JPS636151B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device, and particularly to an apparatus for manufacturing a semiconductor device in which a cylindrical glass case and a composite wire for taking out external leads are fused and sealed with a heat-resistant and resistive substrate. .

Conventionally, as a device using this type of technology, there is, for example, a mini-type glass-sealed diode. That is, one side of a cylindrical glass tube is already fused with a bead-wound diamond wire, and a semiconductor element (diode element) is attached to the diamond wire inside the glass tube via a piece of solder, and then the other side is fused. Bead-wrapped diamond wire for taking out the external lead (hereinafter referred to as the probe lead)
and one side of the glass case are fused and hermetically sealed.

This hermetic sealing method involves creating multiple holes in a heat-resistant substrate used as a heater (hereinafter referred to as a heater), arranging probe leads in the holes, and covering the probe leads with a glass tube. In this method, the glass cases are arranged in a state in which the probe leads are heated, and a large current is passed through the heater, and the heat generated heats and fuses the glass cases and the probe lead. In addition, in the glass case, only the fused part of the glass tube is inserted into the machined hole of the heater, and the other non-fused part of the glass case is made of the same heat-resistant material as the heater to keep the glass case fixed. It is inserted into a machined hole in a resistive substrate (hereinafter referred to as a glass guide). The glass guide has an appropriate gap from the heater and is electrically insulated from the heater.

This sealing method has the disadvantage that the heat generated by the heater is transmitted through the glass guide plate and radiated. Moreover, the heat dissipation is large at the center of the heater and small at the periphery, resulting in an inconvenience that the temperature distribution lacks uniformity. For this reason, when a large number of glass cases and probe leads are fused and sealed within one heater, the fusion properties vary between the center and the outer periphery of the heater, which is a problem in terms of quality and yield. There were flaws.

An object of the present invention is to eliminate these drawbacks and provide a fusion sealing device that can be manufactured simultaneously in large quantities with high yield.

That is, the present invention heats and fuses the glass case and the composite wire while blowing an appropriate amount of gas such as nitrogen gas around the heater, which has a plurality of machined holes, in order to make the temperature distribution uniform. This is what I did.

Next, one embodiment of the present invention will be described in detail with reference to the drawings.

FIG. 1a is a side view of a mini-type glass-sealed diode encapsulating method showing an embodiment of the present invention after the product is set up in a encapsulation device. A glass case 2 and a probe lead 3, one of which is already sealed with a composite wire 1, are set in a heater 4. The glass case 2 is inserted into the respective machined holes of the heater 4 on the side to be fused and the glass guide 5 on the other side. The glass guide 5 is installed on the upper surface of the heater 4 via an insulating spacer 6 with an appropriate gap. In this state, it is set on the electrode 7 of the sealing device, and a large current is passed through the heater through the heater electrode 8 to thermally fuse the glass case 2 and the probe lead 3. At this time, in order to solve the temperature variations due to heat dissipation within the heater and the dispersion of fusion, an appropriate amount of nitrogen gas is sprayed from the nozzle 9 to the area with little heat dissipation, that is, the area around the heater to balance the heat inside the heater. improve.

FIG. 1b is a cross-sectional view taken along line A-A' in FIG. 1a, viewed from above. Nitrogen gas is blown from a nozzle 9 toward the four corners of the product around the glass case 2 arranged on the heater 4 to be fused and sealed, as shown by the arrow.

As described above, according to the present invention, by spraying an appropriate amount of nitrogen gas to a high temperature part of the heater, that is, a part with little heat radiation, the temperature of that part is lowered to be equal to that of a low temperature part, that is, a part with high heat radiation. It is possible to maintain a uniform temperature distribution within the same heater. As a result, the variation in fusion can be reduced, making it possible to fusion and seal a large amount at the same time within the same heater.
This has a great effect on cost reduction.

It goes without saying that an inert gas other than nitrogen gas may be used. Of course, it is not limited to glass-sealed diodes.

[Brief explanation of the drawing]

FIG. 1a is a side view showing one embodiment of the present invention, and FIG. 1b is a cross-sectional top view taken along line A-A' in FIG.
... Probe lead, 4 ... Heater, 5 ... Glass guide, 6 ... Insulating spacer, 7 ... Electrode of sealing device, 8 ... Heater electrode, 9 ... Nozzle.

Claims (1)

[Claims] 1. A heater substrate provided with a plurality of first processed holes, a glass guide provided on the heater substrate via an insulating spacer, and a heater substrate provided with a plurality of first processed holes on the glass guide opposite to the first processed holes. one end of the semiconductor container is inserted into the second processed hole of the glass guide, and the semiconductor container is inserted into the first processed hole of the heater substrate. In the manufacturing apparatus, the other end of the semiconductor container and the external lead wire are arranged, and the other end of the semiconductor container and the external lead wire are heated and fused by passing a current through the heater substrate and heat generated by the heater substrate. 1. An apparatus for manufacturing a semiconductor device, characterized in that a gas outlet is provided around a peripheral part of a substrate, and the semiconductor container and the external lead wire are heated and fused while blowing gas.