiC molded body obtained in the above step is immersed in this solution and dried, and then 1500 to 1800 ° C. under an inert atmosphere such as argon or nitrogen. The method of baking at the heating temperature of is adopted. The porous silicon carbide body produced in the above process has a regulated porous structure having a porosity of 75 to 85% in which continuous pores having a pore diameter of 0.5 to 10 μm are uniformly distributed, and the material strength is bent. It is a high-purity product consisting essentially of silicon carbide having a physical property of 100 kg / cm 2 or more in strength.
【0017】[0017]
【作用】本発明のプロセスによれば、安価な籾殻炭化物
を出発原料とし、まず粉砕工程の粒度調整により粗大S
iC粒子の生成を抑制し、表面処理工程において籾殻炭
化物粉末の結合性を高めることにより、次の成形工程で
の賦形の容易化と成形組織の強化ならびに均一化を図
る。引き続く反応工程では、成形体を形成している籾殻
炭化物中のSiO2 成分と炭素成分が反応して、針状単
結晶のSiCウイスカーとSiC微粒子が複合的に生成
し、巨視的に微細繊維状のSiCウイスカーが無方向に
絡み合った骨格内部にSiC微粒子が結合固定された組
織形態が形成される。この組織形態は、最終的に残留炭
素成分を焼去する焼却工程を経て無数の微小空隙が形成
され、実用的な材質強度を維持した状態で高気孔率が付
与される。According to the process of the present invention, inexpensive rice husk carbide is used as a starting material, and coarse S is obtained by adjusting the particle size in the crushing step.
By suppressing the generation of iC particles and increasing the bondability of the rice husks carbide powder in the surface treatment step, the shaping in the next molding step is facilitated and the molding structure is strengthened and made uniform. In the subsequent reaction step, the SiO 2 component and the carbon component in the rice husk carbide forming the compact react with each other to form acicular single crystal SiC whiskers and SiC fine particles in a macroscopically fine fibrous state. An SiC morphology in which SiC fine particles are bonded and fixed is formed inside the skeleton in which the SiC whiskers are entangled in a non-directional manner. This structure morphology has a high porosity while maintaining practical material strength by forming innumerable minute voids through an incineration step of finally burning out residual carbon components.
【0018】更に、上記の多孔質SiC成形体をポリカ
ルボシラン溶液で処理したのちSiC化する後処理を施
すと、組織骨格が新たに生成したSiCにより被覆され
て強化され、材質強度が一層増大する。このため、得ら
れる多孔質SiC成形体は、気孔径0.5〜10μm の
連続気孔が均質に分布した気孔率50%を越える多孔組
織を有し、同時に材質強度に優れた実質的に炭化珪素単
体からなる高純度品である。Furthermore, when the above-mentioned porous SiC compact is treated with a polycarbosilane solution and then post-treated to be SiC, the tissue skeleton is covered with the newly generated SiC and reinforced, and the material strength is further increased. To do. Therefore, the obtained porous SiC molded body has a porous structure in which continuous pores having a pore diameter of 0.5 to 10 μm are uniformly distributed and which has a porosity of more than 50%, and at the same time, is substantially silicon carbide excellent in material strength. It is a high-purity product consisting of a single substance.
【0019】[0019]
【実施例】以下、本発明の実施例を比較例と対比しなが
ら詳細に説明する。EXAMPLES Examples of the present invention will be described in detail below in comparison with comparative examples.
【0020】実施例1〜4、比較例1〜2 籾殻を黒鉛容器に充填して蓋をし、N2 ガス雰囲気に保
持された加熱炉に入れて800℃で1時間炭化処理し
た。該籾殻炭化物をボールミルにより約24時間粉砕処
理したのち、分級して最大粒径38μm の微粉末を得た
(粉砕工程)。粉砕後の籾殻炭化物粉末を、フェノール
樹脂50重量部をエタノール50重量部に溶解した溶液
に浸漬して十分に撹拌分散させたのち、濾過して余剰の
溶液を除去し、10時間真空乾燥して籾殻炭化物粉末の
表面にフェノール樹脂を付着した(表面処理工程)。こ
のようにして表面処理した籾殻炭化物粉末をモールドに
充填し、常温下で400kg/cm2の圧力を付加して成形し
た(成形工程)。ついで、成形体をN2 ガス雰囲気に保
持された高周波誘導加熱炉にセットし、3℃/min の昇
温速度により所定の温度まで上昇し、90分間加熱処理
して反応させた(反応工程)。反応工程後の成形体を、
大気中で600℃の温度で12時間焼却処理して残留炭
素分を焼去した(焼却工程)。Examples 1 to 4 and Comparative Examples 1 to 2 Rice husks were filled in a graphite container, covered with a lid, placed in a heating furnace kept in an N 2 gas atmosphere, and carbonized at 800 ° C. for 1 hour. The rice husk carbide was crushed by a ball mill for about 24 hours and then classified to obtain a fine powder having a maximum particle size of 38 μm (crushing step). The crushed rice husk charcoal powder is immersed in a solution of 50 parts by weight of a phenolic resin in 50 parts by weight of ethanol to be sufficiently stirred and dispersed, and then filtered to remove an excess solution, and vacuum dried for 10 hours. Phenolic resin was adhered to the surface of the rice husk carbide powder (surface treatment step). The rice husk carbide powder surface-treated in this manner was filled in a mold and molded at a normal temperature by applying a pressure of 400 kg / cm 2 (molding step). Next, the molded body was set in a high-frequency induction heating furnace maintained in an N 2 gas atmosphere, heated to a predetermined temperature at a temperature rising rate of 3 ° C./min, and heat-treated for 90 minutes to react (reaction step). . The molded body after the reaction step,
The residual carbon content was burned off by incineration at a temperature of 600 ° C. for 12 hours in the air (incineration step).
【0021】上記の工程で製造された多孔質SiC成形
体の組成性状、気孔率および圧縮強度を測定し、変動生
成条件と対比させて表1に示した。なお、表1におい
て、粗大粒子は粒径5μm 以上の粒子であり、また圧縮
強度は、直径30mm、高さ30mmの円盤状試片を用いた
際の圧縮歪み10%時の強度値として示した。The compositional properties, porosity and compressive strength of the porous SiC compacts produced in the above steps were measured and shown in Table 1 in comparison with the varying generation conditions. In Table 1, the coarse particles are particles having a particle size of 5 μm or more, and the compression strength is shown as a strength value at a compression strain of 10% when a disk-shaped sample having a diameter of 30 mm and a height of 30 mm is used. .
【0022】比較例3〜4 粉砕工程で最大粒径が75μm になる粒度の籾殻炭化物
粉末を得たほかは、全て実施例2(反応温度1600℃) お
よび4 (反応温度1800℃) と同一の条件により多孔質S
iC成形体を製造した。得られた多孔質SiC成形体の
組成性状、気孔率および圧縮強度を測定し、変動生成条
件と対比させて表1に併載した。Comparative Examples 3 to 4 All were the same as those in Examples 2 (reaction temperature 1600 ° C.) and 4 (reaction temperature 1800 ° C.) except that a husk carbide powder having a particle size of 75 μm was obtained in the crushing step. Porous S depending on conditions
An iC molded body was manufactured. The compositional properties, porosity, and compressive strength of the obtained porous SiC compact were measured, and are listed in Table 1 in comparison with the fluctuation generation conditions.
【0023】実施例5〜7 成形工程の成形圧を、100kg/cm2、200kg/cm2、3
00kg/cm2に変え、その他の条件は実施例3と同一にし
て多孔質SiC成形体を製造した。得られた多孔質Si
C成形体の組成性状、気孔率および圧縮強度を測定し、
変動生成条件と対比させて表1に併載した。Examples 5 to 7 The molding pressure in the molding process was 100 kg / cm 2 , 200 kg / cm 2 , 3
A porous SiC compact was manufactured under the same conditions as in Example 3 except that the amount was changed to 00 kg / cm 2 . Obtained porous Si
The compositional properties, porosity and compressive strength of the C molded body were measured,
It is also listed in Table 1 in comparison with the fluctuation generation conditions.
【0024】[0024]
【表1】 [Table 1]
【0025】表1の結果から、実施例による多孔質Si
C成形体はいずれも50%を越える高気孔率と4.5kg
/cm2以上の圧縮強度を示し、実施例5〜7に見られるよ
うに成形圧力を制御することにより気孔率を調整するこ
とができる。これに対し、反応温度が1450℃の比較
例1ではSiCが生成せず、反応温度が1900℃の比
較例2ではSiCウイスカーの生成率が相対的に少ない
ため材質強度が著しく減退する。また、粉砕時の籾殻炭
化物粉末に40μm を越える最大粒径のものが含まれる
比較例3、4ではSiC粗大粒子が多く生成して材質強
度が低下し、組織も不均質であることが認められた。From the results shown in Table 1, the porous Si according to the example is
All C molded products have a high porosity of over 50% and 4.5 kg
It exhibits a compressive strength of / cm 2 or more, and the porosity can be adjusted by controlling the molding pressure as seen in Examples 5 to 7. On the other hand, in Comparative Example 1 in which the reaction temperature is 1450 ° C., SiC is not generated, and in Comparative Example 2 in which the reaction temperature is 1900 ° C., the production rate of SiC whiskers is relatively small, so that the material strength is significantly reduced. Further, in Comparative Examples 3 and 4 in which the rice husk carbide powder at the time of crushing contained the maximum particle size exceeding 40 μm, a large amount of coarse SiC particles were formed, the material strength was lowered, and the structure was found to be heterogeneous. It was
【0026】実施例8 実施例3で製造された多孔質SiC成形体を、ポリカル
ボシラン〔信越化学工業(株)製、数平均分子量:1475
、重量平均分子量:3365 〕のキシレン溶液(濃度20wt
%)に浸漬処理し、室温で風乾したのち真空乾燥を施し
た。乾燥した成形体を窒素ガスで保持された加熱炉に入
れ、1700℃で5時間焼成処理をおこなった。得られ
た焼成体は、気孔率が67%と若干減少したが、圧縮強
度は7.3kg/cm2に向上したSiC単体の多孔質体であ
った。Example 8 The porous SiC compact produced in Example 3 was treated with polycarbosilane (manufactured by Shin-Etsu Chemical Co., Ltd., number average molecular weight: 1475).
, Weight average molecular weight: 3365] xylene solution (concentration 20 wt
%), Air dried at room temperature, and then vacuum dried. The dried compact was placed in a heating furnace maintained with nitrogen gas and subjected to a firing treatment at 1700 ° C. for 5 hours. The obtained fired body was a porous body of simple substance of SiC whose porosity was slightly reduced to 67% but whose compressive strength was improved to 7.3 kg / cm 2 .
【0027】[0027]
【発明の効果】以上のとおり、本発明によれば高度の気
孔率ならびに材質強度を備える高純度の多孔質SiC成
形体を効率よく製造することが可能となる。したがっ
て、半導体向けの部材や苛酷な条件下で使用される断熱
材、濾過材、パーティキュレート捕集材などのほか、S
iCウイスカーを多く含む複合組成を呈するから金属や
樹脂マトリックスを溶浸するための複合材用プリフォー
ムとして有用性が期待される。As described above, according to the present invention, it becomes possible to efficiently manufacture a high-purity porous SiC compact having a high porosity and material strength. Therefore, in addition to semiconductor materials, heat insulation materials used under severe conditions, filtration materials, particulate collection materials, etc., S
Since it has a composite composition containing a large amount of iC whiskers, it is expected to be useful as a preform for a composite material for infiltrating a metal or resin matrix.
Claims (2)
になるように粉砕処理する粉砕工程と、粉砕後の籾殻炭
化物粉末に炭化性熱硬化性樹脂の溶液を付着させる表面
処理工程と、表面処理後の籾殻炭化物粉末を所定形状に
成形処理する成形工程と、成形体を非酸化性雰囲気下で
1500〜1800℃の温度域で加熱処理する反応工程
と、反応工程後の成形体を大気中で加熱処理して残留炭
素成分を焼去する焼却工程とを順次に施すことを特徴と
する多孔質SiC成形体の製造方法。1. A crushing step of crushing a charcoal of rice husks to a maximum particle size of 40 μm or less, a surface treatment step of applying a solution of a carbonizing thermosetting resin to the crushed rice husk carbide powder, and a surface A molding step of molding the treated rice husk carbide powder into a predetermined shape, a reaction step of heat-treating the molded body in a temperature range of 1500 to 1800 ° C. in a non-oxidizing atmosphere, and a molded body after the reaction step in the atmosphere. A method for producing a porous SiC compact, which comprises sequentially performing an incineration step in which the residual carbon component is burned off by performing a heat treatment with.
形体を、ポリカルボシランを含む溶液で処理したのち、
前記ポリカルボシランがSiC化する温度で焼成処理す
ることを特徴とする多孔質SiC成形体の製造方法。2. A porous SiC molded body obtained according to claim 1 is treated with a solution containing polycarbosilane,
A method for producing a porous SiC compact, which is characterized by performing a baking treatment at a temperature at which the polycarbosilane becomes SiC.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6191099A JPH0826848A (en) | 1994-07-21 | 1994-07-21 | Method for producing porous SiC compact |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6191099A JPH0826848A (en) | 1994-07-21 | 1994-07-21 | Method for producing porous SiC compact |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0826848A true JPH0826848A (en) | 1996-01-30 |
Family
ID=16268844
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6191099A Pending JPH0826848A (en) | 1994-07-21 | 1994-07-21 | Method for producing porous SiC compact |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0826848A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001510729A (en) * | 1997-07-25 | 2001-08-07 | ペシネイ ルシェルシュ | Silicon carbide foam with large specific surface area and improved mechanical properties |
| JP2006151704A (en) * | 2004-11-25 | 2006-06-15 | Ngk Insulators Ltd | Silicon carbide based porous material and method for producing the same |
| JP2016160154A (en) * | 2015-03-04 | 2016-09-05 | 勝義 近藤 | Method for producing fine silica powder |
| CN106316447A (en) * | 2016-07-28 | 2017-01-11 | 马琰珂 | Rice-husk-based porous silicon carbide ceramic material and preparing method thereof |
| US9862612B2 (en) | 2012-06-20 | 2018-01-09 | Sumitomo Electric Industries, Ltd. | Method for producing silicon metal and porous carbon |
-
1994
- 1994-07-21 JP JP6191099A patent/JPH0826848A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001510729A (en) * | 1997-07-25 | 2001-08-07 | ペシネイ ルシェルシュ | Silicon carbide foam with large specific surface area and improved mechanical properties |
| JP2006151704A (en) * | 2004-11-25 | 2006-06-15 | Ngk Insulators Ltd | Silicon carbide based porous material and method for producing the same |
| US9862612B2 (en) | 2012-06-20 | 2018-01-09 | Sumitomo Electric Industries, Ltd. | Method for producing silicon metal and porous carbon |
| JP2016160154A (en) * | 2015-03-04 | 2016-09-05 | 勝義 近藤 | Method for producing fine silica powder |
| CN106316447A (en) * | 2016-07-28 | 2017-01-11 | 马琰珂 | Rice-husk-based porous silicon carbide ceramic material and preparing method thereof |
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