JPS6359537B2 - - Google Patents

Info

Publication number
JPS6359537B2
JPS6359537B2 JP56043800A JP4380081A JPS6359537B2 JP S6359537 B2 JPS6359537 B2 JP S6359537B2 JP 56043800 A JP56043800 A JP 56043800A JP 4380081 A JP4380081 A JP 4380081A JP S6359537 B2 JPS6359537 B2 JP S6359537B2
Authority
JP
Japan
Prior art keywords
groove
film
substrate
type
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56043800A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57159038A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP56043800A priority Critical patent/JPS57159038A/ja
Publication of JPS57159038A publication Critical patent/JPS57159038A/ja
Publication of JPS6359537B2 publication Critical patent/JPS6359537B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01Manufacture or treatment
    • H10W10/041Manufacture or treatment of isolation regions comprising polycrystalline semiconductor materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/40Isolation regions comprising polycrystalline semiconductor materials

Landscapes

  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
JP56043800A 1981-03-25 1981-03-25 Forming method for v-shaped isolation region Granted JPS57159038A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56043800A JPS57159038A (en) 1981-03-25 1981-03-25 Forming method for v-shaped isolation region

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56043800A JPS57159038A (en) 1981-03-25 1981-03-25 Forming method for v-shaped isolation region

Publications (2)

Publication Number Publication Date
JPS57159038A JPS57159038A (en) 1982-10-01
JPS6359537B2 true JPS6359537B2 (fr) 1988-11-21

Family

ID=12673816

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56043800A Granted JPS57159038A (en) 1981-03-25 1981-03-25 Forming method for v-shaped isolation region

Country Status (1)

Country Link
JP (1) JPS57159038A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0718661U (ja) * 1993-09-17 1995-04-04 株式会社タイガークラウン 商品陳列具
CN109461767A (zh) * 2018-10-25 2019-03-12 深圳市金鑫城纸品有限公司 一种超结结构及其制作方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS609138A (ja) * 1983-02-25 1985-01-18 Fujitsu Ltd 半導体装置の製造方法
US5342792A (en) * 1986-03-07 1994-08-30 Canon Kabushiki Kaisha Method of manufacturing semiconductor memory element
US6960818B1 (en) * 1997-12-30 2005-11-01 Siemens Aktiengesellschaft Recessed shallow trench isolation structure nitride liner and method for making same
CN101873266B (zh) 2004-08-30 2015-11-25 高通股份有限公司 用于语音ip传输的自适应去抖动缓冲器

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0718661U (ja) * 1993-09-17 1995-04-04 株式会社タイガークラウン 商品陳列具
CN109461767A (zh) * 2018-10-25 2019-03-12 深圳市金鑫城纸品有限公司 一种超结结构及其制作方法
CN109461767B (zh) * 2018-10-25 2022-03-29 深圳市金鑫城纸品有限公司 一种超结结构的制作方法

Also Published As

Publication number Publication date
JPS57159038A (en) 1982-10-01

Similar Documents

Publication Publication Date Title
JP3584125B2 (ja) 半導体装置のアラインメントキーパターンの形成方法
JPH03245553A (ja) 素子分離領域の形成方法
JP3581505B2 (ja) 半導体装置の素子分離領域の形成方法
JPS6359537B2 (fr)
JP2000036536A (ja) 半導体素子の素子隔離構造及びその隔離方法
JPH02119238A (ja) 半導体装置およびその製造方法
KR940009579B1 (ko) 반도체장치의 제조방법
KR100225955B1 (ko) 반도체 소자의 소자분리막 형성방법
JPH0413854B2 (fr)
JPH033346A (ja) 半導体装置の製造方法
KR940001812B1 (ko) 반도체장치의 소자분리방법
JPH0258778B2 (fr)
KR100439107B1 (ko) 반도체소자의 소자분리막 형성방법
KR0180782B1 (ko) 반도체 소자의 소자 분리막 제조방법
JPH0210729A (ja) フィールド絶縁膜の形成方法
JPH03153031A (ja) 半導体装置の製造方法
JPS6262464B2 (fr)
KR0166835B1 (ko) 반도체 소자 격리형성 방법
KR100303438B1 (ko) 반도체장치의소자분리방법
KR19990000764A (ko) 반도체장치의 소자격리방법
JP2597424B2 (ja) 半導体装置の製造方法
JPS59177941A (ja) 素子分離領域の製造方法
KR20000013286A (ko) 반도체 장치의 소자분리막 제조방법
JPH0442558A (ja) 半導体装置
KR0167260B1 (ko) 반도체 소자의 격리구조 제조방법